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At least 1,135 records · Page 63
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NASA NTRS1982

Einstein detection of X-rays from the Alpha Centauri system

Detection of quiescent X-ray emission from the stellar components of the Alpha Cen system: Alpha Cen A (G2 V) and Alpha Cen B (K1 V) is reported. Contrary to previous theoretical expectations, both stars are found to be X-ray emitters and at about the same level: L sub x = 1.2 x 10 to the 27th and 2.8 x 10 to the 27th ergs/s for A and B, respectively; the sum of these values is in agreement with the emission level previously reported for Alpha Cen by Nugent and Garmire (1978). Comparison with previous chromospheric and transition region measurements suggests that Alpha Cen A and B may have changed in relative strength in recent years. The coronal temperature of the combined Cen AB source, which is dominated (approximately 2/3 of the total) by the K star is (2.1 + or - 0.4) x 10 to the 6th K, similar to that of the average solar corona; it is noted that this value is not consistent with the estimate of 5 x 10 to the 5th K quoted by Nugent and Garmire.

Golub, L.↗
NASA NTRS1982

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.

Bar-Chaim, N.↗
NASA NTRS1982

An unbiased survey of field star X-ray emission

To determine the X-ray luminosity function of normal stars, 1700 stars brighter than 10th magnitude were surveyed by the imaging proportional counter aboard the Einstein Observatory. Seventy star positions were found to contain excess X-ray counting rates. The number of stars per square degree in a number of magnitude intervals was calculated as a function of spectral type and luminosity class, and the total number of stars for each spectral type brighter than magnitude 9.5 derived in this manner was compared with the 1700-star sample. The agreement is good, as is that between the surface density of soft X-ray sources and the number of stellar emitters predicted from the field star survey. It is concluded that stars probably do not contribute significantly to the diffuse soft X-ray background. The findings are consistent with the notion that stellar age and/or rotation velocity are important determinants of stellar X-ray emission level.

Helfand, D. J.↗
NASA NTRS1982

International ultraviolet explorer observations of Hyades stars

A description is presented of International Ultraviolet Explorer (IUE) satellite observations of transition region and chromospheric emission from a group of Hyades dwarfs which are strong X-ray emitters as seen in a survey conducted by Stern et al. (1981). Short-wavelength spectra (1175-2000 A) and long-wavelength spectra (1900-3200 A) have been obtained. Although the IUE sensitivity limit did not make it possible to detect emission lines in three stars, the presence of chromospheres and transition regions could be confirmed in BD +15 deg 640, 70 Tau, BD +14 deg 693, and BD +16 deg 592. The differential emission measure has been plotted as a function of temperature for the four considered stars.

Zolcinski, M.-C. S.↗
NASA NTRS1982

10830 A He I observations of 455 stars

A comparison with K line, X-ray and other data, of 10830 A equivalent widths (EW) measurements in 890 image tube spectra of 455 stars shows that for the case of G stars, the EW correlates well with K line intensity. Good correlation is also found between 10830 A EW and soft X-ray fluxes, confirming the excitation of the line by coronal soft X-rays, which can serve as a measure of coronal emission. It is also found that, in contradiction to published models, 10830 A is weak or absent in O, B and A stars, and is absent in F and M supergiants. Moderate to high 10830 A EW is frequent in F and M dwarfs, G and K supergiants, and class K3 III. The 58 stars whose 10830 A EW was found to be of 300 A or more should be relatively intense X-ray emitters. Almost all RS CVn stars show strong 10830 A absorption, and T Tauri stars show both absorption and emission.

Zirin, H.↗
NASA NTRS1981

Advances in high output voltage silicon solar cells

Solar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.

Arndt, R. A.↗
NASA NTRS1981

Large area, low cost space solar cells with optional wraparound contacts

Design parameters for two large area, low cost solar cells are presented, and electron irradiation testing, thermal alpha testing, and cell processing are discussed. The devices are a 2 ohm-cm base resistivity silicon cell with an evaporated aluminum reflector produced in a dielectric wraparound cell, and a 10 ohm-cm silicon cell with the BSF/BSR combination and a conventional contact system. Both cells are 5.9 x 5.9 cm and require 200 micron thick silicon material due to mission weight constraints. Normalized values for open circuit voltage, short circuit current, and maximum power calculations derived from electron radiation testing are given. In addition, thermal alpha testing values of absorptivity and emittance are included. A pilot cell processing run produced cells averaging 14.4% efficiencies at AMO 28 C. Manufacturing for such cells will be on a mechanized process line, and the area of coverslide application technology must be considered in order to achieve cost effective production.

Michaels, D.↗
NASA NTRS1982

Thickness dependences of solar cell performance

The significance of including factors such as the base resistivity loss for solar cells thicker than 100 microns and emitter and BSF layer recombination for thin cells in predicting the fill factor and efficiency of solar cells is demonstrated analytically. A model for a solar cell is devised with the inclusion of the dopant impurity concentration profile, variation of the electron and hole mobility with dopant concentration, the concentration and thermal capture and emission rates of the recombination center, device temperature, the AM1 spectra and the Si absorption coefficient. Device equations were solved by means of the transmission line technique. The analytical results were compared with those of low-level theory for cell performance. Significant differences in predictions of the fill factor resulted, and inaccuracies in the low-level approximations are discussed.

Sah, C. T.↗
NASA NTRS1983

High Power Switching Transistor

Improved switching transistors handle 400-A peak currents and up to 1,200 V. Using large diameter silicon wafers with twice effective area as D60T, form basis for D7 family of power switching transistors. Package includes npn wafer, emitter preform, and base-contact insert. Applications are: 25to 50-kilowatt high-frequency dc/dc inverters, VSCF converters, and motor controllers for electrical vehicles.

Hower, P. L.↗
NASA NTRS1984

Conductive Plasma-Sprayed Coatings

Normal emittance of oxidized titanium foil used as plume shields at high temperature significantly increased by plasma coating with specific ceramic materials.

Hribar, V. F.↗
NASA NTRS1982

Parallel plate radiofrequency ion thruster

An 8-cm-diam. argon ion thruster is described. It is operated by applying 100 to 160 Mhz rf power across a thin plasma volume in a strongly divergent static magnetic field. No cathode or electron emitter is required to sustain a continuous wave plasma discharge over a broad range of propellant gas flow. Preliminary results indicate that a large fraction of the incident power is being reflected by impedance mismatching in the coupling structure. Resonance effects due to plasma thickness, magnetic field strength, and distribution are presented. Typical discharge losses obtained to date are 500 to 600 W per beam ampere at extracted beam currents up to 60 mA.

Nakanishi, S.↗
NASA NTRS1982

Progress toward cascade cells made by OM-VPE

Organometallic Vapor Phase Epitaxy (COM-VPE) was used to make a sophisticated monolithic cascade cell, with a peak AMO efficiency of 16.6%, not corrected for 14% grid coverage. The cell has 9 epitaxial layers. The top cell is 1.35 microns thick with a 0.1 micron thich emitter. Both cells are heteroface n-p structures. The cascade cell uses metal interconnects. Details of growth and processing are described.

Borden, P. G.↗
NASA NTRS1982

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗
NASA NTRS1982

High temperature silicon carbide impregnated insulating fabrics

High temperature insulating articles having improved performance characteristics are described. The articles comprise fabrics of closely woven refractory or heat resistant fibers having particles of silicon carbide dispersed at least partially through the fabric and bonded to the fibers with an emulsifiable polyethylene wax. Such articles exhibit significantly increased high temperature emittance characteristics and an improved retention of integrity and flexibility after prolonged exposure to high temperature.

Schomburg, C.↗
NASA NTRS1982

Development program on a Spindt cold-cathode electron gun

A thin film field emission cathode (TFFEC) array and a cold cathode electron gun based on the emitter were developed. A microwave tube gun that uses the thin film field emission cathode as an electron source is produced. State-of-the-art cathodes were fabricated and tested. The tip-packing density of the arrays were increased thereby increasing the cathode's current density capability. The TFFEC is based on the well known field emission effect and was conceived to exploit the advantages of that phenomenon while minimizing the difficulties associated with conventional field emission structures, e.g. limited life and high voltage requirements. Field emission follows the Fowler-Nordheim equation.

Spindt, C. A.↗
NASA NTRS1983

Active lamp pulse driver circuit

A flashlamp drive circuit is described which uses an unsaturated transistor as a current mode switch to periodically subject a partially ionized gaseous laser excitation flashlamp to a stable, rectangular pulse of current from an incomplete discharge of an energy storage capacitor. A monostable multivibrator sets the pulse interval, initiating the pulse in response to a flash command by providing a reference voltage to a non-inverting terminal of a base drive amplifier; a tap on an emitter resistor provides a feedback signal sensitive to the current amplitude to an inverting terminal of amplifier, thereby controlling the pulse amplitude. The circuit drives the flashlamp to provide a squarewave current flashlamp discharge.

Logan, K. E.↗
NASA NTRS1983

Variable anodic thermal control coating

A process for providing a thermal control solar stable surface coating for aluminum surfaces adapted to be exposed to solar radiation wherein selected values within the range of 0.10 to 0.72 thermal emittance (epsilon sub tau) and 0.2 to 0.4 solar absorptance (alpha subs) are reproducibly obtained by anodizing the surface area in a chromic acid solution for a selected period of time. The rate voltage and time, along with the parameters of initial epsilon sub tau and alpha subs, temperature of the chromic acid solution, acid concentration of the solution and the material anodized determines the final values of epsilon/tau sub and alpha sub S. 9 Claims, 5 Drawing Figures.

Gilliland, C. S.↗
NASA NTRS1983

Study of relationships of material properties and high efficiency solar cell performance on material composition

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

Sah, C. T.↗