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At least 1,135 records · Page 63

Cosmological fluids with logarithmic equation of state

We investigate the cosmological applications of fluids having an equation of state which is the analog to the one related to the isotropic deformation of crystalline solids, that is containing logarithmic terms of the energy density, allowing additionally for a bulk viscosity. We consider two classes of scenarios and we show that they are both capable of triggering the transition from deceleration to acceleration at late times. Furthermore, we confront the scenarios with data from Supernovae type Ia (SN Ia) and Hubble function observations, showing that the agreement is excellent. Moreover, we perform a dynamical system analysis and we show that there exist asymptotic accelerating attractors, arisen from the logarithmic terms as well as from the viscosity, which in most cases correspond to a phantom late-time evolution. Finally, for some parameter regions we obtain a nearly de Sitter late-time attractor, which is a significant capability of the scenario since the dark energy, although dynamical, stabilizes at the cosmological constant value.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of p–d hybridization, structural distortion and cation electronegativity on electronic properties of ZnSnX{sub 2} (X=P, As, Sb) chalcopyrite semiconductors

Significant effects of p–d hybridization, structural distortion and cation-electro-negativity are found on band gap in ZnSnX{sub 2} (X=P, As, Sb). Our study suggests these compounds to be direct band gap semiconductors with band gaps of 1.23, 0.68 and 0.19 eV respectively. Lattice constants, tetragonal distortion (η), anion displacement, bond lengths and bulk moduli are calculated by Density Functional Theory based on Tight binding Linear Muffin-Tin orbital method. Our result of structural properties is in good agreement with the available experimental and other theoretical results. Calculated band gaps also agree well with the experimental works within LDA limitation. Unlike other semiconductors in the group II–IV–V{sub 2}, there is a reduction in the band gap of 0.22, 0.20 and 0.24 eV respectively in ZnSnX{sub 2} (X=P, As, Sb) due to p–d hybridization. Structural distortion decreases band gap by 0.20, 0.12 and 0.10 eV respectively. We find that cation electronegativity effect is responsible for increasing the band gap relative to their binary analogs GaInP{sub 2}, InGaAs{sub 2} and GaInSb{sub 2} respectively and increment are 0.13, 0.04 and 0.13 eV respectively. - Graphical abstract: One unit cell of ZnSnX{sub 2} (X=P, As, Sb) chalcopyrite semiconductor. Semiconductors ZnSnX{sub 2} (X=P, As, Sb) are found to be direct band gap semiconductors with band gaps 1.23, 0.68 and 0.19 eV respectively. The quantitative estimate of effects of p–d hybridization, structural distortion and cation electronegativity shows band gaps change significantly due to these effects. Highlights: ► ZnSnX{sub 2} (X=P, As, Sb) are direct band gap semiconductors. ► These have band gaps of 1.23 eV, 0.68 eV and 0.19 eV respectively. ► The band gap reduction due to p–d hybridization is 13.41%, 18.51% and 40% respectively. ► Band gap reduction due to structural distortion is 12.12%, 11.11% and 16.66% respectively. ► Band gap increases 8.38%, 3.70% and 21.31% respectively due to cation electronegativity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Acoustic velocities, elasticity, and pressure-induced elastic softening in compressed neodymium

For the first time, the acoustic velocities and elasticity of double hexagonal close-packed neodymium (Nd) were measured at high pressure using ultrasonic interferometry in conjunction with synchrotron X-ray techniques. Here, both the compressional and shear wave velocities increased with an increase in pressure of up to ~5.4 GPa before they exhibited almost constant values upon further compression. This pressure-induced elastic wave velocity softening can be attributed to the structural instability in dhcp-Nd. From the current sound velocities and density data, we obtained new bulk and shear moduli as well as their pressure dependence for polycrystalline dhcp-Nd, yielding $B_0$=33.2(9) GPa, $G_0$=14.1(5) GPa, $\partial$$B/$$\partial$$P$ = 3.6 (4) and $\partial$$=G/$$\partial$$P$ = 1.3 (2) while other elasticity-related/mechanical properties, including Young's modulus, Debye temperature, Poisson's ratio, and Grüneisen parameter, which are important parameters for the application of Nd in extreme environments, were also derived.

36 MATERIALS SCIENCE↗

Bootstrap current modeling in M3D-C1

Bootstrap current plays a crucial role in the equilibrium of magnetically confined plasmas, particularly in quasi-symmetric stellarators and in tokamaks, where it can represent bulk of the electric current density. Accurate modeling of this current is essential for understanding the magnetohydrodynamic (MHD) equilibrium and stability of these configurations. This study expands the modeling capabilities of M3D-C1, an extended-MHD code, by implementing self-consistent physics models for bootstrap current. It employs two analytical frameworks: a generalized Sauter model (Sauter et al. 1999 Phys. Plasmas vol. 6, no. 7, pp. 2834–2839), and a revised Sauter-like model (Redl et al. 2021 Phys. Plasmas vol. 28, no. 2, pp. 022502). The isomorphism described by Landreman et al. (2022 Phys. Rev. Lett. vol. 128, pp. 035001) is employed to apply these models to quasi-symmetric stellarators. The implementation in M3D-C1 is benchmarked against neoclassical codes, including NEO, XGCa and SFINCS, showing excellent agreement. These improvements allow M3D-C1 to self-consistently calculate the neoclassical contributions to plasma current in axisymmetric and quasi-symmetric configurations, providing a more accurate representation of the plasma behavior in these configurations. A workflow for evaluating the neoclassical transport using SFINCS with arbitrary toroidal equilibria calculated using M3D-C1 is also presented. This workflow enables a quantitative evaluation of the error in the Sauter-like model in cases that deviate from axi- or quasi-symmetry (e.g. through the development of an MHD instability).

fusion plasma↗

Electric Field Effects on Water and Ion Structure and Diffusion at the Orthoclase (001)–Water Interface

Understanding the electrochemical properties of mineral–water interfaces tends to rely upon electrical double layer (EDL) models, but these models are based on the assumption that electrostatic equilibrium is constantly maintained. In reality, interfacial reactions, ion diffusion, and their electrochemical signatures are based in nonequilibrium conditions of locally or globally imbalanced electrical fields where current EDL models have limited purview. In this work, we performed molecular dynamics (MD) simulations of the orthoclase (001) surface in contact with a 1 M NaCl aqueous solution under various electric fields, to explore the interplay between EDL structure and dynamics when perturbed by electric fields of different direction and strength, by confinement, and by different distributions of structural surface charge. The simulations showed that confinement between two opposing (001) surfaces led to the development of an induced field when the applied field was perpendicular to the surfaces and, as a result, to ionic diffusion coefficients that were independent of electric field strength. In contrast, when the applied field was parallel to the surfaces, confinement resulted in ionic diffusion coefficients that were more strongly dependent on the magnitude of the electric field than in bulk water. Differences in the density and distribution of aluminol groups on the two surfaces had a significant impact on how the interfacial structure and dynamics varied in the presence of an electric field. Notably, these differences resulted in an electro-osmotic flow with opposite directions at the two surfaces under parallel applied electric field. Overall, the MD simulations highlighted the importance of considering atomic-level structure and heterogeneities when developing models of the electrochemical properties of mineral–water interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Theoretical Study of High Harmonic Generation in Monolayer NbSe 2

High harmonic generation (HHG) is a powerful probe of electron dynamics on attosecond to femtosecond time scales and has been successfully used to detect electronic and structural changes in solid-state quantum materials, including transition-metal dichalcogenides (TMDs). Among TMDs, bulk NbSe 2 exhibits charge density wave (CDW) order below 33 K and becomes superconducting below 7.3 K. Monolayer NbSe 2 also has superconducting and CDW behavior and is therefore interesting as a material whose different structural and electronic properties could be probed via HHG. Here, we predict the HHG response of the pristine 2H and CDW phases of monolayer NbSe 2 using real-time time-dependent density functional theory under the application of a simulated laser pulse excitation. We find that due to the lack of inversion symmetry in both monolayer phases, it is possible to excite even harmonics and that the even harmonics appear as the transverse components of the current response under excitations polarized along the zigzag direction of the monolayer, while odd harmonics arise from the longitudinal current response in all excitation directions. This suggests that the even and odd harmonic responses can be controlled via the polarization of the probing field, opening an avenue for potentially useful applications in optoelectronic devices.

36 MATERIALS SCIENCE↗

Cluster-Inspired Design of High-Capacity Anode for Li-Ion Batteries

One of the greatest challenges in next-generation Li-ion batteries (LIB) is to develop high charge capacity anodes with long cycle life. Inspired by the experimental observation of a magic Ti13C22 cluster and its layer-by-layer growth, we have constructed one-dimensional nanowires using Ti9C13 clusters as well as those based on planar-tetracoordinate carbon-containing (ptC) Ti8C12 metcar and TiC clusters with bulk cubic crystal structure. Using density functional theory and molecular dynamics we studied their energetic and thermal stability as well as their potential for LIB anode. The Ti9C13 nanowire is found to be stable up to 2500 K and has a charge capacity five times larger than that of the graphite anode being used today. Furthermore, unlike silicon nanotube anode materials, the Ti9C13 nanowire does not suffer from volume expansion/contraction during lithiation/delithiation processes.

Zhao, Tianshan↗

Towards atom-level understanding of metal oxide catalysts for the oxygen evolution reaction with machine learning

Abstract Green hydrogen production is crucial for a sustainable future, but current catalysts for the oxygen evolution reaction (OER) suffer from slow kinetics, despite many efforts to produce optimal designs, particularly through the calculation of descriptors for activity. In this study, we develop a dataset of density functional theory calculations of bulk and surface perovskite oxides, and adsorption energies of OER intermediates, which includes compositions up to quaternary and facets up to (555). We demonstrate that per-site properties of perovskite oxides such as Bader charge or band center can be tuned through element substitution and faceting, and develop a machine learning model that accurately predicts these properties directly from the local chemical environment. We leverage these per-site properties to identify promising perovskites with high theoretical OER activity. The identified design principles and promising materials provide a roadmap for closing the gap between current artificial catalysts and biological enzymes such as photosystem II.

Chemistry↗

Enhanced thermoelectric performance in Cu-intercalated BiTeI by compensation weakening induced mobility improvement

The low weighted carrier mobility has long been considered to be the key challenge for improvement of thermoelectric (TE) performance in BiTeI. The Rashba-effect-induced two-dimensional density of states in this bulk semiconductor is beneficial for thermopower enhancement, which makes it a prospective compound for TE applications. In this report, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect reactions, selectively mediate the donor-acceptor compensation, and tune the defect concentration in the carrier conductive network. Consequently, the potential fluctuations responsible for electron scattering are reduced and the carrier mobility in BiTeI can be enhanced by a factor of two to three between 10 K and 300 K. The carrier concentration can also be optimized by tuning the Te/I composition ratio, leading to higher thermopower in this Rashba system. Cu-intercalation in BiTeI gives rise to higher power factor, slightly lower lattice thermal conductivity, and consequently improved figure of merit. Compared with pristine BiTe 0.98 I 1.02 , the TE performance in Cu 0.05 BiTeI reveals a 150% and 20% enhancement at 300 and 520 K, respectively. Ultimately, these results demonstrate that defect equilibria mediated by selective doping in complex TE and energy materials could be an effective approach to carrier mobility and performance optimization.

36 MATERIALS SCIENCE↗

Diameter dependent thermoelectric properties of individual SnTe nanowires

The lead-free compound tin telluride (SnTe) has recently been suggested to be a promising thermoelectric material. In this work, we report on the first thermoelectric study of individual single-crystalline SnTe nanowires with different diameters ranging from ~ 218 to ~ 913 nm. Measurements of thermopower S, electrical conductivity σ and thermal conductivity κ were carried out on the same nanowires over a temperature range of 25 - 300 K. While the electrical conductivity does not show a strong diameter dependence, the thermopower increases by a factor of two when the nanowire diameter is decreased from ~ 913 nm to ~ 218 nm. The thermal conductivity of the measured NWs is lower than that of the bulk SnTe, which may arise from the enhanced phonon - surface boundary scattering and phonon-defect scattering. Lastly, temperature dependent figure of merit ZT was determined for individual nanowires and the achieved maximum value at room temperature is about three times higher than that in bulk samples of comparable carrier density.

36 MATERIALS SCIENCE↗

Combined ultrasonic elastic wave velocity and microtomography measurements at high pressures

Combined ultrasonic and microtomographic measurements were conducted for simultaneous determination of elastic property and density of noncrystalline materials at high pressures. A Paris-Edinburgh anvil cell was placed in a rotation apparatus, which enabled us to take a series of x-ray radiography images under pressure over a 180{sup o} angle range and construct accurately the three-dimensional sample volume using microtomography. In addition, ultrasonic elastic wave velocity measurements were carried out simultaneously using the pulse reflection method with a 10{sup o} Y-cut LiNbO{sub 3} transducer attached to the end of the lower anvil. Combined ultrasonic and microtomographic measurements were carried out for SiO{sub 2} glass up to 2.6 GPa and room temperature. A decrease in elastic wave velocities of the SiO{sub 2} glass was observed with increasing pressure, in agreement with previous studies. The simultaneous measurements on elastic wave velocities and density allowed us to derive bulk (K{sub s}) and shear (G) moduli as a function of pressure. K{sub s} and G of the SiO{sub 2} glass also decreased with increasing pressure. The negative pressure dependence of K{sub s} is stronger than that of G, and as a result the value of K{sub s} became similar to G at 2.0-2.6 GPa. There is no reason why we cannot apply this new technique to high temperatures as well. Hence the results demonstrate that the combined ultrasonic and microtomography technique is a powerful tool to derive advanced (accurate) P-V-Ks-G-(T) equations of state for noncrystalline materials.

47 OTHER INSTRUMENTATION↗

Energy relaxation of hot electrons in Si-doped GaN

Energy relaxation of the hot electrons in Si-doped bulk GaN is studied theoretically, taking into account non-equilibrium polar optical phonons, electron degeneracy, and screening from the mobile electrons. The electron power dissipation and energy relaxation time are calculated as functions of the electron temperature T{sub e}, the hot-phonon effect (HPE) is examined by varying the optical phonon lifetime values, and the results are compared with previous calculations for typical GaN-based heterostructures. Particular attention is paid to the distinct temperature T{sub e} dependences of the power loss and the energy relaxation time τ{sub E} at the low and high electron temperatures. At low electron temperatures (T{sub e}<500 K), the exponential rise of phonon generation number, fast weakened screening and HPE result in a rapid increase of power loss and sharp drop of relaxation time with T{sub e}. At high electron temperatures (T{sub e}>1500 K), the power loss increases slowly with T{sub e} due to the decrease in phonon generation rate, and the temperature-dependence of the energy relaxation time depends on the polar optical phonon lifetime—saturation in energy relaxation occurs when the phonon lifetime increases or varies little with T{sub e}. Our calculated temperature dependences of the energy relaxation time are in good agreement with experimental findings [Liberis et al., Appl. Phys. Lett. 89, 202117 (2006); Matulionis et al., Phys. Status Solidi C 2, 2585 (2005)]. With no HPE, the electron energy relaxation is much faster in bulk GaN (τ{sub E}∼ several tens femtoseconds) than in the GaN-based heterostructures. However, stronger hot-phonon re-absorption occurs in bulk GaN due to rapid polar-optical phonon emission compared to phonon decay. Therefore, including HPE yields very close power loss and energy relaxation times in bulk and heterostructures with similar densities of electrons (τ{sub E}∼ several tenths of a picosecond). Transparent expressions for energy relaxation are obtained in the Boltzmann approximation, which are very useful for resolving the temperature dependences of the energy relaxation in the low- and high-T{sub e} regions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin decoherence in n-type GaAs: The effectiveness of the third-body rejection method for electron-electron scattering

We study the spin decoherence in n-type bulk GaAs for moderate electronic densities at room temperature using the Ensemble Monte Carlo method. We demonstrate that a technique called “third-body rejection method” devised by B. K. Ridley, J. Phys. C: Solid State Phys. 10, 1589 (1977) can be successfully adapted to Ensemble Monte Carlo method and used to tackle the problem of the electron-electron contribution to spin decoherence in the parameter region under study, where the electron-electron interaction can be reasonably described by a Yukawa potential. This scattering technique is employed in a doping region where one can expect that multiple collisions may play a role in carrier dynamics. By this technique, we are able to calculate spin relaxation times which are in very good agreement with the experimental results found by Oertel et al., Appl. Phys. Lett. 93, 13 (2008). Through this method, we show that the electron-electron scattering is overestimated in Born approximation, in agreement with previous results obtained by C. A. Kukkonen and H. Smith, Phys. Rev. B 8, 4601 (1973).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The atomic structure of low-index surfaces of the intermetallic compound InPd

The intermetallic compound InPd (CsCl type of crystal structure with a broad compositional range) is considered as a candidate catalyst for the steam reforming of methanol. Single crystals of this phase have been grown to study the structure of its three low-index surfaces under ultra-high vacuum conditions, using low energy electron diffraction (LEED), X-ray photoemission spectroscopy (XPS), and scanning tunneling microscopy (STM). During surface preparation, preferential sputtering leads to a depletion of In within the top few layers for all three surfaces. The near-surface regions remain slightly Pd-rich until annealing to ∼580 K. A transition occurs between 580 and 660 K where In segregates towards the surface and the near-surface regions become slightly In-rich above ∼660 K. This transition is accompanied by a sharpening of LEED patterns and formation of flat step-terrace morphology, as observed by STM. Several superstructures have been identified for the different surfaces associated with this process. Annealing to higher temperatures (≥750 K) leads to faceting via thermal etching as shown for the (110) surface, with a bulk In composition close to the In-rich limit of the existence domain of the cubic phase. The Pd-rich InPd(111) is found to be consistent with a Pd-terminated bulk truncation model as shown by dynamical LEED analysis while, after annealing at higher temperature, the In-rich InPd(111) is consistent with an In-terminated bulk truncation, in agreement with density functional theory (DFT) calculations of the relative surface energies. More complex surface structures are observed for the (100) surface. Additionally, individual grains of a polycrystalline sample are characterized by micro-spot XPS and LEED as well as low-energy electron microscopy. Results from both individual grains and “global” measurements are interpreted based on comparison to our single crystals findings, DFT calculations and previous literature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increase of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High-yield and high-angular-fluence neutron generation from deuterons accelerated by laser-driven collisionless shock

Since a bright collimated neutron source is an essential tool for global security missions and fundamental scientific research. In this paper, we study a compact high-yield and high-angular-fluence neutron source particularly suitable for high-energy neutron applications utilizing the breakup reaction of laser-driven deuterons in a 9 Be converter. The neutron generation scaling from such a reaction is used to guide the choice and optimization of the acceleration process for bulk ions in a low density CD 2 foam. In particular, the collisionless shock acceleration mechanism is exploited with proper choice in the laser and target parameter space to accelerate these ions toward energies above the temperature of the distribution. Particle-in-cell and Monte Carlo simulations are coupled here to investigate this concept and possible adverse effects as well as the contribution from the surface ions accelerated and the optimal converter design. The simulation results indicated that our design can be a practical approach to increase both the neutron yield and angular fluence of laser-driven neutron sources, reaching >10 11 neutron/pulse (or >10 8 neutron/J) and >10 11 neutron/sr (or >10 8 neutron/sr/J) with present-day kJ-class high-power lasers. Such developments will advance fundamental neutron science, high precision radiography, and other global security applications with laser-driven sources.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Pressure–strain interaction. II. Decomposition in magnetic field-aligned coordinates

In weakly collisional and collisionless magnetized plasmas, the pressure–strain interaction describes the rate of conversion between bulk flow and thermal energy density. In this study, we derive an analytical expression for the pressure–strain interaction in a coordinate system with an axis aligned with the local magnetic field. The result is eight groups of terms corresponding to different physical mechanisms that can contribute to the pressure–strain interaction. We provide a physical description of each term. Here, the results are immediately of interest to weakly collisional and collisionless magnetized plasmas and the fundamental processes that happen therein, including magnetic reconnection, magnetized plasma turbulence, and collisionless shocks. The terms in the field-aligned coordinate decomposition are likely accessible to measurement with satellite observations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Pressure–strain interaction. III. Particle-in-cell simulations of magnetic reconnection

How energy is converted into thermal energy in weakly collisional and collisionless plasma processes, such as magnetic reconnection and plasma turbulence, has recently been the subject of intense scrutiny. The pressure–strain interaction has emerged as an important piece, as it describes the rate of conversion between bulk flow and thermal energy density. In two companion studies, we presented an alternate decomposition of the pressure–strain interaction to isolate the effects of converging/diverging flow and flow shear instead of compressible and incompressible flow, and we derived the pressure–strain interaction in magnetic field-aligned coordinates. Here, we use these results to study pressure–strain interaction during two-dimensional anti-parallel magnetic reconnection. We perform particle-in-cell simulations and plot the decompositions in both Cartesian and magnetic field-aligned coordinates. We identify the mechanisms contributing to positive and negative pressure–strain interaction during reconnection. Furthermore, this study provides a roadmap for interpreting numerical and observational data of the pressure–strain interaction, which should be important for studies of reconnection, turbulence, and collisionless shocks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗