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At least 1,135 records · Page 63
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Outdoor performance testing of thin-film devices

The Advanced Systems Research Group supports the photovoltaic advanced R&D (PV AR&D) project by providing outdoor (global) testing of PV cells, submodules, modules, and arrays. The group also provides in house engineering and analysis to identify and determine how technical issues such as cell/module/system adaptations, long term stability, reliability, economics, materials availability, safety, and environmental impacts affect the development and ultimate use of advanced PV thin film, innovative cell, and material technologies. A major thrust of the research effort is to develop and utilize instrumentation and procedures for monitoring and analyzing PV cells and submodules including outdoor performance and stability testing and life cycle accelerated stress testing. To accomplish the above, the solar energy research institute (SERI) outdoor PV test facility was established in 1982. The group has designed testing systems and analysis procedures for, and has tested, numerous amorphous silicon thin film submodules provided by SERI subcontractors and has performed long term outdoor stability tests on CdS/CuIr Se sub 2 and hydrogen passivated silicon solar cells. A significant contribution from this facility over the past year was the testing of large area amorphous silicon submodules.

Source record↗
DOE OSTI2025

Altermagnetic Band Splitting in 10 nm Epitaxial CrSb Thin Films

Altermagnets are a newly identified family of collinear antiferromagnets with a momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Néel transition temperature of around 700 K. Molecular beam epitaxy is used to synthesize CrSb (0001) thin films with thicknesses ranging from 10 to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a bulk-type, 3D momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the ∼10 nm thin film limit at room temperature.

Santhosh, Sandra↗
DOE OSTI2020

Directly measuring the structural transition pathways of strain-engineered VO 2 thin films

Epitaxial films of vanadium dioxide (VO 2 ) on rutile TiO 2 substrates provide a means of strain-engineering the transition pathways and stabilizing of the intermediate phases between monoclinic (insulating) M1 and rutile (metal) R end phases. In this work, we investigate structural behavior of epitaxial VO 2 thin films deposited on isostructural MgF 2 (001) and (110) substrates via temperature-dependent Raman microscopy analysis. The choice of MgF 2 substrate clearly reveals how elongation of V–V dimers accompanied by the shortening of V–O bonds triggers the intermediate M2 phase in the temperature range between 70–80 °C upon the heating–cooling cycles. Consistent with earlier claims of strain-induced electron correlation enhancement destabilizing the M2 phase our temperature-dependent Raman study supports a small temperature window for this phase. The similarity of the hysteretic behavior of structural and electronic transitions suggests that the structural transitions play key roles in the switching properties of epitaxial VO 2 thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Restoration of weak localization in bilayer graphene by a molecular thin film

Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene (BLG) is known to be susceptible to quantum interference corrections of the conductivity, presenting weak localization at all electronic densities, and dependent on different scattering mechanisms such as those related to the trigonal warping of the electron dispersion near the K and K′ valleys. Proximity effects with a molecular thin film influence these scattering mechanisms, which can be quantified through the known theory of magnetoconductance for BLG. Here, we present electronic transport measurements in a copper-phthalocyanine (CuPc) / BLG / hexagonal boron nitride (h-BN) heterostructure that suggest the restoration of weak localization in BLG, associated to a reduction of trigonal warping effects, that are known to suppress weak localization in BLG. Additionally, we observe a charge transfer of 3.6×10 12 cm −2 from the BLG to the molecules, as well as a very small degradation of the mobility of the BLG/h-BN heterostructure upon the deposition of CuPc. The molecular arrangement of the CuPc thin film is characterized in a control sample through transmission electron microscopy, that we relate to the electronic transport results.

bilayer graphene↗
DOE OSTI2023

Efficient and stable perovskite solar cells based on blade-coated CH 3 NH 3 PbI 3 thin films fabricated using “green” solvents under ambient conditions

Metal halide perovskites are considered the most promising candidates for solar cells of the decade due to their exceptional optical and electronic properties. The power conversion efficiency of metal halide perovskites, when incorporated as the active layer of solar cells, has become comparable to that observed for conventional silicon solar cells. However, the stability, scaleup, green solvent usage, and fabrication in ambient conditions of metal halide perovskites need to be solved for commercial applications. Here, in this work, we report the fabrication of blade-coated methylammonium lead iodide (MAPbI 3 ) perovskite thin films using methylamine and acetonitrile as “green” solvents under ambient conditions. Our perovskite films are initially prepared from low purity PbI2 (99%) and are blade-coated in dry air at relative humidity (RH) levels above 30%. A significant advantage of fabricating our perovskite thin films via blade-coating protocols is that there is a minimal amount of precursors (5 μL) used compared to spin-coating methods (50μL–60μL) for a 4 cm 2 substrate. With the addition of a small amount of an organic halide salt, namely, phenethylammonium chloride, the film crystallinity is improved and non-radiative recombination is suppressed, resulting in power conversion efficiencies over 20%. In addition, the device maintains more than 95% of its initial efficiency after 500 h under continuous light illumination of 1-sun at open circuit conditions, 50 °C and 60% RH. The above method leads a path towards the commercial fabrication of perovskite solar cells.

14 SOLAR ENERGY↗
DOE OSTI2023

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

The influence of biaxial stress on the maximum and remanent polarizations of 10 nm thick hafnium zirconium oxide thin films in metal–ferroelectric–metal capacitor structures has been quantified. In the as-prepared state with a nominal biaxial tensile strain of 0.20% and no applied extrinsic stress, remanent and maximum polarizations of 7.6 and 13.1 μC/cm 2 , respectively, were measured using a 2 MV/cm applied electric field. Reducing the intrinsic strain by 0.111% through the application of a compressive uniaxial stress results in a decrease in the remanent and maximum polarizations to 6.8 and 12.2 μC/cm 2 , respectively. Here, the polarization dependence on strain is nearly linear between these values. The observed variation in polarization with strain is consistent with strain impacting ferroelastic switching whereby in-plane tension increases the fraction of the short polar axis orienting out-of-plane, hence increasing out-of-plane polarization. In contrast, reducing the in-plane strain through compression results in an increase in the fraction of the long non-polar axis orienting out-of-plane, thereby decreasing out-of-plane polarization.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Wet Brush Homopolymers as “Smart Solvents” for Rapid, Large Period Block Copolymer Thin Film Self-Assembly

The spontaneous formation of periodic nanopatterns through the self-assembly of block copolymer (BCP) thin films offers an enticing path to engineer functional material properties over large areas, but the prohibitively slow ordering of ultrahigh molecular weight BCPs that generate large pattern periods (>100 nm) severely restricts the design space in which BCPs may be used. Here, we demonstrate that blending lamellae-forming polystyrene-block-poly(methyl methacrylate) diblock copolymers with very low molecular weight polystyrene and poly(methyl methacrylate) homopolymers can reduce by an order-of-magnitude the times required to form ordered large period patterns through solvent vapor annealing. Using in situ grazing-incidence small-angle X-ray scattering and ex situ electron microscopy, we show that the added homopolymer plasticizers act as a “smart solvent”: They increase the mobility of the long BCP chains by amplifying the dilution effect during solvent vapor annealing but segregate to like domains during subsequent thermal annealing to produce high-quality patterns with periods that may exceed 200 nm, which are readily transferred to other materials. The dramatic impact of homopolymer plasticizers may help extend the use of BCPs into new areas, particularly for visible light photonic applications that demand larger period nanopatterns.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Growth of nanostructured molybdenum disulfide (MoS 2 ) thin films on a nanohole-patterned substrate using plasma-enhanced atomic layer deposition (ALD)

Nanostructured molybdenum disulfide (MoS 2 ) thin films were grown on a nanohole-patterned silicon substrate using plasma-enhanced atomic layer deposition. A nanoscale hole-patterned silicon substrate was fabricated for the growth of MoS 2 film using the self-assembly-based nanofabrication method. The nanoscale holes can significantly increase the surface area of the substrate while the formation and growth of nanostructures normally start at the surface of the substrate. Hydrogen sulfide (H 2 S) gas was used as the S source in the growth of molybdenum disulfide (MoS 2 ) while molybdenum (V) chloride (MoCl 5 ) powder was used as the Mo source. The MoS 2 film had a stoichiometric ratio of 1 (Mo) to 2 (S), and had peaks of E 1 2g and A 1g , which represent the in-plane and out-plane vibration modes of the Mo–S bond, respectively. It was found that the MoS 2 film grown in the nanoscale hole, especially at the wall of the hole, has more hexagonal-like structures due to the effects of nanoscale space confinement and the nanoscale interface although the film shows an amorphous structure. Post-growth high-temperature annealing ranging from 800 to 900 °C produced local crystalline structures in the film, which are compatible with those reported by other researchers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Texture Formation in Polycrystalline Thin Films of All‐Inorganic Lead Halide Perovskite

Abstract Controlling grain orientations within polycrystalline all‐inorganic halide perovskite solar cells can help increase conversion efficiencies toward their thermodynamic limits; however, the forces governing texture formation are ambiguous. Using synchrotron X‐ray diffraction, mesostructure formation within polycrystalline CsPbI 2.85 Br 0.15 powders as they cool from a high‐temperature cubic perovskite (α‐phase) is reported. Tetragonal distortions (β‐phase) trigger preferential crystallographic alignment within polycrystalline ensembles, a feature that is suggested here to be coordinated across multiple neighboring grains via interfacial forces that select for certain lattice distortions over others. External anisotropy is then imposed on polycrystalline thin films of orthorhombic (γ‐phase) CsPbI 3‐ x Br x perovskite via substrate clamping, revealing two fundamental uniaxial texture formations; i) I‐rich films possess orthorhombic‐like texture (<100> out‐of‐plane; <010> and <001> in‐plane), while ii) Br‐rich films form tetragonal‐like texture (<110> out‐of‐plane; <110> and <001> in‐plane). In contrast to relatively uninfluential factors like the choice of substrate, film thickness, and annealing temperature, Br incorporation modifies the γ‐CsPbI 3− x Br x crystal structure by reducing the orthorhombic lattice distortion (making it more tetragonal‐like) and governs the formation of the different, energetically favored textures within polycrystalline thin films.

Steele, Julian A.↗
DOE OSTI2025

Ultrahigh-power-density flexible piezoelectric energy harvester based on freestanding ferroelectric oxide thin films

Flexible piezoelectric nanogenerators are emerging as a promising solution for powering next-generation flexible electronics by converting mechanical energy into electrical energy. However, traditional ferroelectric ceramics, despite their excellent piezoelectric properties, lack flexibility; while piezoelectric polymers, although highly flexible, have low piezoelectricity. The quest to develop materials that combine high piezoelectricity with exceptional flexibility has thus become a research focus. Herein, we present a breakthrough in this field with the fabrication of freestanding (111)-oriented PbZr 0.52 Ti 0.48 O 3 single crystalline thin films, which exhibit remarkable flexibility and a high converse piezoelectric coefficient (~585 pm/V). This is achieved through water-soluble sacrificial layer to relieve substrate clamping and controlling the crystal orientation to further enhance the piezoelectric response. Our nanogenerators, constructed using these freestanding nanoscale membranes, demonstrate a record-high output power density (~63.5 mW/cm 3 ), excellent flexibility (with a strain tolerance >3.4%), and superior mechanical stability in cycling tests (>60,000 cycles). These advancements pave the way for high-performance, flexible electronic devices utilizing ferroelectric oxide thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2004

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

large-area electronics↗
DOE OSTI2020

Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO 4 Thin-Film Solid Electrolytes

Atomic layer deposition (ALD) was used to control the stoichiometry of thin lithium aluminosilicate films, thereby enabling crystallization into the ion-conducting β-eucryptite LiAlSiO 4 phase. Here, the rapid thermal annealed ALD film developed a well-defined epitaxial relationship to the silicon substrate: β-LiAlSiO4 ($1\bar{21}0$)||Si (100) and β-LiAlSiO 4 ($10\bar{10}$)||Si (001). The extrapolated room temperature ionic conductivity was found to be 1.2 × 10 –7 S/cm in the [$1\bar{21}0$] direction. Because of the unique 1-D channel along the c axis of β-LiAlSiO 4 , the epitaxial thin film has the potential to facilitate ionic transport if oriented with the c axis normal to the electrode surface, making it a promising electrolyte material for three-dimensional lithium-ion microbatteries.

25 ENERGY STORAGE↗
DOE OSTI2024

Simultaneous Solid Electrolyte Deposition and Cathode Lithiation for Thin Film Batteries and Lithium Iontronic Devices

Here we show that the deposition of the solid-state electrolyte LiPON onto films of V 2 O 5 leads to their uniform lithiation of up to 2.2 Li per V 2 O 5 , without affecting the Li concentration in the LiPON and its ionic conductivity. Our results indicate that Li incorporation occurs during LiPON deposition, in contrast to earlier mechanisms proposed to explain postdeposition Li transfer between LiPON and LiCoO 2 . We use our discovery to demonstrate symmetric thin film batteries with a capacity of >270 mAh/g, at a rate of 20C, and 1600 cycles with only 8.4% loss in capacity. We also show how autolithiation can simplify fabrication of Li iontronic transistors attractive for emerging neuromorphic computing applications. Our discovery that LiPON deposition results in autolithiation of the underlying insertion oxide has the potential to substantially simplify and enhance the fabrication process for thin film solid state Li ion batteries and emerging lithium iontronic neuromorphic computing devices.

25 ENERGY STORAGE↗
DOE OSTI2021

EBSD of Rough Native CuInGaSe2 Thin-Films

The polycrystalline Cu (In, Ga) Se2, or CIGS, based thin-film materials system has long been studied for use in photovoltaic technologies, where its bandgap tunability, mechanical flexibility, and relatively low production costs are all appealing. Nonetheless, significant defect populations, which serve to reduce efficiency, create performance instabilities, and increase concerns about long-term reliability, have hindered wide-scale adoption. Prior work, including application of a scanning probe based deep level trap spectroscopy (SP-DLTS) defect mapping technique and scanning transmission electron microscope (STEM) based electron energy loss spectroscopy (EELS), has shown that the most detrimental defects, with energy level near mid-gap (thus serving as a carrier recombination center), are most likely caused by CuIn/Ga antisites and tend to cluster at or around certain grain boundaries [1,2]. However, the exact nature of these particular boundaries — their structures, chemistries, or even the relative misorientation of their associated grains — and their relation to this defect clustering and/or its formation is yet unknown. As such, electron backscatter diffraction (EBSD) orientation mapping, directly correlated with defect-sensitive techniques like SP-DLTS and/or STEM-EELS, could prove critical for providing the final missing links toward understanding the mechanisms behind these defects. Indeed, recent studies using correlative electron beam induced current (EBIC) with EBSD have been able to identify boundaries, and their relative misorientations, that possess detrimental electronic properties [3]. However, because EBIC is unable to resolve the defect energy levels, many questions are left unanswered. Furthermore, this study, and others like it, employed focused ion beam (FIB) milling to flatten the natively-rough CIGS [3-5], which may run the risk of changing the nature of any near-surface defect structures.

14 SOLAR ENERGY↗
DOE OSTI2023

Oxidation and Reduction of Polycrystalline Cerium Oxide Thin Films in Hydrogen

This study investigates the oxidation state of ceria thin films' surface and subsurface under 100 mTorr hydrogen using ambient pressure X-ray photoelectron spectroscopy. We examine the influence of the initial oxidation state and sample temperature (25-450 °C) on the interaction with hydrogen. Our findings reveal that the oxidation state during hydrogen interaction involves a complex interplay between oxidizing hydride formation, reducing thermal reduction, and reducing formation of hydroxyls followed by water desorption. In all studied conditions, the subsurface exhibits a higher degree of oxidation compared to the surface, with a more subtle difference for the reduced sample. The reduced samples are significantly hydroxylated and covered with molecular water at 25 °C. We also investigate the impact of water vapor impurities in hydrogen. We find that although 1 × 10 -6 Torr water vapor oxidizes ceria, it is probably not the primary driver behind the oxidation of reduced ceria in the presence of hydrogen.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Review on the growth, properties and applications of self-assembled oxide–metal vertically aligned nanocomposite thin films—current and future perspectives

Self-assembled oxide–metal nanocomposite thin films have aroused great research interest owing to their wide range of functionalities, including metamaterials with plasmonic and hyperbolic optical properties, and ferromagnetic, ferroelectric and multiferroic behaviors. Oxide–metal nanocomposites typically self-assemble as metal particles in an oxide matrix or as a vertically aligned nanocomposite (VAN) with metal nanopillars embedded in an oxide matrix. Among them, the VAN architecture is particularly interesting due to the vertical strain control and highly anisotropic structure, enabling the epitaxial growth of materials with large lattice mismatch. In this review, the driving forces behind the formation of self-assembled oxide–metal VAN structures are discussed. Specifically, an updated in-plane strain compensation model based on the areal strain compensation concept has been proposed in this review, inspired by the prior linear strain compensation model. It provides a guideline for material selection for designing VAN systems, especially those involving complex orientation matching relationships. Based on the model, several case studies are discussed, comparing the microstructure and morphology of different oxide–metal nanocomposites by varying the oxide phase. Specific examples highlighting the coupling between the electrical, magnetic and optical properties are also discussed in the context of oxide–metal nanocomposites. Finally, future research directions and needs are also discussed.

36 MATERIALS SCIENCE↗