Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SEMICONDUCTOR DEVICE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,135 records · Page 63
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Ferromagnetic resonators synthesized by metal-organic decomposition epitaxy

Abstract Metal-organic decomposition epitaxy is an economical wet-chemical approach suitable to synthesize high-quality low-spin-damping films for resonator and oscillator applications. This work reports the temperature dependence of ferromagnetic resonances and associated structural and magnetic quantities of yttrium iron garnet nanofilms that coincide with single-crystal values. Despite imperfections originating from wet-chemical deposition and spin coating, the quality factor for out-of-plane and in-plane resonances approaches 600 and 1000, respectively, at room temperature and 40 GHz. These values increase with temperature and are 100 times larger than those offered by commercial devices based on complementary metal-oxide semiconductor voltage-controlled oscillators at comparable production costs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Disruptive Photovoltaic Technologies Can Accelerate Global Decarbonization

This contribution explores PV manufacturing capacity expansion trajectories needed to achieve the goal of global decarbonization assuming that investors make financially rational decisions avoiding stranded production assets while still effectively exploiting experience curve benefits in both manufacturing process and product design. Substantial production cost savings and timely decarbonization risk mitigation could accrue by adoption and scaling of high efficiency multijunction device architectures and thin film direct bandgap semiconductor technologies that provide lower manufacturing capital intensity. We demonstrate that there is a $1-2 trillion market opportunity for such disruptive technologies while also providing hundreds of billions of dollars of cost savings to reach total decarbonization.

decarbonization↗
DOE OSTI2016

Moore’s Law: The Life of Gordon Moore, Silicon Valley’s Quiet Revolutionary Arnold Thackray, David C. Brock, and Rachel Jones

Five decades ago, Gordon Moore, who would go on to co-found Intel Corporation, made a prescient observation about the exponential advance of semiconductor technology with a corresponding decrease in device cost. His prediction about the pace of doubling of the number of transistors in an integrated circuit came to be known eponymously as Moore’s law and has held true for 50 years. He also foresaw, way back in 1965, the development of home computers, electronic controls in automobiles, portable communications systems, and electronic wrist watches. Moore’s fascinating life, characterized by relentless innovation, charity and breathtaking humility, is the subject of this comprehensive authorized biography. The enthralling narrative is the product of collaboration between an academic (Thackray), a technology historian (Brock) and a journalist (Jones), and draws its material from numerous interviews, Moore’s meticulously maintained notes and professional records, personal papers, industry data, published volumes, and news accounts.

biography↗
DOE OSTI2018

Novel Approach to Front Contact Passivation for CdTe Photovoltaics

The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

14 SOLAR ENERGY↗
DOE OSTI2019

Combined microscopy studies of complex electronic materials. Final report

The aim of this project was to study the electronic properties of exotic electronic materials which are only available as micron-scale samples or have microscopic inhomogeneity, using a special combination of multiple submicron scanning microscopy techniques allied to control of temperature, magnetic and electric fields and mechanical strain. In nanobeams of VO 2 , with its still mysterious metal-insulator phase transition, we determined the phase diagram and demonstrated that hydrogen diffusion is strongly channelled along one crystal axis. Using graphene, we developed and applied the scanning photo-Nernst effect, in which a current is generated when a laser is focused on the edge a sample in a magnetic field. We demonstrated that CrI 3 , a two-dimensional layered magnet, retains true Ising ferromagnetization down the monolayer level due to its out-of-plane anisotropy. In exfoliated WTe 2 , a layered topological semimetal, we discovered that monolayers are the first monolayer topological insulator and we imaged the helical edge states with scanning microwave microscopy. We also discovered that the same material when stacked in a few layers is a ferroelectric metal, and that the monolayer can be converted to a superconducting state by electron doping with a gate a temperatures below 1 K. Additionally, we developed the capability to perform momentum-resolved electronic spectroscopy on operating nanoscale devices by applying micron-scale angle resolved photoemission spectroscopy to two-dimensional heterostructure devices incorporating graphene and transition metal dichalcogenide semiconductors. Using it, we measured the band gaps of a series of monolayer semiconductors and observed band renormalization as a function of electron doping in monolayer WSe 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Multiplication of freestanding III-V semiconductor membranes from a single wafer by alternating growth with amorphous graphene interlayer

Freestanding single-crystalline III-V compound semiconductors are important building blocks for functional devices due to their high electron mobilities, a wide range of bandgaps, and excellent optoelectronic properties. Despite efforts to produce such membranes by detaching epitaxial layers from donor wafers, current methods suffer from either slow processes or poor material quality. Here, we demonstrate a technique to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, a process to directly grow amorphous graphene on III-V substrates in metal-organic chemical vapor deposition reactors is developed, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of amorphous graphene and III-V epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because amorphous graphene provides a weak van der Waals interface that allows peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.

Han, Ne Myo↗
DOE OSTI2016

Methods for forming particles

Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI.sub.2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI.sub.2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

14 SOLAR ENERGY↗
DOE OSTI2022

Multiplication of freestanding III-V semiconductor membranes from a single wafer by alternating growth with amorphous graphene interlayer

Freestanding single-crystalline III-V compound semiconductors are important building blocks for functional devices due to their high electron mobilities, a wide range of bandgaps, and excellent optoelectronic properties. Despite efforts to produce such membranes by detaching epitaxial layers from donor wafers, current methods suffer from either slow processes or poor material quality. Here, we demonstrate a technique to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, a process to directly grow amorphous graphene on III-V substrates in metal-organic chemical vapor deposition reactors is developed, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of amorphous graphene and III-V epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because amorphous graphene provides a weak van der Waals interface that allows peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.

Han, Ne Myo↗
DOE OSTI2023

Probing transport energies and defect states in organic semiconductors using energy resolved electrochemical impedance spectroscopy

Abstract Determining the relative energies of transport states in organic semiconductors is critical to understanding the properties of electronic devices and in designing device stacks. Futhermore, defect states are also highly important and can greatly impact material properties and device performance. Recently, energy‐resolved electrochemical impedance spectroscopy (ER‐EIS) is developed to probe both the ionization energy (IE) and electron affinity (EA) as well as sub‐bandgap defect states in organic semiconductors. Herein, ER‐EIS is compared to cyclic voltammetry (CV) and photoemission spectroscopies for extracting IE and EA values, and to photothermal deflection spectroscopy (PDS) for probing defect states in both polymer and molecular organic semiconductors. The results show that ER‐EIS determined IE and EA are in better agreement with photoemission spectroscopy measurements as compared to CV for both polymer and molecular materials. Furthermore, the defect states detected by ER‐EIS agree with sub‐bandgap features detected by PDS. Surprisingly, ER‐EIS measurements of regiorandom and regioregular poly(3‐hexylthiophene) (P3HT) show clear defect bands that occur at significantly different energies. In regioregular P3HT the defect band is near the edge of the occupied states while it is near the edge of the unoccupied states in regiorandom P3HT.

14 SOLAR ENERGY↗
DOE OSTI2015

Au-Cu{sub 2}O core-shell nanowire photovoltaics

Semiconductor nanowires are among the most promising candidates for next generation photovoltaics. This is due to their outstanding optical and electrical properties which provide large optical cross sections while simultaneously decoupling the photon absorption and charge carrier extraction length scales. These effects relax the requirements for both the minority carrier diffusion length and the amount of semiconductor needed. Metal-semiconductor core-shell nanowires have previously been predicted to show even better optical absorption than solid semiconductor nanowires and offer the additional advantage of a local metal core contact. Here, we fabricate and analyze such a geometry using a single Au-Cu{sub 2}O core-shell nanowire photovoltaic cell as a model system. Spatially resolved photocurrent maps reveal that although the minority carrier diffusion length in the Cu{sub 2}O shell is less than 1 μm, the radial contact geometry with the incorporated metal electrode still allows for photogenerated carrier collection along an entire nanowire. Current-voltage measurements yield an open-circuit voltage of 600 mV under laser illumination and a dark diode turn-on voltage of 1 V. This study suggests the metal-semiconductor core-shell nanowire concept could be extended to low-cost, large-scale photovoltaic devices, utilizing for example, metal nanowire electrode grids coated with epitaxially grown semiconductor shells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO{sub 3}-buffered ferroelectric BaTiO{sub 3} film on GaAs

The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO{sub 3} thin films grown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO{sub 3} grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. Here, we use a combination of aberration-corrected scanning transmission electron microscopy and first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectric polarization of a BaTiO{sub 3} thin film grown on GaAs. We demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO{sub 3}), and propose that the presence of surface charge screening allows the formation of switchable domains.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Infrared Light-Emitting Devices from Antenna-Coupled Luttinger Liquid Plasmons In Carbon Nanotubes

Electrically driven light-emitting devices provide highly energy-efficient lighting at visible wavelengths, and they have transformed photonic and electronic lighting applications. Efficient infrared light-emitting devices, however, have been challenging because band gap emission from semiconductors becomes inefficient in the mid-infrared to far-infrared spectral range. Here, in this paper, we investigate infrared light-emitting devices (IRLEDs) based on Luttinger liquid (LL) plasmons in one-dimensional (1D) metallic carbon nanotubes. Elementary excitations in LL are characterized by collective charge and spin excitations, i.e., plasmons and spinons. Consequently, electrons injected into the nanotubes transform efficiently into LL plasmons, a hybrid excitation of electromagnetic fields and electrons. We design nanoantennas coupled to the carbon nanotube to radiate LL plasmons into the far field. LL-based IRLEDs can be designed to selectively emit at wavelengths across the far- and mid-infrared spectra. An electrical-to-optical power conversion efficiency up to 3.2% may be achieved. Such efficient and narrowband LL-based IRLEDs can enable novel infrared nanophotonic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Suppression of compensating native defect formation during semiconductor processing via excess carriers

In many semiconductors, compensating defects set doping limits, decrease carrier mobility, and reduce minority carrier lifetime thus limiting their utility in devices. Native defects are often responsible. Suppressing the concentrations of compensating defects during processing close to thermal equilibrium is difficult because formation enthalpies are lowered as the Fermi level moves towards the majority band edge. Excess carriers, introduced for example by photogeneration, modify the formation enthalpy of semiconductor defects and thus can be harnessed during crystal growth or annealing to suppress defect populations. Herein we develop a rigorous and general model for defect formation in the presence of steady-state excess carrier concentrations by combining the standard quasi-chemical formalism with a detailed-balance description that is applicable for any defect state in the bandgap. Considering the quasi-Fermi levels as chemical potentials, we demonstrate that increasing the minority carrier concentration increases the formation enthalpy for typical compensating centers, thus suppressing their formation. Furthermore, this effect is illustrated for the specific example of GaSb. While our treatment is generalized for excess carrier injection or generation in semiconductors by any means, we provide a set of guidelines for applying the concept in photoassisted physical vapor deposition.

14 SOLAR ENERGY↗
DOE OSTI2023

Enhanced thermoelectric performance via quantum confinement in a metal oxide semiconductor field effect transistor for thermal management

Abstract The performance of thermoelectric devices is gauged by the dimensionless figure of merit $${{{{{\boldsymbol{ZT}}}}}}$$ ZT . Improving $${{{{{\boldsymbol{ZT}}}}}}$$ ZT has proven to be a formidable challenge given the interdependence of its constitutive quantities, namely Seebeck coefficient, electrical conductivity, thermal conductivity, and temperature. Here, we use quantum confinement to decouple Seebeck coefficient and electrical conductivity to demonstrate an order of magnitude quantum-based enhancement to the thermoelectric figure of merit $${{{{{\boldsymbol{ZT}}}}}}$$ ZT in complimentary metal-oxide-semiconductor field-effect transistors. While most quantum-based enhancement is done through physical confinement using two-dimensional materials, our approach uses electrical confinement. Because of this, our device is more robust than the two-dimensional materials currently used. We further articulate that improvement by as much as a factor of 50 could be achieved in a practical setting. Our approach further provides a path for monolithic integration of on-chip coolers and energy scavengers with virtually no deviation from the fabrication flow of standard electronics.

Oxandale, Samuel W. (ORCID:0000000207484066)↗
DOE OSTI2021

Metamaterial-Inspired Vacuum Electron Devices and Accelerators

Metamaterials (MTMs) are structured materials with subwavelength features that can be engineered to have some unique properties not found in nature, such as negative refractive index, reversed Doppler effect, and reversed Cherenkov radiation. Based on these novel MTMs, several important research groups have made great attempts to develop novel MTM-inspired vacuum electron devices (VEDs) and accelerators. Just as solid-state power devices are innovated by incessant emerging of new semiconductor materials, VEDs can also be inspired by MTMs to have very remarkable advantages, such as smaller size, higher power, higher efficiency, and/or larger gain relative to conventional VEDs, such as traveling-wave tubes, backward-wave oscillators, and klystrons. Similarly, relative to conventional accelerators, MTM-inspired accelerators have obvious advantages, such as smaller size and higher accelerating gradient. Furthermore, MTM-inspired devices have promising applications in areas such as radar, communication, electronic warfare, microwave heating, and imaging.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

Metamaterial-Inspired Vacuum Electron Devices and Accelerators

Metamaterials (MTMs) are structured materials with subwavelength features that can be engineered to have some unique properties not found in nature, such as negative refractive index, reversed Doppler effect, and reversed Cherenkov radiation. Based on these novel MTMs, several important research groups have made great attempts to develop novel MTM-inspired vacuum electron devices (VEDs) and accelerators. Just as solid-state power devices are innovated by incessant emerging of new semiconductor materials, VEDs can also be inspired by MTMs to have very remarkable advantages, such as smaller size, higher power, higher efficiency, and/or larger gain relative to conventional VEDs, such as traveling-wave tubes, backward-wave oscillators, and klystrons. Similarly, relative to conventional accelerators, MTM-inspired accelerators have obvious advantages, such as smaller size and higher accelerating gradient. In addition, MTM-inspired devices have promising applications in areas such as radar, communication, electronicwarfare,microwave heating, and imaging.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

Photogeneration and enhanced charge transport in aligned smectic liquid crystalline organic semiconductor

Liquid crystalline organic semiconductors are emerging candidates for applications in electronic and photonic devices. One of the most attractive aspects of such materials is the potential, in principle, to easily control and manipulate the molecular alignment of the semiconductor over large length scales. Here, we explore the consequences of alignment in a model smectic liquid crystalline semiconductor, and find that the photogeneration efficiency is a strong function of incident polarization in aligned samples. A straightforward theory shows that such behavior is a general feature of aligned materials, regardless of the details of photophysics. Furthermore, we uncover tentative evidence that the mobility of aligned samples is substantially enhanced. Both of these phenomena are of significant technological importance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Review of using gallium nitride for ionizing radiation detection

With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by {sup 14}N(n,p){sup 14}C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗