Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet
We investigated spin-to-charge current conversion in sputtered Y 3 Fe 5 O 12 (YIG)/granular bismuth selenide (GBS) bi-layers at room temperature. The spin current is pumped to the GBS layer by the precession of magnetization at ferromagnetic resonance in the YIG layer. The spin-mixing conductance is determined to be as large as (13.64 ± 1.32) × 10 18 m -2 , which is larger than that of YIG/Pt and comparable or better than that of YIG/crystalline bismuth selenide indicating that GBS is a good spin-sink. The figure of merit of spin-to-charge conversion, the inverse Edelstein effect length ( λ IEE ), is estimated to be as large as (0.11 ± 0.03) nm. λ IEE shows GBS film thickness dependence, and its value is three times as large as in crystalline bismuth selenide. The λ IEE value larger than that of crystalline bismuth selenide and other topological insulators indicates that the spin-to-charge conversion is due to the spin-momentum locking. As the thickness of GBS increases, λ IEE decreases, which means the figure-of-merit of spin-to-charge conversion is influenced by grain size.