Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “PASSIVATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,135 records · Page 63
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Surface defect passivation of MoS{sub 2} by sulfur, selenium, and tellurium

Few-layer MoS{sub 2} field-effect transistors often show an n-type conduction behavior due to the presence of high-density sulfur vacancies. Here, we investigated the possibility of surface defect passivation of MoS{sub 2} by sulfur treatment in (NH{sub 4}){sub 2}S solution or coating with an ultrathin layer of selenium or tellurium. It was found that all three elements investigated are able to induce a p-doping effect through suppressing the residual electron concentration by an amount exceeding 0.5 × 10{sup 12 }cm{sup −2} in few-layer MoS{sub 2}. Among them, the sulfur-treatment exhibits the most superior thermal stability that survives thermal annealing at temperatures ≥120 °C for at least 10 h. Tellurium exhibits the strongest p-doping effect due to electron trapping by physisorption-induced gap states near the valence band edge. On the other hand, selenium is highly volatile on MoS{sub 2}; it evaporates and desorbs easily due to Joule heating during electrical measurements in vacuum. The results of first-principles calculations support the experimental observations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not only the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Effect of nitrogen passivation on interface composition and physical stress in SiO 2 /SiC(4H) structures

Here, the electron density and physical stress at the thermally oxidized SiC/SiO 2 interface, and their change with nitrogen incorporation, were observed using x-ray reflectivity, Raman scattering, and a novel stress determination technique. There is no evidence for residual carbon species at the SiO 2 /SiC. Instead, a ~1 nm thick low electron density layer is formed at this interface, consistent with interfacial suboxides (SiO x , 0.3 < x < 2), along with high interfacial stress. Nitrogen passivation, a known process to improve the interface state density and electronic properties, eliminates the low density component and simultaneously releases the interface stress. On the basis of these findings, a new chemical interaction model is proposed to explain the effect of the nitrogen, and a guideline, stress managing together with elemental control of the dielectric/SiC interface, is suggested to achieve high quality gate stack on SiC.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Introduction, Investigation, and Experimental Validation of a Novel Passive Neutron Spectrometer

Unfolding neutron energy spectra are instrumental for determining personal health effects and calculating dose received. This area of study is heavily researched, and Lawrence Livermore National Laboratory (LLNL) is investigating a passive neutron spectrometer for the purpose of acquiring the information needed to determine personnel dose in the event of a criticality accident. A part of this investigation is presented in this article through the examination of four experimental detector responses (DRs). These four DRs were acquired in the presence of 252 Cf, AmBe, GODIVA, and National Ignition Facility (NIF) neutron sources. An algorithm developed at LLNL was used to unfold the neutron fluence from each of the four DRs, and subsequently, fluence-to-dose conversion factors provided by the American National Standards Institute were used to calculate dose. Additionally, a multistep unfolding process was developed and employed to calculate the effects of both direct (from the source) and indirect (from room return) neutrons. The average error when unfolding the direct DR was less than 8%. The dose from 252 Cf was predicted with only 8% error. The multistep approach allowed for the identification of the low-energy neutrons in the 252 Cf, AmBe, and NIF DRs.

Nuclear Criticality Safety Program (NCSP)↗
DOE OSTI2023

On the minimum transport required to passively suppress runaway electrons in SPARC disruptions

In Izzo et al (2022 Nucl. Fusion 62 096029), state-of-the-art modeling of thermal and current quench (CQ) magnetohydrodynamics (MHD) coupled with a self-consistent evolution of runaway electron (RE) generation and transport showed that a non-axisymmetric (n = 1) in-vessel coil could passively prevent RE beam formation during disruptions in SPARC, a compact high-field tokamak projected to achieve a fusion gain Q > 2 in DT plasmas. However, such suppression requires finite transport of REs within magnetic islands and re-healed flux surfaces; conservatively assuming zero transport in these regions leads to an upper bound of RE current ~1MA compared to ~8.7MA of pre-disruption plasma current. Further investigation finds that core-localized electrons, within r/a < 0.4 and with kinetic energies ~0.2–15 MeV, contribute most to the RE plateau formation. Yet only a relatively small amount of transport, i.e. a diffusion coefficient ~18 m 2 s -1 , is needed in the core to fully mitigate these REs. Properly accounting for (a) the CQ electric field's effect on RE transport in islands and (b) the contribution of significant RE currents to disruption MHD may help achieve this.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Modeling and Harmonic Stability of MMC-HVDC With Passive Circulating Current Filters

A modular multilevel converter (MMC) is an emerging converter technology widely used in wind power applications using high-voltage direct current (HVDC) transmission, and it has been largely investigated in medium-voltage solar harvesting as well as electric motor drives. Different from studies dealing with active circulating current control loops, this paper focuses on impedance modeling and harmonic stability studies for MMCs with passive circulating current filters (PCCFs). A power stage circuit including a PCCF is transformed and remodeled to obtain small-signal formulations. This transformation leads to additional high-order matrix computing complexity due to the added impedance subnetwork matrix from the PCCF as well as relevant crossed-frequency impacts. To simplify the computational burden, the proposed model aims to solve one arm equation instead of all six MMC arm equations. To achieve this result, additional challenges occur when the MMC is connected to a renewable energy source instead of the grid voltage, where low-level zero-sequence components might exist in the neutral point of three phases, especially in the case of no integrated advanced modular voltage balancing control, which prevents computational simplification. To overcome this challenge, further impedance matrix adjustments are conducted in this paper to theoretically suppress the impact of zero-sequence harmonics when obtaining small-signal impedance, taking into account the frequency coupling effect. Finally, simulations are carried out to validate the developed impedance model under different operating scenarios. Harmonic stability case studies of MMCs with PCCFs connected to renewable energy current sources are also presented, where frequency-domain stability analyses based on Bode diagrams are compared to time-domain simulation waveforms and FFTs, which validate the effectiveness of the proposed impedance model.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2013

Requirements for Prognostic Health Management of Passive Components in Advanced Small Modular Reactors

Advanced small modular reactors (aSMRs), which are based on modularization of advanced reactor concepts, may provide a longer-term alternative to traditional light-water reactors and near term small modular reactors (SMRs), which are based on integral pressurized water reactor (iPWR) concepts. aSMRs are conceived for applications in remote locations and for diverse missions that include providing process or district heating, water desalination, and hydrogen production. Several challenges exist with respect to cost-effective operations and maintenance (O&M) of aSMRs, including the impacts of aggressive operating environments and modularity, and limiting these costs and staffing needs will be essential to ensuring the economic feasibility of aSMR deployment. In this regard, prognostic health management (PHM) systems have the potential to play a vital role in supporting the deployment of aSMR systems. This paper identifies requirements and technical gaps associated with implementation of PHM systems for passive aSMR components.

Nondestructive Evaluation↗
DOE OSTI2023

A Data-Driven Passive Islanding Detection Scheme

This paper proposes a novel statistical parameters based data driven approach for passive islanding detection. The proposed scheme relies in the voltage data, measured at the point of common coupling, and is comprised of three stages. The Stage-1 quickly detects what is termed as coarse islanding, Stage-2 computes the decaying DC detector (DDCD), and 3) finally, the digital relay logic (DRL) is devised in Stage-3. The proposed scheme is tested as per the IEEE-1547, UL 1741 and IEC-62116 standards. Various tests are investigated on the modified IEEE-13 bus system, modeled in PSCAD/EMTDC, under stringent test scenarios such as power mismatch, induction motor starting effect, capacitor bank switching and various level of loads changes, considered for both single and multiple DG systems. The test results reveal that the proposed scheme can detect islanding in less than 2 cycles, and results in nearly zero non detection zone (NDZ). Also, the scheme can very well be used for single-phase microgrids too as it relies only on the single phase voltage information.

anti-islanding protection↗
DOE OSTI2015

Implementation of Tunneling Passivated Contacts into Industrially Relevant n-Cz Si Solar Cells

We identify bottlenecks, and propose solutions, to implement a B-diffused front emitter and a backside pc-Si/SiO2 pasivated tunneling contact into high efficiency n-Cz Si cells in an industrially relevant way. We apply an O-precipitate dissolution treatment to make n-Cz wafers immune to bulk lifetime process degradation, enabling robust, passivated B front emitters with J0 <; 20fA/cm2. Adding ultralow recombination n+ pc-Si/SiO2 back contacts enables pre-metallized cells with iVoc=720 mV and J0=8.6 fA/cm2. However, metallization significantly degrades performance of these contacts due to pinholes and possibly, grain boundary diffusion of primary metal and source contaminates such as Cu. An intermediate, doped a-Si:H capping layer is found to significantly block the harmful metal penetration into pc-Si.

14 SOLAR ENERGY↗
DOE OSTI2018

A Novel Method to Investigate Stoichiometry and Performance of Buried Passivated Contacts Utilizing Time-of-Flight SIMS

We report on methods using time-of-flight secondary-ion mass spectrometry (TOF-SIMS) to elucidate critical information about the buried interfaces in interdigitated back-contact silicon solar cells. We examined the stoichiometry of the tunneling oxide with TOF-SIMS and X-ray photoelectron spectroscopy (XPS). Interestingly, the data indicates that the stoichiometry of the tunneling oxide moves away from SiO 2 towards lower stoichiometry (SiO x ) upon the crystallization annealing treatment, and towards SiO 2 again upon Al 2 O 3 deposition and a subsequent forming gas anneal. We also report on an important artifact for samples with an Al 2 O 3 passivation layer related to the oxygen content of the matrix.

14 SOLAR ENERGY↗
DOE OSTI2018

Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOx Based Passivated Contacts for High-Efficiency Silicon Solar Cells

We have compared the temperature dependence of the poly-Si/SiOx/c-Si contact performance for 1.5 and 2.2 nm thick SiOx. The optimum annealing temperature for these two is different, likely due to the SiOx influencing the extent of dopant diffusion into c-Si. At 1050 degrees C, while a contact with 1.5 nm SiOx significantly breaks up, the one with 2.2 nm SiOx develops pinholes. Using scanning Kelvin probe microscopy, we demonstrate that there is enhanced dopant diffusion through these pinholes. Finally, using electron-beam induced current measurements, we show that pinholes affect the local passivation quality of the c-Si wafer surface.

14 SOLAR ENERGY↗
DOE OSTI2020

Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiO x /poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiO x layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiO x /poly-Si structures can be influenced by both the properties of the SiO x layer and surface texture.

14 SOLAR ENERGY↗
DOE OSTI2021

Comparative Studies of Optoelectronic Properties, Structures, and Surface Morphologies for Phosphorus-Doped Poly-Si/SiOx Passivating Contacts

We investigated and compared optoelectronic properties, crystallographic structures, and nanoscale surface morphologies of ex-situ phosphorus-doped polycrystalline silicon (poly-Si)/SiO x passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition (PECVD), and low-pressure chemical vapour deposition (LPCVD)). Across all these deposition technologies, a similar trend is observed: higher diffusion temperatures yield films that are more crystalline but have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiO x interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. Firstly, the LPCVD method yields the roughest surface and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the smoothest surface for both as-deposited Si and annealed poly-Si films. Secondly, as-deposited sputtered and PECVD Si films contain only an amorphous phase whereas as-deposited LPCVD films has already had some crystalline phase. Thirdly, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods it is weakly dependent on thickness.

crystallographic structures↗
DOE OSTI2024

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

High frequency and high power are the driving forces behind semiconductor transistor technology. However, conventional devices have the tradeoff of either being high speed or high breakdown—but not both. Wafer-bonded current aperture vertical electron transistors (BAVETs) help eliminate the tradeoff by combining a high-speed III-As channel to a high-breakdown III-N drift region. The device presented herein comprises of an InAlAs gate-barrier/InGaAs channel, wafer-bonded to an InGaN/GaN drift region, with the InGaAs/InGaN interface referred to as the wafer-bonded interface (WBI). The electronic behavior of WBIs is yet less known but necessary in realizing the potential of a BAVET. Herein, strong trap activity at the WBI is shown to be the cause of abnormally high saturation voltage ( V DS_SAT ) in BAVETs. The traps cause unintentional space charge (SC) region in the drain region of the device. This causes a drain resistance, a higher ON-resistance ( R ON ), and a higher V DS_SAT . Here, the challenge is overcome by hydrogen passivation of traps at WBI by using a p-doping for the InAlAs layer, which reduces the trap-charge concentration at the WBI. Consequently, the width of the SC region is reduced and a reduction in V DS_SAT is demonstrated, wherein it reduces from >12 to 5 V.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A Data-Driven Passive Islanding Detection Scheme

This paper proposes a simple yet effective statistical parameters based passive islanding scheme. The proposed scheme relies only the voltage data, measured at the point of common coupling (PCC), and is comprised of three stages. The Stage-1 quickly computes what is termed as mean based coarse islanding detection (MID), Stage-2 computes the decaying DC detector (DDCD), and 3) finally, MID is used in conjunction with DDCD as per the statistical digital relay logic (SRDL) is devised in Stage-3 to distinguish between islanding events from non islanding events. Various tests are investigated on the Banshee's industrial Microgrid (MG), modelled in the Real Time Digital Simulator (RTDS), on the basis of the IEEE-1547, UL 1741 standards. The validation of the proposed islanding detection methodology (PIDM) in RTDS platform ensures the viability of the proposed scheme in practical systems. The test results reveal that the PIDM can detect islanding within 2 cycles, and results in a very small non detection zone (NDZ). Moreover, the scheme can very well be used for single-phase MG too as it relies only on the single phase voltage information.

anti-islanding protection↗
DOE OSTI2021

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

The choice of carrier wafer was found to significantly influence etch rates, selectivity, and morphology in GaN micropillar etching in a Cl 2 -Ar high-density inductively coupled plasma. 7 × 7 mm 2 GaN on sapphire chips with a plasma-enhanced chemical vapor deposition SiO 2 hard mask was etched on top of 4-in. fused silica, silicon carbide, silicon, sapphire, aluminum nitride, and high purity aluminum carriers. Silicon and silicon carbide carriers reduced GaN:SiO 2 selectivity because incidental SiCl x and CCl x etch products from the carriers attack the SiO 2 mask. Aluminum nitride and high-purity aluminum carriers yielded the highest GaN:SiO 2 selectivities due to the deposition of Al-based etched by-products, while the highest GaN etch rate was achieved using the sapphire carrier since it was the most inert carrier and did not sink any Cl 2 . Overall, results indicate that SiO 2 and Al may be used as passivation materials during GaN etching, as vertical profiles were achieved when SiO 2 or Al is redeposited from the fused silica and aluminum carriers, respectively. Floor pitting, trenching, sidewall roughness, and faceting were all influenced by carrier wafer type and will be discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Macrophysical properties of continental cumulus clouds from active and passive remote sensing

Cloud amount is an essential and extensively used macrophysical parameter of cumulus clouds. It is commonly defined as a cloud fraction (CF) from zenith-pointing ground-based active and passive remote sensing. However, conventional retrievals of CF from the remote sensing data with very narrow field-of-view (FOV) may not be representative of the surrounding area. Here we assess its representativeness using an integrated dataset collected at the U.S. Department of Energy (DOE) Atmospheric Radiation Measurement (ARM) program's Southern Great Plains (SGP) site in Oklahoma, USA. For our assessment with focus on selected days with single-layer cumulus clouds (2005-2016), we include the narrow-FOV ARM Active Remotely Sensed Clouds Locations (ARSCL) and large-FOV Total Sky Imager (TSI) cloud products, the 915-MHz Radar Wind Profiler (RWP) measurements of wind speed and direction, and also high-resolution satellite images from Landsat and the Moderate Resolution Imaging Spectroradiometer (MODIS). We demonstrate that a root-mean-square difference (RMSD) between the 15-min averaged ARSCL cloud fraction (CF) and the 15-min averaged TSI fractional sky cover (FSC) is large (up to 0.3). We also discuss how the horizontal distribution of clouds can modify the obtained large RMSD using a new uniformity metric. The latter utilizes the spatial distribution of the FSC over the 100° FOV TSI images obtained with high temporal resolution (30 sec sampling). We demonstrate that cases with more uniform spatial distribution of FSC show better agreement between the narrow-FOV CF and large-FOV FSC, reducing the RMSD by up to a factor of 2.

ARM Active Remotely Sensed Cloud Locations (ARSCL)↗