Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures.
Abstract not provided.
Misra, Shashank↗
SEARCH · Engineering Papers
Results for “MICROSCOPE”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
A comparative study on shock compression of nanocrystalline Al and Cu: Shock profiles and microscopic views of plasticity
Shock compressions of nanocrystalline (nc) metals Al and Cu with the same grain size and texture are studied by using molecular dynamics simulations. Results have revealed that the shock front of both Al and Cu can be divided into three stages: elastic, grain-boundary-mediated, and dislocation-mediated plastic deformation. The transition planes among these three stages are proven to be non-planar by two-dimensional shock response analysis, including local stress, shear, temperature, and atom configuration. The difference between shocked Al and Cu is that the rise rate of the elastic stage of Cu is slightly higher than that of Al, and that the shock-front width of Al is wider than Cu at the same loading conditions. For the plastic stage, the dislocation density of shocked Al is lower than Cu, and the contribution of grain-boundary-mediated plasticity to shock front and strain for nc Al is more pronounced than for nc Cu. These results are explained through intrinsic material properties and atomistic analysis of the plastic process. In the case of the shocked Al sample, partial dislocations, perfect dislocations, and twins are observed, but few evidence of perfect dislocations and twins are observed in the shocked Cu.
36 MATERIALS SCIENCE↗
Golden rule kinetics of transfer reactions in condensed phase: The microscopic model of electron transfer reactions in disordered solid matrices
The algorithm for a theoretical calculation of transfer reaction rates for light quantum particles (i.e., the electron and H-atom transfers) in non-polar solid matrices is formulated and justified. The mechanism postulated involves a local mode (an either intra- or inter-molecular one) serving as a mediator which accomplishes the energy exchange between the reacting high-frequency quantum mode and the phonon modes belonging to the environment. This approach uses as a background the Fermi golden rule beyond the usually applied spin-boson approximation. The dynamical treatment rests on the one-dimensional version of the standard quantum relaxation equation for the reduced density matrix, which describes the frequency fluctuation spectrum for the local mode under consideration. The temperature dependence of a reaction rate is controlled by the dimensionless parameter ξ{sub 0}=ℏω{sub 0}/k{sub B}T where ω{sub 0} is the frequency of the local mode and T is the temperature. The realization of the computational scheme is different for the high/intermediate (ξ{sub 0} < 1 − 3) and for low (ξ{sub 0}≫ 1) temperature ranges. For the first (quasi-classical) kinetic regime, the Redfield approximation to the solution of the relaxation equation proved to be sufficient and efficient in practical applications. The study of the essentially quantum-mechanical low-temperature kinetic regime in its asymptotic limit requires the implementation of the exact relaxation equation. The coherent mechanism providing a non-vanishing reaction rate has been revealed when T→ 0. An accurate computational methodology for the cross-over kinetic regime needs a further elaboration. The original model of the hopping mechanism for electronic conduction in photosensitive organic materials is considered, based on the above techniques. The electron transfer (ET) in active centers of such systems proceeds via local intra- and intermolecular modes. The active modes, as a rule, operate beyond the kinetic regimes, which are usually postulated in the existing theories of the ET. Our alternative dynamic ET model for local modes immersed in the continuum harmonic medium is formulated for both classical and quantum regimes, and accounts explicitly for the mode/medium interaction. The kinetics of the energy exchange between the local ET subsystem and the surrounding environment essentially determine the total ET rate. The efficient computer code for rate computations is elaborated on. The computations are available for a wide range of system parameters, such as the temperature, external field, local mode frequency, and characteristics of mode/medium interaction. The relation of the present approach to the Marcus ET theory and to the quantum-statistical reaction rate theory [V. G. Levich and R. R. Dogonadze, Dokl. Akad. Nauk SSSR, Ser. Fiz. Khim. 124, 213 (1959); J. Ulstrup, Charge Transfer in Condensed Media (Springer, Berlin, 1979); M. Bixon and J. Jortner, Adv. Chem. Phys. 106, 35 (1999)] underlying it is discussed and illustrated by the results of computations for practically important target systems.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
The relationship between local liquid density and force applied on a tip of atomic force microscope: A theoretical analysis for simple liquids
The density of a liquid is not uniform when placed on a solid. The structured liquid pushes or pulls a probe employed in atomic force microscopy, as demonstrated in a number of experimental studies. In the present study, the relation between the force on a probe and the local density of a liquid is derived based on the statistical mechanics of simple liquids. When the probe is identical to a solvent molecule, the strength of the force is shown to be proportional to the vertical gradient of ln(ρ{sub DS}) with the local liquid's density on a solid surface being ρ{sub DS}. The intrinsic liquid's density on a solid is numerically calculated and compared with the density reconstructed from the force on a probe that is identical or not identical to the solvent molecule.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Note: Mechanical etching of atomic force microscope tip and microsphere attachment for thermal radiation scattering enhancement
This Note describes a mechanical etching technique which can be used to prepare silicon tips used in atomic force microscopy apparatus. For such devices, dedicated tips with specific shapes are now commonly used to probe surfaces. Yet, the control of the tip morphology where characteristic scales are lower than 1 μm remains a real challenge. Here, we detail a controlled etching process of AFM probes apex allowing micrometer-sized sphere attachment. The technique used and influent parameters are discussed and SEM images of the achieved tips are given. Deceptive problems and drawbacks that might occur during the process are also covered.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Microscopic origin of the π states in epitaxial silicene
We investigated the electronic properties of epitaxial silicene on ZrB{sub 2}(0001) thin film grown on Si(111) by means of low-temperature scanning tunneling spectroscopy and density functional theory calculations. The position of silicon atoms and thus, the localization of the valence and conduction states were deducted from the comparison of the spectra and the computed local density of states. We point out the strong contribution of p{sub z} orbitals of specific atoms to those states which indicates the π character of the conduction and valence bands. A clear correlation between hybridization of the orbitals of the Si atoms and the buckling was evidenced.
36 MATERIALS SCIENCE↗
Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces
An epitaxial silicon-oxide monolayer of chemical composition of Si{sub 2}O{sub 3} (the Si{sub 2}O{sub 3} layer) formed on hexagonal SiC(0001{sup ¯}) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si{sub 2}O{sub 3} layer are found to be missing SiO{sub n} (n = 1, 2, 3) molecules. The band gap of the Si{sub 2}O{sub 3} layer obtained by point tunneling spectroscopy is 5.5±0.5 eV, exhibiting considerable narrowing from that of bulk SiO{sub 2}, 8.9 eV. It is proposed that the Si{sub 2}O{sub 3} layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Photothermal excitation setup for a modified commercial atomic force microscope
High-resolution imaging in liquids using frequency modulation atomic force microscopy is known to suffer from additional peaks in the resonance spectrum that are unrelated to the cantilever resonance. These unwanted peaks are caused by acoustic modes of the liquid and the setup arising from the indirect oscillation excitation by a piezoelectric transducer. Photothermal excitation has been identified as a suitable method for exciting the cantilever in a direct manner. Here, we present a simple design for implementing photothermal excitation in a modified Multimode scan head from Bruker. Our approach is based on adding a few components only to keep the modifications as simple as possible and to maintain the low noise level of the original setup with a typical deflection noise density of about 15 fm/√(Hz) measured in aqueous solution. The success of the modification is illustrated by a comparison of the resonance spectra obtained with piezoelectric and photothermal excitation. The performance of the systems is demonstrated by presenting high-resolution images on bare calcite in liquid as well as organic adsorbates (Alizarin Red S) on calcite with simultaneous atomic resolution of the underlying calcite substrate.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices
We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electron microscopic evidence for a tribologically induced phase transformation as the origin of wear in diamond
Tribological testing of a coarse-grained diamond layer, deposited by plasma-enhanced chemical vapor deposition, was performed on a ring-on-ring tribometer with a diamond counterpart. The origin of the wear of diamond and of the low friction coefficient of 0.15 was studied by analyzing the microstructure of worn and unworn regions by transmission and scanning electron microscopy. In the worn regions, the formation of an amorphous carbon layer with a thickness below 100 nm is observed. Electron energy loss spectroscopy of the C-K ionization edge reveals the transition from sp{sup 3}-hybridized C-atoms in crystalline diamond to a high fraction of sp{sup 2}-hybridized C-atoms in the tribo-induced amorphous C-layer within a transition region of less than 5 nm thickness. The mechanically induced phase transformation from diamond to the amorphous phase is found to be highly anisotropic which is clearly seen at a grain boundary, where the thickness of the amorphous layer above the two differently oriented grains abruptly changes.
36 MATERIALS SCIENCE↗
Ergodicity reflected in macroscopic and microscopic field-dependent behavior of BNT-based relaxors
The effect of heterovalent B-site doping on ergodicity of relaxor ferroelectrics is studied using (1 − y)(0.81Bi{sub 1/2}Na{sub 1/2}TiO{sub 3}-0.19Bi{sub 1/2}K{sub 1/2}TiO{sub 3})-yBiZn{sub 1/2}Ti{sub 1/2}O{sub 3} (BNT-BKT-BZT) with y = (0.02;0.03;0.04) as a model system. Both the large- and small-signal parameters are studied as a function of electric field. The crystal structure is assessed by means of neutron diffraction in the initial state and after exposure to a high electric field. In order to measure ferroelastic domain textures, diffraction patterns of the poled samples are collected as a function of sample rotation angle. Piezoresponse force microscopy (PFM) is employed to probe the microstructure for polar regions at a nanoscopic scale. For low electric fields E < 2 kV·mm{sup −1}, large- and small-signal constitutive behavior do not change with composition. At high electric fields, however, drastic differences are observed due to a field-induced phase transition into a long-range ordered state. It is hypothesized that increasing BZT content decreases the degree of non-ergodicity; thus, the formation of long-range order is impeded. It is suggested that frozen and dynamic polar nano regions exist to a different degree, depending on the BZT content. This image is supported by PFM measurements. Moreover, PFM measurements suggest that the relaxation mechanism after removal of the bias field is influenced by surface charges.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Study of microscopic origin of segregation for Fe{sub x}Cu{sub 1−x} and Cu{sub x}Co{sub 1−x} liquid binary alloys
The segregating properties for Fe{sub x}Cu{sub 1−x} and Cu{sub x}Co{sub 1−x} liquid-liquid binary alloys are investigated theoretically. Here, the free energy of mixing is calculated by using the electronic theory of metals within the framework of the perturbative approach. The calculated results such as the critical temperature and the critical concentration agree well with the available experimental data. Most importantly, the present work confirms our previous finding [M. Mehedi Faruk and G. M. Bhuiyan, Physica B 422, 56 (2013)] that the volume dependent part of the energy of mixing is mostly responsible for segregation of metallic alloys.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Effects of alloy disorder and confinement on phonon modes and Raman scattering in Si{sub x}Ge{sub 1−x} nanocrystals: A microscopic modeling
Confinement and alloy disorder effects on the lattice dynamics and Raman scattering in Si{sub 1−x}Ge{sub x} nanocrystals (NCs) are investigated numerically employing two different empirical inter-atomic potentials. Relaxed NCs of different compositions (x) were built using the Molecular Dynamics method and applying rigid boundary conditions mimicking the effect of surrounding matrix. The resulting variation of bond lengths with x was checked against Vegard's law and the NC phonon modes were calculated using the same inter-atomic potential. The localization of the principal Raman-active (Si-Si, Si-Ge, and Ge-Ge) modes is investigated by analysing representative eigenvectors and their inverse participation ratio. The dependence of the position and intensity of these modes upon x and NC size is presented and compared to previous calculated results and available experimental data. In particular, it is argued that the composition dependence of the intensity of the Si-Ge and Ge-Ge modes does not follow the fraction of the corresponding nearest-neighbour bonds as it was suggested by some authors. Possible effects of alloy segregation are considered by comparing the calculated properties of random and clustered Si{sub x}Ge{sub 1−x} NCs. It is found that the Si-Si mode and Ge-Ge mode are enhanced and blue-shifted (by several cm{sup −1}for the Si-Si mode), while the intensity of the Si-Ge Raman mode is strongly suppressed by clustering.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Total energy study of the microscopic structure and electronic properties of tetragonal perovskite SrTiO{sub 3}
To study the structural and electronic properties of cubic perovskite SrTiO{sub 3} and its stress-induced tetragonal phase, we have performed total energy calculations and studied the effect of oxygen vacancies on the electronic properties of tetragonal perovskite SrTiO{sub 3}. The method used was the relativistic full-potential linearized augmented plane wave (FLAPW) method. To obtain the geometry that minimizes the total energy, we relaxed the internal atomic sites of the tetragonal cell. As a result of this procedure, we have found that the titanium atoms move toward the plane of the vacancy by 0.03 Å, and the apical oxygen atoms move to the same plane by approximately 0.14 Å. These results are discussed in comparison with experimental data.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Spatial dependence of polycrystalline FTO’s conductance analyzed by conductive atomic force microscope (C-AFM)
Fluorine-doped Tin oxide (FTO) is a highly transparent, electrically conductive polycrystalline material frequently used as an electrode in organic solar cells and optical-electronic devices [1–2]. In this work a spatial analysis of the conductive behavior of FTO was carried out by Conductive-mode Atomic Force Microscopy (C-AFM). Rare highly oriented grains sample give us an opportunity to analyze the top portion of polycrystalline FTO and compare with the border one. It is shown that the current flow essentially takes place through the polycrystalline edge at grain boundaries.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Parallel parametric amplification of coherently excited propagating spin waves in a microscopic Ni{sub 81}Fe{sub 19} waveguide
We present parallel parametric amplification of coherently excited, propagating spin waves in a microstructured magnonic Ni{sub 81}Fe{sub 19} waveguide. Amplification is achieved by the pumping field generated by a microwave current flowing through a Cu micro-stripline underneath the waveguide. By employing microfocussed Brillouin light scattering spectroscopy, we investigate the spatial decay of the propagating spin waves and their amplification by means of parallel pumping. We analyze the dependence of the intensity of the amplified spin waves on the spin-wave excitation power, pumping power, and pumping duration, revealing the most efficient working point for a noise-free amplification. This paves the way for a frequency selective amplification of spin waves in microstructured magnonic circuits.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗