Gas feeding molecular phosphorous ion source for semiconductor implanters
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43 PARTICLE ACCELERATORS↗
SEARCH · Engineering Papers
Results for “ION IMPLANTATION”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Concurrent In-situ Self-ion Irradiation and He Implantation of Nanocrystalline Nickel.
Abstract not provided.
Muntifering, Brittany↗
MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL.
Abstract not provided.
Muntifering, Brittany↗
CONCURRENT AND SEQUENTIAL HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL.
Abstract not provided.
Muntifering, Brittany↗
Concurrent and Sequential Hydrogen Isotope Implantation and Self-Ion Irradiation in Nickel.
Abstract not provided.
Muntifering, Brittany↗
Depth profiling and standardization from the back side of a sample for accurate analyses: Emphasis on quantifying low‐fluence, shallow implants in diamond‐like carbon
Rationale Back‐side thinning of wafers is used to eliminate issues with transient sputtering when analyzing near‐surface element distributions. Precise and accurate calibrated implants are created by including a standard reference material during the implantation. Combining these methods allows accurate analysis of low‐fluence, shallow features even if matrix effects are a concern. Methods Implanted Na (<2.0 × 10 11 ions/cm 2 , peaking <50 nm) in diamond‐like carbon (DLC) film on silicon (solar wind returned by NASA's Genesis mission) was prepared for measurement as follows. Implanted surfaces of samples were epoxied to wafers and back‐side‐thinned using physical or chemical methods. Thinned samples were then implanted with reference ions for accurate quantification of the solar wind implant. Analyses used a CAMECA IMS 7f‐GEO SIMS in depth‐profiling mode. Results Back‐side‐implanted reference ions reduced the need to change sample mounts or stage position and could be spatially separated from the solar wind implant even when measuring monoisotopic ions. Matrix effects in DLC were mitigated and the need to find an identical piece of DLC for a reference implant was eliminated. Accuracy was only limited by the back‐side technique itself. Conclusions Combining back‐side depth profiling with back‐side‐implanted internal standards aides quantification of shallow mono‐ and polyisotopic implants. This technique helps mitigate matrix effects and keeps measurement conditions consistent. Depth profile acquisition times are longer, but if sample matrices are homogeneous, procedural changes can decrease measurement times.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Relationship between wave energy and free energy from pickup ions in the Comet Halley environment
The free energy available from the implanted heavy ion population at Comet Halley is calculated by assuming that the initial unstable velocity space ring distribution of the ions evolves toward a bispherical shell. Ultimately this free energy adds to the turbulence in the solar wind. Upstream and downstream free energies are obtained separately for the conditions observed along the Giotto spacecraft trajectory. The results indicate that the waves are mostly upstream propagating in the solar wind frame. The total free energy density always exceeds the measured wave energy density because, as expected in the nonlinear process of ion scattering, the available energy is not all immediately released. An estimate of the amount which has been released can be obtained from the measured oxygen ion distributions and again it exceeds that observed. The theoretical analysis is extended to calculate the k spectrum of the cometary-ion-generated turbulence.
Huddleston, D. E.↗
Changes in the structure and wear resistance of the surface layer of copper under treatment by nitrogen ion beams
The structural-phase state of the treated sample surface was investigated by TEM. It was shown by the TEM and VIMS method that the improvement of tribological properties of the copper samples can be associated with an increase of relaxation ability due to a significant increase of the nitrogen concentration in it, which is accompanied by the refinement of fcc-Cu main phase grain structure and the formation of nanopores or gas bubbles in the ion-modified surface layer. A high-dose implantation of nitrogen ions and copper samples increases the wear resistance in 1.5-4.5 times together with a counterbody from the same material in the argon environment. The microhardness of the copper samples also increases.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation
Low-energy (E = 30 keV) Ag{sup +} ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10{sup 15} to 1.5 × 10{sup 17} ions cm{sup –2} and an ion beam current density varying from 2 to 15 μA/cm{sup 2}. The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Si experiences amorphization. It has been found that when the implantation dose is in excess of the threshold value (~3.1 × 10{sup 15} ions cm{sup –2}), Ag nanoparticles uniformly distributed over the Si surface arise in the irradiated Si layer. At a dose exceeding 10{sup 17} ions cm{sup –2}, a porous Si structure is observed. In this case, the Ag nanoparticle size distribution becomes bimodal with coarse particles localized at the walls of Si pores.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Advances in methods to obtain and characterise room temperature magnetic ZnO
We report the existence of magnetic order at room temperature in Li-doped ZnO microwires after low energy H{sup +} implantation. The microwires with diameters between 0.3 and 10 μm were prepared by a carbothermal process. We combine spectroscopy techniques to elucidate the influence of the electronic structure and local environment of Zn, O, and Li and their vacancies on the magnetic response. Ferromagnetism at room temperature is obtained only after implanting H{sup +} in Li-doped ZnO. The overall results indicate that low-energy proton implantation is an effective method to produce the necessary amount of stable Zn vacancies near the Li ions to trigger the magnetic order.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
The structural modification and magnetism of many-layer epitaxial graphene implanted with low-energy light ions
Modifying the properties of graphene has gained wide interest for a plethora of potential applications, including spintronics. One approach has demonstrated that proton irradiation can induce ferromagnetism in graphene as well as in graphite. However, little is known about how the protons interact with graphene, the mechanism that creates the ferromagnetism, or whether the protons remain in the graphene. Here we report an investigation, broadly relevant to graphitic carbon, using low-energy (360–2000 eV) ions of hydrogen, deuterium, and helium implanted into multilayer epitaxial graphene. Complementary x-ray and neutron reflectivity demonstrate that essentially all of the implanted hydrogen remains chemisorbed in graphene. In situ x-ray diffraction reveals significantly different rates of interlayer expansion of the multilayer graphene. Analysis of these data demonstrates that the interlayer expansion arises entirely from the interstitials created by the ions and not from hydrogen that remains in the graphene. The results also establish a quantitative measure of the layer expansion due to carbon interstitials. Magnetometry and x-ray diffraction studies show that the magnetic moment relates to the amount of interstitial carbon rather than the amount of hydrogen, demonstrating that the induced room-temperature ferromagnetism arises directly from the disrupted bonding of the carbon lattice.
36 MATERIALS SCIENCE↗
Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties
Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals
We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.
36 MATERIALS SCIENCE↗
Radiation damage study of POCO ZXF-5Q graphite for neutrino production targets using 4.5 MeV helium ions
To address the challenges of increased beam power and target survivability associated with next-generation particle production beam lines, high dose, high-energy proton beam conditions are simulated using irradiation from low-energy ion beams. A low-energy ion irradiation study of POCO ZXF-5Q graphite under conditions similar to those of the NuMI NT-02 neutrino production target at the Fermi National Accelerator Laboratory is reported. Helium ion irradiation was performed at 100 ∘ C to a maximum damage level of 0.9 displacements per atom (DPA). Irradiation induced hardening, swelling of the irradiated region, inter-plane lattice expansion, and intraplane lattice contraction with increasing ion fluence was observed using micromechanical (nanoindentation, atomic force microscopy) and electron microscopy (high-resolution imaging, selected area diffraction) characterization. Similar changes were also observed in post irradiation examination of the NT-02 target indicating that ion irradiation can be a valuable tool for estimating radiation damage in proton beam targets. Caution must be exercised though, because the hardening, lattice alteration, and swelling occur to different magnitudes for a given damage level. The observed hardening and embrittlement were greater for ion irradiated graphite. For He ion irradiated samples the lattice spacing changes were smaller at low damage levels (78% less expansion and 71% less contraction at 0.1 DPA) and larger at high damage levels (38% more expansion and 5% more contraction at 0.9 DPA) relative to that observed in the NT-02 target. The magnitude of swelling was 8.5× greater under ion irradiation which is influenced by the differing damage gradients and inclusion of implanted He ions in the region of interest.
43 PARTICLE ACCELERATORS↗
The use of an ion-beam source to alter the surface morphology of biological implant materials
An electron bombardment, ion thruster was used as a neutralized-ion beam sputtering source to texture the surfaces of biological implant materials. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane were obtained.
Weigand, A. J.↗
On the enhancement of Er{sup 3+} diffusion in LiNbO{sub 3} crystals by Er{sup 3+}/Ti{sup 4+} co-diffusion
Highlights: • Enhancement of the diffusion of erbium ions (Er{sup 3+}) in lithium niobate crystals. • Incoherence on published results lead to need for systematic revision of literature. • Further insight into the topic of co-diffusion of Er{sup 3+}/Ti{sup 4+} ions into LiNbO{sub 3}. - Abstract: After carrying out a revision of the literature on the enhancement of Er{sup 3+} diffusion in LiNbO{sub 3} crystals by Er{sup 3+}/Ti{sup 4+} co-diffusion and analyzing our own experimental results, we conclude that no reproducible results were reported, meaning that further research on this subject is necessary.
36 MATERIALS SCIENCE↗
Ion Synthesis: Si–Ge Quantum Dots
We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10{sup 14} to 10{sup 17} cm{sup –2}, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.
36 MATERIALS SCIENCE↗
Ion Implantatiion Improves Bearing-Surface Properties
Selected ions fired into rolling elements to increase resistance to rolling-contact fatique. Mask strips confine implantation to 105 degree arcs on cylindrical surfaces. Specimens kept cool by copper block through which refrigerant is circulated. Implanting nitrogen or titanium ions in metals improves resistance to fatigue, corrosion, and wear without altering bulk properties. Unlike such surface treatments as conventional nitriding, conventional carburizing, and coating, ion implantation is low-temperature process, requires no finishing operations, and produces highly-alloyed surface layer. Implantation process also helps conserve such strategic materials as chromium and cobalt by using them only where needed.
Misra, M. S.↗