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Results for “Hall effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,135 records · Page 63
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

dc electrical conductivity in strongly magnetized plasmas

A generalized Ohm's law is derived to treat strongly magnetized plasmas in which the electron gyrofrequency significantly exceeds the electron plasma frequency. Here, strong magnetization of electrons causes the frictional drag between electrons and ions due to Coulomb collisions to shift, producing an additional transverse resistivity term in the generalized Ohm's law that is perpendicular to both the current ($J$) and the Hall ($JxB$) direction. In the limit of very strong magnetization the parallel resistivity is found to increase by a factor of 3/2, and the perpendicular resistivity by a factor of $\frac{3}{4} \ln (m_i/m_e)$, where $m_i$ and $m_e$ are the ion and electron masses. These results suggest that strong magnetization significantly changes the magnetohydrodynamic evolution of a plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Charge carrier mobility of halide perovskite single crystals for ionizing radiation detection

Halide perovskites have recently emerged as promising semiconductor materials for several applications including solar cells, light-emitting diodes (LEDs), and radiation detectors. The charge carrier transport properties, which could be evaluated by the mobility-lifetime (mu-tau or μ-г) product, serve an important role for the development of halide perovskites for radiation detection applications. In this perspective, we firstly explain the charge transport mechanism and the limiting factors that determine the intrinsic charge carrier mobility in halide perovskite single crystals. Then, we overview the techniques and methods that have been employed for evaluating the charge carrier mobility (for both electrons and holes). Lastly, we discuss the discrepancy between the experimentally determined carrier mobility from the literature for halide perovskite single crystals and a perspective on future developments for carrier mobility enhancement is provided.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Ultrafast valley polarization in bilayer graphene

We study theoretically the interaction of a bilayer graphene with a circularly polarized ultrafast optical pulse of a single oscillation at an oblique incidence. The normal component of the pulse breaks the inversion symmetry of the system and opens up a dynamical bandgap due to which a valley-selective population of the conduction band becomes sensitive to the angle of incident of the pulse. We show that the magnitude of the valley polarization can be controlled by the angle of incidence, the amplitude, and the angle of in-plane polarization of the chiral optical pulse. Subsequently, a sequence of a circularly polarized pulse followed by a linearly polarized femtosecond-long pulse can be used to control and probe the valley polarization created by the preceding pulse. Our protocol provides a favorable platform to design ultrafast all-optical valleytronic information processing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

A high-conductivity two-dimensional (2D) hole gas is the enabler of wide-bandgap p-channel transistors. Compared to commonly used AlN template substrates with high dislocation densities, the recently available single-crystal AlN substrates are promising to boost the speed and power handling capability of p-channel transistors based on GaN/AlN 2D hole gases (2DHGs) thanks to the much lower dislocation densities and the absence of thermal boundary resistance. Using plasma-assisted molecular beam epitaxy, we report the observation of polarization-induced high-density 2DHGs in undoped pseudomorphic GaN/AlN heterostructures on the single-crystal AlN substrates with high structural quality and atomic steps on the surface. The high-density 2DHG persists down to cryogenic temperatures with a record high mobility exceeding 280 cm 2 /V s and a density of 2.2 × 10 13 /cm 2 at 10 K. These results shed light on aspects of improving 2D hole mobilities and indicate significant potential of GaN/AlN 2DHG grown on bulk AlN substrates for future high performance wide-bandgap p-channel transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

In this work, we report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing top and bottom gates, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor v T =1 and v T =2 are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of the density. The v T =1 gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the v T =2 gap to the single particle tunneling energy, Δ SAS , obtained from Schrödinger–Poisson (SP) simulations, evidence for the onset of spontaneous interlayer coherence is observed for a relative filling fraction imbalance smaller than ~50%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Characterization of hollow cathode plasma turbulence using coherent Thomson scattering

Turbulence in hollow cathodes used for space propulsion is believed to play an important role in anomalous electron transport and ion heating. In this work, the implementation of coherent Thomson scattering to identify and characterize MHz-frequency ion acoustic turbulence and kHz-frequency oscillations in the plume of a hollow cathode is achieved. In the presence of a background magnetic field of a Hall thruster, a number of unstable modes are observed. A directive ion acoustic mode propagating predominantly within a restricted angle around the magnetic field is found, exhibiting an energy scaling with wavenumber k of the form k -5.2±0.58 , which differs from the classic Kadomtsev k -3 scaling for unmagnetized conditions. Bi-directional ion acoustic mode fluctuations propagating over a range of angles with respect to the magnetic field have been measured, possibly signifying the existence of a large-amplitude plasma wave, similar to the Buneman instability. Finally, electron density fluctuations in the kHz-frequency range, a possible consequence of drift-driven instabilities in the plane perpendicular to the magnetic field, have also been identified. Furthermore, these results not only are an indication of the diversity of wave types that exist in hollow cathode plumes but also point to the key role played by the presence of, and the configuration of, the magnetic field in their appearance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Experimental and theoretical study of hole scattering in RF sputtered p-type Cu 2 O thin films

One of the key materials of interest for p-type oxide semiconductor thin film electronics is cuprous oxide (Cu 2 O), due to its relatively high hole mobility. Here, in this work, we use experiments, analytical models, and density functional theory calculations to study the scattering mechanisms that determine Hall mobility in two Cu 2 O samples. First, we examine a polycrystalline Cu 2 O thin film deposited by RF magnetron sputtering, and second, a single-crystalline Cu2O bulk substrate. Temperature-dependent Hall measurements indicate that neutral impurity and grain boundary scattering are dominant for the polycrystalline Cu 2 O thin film, while phonon scattering is dominant for single-crystalline Cu 2 O. Our first-principles calculations show that the room-temperature intrinsic hole mobility of Cu 2 O is 106 cm 2 V –1 s –1 , indicating the great promise of the material for p-type electronic devices. This intrinsic mobility is limited by phonon scattering, with the most dominant scattering modes having phonon energies of 88.4 and 17.1 meV. These results indicate that the key pathways to increase the hole mobility in Cu 2 O thin films are by reducing the impurity concentration and by increasing grain size. Our work thus sets the stage for the future development of high performance Cu 2 O-based p-type thin film transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Local Noether theorem for quantum lattice systems and topological invariants of gapped states

Here, we study generalizations of the Berry phase for quantum lattice systems in arbitrary dimensions. For a smooth family of gapped ground states in d dimensions, we define a closed d + 2-form on the parameter space, which generalizes the curvature of the Berry connection. Its cohomology class is a topological invariant of the family. When the family is equivariant under the action of a compact Lie group G, topological invariants take values in the equivariant cohomology of the parameter space. These invariants unify and generalize the Hall conductance and the Thouless pump. A key role in these constructions is played by a certain differential graded Fréchet–Lie algebra attached to any quantum lattice system. As a by-product, we describe ambiguities in charge densities and conserved currents for arbitrary lattice systems with rapidly decaying interactions.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Three-dimensional coupling of electron cyclotron drift instability and ion–ion two stream instability

Electron cyclotron drift instability (ECDI) and ion–ion two stream instability (IITSI) are both kinetic instabilities that can be present in low-temperature, partially magnetized plasmas. The coupling of instabilities in a three-dimensional configuration leads to the existence of more than one unstable roots to the kinetic dispersion relation. In this paper, a generalized method has been developed for numerically evaluating solutions to the three-dimensional dispersion relation for coupled ECDI and IITSI, assuming cold singly and doubly charged ions and a Maxwellian velocity distribution function for the electrons. The present study demonstrates the coupling between ECDI and IITSI that affects the most unstable mode as a function of the wavenumbers in three dimensions and various plasma properties, including the applied electric field, magnetic field, electron temperature, ion velocities, and plasma density. One of the most notable results is that, while the most unstable mode with the largest growth rate is in the direction of the E×B drift in the two-dimensional cases, the most unstable mode for the three-dimensional configuration occurs in the oblique direction between the applied electric field and the E×B drift. Here, this agrees with experimental observations in cross field plasma sources using coherent Thomson scattering.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Low-damage electron beam lithography for nanostructures on Bi 2 Te 3 -class topological insulator thin films

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi 2 Se 3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. In conclusion, although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.

42 ENGINEERING↗
DOE OSTI2023

Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide

Hybrid structures between conventional, s-wave superconductors, and two-dimensional topological insulators (2D TIs) are a promising route to topological superconductivity. Here, we investigate planar Josephson junctions fabricated from hybrid structures that use thin films of cadmium arsenide (Cd3As2) as the 2D TI material. Measurements of superconducting interference patterns in a perpendicular magnetic field are used to extract information about the spatial distribution of the supercurrent. We show that the interference patterns are distinctly different in junctions with and without mesa-isolation. In mesa-defined junctions, the bulk of the 2D TI appears to be almost completely shunted by supercurrent flowing along the edges, whereas the supercurrent is much more uniform across the junction when the Cd3As2 film extends beyond the device. We discuss the possible origins of the observed behaviors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

The role of magnetic anisotropy in the magnetoresistance of Cr 2 O 3 /Al 2 O 3 thin film antiferromagnets

The magnetic states of antiferromagnetic insulating thin films are a promising medium for information storage, but characterization of these states has proven to be challenging. One approach is via magnetotransport measurements in an adjacent heavy metal layer. To this end, we synthesized and characterized a series of Cr 2 O 3 films and bilayers on Al 2 O 3 substrates with three different orientations: m-plane, a-plane, and c-plane. X-ray diffraction results demonstrated orientation control of the Cr 2 O 3 thin film, with m-plane films displaying a higher degree of mosaic spread than the a- and c-plane films. Reciprocal space maps showed that the films are mostly relaxed, although there was a small and different degree of strain in each orientation. The m-plane films were under 2% compressive strain, the a-plane film was under 0.5% compressive strain, and the c-plane film was completely relaxed to bulk values. To probe the magnetic state of the films, we measured the angular dependent magnetoresistance of Cr 2 O 3 /Pt bilayers for each orientation. We found a nontrivial temperature dependence of the sign of the magnetoresistance, pointing to the complex interplay between the exchange and anisotropy energies that vary with orientation. We propose that strain and mosaic spread may contribute to a difference in magnetic anisotropies among the samples and the resulting temperature dependence of the magnetoresistance. This work demonstrates the importance of considering the competition between antiferromagnetic exchange and magnetic anisotropy when storing information in the spin state of an antiferromagnetic insulator.

42 ENGINEERING↗
DOE OSTI2024

Electron mobility of SnO 2 from first principles

The transparent conducting oxide SnO 2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO 2 from first principles to examine the temperature and doping concentration dependence and to elucidate the scattering mechanisms that limit transport. We include both electron–phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. Furthermore, we find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 10 18 cm −3 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Hall MHD waves: A fundamental departure from their MHD counterparts

It is demonstrated through a succinct derivation as to how the linear waves in Hall magnetohydrodynamics (HMHD) constitute a fundamental departure from the standard MHD waves. Apart from modifying the conventional MHD spectrum, the Hall current induces a distinct and new branch consisting of purely circularly polarized waves that may become the representative shear waves.

Astrophysics↗
DOE OSTI2024

Validation of galvanomagnetic and thermomagnetic transport measurements using Standard Reference Material 3451

In the “method of four coefficients,” electrical resistivity (ρ), Seebeck coefficient (S), Hall coefficient (RH), and Nernst coefficient (Q) of a material are measured and typically fit or modeled with theoretical expressions based on Boltzmann transport theory to glean experimental insights into features of electronic structure and/or charge carrier scattering mechanisms in materials. Although well-defined and readily available reference materials exist for validating measurements of ρ and S, none currently exists for R H or Q. We show that measurements of all four transport coefficients—ρ, S, R H , and Q—can be validated using a single reference sample, namely, the low-temperature Seebeck coefficient Standard Reference Material® (SRM) 3451 (composition Bi 2 Te 3+x ) available from the National Institute for Standards and Technology (NIST) without the need for inter-laboratory sample exchange. Here, R H and Q data for NIST SRM 3451 reported here for the temperature range 80–400 K complement the data already available for ρ and S and will therefore be of interest to researchers desiring to validate new or existing galvanomagnetic and thermomagnetic transport properties measurement systems.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi (111) films in the thickness range of 5–32 nm deposited directly on GaAs (111) substrates, without a buffer layer. The quality of Bi films is found to depend on conditions for substrate treatment using Ar + ion-milling and annealing. Substrates milled at low ion beam currents display poor surface reconstruction after annealing, which hinders the growth of high-quality films. In contrast, substrates milled under optimized conditions led to reconstructed surfaces upon annealing, resulting in epitaxial Bi films with predominantly single-domain orientation. Although epitaxial films formed in both cases, transport measurements indicated significantly higher conductivity for films grown on optimally treated substrates. Measurements at low temperatures suggest that the transport properties are dominated by a surface state with high mobility electrons. Magneto-transport measurements suggest that conductivity and mobility improve progressively with increasing film thickness. For the thinnest 5 nm film, a hole-like state emerges, presumably as the electron-like state is gapped out. These results provide a robust methodology for growing high-quality epitaxial Bi films on GaAs (111) and offer insights into their unique transport properties and our ability to tune them.

Atomic force microscopy↗
DOE OSTI2021

Prediction of unconventional magnetism in doped FeSb 2

Significance For many decades, it has been commonly believed that all electronic states of a collinear antiferromagnet (AF) are spin-degenerate, unless the underlying crystal structure lacks centrosymmetry and has spin–orbit coupling. This has been essentially definitional for antiferromagnetism and is widely used experimentally to distinguish ferromagnets from AFs. Recently, it was demonstrated that a new class of magnets, possessing antiferromagnetic order and without net magnetization but showing a typical ferromagnetic response in many aspects, is possible. We predict that F e S b 2 , which is well known but poorly understood magnetically, is an incipient unconventional magnet of this type and can be pushed to become one by Co or Cr doping. Moreover, the calculated magnetic anisotropy is favorable for exhibiting various anomalous properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Phase diagram of superconductivity in the integer quantum Hall regime

An interplay between pairing and topological orders has been predicted to give rise to superconducting states supporting exotic emergent particles, such as Majorana particles obeying non-Abelian braid statistics. We consider a system of spin polarized electrons on a Hofstadter lattice with nearest-neighbor attractive interaction and solve the mean-field Bogoliubov–de Gennes equations in a self-consistent fashion, leading to gauge-invariant observables and a rich phase diagram as a function of the chemical potential, the magnetic field, and the interaction. As the strength of the attractive interaction is increased, the system first makes a transition from a quantum Hall phase to a skyrmion lattice phase that is fully gapped in the bulk but has topological chiral edge current, characterizing a topologically nontrivial state. This is followed by a vortex phase in which the vortices carrying Majorana modes form a lattice; the spectrum contains a low-energy Majorana band arising from the coupling between neighboring vortex-core Majorana modes but does not have chiral edge currents. For some parameters, a dimer vortex lattice occurs with no Majorana band. The experimental feasibility and the observable consequences of skyrmions as well as Majorana modes are indicated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗