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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,135 records · Page 63
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Ordering in CuAu

Rapidly quenched CuAu ordered state development on low temperature annealing, presenting Young modulus variation as function of heat treatment time

Brotzen, F. R.↗
NASA NTRS1970

Generation of long time creep data on refractory alloys at elevated temperatures

Creep tests were conducted on two tantalum alloys (ASTAR 811C and T-111 alloy), on a molybdenum alloy (TZM), and on CVD tungsten. The T-111 alloy 1% creep life data have been subjected to Manson's station function analysis, and the progress on this analysis is described. In another test program, the behavior of T-111 alloy with continuously varying temperatures and stresses has been studied. The results indicated that the previously described analysis predicts the observed creep behavior with reasonable accuracy. In addition to the T-111 test program, conventional 1% creep life data have been obtained for ASTAR 811C alloy. Previously observed effects of heat treatment on the creep strength of this material have been discussed and a model involving carbide strengthening primarily at the grain boundaries, rather than in a classical dispersion hardening mechanism, has been proposed to explain the observed results.

Sheffler, K. D.↗
NASA NTRS1971

Analog tree-organized multiplexer

An analog tree-organized multiplexer (ATOM) which is intended for use in the telemetry system of an interplanetary spacecraft is designed. The ATOM will be fabricated by a monolithic, dielectric isolation process, and will contain silicon junction field effect transistors (JFET) as the active elements. The effect of the radiation environment on the performance of the ATOM is analyzed. The result indicates that the expected radiation environment will cause only minor changes in the preradiation characteristics of ATOM. The JFET in the ATOM is designed to meet the electrical requirements when fabricated by either the double poly-dielectric isolation process or the raised dielectric isolation process. The effect of the heat treatment required for the dielectric isolation process on the diffusion profile of the JFET is described. The layout of the ATOM circuit for fabrication by either the double poly or raised dielectric isolation process is also given.

Crabbe, J. S.↗