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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,135 records · Page 63
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Fabrication of transparent cellulose acetate/graphene oxide nanocomposite film for UV shielding

In this work, we have fabricated transparent cellulose acetate/graphene oxide nanocomposite (CAGONC) films for ultraviolet radiations (UVR) shielding. Graphene oxide (GO) was synthesized by modified Hummer’s method and CAGONC films were fabricated by solvent casting method. The films were analyzed using characterization techniques like x-ray diffraction (XRD), energy dispersive x-ray (EDX) equipped scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy and ultra-violet visible (UV-VIS) spectroscopy. Four films were prepared by varying the wt% of GO (0.1wt%, 0.2wt% and 0.3wt%) with respect to cellulose acetate (CA). UV-vis measurements exhibit optical transparency in the range of 76-99% for visible light while ultra-violet radiation was substantially shielded.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Dwindling the resistance value of PEDOT:PSS – coated on fabric yarns

Herein we describe by dip coating method to transform typical fabric yarn to conductive fiber. Different types of yarns have been used to coat from a known conductive polymer, Poly (3,4ethylenedioxythiophene) Poly (styrene sulfonic acid). We have optimized the method to have lesser resistance of the conductive yarns. The minimum resistance achieved has a value of 77 Ω/cm. This value is not high as metals but could be comparable to that of metal oxides or semiconducting materials. However, flexibility of yarns and feeling of fabric combining with the conductivity developed in this process is suitable for wearable electronics and also as gas sensors, electromagnetic shielding.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Fabricating Ohmic contact on Nb-doped SrTiO{sub 3} surface in nanoscale

Fabricating reliable nano-Ohmic contact on wide gap semiconductors is an important yet difficult step in oxide nanoelectronics. We fabricated Ohmic contact on the n-type wide gap oxide Nb-doped SrTiO{sub 3} in nanoscale by mechanically scratching the surface using an atomic force microscopy tip. Although contacted to high work function metal, the scratched area exhibits nearly linear IV behavior with low contact resistance, which maintains for hours in vacuum. In contrast, the unscratched area shows Fowler–Nordheim tunneling dominated Schottky rectifying behavior with high contact resistance. It was found that the Ohmic conductivity in the scratched area was drastically suppressed by oxygen gas indicating the oxygen vacancy origin of the Ohmic behavior. The surface oxygen vacancy induced barrier width reduction was proposed to explain the phenomena. The nanoscale approach is also applicable to macroscopic devices and has potential application in all-oxide devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

The effects of composition and sintering temperature on the silica foam fabricated by slurry method

Reticulated ceramic or open pore ceramic foam is a well-known material which exhibits extremely high porosities, with a significant degree of interconnectivity that makes them desirable in a wide range of applications. There were broad types of ceramic foam fabrication method such as polymeric sponge method, direct foaming, and starch consolidation. In this study, the slurry method has been chosen to fabricate Silica (SiO{sub 2}) foam. In this process, Polyurethane (PU) foam template was dipped into ceramic slurry and followed by drying and sintering to obtain foam which contains porosity in the range of 50% to 70%. The compositions of SiO{sub 2} were varied starting from 55 wt.%, 60 wt.%, 65 wt.% and 70 wt.%. The samples of SiO{sub 2} that have been dipped and dried were sintered at 900°C, 1000°C, 1100°C, and 1250°C. The sintered SiO{sub 2} ceramic foam samples were characterized to observe their morphology, and physical properties. Thus, the microstructure of the SiO{sub 2} ceramic foams samples was examined by Scanning Electron Microscopy (SEM), and Electron Dispersive Spectroscopy (EDS). Meanwhile, the physical properties of the SiO{sub 2} ceramic foam samples such as the total porosity (%) and bulk density were determined using Archimedes method. It was found that the density of ceramic foam produced was in the range of 0.25 g/cm{sup 3} up to 0.75 g/cm{sup 3}, whereas the level of porosity percentage was in the range of 61.81% to 82.18% with the size of open pore or window cells were in between 141 µm up to 626 µm.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Photocatalytic and photoelectrochemical performance of Ta{sub 3}N{sub 5} microcolumn films fabricated using facile reactive sputtering

This paper presents the photocatalytic and photoelectrochemical (PEC) properties of Ta{sub 3}N{sub 5} microcolumn films. The highlights include (1) overcoming the fundamental barrier of standard reactive sputtering for fabricating microcolumns; (2) preventing unnecessary complexity from complicating facile sputtering; (3) an alternative but effective approach for fabricating Ta{sub 3}N{sub 5} without using caustic NH{sub 3} gases; (4) investigating morphology tuning for favorable photocatalysis and PEC reactions; and (5) elucidating the relationships of the structures, morphologies, and properties of Ta{sub 3}N{sub 5} microcolumns. High-resolution transmission electron microscopy and selective-area electron diffraction verified the polycrystallinity of Ta{sub 3}N{sub 5} microcolumns, of which the elemental compositions and stoichiometry were measured using electron-probe energy dispersive spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The corresponding band gap was determined to be approximately 2.1 eV. The sample exhibited a superior photodegradation capability; the photodegradation rate constant k was determined to be approximately 1.4 times higher than that of P25 under UV irradiation. A photocatalytic and PEC cycling test indicated the photodegradation reusability and photostability of the Ta{sub 3}N{sub 5} microcolumns. The incident photon-to-current efficiency performance reached 6%, suggesting that these microcolumns hold potential for application in PEC devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Continuous roll-to-roll fabrication of organic photovoltaic cells via interconnected high-vacuum and low-pressure organic vapor phase deposition systems

We demonstrate continuous roll-to-roll (R2R) fabrication of single junction and tandem organic photovoltaic (OPV) cells on flexible plastic substrates employing a system that integrates organic deposition by high vacuum thermal evaporation (VTE) and low pressure organic vapor phase deposition (OVPD). By moving the substrate from chamber to chamber and then depositing films on stationary substrates, we achieve power conversion efficiencies of PCE = 8.6 ± 0.3% and 8.9 ± 0.2% for the single junction and tandem cells, respectively. Single junction OPVs are also fabricated on a continuously translating substrate at 0.3 cm/s, to achieve PCE = 8.5 ± 0.2%. Thin films grown on translating substrates by OVPD show <3% thickness non-uniformity and 0.66 nm root mean square surface roughness, similar to that obtained by VTE. Our results suggest that R2R film deposition comprising multiple vapor deposition technologies is a promising method for rapid speed and continuous manufacturing of high quality, small molecular weight organic electronic materials.

42 ENGINEERING↗
DOE OSTI2019

Characterization of large-volume Frisch grid detector fabricated from as-grown CdZnTeSe

CdZnTe (CZT) has been under continuous development as a room-temperature radiation detector for the past 2-3 decades. Due to its intrinsic defects, such as a high concentration sub-grain boundary network, it has been very challenging to consistently produce high-quality CZT detectors with high yield, particularly for detector volumes exceeding a few cm 3 . In this paper, we report characterization of a relatively large-volume Frisch-grid detector (dimensions: 11x10.8x19.4 mm 3 ) fabricated from a new material Cd 0.9 Zn 0.1 Te 0.985 Se 0.015 . Furthermore, the detector was fabricated from an as-grown ingot with a two-inch diameter grown by the Traveling Heater Method (THM). The detector sample was evaluated by infrared (IR) transmission microscopy to study the presence of Te inclusions. X-ray topography using a synchrotron light source was deployed to measure the presence of sub-grain boundaries and their networks. Finally, the detector performance was measured for an optimized Frisch-grid length to extract the best energy resolution at room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm 2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm -2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 10 14 cm -3 , implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm 2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variation of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z 1/2 and EH 6/7 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Fabrication of single-crystalline YFeO3 films with large antiferromagnetic domains

The antiferromagnetic orthoferrite YFeO3 possesses fascinating magnetic properties for spintronics, such as terahertz spin dynamics, ultrafast domain wall motion, and long magnon decay length. YFeO3 belongs to a special family of antiferromagnets that show an unusually strong non-trivial Kerr response due to its weak ferromagnetism. The highly stable antiferromagnetic domains without any spontaneous spin rotation transitions below the 645 K Néel temperature may be useful for nanoscale device applications. We report the successful fabrication of high-quality twinning-free (110)-oriented YFeO3 films by pulsed laser deposition. Detailed structural and magnetic characterization revealed that the crystal structure and magnetic properties of the YFeO3 films are comparable to bulk single crystals. We show that the spin rotation under high magnetic fields follows the two-sublattice approximation model. The film surface is atomically flat with step-terrace surface morphology. A longitudinal magneto-optic Kerr (MOKE) rotation of 10 mdeg was observed at room temperature, which is consistent with earlier reports on bulk single crystals. The in-plane anisotropy of the Kerr response corresponds to the obtained magnetic anisotropy from the SQUID measurement. The large MOKE signal enables the imaging of antiferromagnetic domains and their reversal. The domain size was found to be larger than 100 μm. These high-quality YFeO3 thin films facilitate the fabrication of antiferromagnetic spintronic devices and provide a convenient platform for studying various spin-related phenomena in thin films and at interfaces.

Physics↗
DOE OSTI2024

Effect of fabrication processes on BaTiO 3 capacitor properties

There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO 3 )/ferroelectric (BaTiO 3 )/metal oxide (SrRuO 3 ) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO 3 using a NaIO 4 solution and dry etching using an Ar + -ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar + beam can introduce defects into the SrRuO 3 /BaTiO 3 /SrRuO 3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Fabrication of pristine 2D heterostructures for scanning probe microscopy

Material-by-design has been a long-standing aspiration that has recently become a reality. Such designer materials have been repeatedly demonstrated using the top-down approach of mechanical exfoliation and stacking, leading to a variety of artificial 2D heterostructures with new properties that are otherwise unattainable. Consequently, tremendous research frontiers in physics, chemistry, engineering, and life science have been created. While thousands of layered crystals exist in nature, only a few dozen of them with manageable chemical-stability have been made into heterostructures using this method. Moreover, experimental investigations of materials that have received limited exploration in the 2D realm, such as cuprates, halides, and perovskites, along with their heterostructures, have been fundamentally hindered by their rapid chemical degradation. Another critical challenge imposed by exfoliating and stacking 2D layers in ambient environment is the absorption of itinerant gas molecules that further contaminate sensitive 2D interfaces in the heterostructures. Such contamination and compromised material properties significantly hinder surface-sensitive local probes—scanning probe microscopy (SPM)—that often require nanometer to atomic scale surface cleanliness. In this article, we aim to provide a technical review of recent development toward 2D materials and heterostructure fabrication in more controlled environments that are suitable for SPM characterizations. These include the development of more efficient mechanical exfoliation and dry-transfer techniques, as well as the incorporation of 2D material exfoliation and transfer in inert gas, low vacuum, and, eventually, ultra-high vacuum environments. Finally, we provide an outlook on the remaining challenges and opportunities in ultra-clean 2D material fabrication techniques.

Materials Science↗
DOE OSTI2018

Use of nanoporous glass for the fabrication of heavily bismuth-doped active optical fibres

We report on the fabrication of bismuth-doped active optical fibres using porous glass as a fibre core material. The fabrication of bismuth-doped porous-glass-based fibres is a technologically complex process that includes several high-temperature processing steps. Carefully adjusting conditions of all process steps, we have produced the first optical fibres with a rather high bismuth concentration (up to 0.5 at % and above) and necessary luminescence characteristics. Luminescence spectra of the materials produced in this study are presented. (optical fibres)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optimization of a Non-arsenic Iron-based Superconductor for Wire Fabrication

Here we report on the optimization of synthesis of iron selenide-based superconducting powders and the fabrication of selenide-based wire. The powders were synthesized by an ammonothermal method, whereby Ba is intercalated between FeSe layers to produce Ba x (NH 3 ) y Fe 2 Se 2 , with tetragonal structure similar to AFe 2 X 2 (X: As, Se), '122', superconductors. The optimal T c (up to 38 K) and Meissner and shielding superconducting fractions are obtained from the shortest reaction time (t) of reactants in liquid ammonia (30 min). With the increase of t, a second crystalline 122 phase, with a smaller unit cell, emerges. A small amount of NH 3 is released from the structure above ~200 °C, which results in loss of superconductivity. However, in the confined space of niobium/Monel tubing, results indicate there is enough pressure for some of NH 3 to remain in the crystal lattice, and thermal annealing can be performed at temperatures of up to 780 °C, increasing wire density and yielded a reasonable T c ≈ 16 K. Here, we report of the first successful wire fabrication of non-arsenic high-T c iron-based superconductor. We find that although bulk materials are estimated to carry critical current densities >100 kA cm ₋2 (4 K, self-field), the current transport within wires need to be optimized (J c ~ 1 kA cm ₋2 ).

36 MATERIALS SCIENCE↗
DOE OSTI2016

Fabrication artifacts and parallel loss channels in metamorphic epitaxial aluminum superconducting resonators

Fabrication of coplanar waveguide resonators with internal quality factors near 10 6 remains challenging. In this work, high-purity single crystal superconductors are implemented through metamorphic epitaxial aluminum that is grown via molecular beam epitaxy on silicon and sapphire substrates. X- ray diffraction and scanning transmission electron microscopy indicate an abrupt highly ordered interface that results in crystal relaxation within a few monolayers of the substrate interface and no measurable interfacial contamination. Quarter- wave coplanar waveguide resonators are fabricated using optical lithography and measured at temperatures below 100 mK. Post measurement characterization with charge contrast imaging in a scanning electron microscope identifies processing artifacts at the waveguide sidewalls, on the exposed substrate area and on the exposed aluminum surface. Of primary importance are processing induced corrosion defects on aluminum sidewalls, nanoparticle contamination, and photoresist residue that are difficult to remove without affecting the superconductor material. Likely correlations between these artifacts and the measured quality factor are discussed in context of device to device variations in resonator performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Design and fabrication of a high-density multilayer metal-insulator-metal capacitor based on selective etching

This paper presents a novel and cost-effective method for fabricating high-density multilayer metal-insulator-metal (MIM) integrated capacitors. To eliminate the usage of numerous photolithography steps when parallel stacking multiple capacitors layers, a unique process has been developed based on depositing the MIM layers onto a substrate with two protruding pillars, polishing down the pillars to expose the multilayer cross sections and then selectively etching the metal layers on each pillar to form the alternating capacitor plate electrodes. For demonstration purpose, only capacitors with two dielectric layers were fabricated, and the measurement results were verified by a compact analytical model together with finite element simulations. With 200 nm thick silicon nitride/oxide dielectric layers, a capacitance density of 0.6 fF mu m(-2) was achieved, which can be easily increased by scaling down the layer thicknesses and/or stacking more layers. A low equivalent series resistance (ESR) of 300-700 m Omega was measured, and the self-resonance frequency was above measurement limits (> 100 MHz). Further design optimization shows that the ESR can be reduced to below 80 m Omega, while the operation frequency extended to above 2.6 GHz.

Tseng, VFG↗
DOE OSTI2016

Design and fabrication of a differential scanning nanocalorimeter

This paper describes the design, fabrication, and characterization of a differential scanning nanocalorimeter that significantly reduces the sample volume to microliters and can potentially improve the temperature sensitivity to 10 µK. The nanocalorimeter consists of a polymeric freestanding membrane, four high-sensitive low-noise thermistors based on silicon carbide (SiC), and a platinum heater and temperature sensor. With the integrated heater and sensors, temperature scanning and power compensation can be achieved for calorimetric measurement. Temperature sensing SiC film was prepared by using sintered SiC target and DC magnetron sputtering under different gas pressures and sputtering power. The SiC sensing material is characterized through the measurement of current–voltage curves and noise levels. The thermal performance of a fabricated nanocalorimeter is studied in simulation and experiment. The experiment results show the device has excellent thermal isolation to hold thermal energy. As a result, the noise test together with the simulation show the device is promising for micro 10 µK temperature sensitivity and nanowatt resolution which will lead to low-volume ultra-sensitive nanocalorimetry for biological processes, such as protein folding and ligand binding.

42 ENGINEERING↗
DOE OSTI2024

Photonic curing for innovative fabrication of flexible metal oxide optoelectronics

Abstract Flexible optoelectronics, based on non-planar substrates, hold promise for diverse applications such as wearables, health monitors, and displays due to their cost-effective manufacturing methods. Despite the superior properties of metal oxides, the challenge of processing them at high temperatures incompatible with plastic substrates necessitates innovative annealing approaches. Photonic curing, which delivers microsecond to millisecond broadband (200–1500 nm) light pulses on a sample, emerges as a viable solution. Depending on the optical properties, the targeted film absorbs the radiant energy resulting in rapid heating while the transparent substrate absorbs a minimal amount of light and remains at ambient temperature. The light intensity can be high, but since the light pulse is short, the total energy absorbed by the sample remains low and will not damage the plastic substrate. This perspective explores the innovative application of photonic curing to fabricate flexible metal oxide optoelectronics, including thin-film transistors, metal–insulator–metal devices, solar cells, transparent conductors, and Li batteries, emphasizing the conversion of sol–gel precursors to metal oxides. However, this technique was initially developed for sintering metal nanoparticles to conductive patterns and poses intriguing challenges in explaining its mechanism for metal oxide conversion, especially considering the limited absorption of visible light by most sol–gel precursors. The review delves into UV-induced photochemistry, common flexible metal-oxide optoelectronic components, and non-intuitive distinctions between photonic curing and thermal annealing. By elucidating the distinctive role of photonic curing in overcoming temperature-related challenges and advancing the fabrication of flexible metal oxide optoelectronics, this perspective offers valuable insights that could shape the future of flexible optoelectronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗