Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “ELECTRON TRANSITION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,135 records · Page 63

Nonequilibrium charge-density-wave order beyond the thermal limit

The interaction of many-body systems with intense light pulses may lead to novel emergent phenomena far from equilibrium. Recent discoveries, such as the optical enhancement of the critical temperature in certain superconductors and the photo-stabilization of hidden phases, have turned this field into an important research frontier. Here, we demonstrate nonthermal charge-density-wave (CDW) order at electronic temperatures far greater than the thermodynamic transition temperature. Using time- and angle-resolved photoemission spectroscopy and time-resolved X-ray diffraction, we investigate the electronic and structural order parameters of an ultrafast photoinduced CDW-to-metal transition. Tracking the dynamical CDW recovery as a function of electronic temperature reveals a behaviour markedly different from equilibrium, which we attribute to the suppression of lattice fluctuations in the transient nonthermal phonon distribution. A complete description of the system’s coherent and incoherent order-parameter dynamics is given by a time-dependent Ginzburg-Landau framework, providing access to the transient potential energy surfaces.

36 MATERIALS SCIENCE↗

Improved design provides faster response time in photomultiplier

Dynamic Crossed-Field Electron Multiplying /DCFEM/ light demodulator avoids the normal response time limitations inherent in static field devices by using time varying crossed electric and static magnetic fields. This eliminates the transit time spread that affects electrons as they proceed along the secondary emission stages of the tube.

Source record↗

The direction of heat flow in an expanding current free stellar atmosphere

The energy budgets of the corona are substantially influenced by losses attributed to thermal conduction losses down the transition region, towards the chromosphere. Although Fourier law for such a plasma regime is now universally criticized as inappropriate, the direction of this heat flow seems to be certain. The purpose of this paper is to point out, based on conservation laws, the direction in which the heat must flow in this regime, provided it is known that there is a time independent expansion devoid of parallel currents. It will be argued that the direction of the heat flux is from the base of the transition region up into the corona, rather than the opposite. Under the circumstances mentioned above, the direction of the heat flow should be opposite to the gradient of the electron pressure gradient. Although the transition region is modeled as isobaric, this is only approximately true. Such a likely scenario makes the heat flow almost certainly to flow from the lower temperature base of the TR up into the incipient corona if a steady state current free expansion is to be maintained.

Scudder, J. D.↗

A Hot-Electron Far-Infrared Direct Detector

A new approach is proposed to improve the sensitivity of direct-detection bolometers at millimeter, submillimeter and far-infrared wavelengths. The idea is to adjust a speed of the thermal relaxation of hot-electrons in a nanometer size normal metal or super-conductive transition edge bolometer by controlling the elastic electron mean free path. If the bolometer contacts are made of a superconductor with high critical temperature (Nb, Pb etc.) then the thermal diffusion into the contacts is absent because of the Andreev's reflection and the electron-phonon relaxation is the only mechanism for heat removal. The relaxation rate should behave as T(sup 4)l at subkelvin temperatures (l is the electron elastic mean free path) and can be reduced by factor of 10-100 by decreasing l. Then an antenna- or waveguide-coupled bolometer with a time constant about 10(exp -3) to 10(exp -5) s at T approximately equals 0.1-0.3 K will exhibit photon-noise limited performance in millimeter and submillimeter range. The choice of the bolometer material is a tradeoff between a low electron heat capacity and fabrication. A state-of-the-art bolometer currently offers NEP = 10(exp -17) W(Square root of (Hz)) at 100 mK along with a approximately equals 2 msec time constant. The bolometer we propose will have a figure-of-merit, NEP(square root (r)), which is 10(exp 3) times smaller. This will allow for a tremendous increase in speed which will have a significant impact for observational mapping applications. Alternatively, the bolometer could operate at higher temperature with still superior sensitivity. This device can significantly increase a science return and reduce the cost for future observational missions. This research was performed by the Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by NASA, Office of Space Science.

Karasik, B. S.↗

Direct Observations of Field-Intensity-Dependent Dielectric Breakdown Mechanisms in TiO 2 Single Nanocrystals

One of the main challenges for next-generation electric power systems and electronics is to avoid premature dielectric breakdown in insulators and capacitors and to ensure reliable operations at higher electric fields and higher efficiencies. However, dielectric breakdown is a complex phenomenon and often involves many different processes simultaneously. Here we show distinctly different defect-related and intrinsic breakdown processes by studying individual, single crystalline TiO 2 nanoparticles using in-situ transmission electron microscopy (TEM). As the applied electric field intensity rises, rutile-to-anatase phase transition, local amorphization/melting, or ablation are identified as the corresponding breakdown processes, the field intensity thresholds of which are found to be related to the position of the intensified field and the duration of the applied bias relative to the time of charged defects accumulation. Our observations reveal an intensity-dependent dielectric response of crystalline oxides at breakdown and suggest possible routes to suppress the iniation of premature dielectric breakdown. Hence, they will aid the design and development of next generation robust and efficient solid dielectrics.

36 MATERIALS SCIENCE↗

Selected magnetoelectrical phonon stiffening in Cr 2 ⁢O 3

A thorough understanding of lattice dynamics, particularly how they couple with spin through spin-phonon interactions, is crucial for pioneering new spin-caloritronic applications. Here, despite extensive studies on Cr 2 ⁢O 3 , the origin of nonlinear thermal expansions and the unusual stiffening of optical phonon modes is still elusive. Through inelastic neutron scattering and atomistic calculations, we found that these behaviors can be attributed to the renormalization of electron states owing to the magnetic transition, and we ruled out the effects from thermal expansion, phonon anharmonicity, magnetostriction, or electron-phonon interactions. Importantly, our quantitative modeling suggests that the common belief that dynamic spin-phonon interactions are the origin of anomalous phonon energy stiffening in magnetic compounds does not apply in Cr 2 ⁢O 3 .

DFT+U↗

Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy

SiSn alloys have attracted growing interest for group-IV bandgap engineering, although their epitaxial growth remains challenging due to the extremely low equilibrium solubility of Sn in Si. In this work, fully strained (pseudomorphic) SiSn epitaxial layers were grown on Si (001) substrates by means of molecular beam epitaxy. A systematic investigation reveals a strong inverse correlation between growth temperature and Sn incorporation efficiency. Despite a constant Sn flux, the incorporated Sn composition decreases from 5.5% to 3.2% as the growth temperature increases, indicating a pronounced temperature dependence of Sn incorporation. Reflection high-energy electron diffraction indicates a gradual transition of the growth from two-dimensional to three-dimensional with increasing film thickness. Structural characterization by means of X-ray diffraction, atomic force microscopy, and transmission electron microscopy confirms the pseudomorphic growth and smooth surface morphology and reveals twins and stacking faults near the surface region. These results establish a quantitative reference for SiSn growth kinetics and provide guidance for future studies of SiSn and SiGeSn alloys in silicon-compatible electronic and optoelectronic applications.

SiSn alloys↗

Widths of atomic 4s and 4p vacancy states, 46 less than or equal to Z less than or equal to 50

Auger and X-ray photoelectron spectra involving N1, N2, and N3 vacancy states of Pd, Ag, Cd, In, and Sn were measured and compared with results of free atom calculations. As previously observed in Cu and Zn Auger spectra that involve 3d-band electrons, free-atom characteristics with regard to widths and structure were found in the Ag and Cd M4-N4,5N4,5 and M5-N4,5N4,5 Auger spectra that arise from transitions of 4d-band electrons. Theoretical N1 widths computed with calculated free-atom Auger energies agree well with measurements. Theory however predicts wider N2 than N3 vacancy states (as observed for Xe), while the measured N2 and N3 widths are nearly equal to each other and to the average of the calculated N2 and N3 widths. The calculations are made difficult by the exceedingly short lifetime of some 4p vacancies and by the extreme sensitivity of super-Coster-Kronig rates, which dominate the deexcitation, to the transition energy and to the fine details of the atomic potential.

Hsiungchen, M.↗

Dual Photoluminescence in Low-Temperature Phase of CsSnI 3 Nanocrystals

The expression of metal lone-pair electrons is hypothesized to underpin many of the interesting properties of inorganic halide perovskite semiconductors. Recently, a stable low-temperature monoclinic polar phase was predicted for CsSnBr 3 and CsSnI 3 , opening the possibility of direct investigation of a ferroelectric distorted structure compared to the undistorted structure. To date, there have been no experimental reports of such a structure in CsSnI 3 , and the low-temperature optical properties of CsSnI 3 nanocrystals have remained unexplored. Here we report optical and structural evidence of a phase transition around 240 K in 8.9 nm CsSnI 3 nanocrystals. Several changes in optical behavior occur below this transition point, including high-energy photoluminescence (PL) that emits concurrently with the exciton PL. The emergence of this high-energy PL is correlated with X-ray diffraction (XRD) and differential scanning calorimetry (DSC) supporting a phase transition from the orthorhombic structure between 240-200 K. Transient absorption measurements show an increase in the excited state lifetimes, i.e., slowed carrier cooling, at 200 K when photoexciting with photon energies above the high-energy state, consistent with slowed carrier cooling and emergence of high-energy PL. We hypothesize that the slowed carrier cooling is distinctive to this phase transition that modifies both the electronic and phonon structures that dictate excited-state carrier dynamics, and we discuss these changes.

14 SOLAR ENERGY↗

Classical electromagnetic radiation of the Dirac electron

A wave-function-dependent four-vector potential is added to the Dirac equation in order to achieve conservation of energy and momentum for a Dirac electron and its emitted electromagnetic field. The resultant equation contains solutions which describe transitions between different energy states of the electron. As a consequence it is possible to follow the space-time evolution of such a process. This evolution is shown in the case of the spontaneous emission of an electromagnetic field by an electron bound in a hydrogen-like atom. The intensity of the radiation and the spectral distribution are calculated for transitions between two eigenstates. The theory gives a self-consistent deterministic description of some simple radiation processes without using quantum electrodynamics or the correspondence principle.

Lanyi, G.↗

Electronic structure and magnetic tendencies of trilayer La 4 Ni 3 O 10 under pressure: Structural transition, molecular orbitals, and layer differentiation

Motivated by the recent observation of superconductivity in the pressurized trilayer Ruddlesden-Popper (RP) nickelate La 4 Ni 3 O 10 , we explore its structural, electronic, and magnetic properties as a function of hydrostatic pressure from first-principles calculations. We find that an orthorhombic (monoclinic)-to-tetragonal transition under pressure takes place concomitantly with the onset of superconductivity. The electronic structure of La 4 Ni 3 O 10 can be understood using a molecular trimer basis wherein n molecular subbands arise as the d z 2 orbitals hybridize strongly along the c axis within the trilayer. The magnetic tendencies indicate that the ground state at ambient pressure is formed by nonmagnetic inner planes and stripe-ordered outer planes that are antiferromagnetically coupled along the c axis, resulting in an unusual ↑, 0, ↓ stacking that is consistent with the spin density wave model previously suggested by neutron diffraction. Such a state is destabilized at the pressure where superconductivity arises. Despite the presence of d z 2 states at the Fermi level, the d x 2 –y 2 orbitals also play a key role in the electronic structure of La4Ni3O10. Finally, this active role of the d x 2 –y 2 states in the low-energy physics of the trilayer RP nickelate, together with the distinct electronic behavior of the inner and outer planes, resembles the physics of multilayer cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Theoretical models for electron energy relaxation in the lower ionosphere

Elastic collisions and rotation inelastic collisions involving quadrupole molecular transitions are important in energy relaxation of electrons in molecular gases. It has been customary in studying the cooling of electrons in a plasma heated by high-frequency waves to characterize this relaxation by the ionospheric G factor. The G factor is first defined in a fundamental way by use of kinetic theory. Then present models for theoretical cross sections for electron collision with O2 and N2 are used to derive expressions for the G factor in the lower ionosphere. Two models are considered: one uses Gerjuoy-Stein models for both N2 and O2; the other uses a Gerjuoy-Stein model for N2 and a Geltman-Takayanaki model for O2. Neither O2 model has been definitely established experimentally. It is found that temperature dependence of G is critically dependent on the O2 model.

Hagenbuch, K. M.↗

Electronic absorption spectra of lunar minerals

Techniques for obtaining information on the crystal chemistry of transition-metal ions from measurement of the electronic absorption spectra of lunar minerals are reviewed along with the theory of spectral interpretation. Typical polarized absorption spectra are examined for lunar pyroxenes, pyroxferroite, olivine, and plagioclase feldspars. Oxidation states of Fe, Ti, and Cr in lunar minerals are discussed, and conditions under which they crystallized are considered. It is shown how information on the gross mineralogy and petrology of different regions of the moon's surface may be extracted from remote reflectivity measurements of that surface.

Vaughan, D. J.↗

Transition metal oxides - CrO, MoO, NiO, PdO, AgO

The transition-metal oxides are quite ionic; Mulliken population analyses for several oxides give a negative charge of about 0.7 electrons for oxygen. When the transition-metal d shell is only partially filled, the orbitals are involved in covalent bonds with O; both two-electron bonding (2)-antibonding (0) and one-electron bonding (2)-antibonding (1) bonds are formed. These covalent bonds occur in addition to the ionic bonding. There is d-sigma-O2 p sigma repulsion, and this repulsion is reduced when the d-sigma electron is promoted into an orbital which has dominantly 4sp-sigma character and is polarized away from O.

Bauschlicher, C. W., Jr.↗

Universal relation between doping content and normal-state resistance in gate voltage tuned ultrathin Bi 2 Sr 2 CaCu 2 O 8 + x flakes

We report gate voltage tunable ultra-thin high-T c cuprates supply a unique platform to investigate the electronic phase diagram and superconductor-insulator transition. One of the challenges in this field is the precise determination of the doping content in the underdoped non-superconducting region. Here we report the discovery of a universal relation between the doping content p and the normal-state resistance at a fixed temperature R(T f ), p = α + β ln[1/R(T f )], in the ultra-thin Bi 2 Sr 2 CaCu 2 O 8+x flakes. The in-depth analysis shows that the evolution of carrier scattering probability with doping content and the change of effective mass caused by superconductor-insulator transition are two key factors leading to this logarithmic relation. Based on our finding, the more precise electronic phase diagram can be established. In addition, the superconductor-insulator transition is verified to be a quantum phase transition using a finite size scaling analysis. The scaling exponent z v is found to have a close correlation with the disorder levels. The present result provides an important foundation to investigate the fascinating electronic states in the ultra-thin cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Flow-shear destabilization of multiscale electron turbulence

The impact of sheared ${\mathbf{E} \hskip -1pt \times \hskip -1pt \mathbf{B}}$ flow on multiscale turbulence is studied with nonlinear gyrokinetic simulations. Simulations are based on DIII-D-like, high-confinement mode (H-mode) pedestal parameters in the regime of low ion temperature gradient drive, where there is a broad spectrum of electron temperature gradient (ETG)-driven turbulence. It is found that ${\mathbf{E} \hskip -1pt \times \hskip -1pt \mathbf{B}}$ shear can have a significant effect on ETG-driven electron transport, with an unexpected transition from a turbulence stabilization regime at moderate to large shearing rates $γ_E$ to a novel turbulence destabilization regime at low levels of $γ_E$. In the turbulence stabilization regime, the electron energy flux decreases monotonically with $γ_E$, even when $γ_E$ is small compared to electron mode growth rates. The stabilizing effect comes dominantly from the electron, not ion, gyrokinetic equation. In the novel destabilization regime, reduction of zonal energy results from the interaction of $γ_E$-modulated nonlinear drive in the zonal ion gyrokinetic equation, increasing the electron transport over a broad range of shearing rates. Finally, neither of these effects has been observed in previous electron-scale simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Effect on real-world depth perception from exposure to heads-down stereoscopic flight displays

A stereoacuity test was used as part of the experimental protocol of a study in which eight transport pilots flew repeated simulated landing approaches using both stereo and nonstereo three-dimensional heads-down 'pathway in the sky' displays. At the decisionmaking crux of each approach, the pilots transitioned to a stereoacuity test employing real objects rather than a two-dimensional target apparatus. A statistical analysis of stereoacuity measures which compared a controlled condition of no exposure to any electronic flight display with the transition data from nonstereo and stereopsis displays indicated no significant differences for any of the conditions.

Busquets, Anthony M.↗

Heat flux observations and the location of the transition region boundary of Giacobini-Zinner

Electron heat flux observations and associated plasma phenomena upstream from Comet Giacobini-Zinner show many similarities to observations upstream from the earth's magnetosheath. Two similarities are discussed. Heat flux events are used to compute the transition region boundary location. The computed subsolar standoff distance of 4,000 km is commensurate with a comet gas production rate, G, of 3 x 10 to the 28th molecules/s in accord with ground-based determination of G.

Fuselier, S. A.↗