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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Surface topography of single crystals of face- centered-cubic, body-centered-cubic, sodium chloride, diamond, and zinc blende structures
Absolute reflection spectrum of type iia diamond at room temperatures from 4 to 30 ev, obtaining ultraviolet optical constants and complex dielectric constant
Optical transmission, photoconductivity, mobility and activation, and lifetimes and trapping of carriers in natural semiconducting diamonds
Critique of paper by Carter and Kennedy regarding origin of diamonds in Canyon Diablo and Novo Urei meteorite
Fine structure in direct absorption edge of cleaved type IIA diamond determined from reflectance data obtained from 5.5 to 11.5 ev at room and liquid-nitrogen temperatures
Reflection, dielectric constant, and band structure measurements on diamond crystal
Hypersonic flight performance of basic and modified delta wings with diamond cross sections
Diamond electronic structure studied by absolute reflectance measurements, obtaining dielectric response function over broad energy range
Diamond possesses a combination of properties which makes it uniquely suited to a number of scientific, military, and industrial applications.
The electrical resistivity of undoped diamond films has been measured between room temperature and 1200 C.
Off-axis, high-sag PIAA optics for high contrast imaging present challenges in manufacturing and testing. With smaller form factors and consequently smaller surface deformations (< 80 microns), diamond turned fabrication of these mirrors becomes feasible. Though such a design reduces the system throughput, it still provides 2(lambda)D inner working angle. We report on the design, fabrication, measurements, and initial assessment of the novel PIAA optics in a coronagraph testbed. We also describe, for the first time, a four mirror PIAA coronagraph that relaxes apodizer requirements and significantly improves throughput while preserving the low-cost benefits.
Polycrystalline diamond thin film has been grown on a silicon substrate using high pressure microwave plasma-assisted chemical vapor deposition from a gas mixture of methane and hydrogen at a substrate temperature of 950 degrees celcius.
Argonne scientists discovered a technique to create a layer of diamond-like carbon on the surfaces between moving parts. This could change the future of lubrication—potentially making engines more efficient, more reliable, and even greener (by reducing heavy metal additives needed in engine oils.)
This presentation describes experimental measurements with thin scCVD diamond detectors and their DD and DT neutron sources. This presentation will be given at the NNSS Prompt Radiation Detection and Imaging Workshop April 25-28, 2022.
Silicon carbide (SiC) is one of the hardest known materials. Its exceptional mechanical properties combined with its high thermal conductivity make it a very attractive material for a variety of technological applications. Recently, it was discovered that two-layer epitaxial graphene films on SiC can undergo a pressure activated phase transition into a sp3 diamene structure at room temperature. Here, we show that epitaxial graphene films grown on SiC can increase the hardness of SiC up to 100% at low loads (up to 900 µN), and up to 30% at high loads (10 mN). By using a Berkovich diamond indenter and nanoindentation experiments, we demonstrate that the 30% increase in hardness is present even for indentations depths of 175 nm, almost three hundred times larger than the graphene film thickness. The experiments also show that the yield point of SiC increases up to 77% when the SiC surface is coated with epitaxial graphene. These improved mechanical properties are explained with the formation of diamene under the indenter’s pressure.
Abstract Boron‐doped diamond (BDD) electrodes are widely used in electrochemical sensing and water purification owing to their chemical and structural stability under harsh reaction conditions. Water oxidation at BDD electrodes is known to produce reactive oxygen species, but the discharged and surface chemistries involved in these processes have not been studied in depth. Here, we present scanning electrochemical microscopy (SECM) studies of electrogenerated intermediates and products formed on sp 2 carbon‐containing BDD electrodes that display stark differences in their reactivity as a function of electrolyte type and pH during water oxidation. The most reactive and abundant species discharged from the electrode were observed at pH 11 in sulfate electrolyte. With the surface interrogation mode of SECM, two kinetically distinct surface intermediates were clearly distinguished, with one forming two orders of magnitude faster than the other but displaying a slower desorption rate. The surface coverage of these species was estimated in the range of 4–7×10 −5 mol/cm 2 for the first, and 3–4.4×10 −5 mol/cm 2 for the second one. SECM imaging suggested that regions of increased product evolution have decreased electron transfer kinetics and limited surface sites for intermediate binding. This work establishes methods for studying highly reactive intermediates found in BDD and paves the way for the inspection of other interfaces where solvolysis impacts their reactivity and evolution.
Rationale Back‐side thinning of wafers is used to eliminate issues with transient sputtering when analyzing near‐surface element distributions. Precise and accurate calibrated implants are created by including a standard reference material during the implantation. Combining these methods allows accurate analysis of low‐fluence, shallow features even if matrix effects are a concern. Methods Implanted Na (<2.0 × 10 11 ions/cm 2 , peaking <50 nm) in diamond‐like carbon (DLC) film on silicon (solar wind returned by NASA's Genesis mission) was prepared for measurement as follows. Implanted surfaces of samples were epoxied to wafers and back‐side‐thinned using physical or chemical methods. Thinned samples were then implanted with reference ions for accurate quantification of the solar wind implant. Analyses used a CAMECA IMS 7f‐GEO SIMS in depth‐profiling mode. Results Back‐side‐implanted reference ions reduced the need to change sample mounts or stage position and could be spatially separated from the solar wind implant even when measuring monoisotopic ions. Matrix effects in DLC were mitigated and the need to find an identical piece of DLC for a reference implant was eliminated. Accuracy was only limited by the back‐side technique itself. Conclusions Combining back‐side depth profiling with back‐side‐implanted internal standards aides quantification of shallow mono‐ and polyisotopic implants. This technique helps mitigate matrix effects and keeps measurement conditions consistent. Depth profile acquisition times are longer, but if sample matrices are homogeneous, procedural changes can decrease measurement times.