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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Thick-film materials for silicon photovoltaic cell manufacture

Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

Field, M. B.↗
DOE OSTI2017

Tribological Characterization of SiC and B{sub 4}C Manufactured by Plasma Pressure Compaction

The objective of the present study was to assess the tribological properties and the wear behavior of silicon carbide and boron carbide ceramics, produced by the plasma pressure compaction sintering process. Reciprocating sliding tests were executed to evaluate the tribological behavior of silicon carbide and boron carbide. Samples of each material with distinct values of surface roughness Ra were tested. Wear mass loss, coefficients of friction and wear mechanism of the boron carbide and silicon carbide were evaluated by means of microscopes and an energy-dispersive spectroscopy probe. The coefficient of friction of the evaluated boron carbide was found to be 0.8, and the surface roughness affects only the starting transient, while for silicon carbide the steady-state value ranges from 0.5 to 0.8 depending on the roughness value Ra.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electrolytic Etching of Germanium Substrates with Hydrogen Peroxide

Anodic electrolytic etching of germanium has been performed in hydrogen peroxide etchants with controlled external conditions. In-situ current and ex-situ etch-depths were measured and tracked with respect to etchant composition and stir rates. Gas bubbles formed during the etching process were found to cause non-uniformity in etch-current and surface quality. The effects were minimized in specific composition spaces. Quantitative analysis revealed a linear correlation of the number of electrons transferred during germanium oxidation with the number of surface atoms removed. Experimental results of 2.77 electrons/atom deviate significantly from 4 electrons/atom previously reported for silicon. The conclusion is that etching mechanisms for germanium are sufficiently different from those for silicon which invalidates the direct transfer of processing techniques between the two materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. Moreover, it is shown, that the photoenhanced wet chemical etching allows to remove GaN layer without damaging silicon substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1990

Photon detection with parallel asynchronous processing

An approach to photon detection with a parallel asynchronous signal processor is described. The visible or IR photon-detection capability of the silicon p(+)-n-n(+) detectors and the parallel asynchronous processing are addressed separately. This approach would permit an independent analog processing channel to be dedicated to every pixel. A laminar architecture consisting of a stack of planar arrays of the devices would form a 2D array processor with a 2D array of inputs located directly behind a focal-plane detector array. A 2D image data stream would propagate in neuronlike asynchronous pulse-coded form through the laminar processor. Such systems can integrate image acquisition and image processing. Acquisition and processing would be performed concurrently as in natural vision systems. The possibility of multispectral image processing is addressed.

Coon, D. D.↗
NASA NTRS1982

Processed-induced defects in EFG ribbons

The defect structure of processed edge defined film-fed growth (EFG) silicon ribbons was studied using a variety of electron microscopic techniques. Comparison between the present results and previous studies on as-grown ribbons has shown that solar cell processing introduces additional defects into the ribbons. The creation of point defects during high temperature phosphorus diffusion induces dislocation climb, resulting in the formation of dislocation helices in the diffused layer.

Cunningham, B.↗
DOE OSTI2024

Enhancing Mechanical Properties of Carbon–Silicon Steel through Two–Stage Quenching and Partitioning with Bainitic Transformation: Ultimate Tensile Strength of 1875 MPa and Total Elongation of 8.03%

To achieve the desired microstructural properties, the ongoing development and innovation in new structural steels require novel thermal processing. This study aims to improve the mechanical properties of a commercial spring carbon–silicon steel by tailoring its microstructure through a process involving quenching and partitioning (Q&P) followed by bainitic transformation. A two–stage Q&P process is proposed to generate a nanoscale dispersion of stable retained austenite and carbides within the tempered martensite and bainite microstructure. The resulting tensile properties demonstrate a yield strength of 1280 MPa, an ultimate tensile strength of 1875 MPa, and a total elongation of 8.03%. These values surpass those of conventional spring 9254 steel, highlighting the effectiveness of the thermal treatment design. Microstructure analysis reveals the presence of tempered martensite, bainite sheaves, nanoscale carbides, and aggregates of retained austenite. Moreover, the resulting body–centered cubic matrix exhibits minimal lattice tetragonality of ≈1.0051, coupled with stable retained austenite featuring a carbon concentration of ≈3.42 ± 0.5 wt%, resulting in outstanding strength–ductility properties. In conclusion, these findings indicate that the proposed two–stage Q&P process, followed by bainitic transformation, significantly enhances the mechanical properties of carbon–silicon steels, making it a promising candidate for high–performance spring applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Fabrication and Testing of Complex Silicon Carbide Composite Structures

The ability to fabricate larger complex silicon carbide composites is an enabling technology for advanced reactors. Processing techniques to make complex SiC/SiC structures must be versatile enough to facilitate fabrication of both very large components (>1 m), as well as very small feature sizes (<1 mm), minimize the amount of machining required to complete the final part, and must also provide composite material with similar performance to bulk properties previously established for planar SiC/SiC composite material. This paper presents results on fabrication of complex silicon carbide structures and targeted testing aimed specifically at understanding how complex features impact composite performance. Silicon carbide (SiC) and silicon carbide matrix, silicon carbide fiber-reinforced composites (SiC/SiC) are a strong candidate for cladding and core structure used in advanced reactor concepts such as General Atomics' (GA) Energy Multiplier Module (EM{sup 2}) as well as accident tolerant fuel (ATF) in LWRs. SiC retains its strength up to very high temperatures, is stable under irradiation, and shows favorable neutronics and oxidation resistance compared to alloy alternatives. However, unlike metals, SiC cannot be easily machined, formed or welded to make the more complex core components needed to fully realize the benefits of advanced high temperature reactors. TEP processing provides an appealing route to achieving SiC/SiC composite structures with enhanced feature complexity. This is a critical development in the maturation of SiC/SiC for in-core structural materials in advanced reactors. This processing route provides an avenue to make large, dense, complex structures. Experiments have shown retention of strength and pseudo-ductility with hole spacing as small as 4 mm with potential for still smaller feature spacing. The results indicate that feature spacing is not limited by processing effects, but instead by the fiber architecture. The lower limit of feature spacing will likely have implications on potential core loading limits in advanced nuclear reactors utilizing SiC/SiC. (authors)

36 MATERIALS SCIENCE↗
NASA NTRS1975

Development of a high efficiency thin silicon solar cell

Variations in temperatures used in experimental processing and their effect on the resulting solar cell performance parameters were investigated. Diffusion temperature variation results in a fairly distinct optimum cell performance for diffusion temperatures in the immediate vicinity of 850 C. An additional effort was also devoted to redesign of the matallization gridline pattern for both minimum light blockage and minimum fill factor alteration due to series resistance. Efforts on improvement of tantalum oxide antireflection coatings were undertaken. Fifty 2 cm x 2 cm cells having a range of thicknesses have been submitted as the first sample group. These cells were processed under conditions tentatively identified during this first contractual quarter's experiments as being optimal for resulting cell performance.

Lindmayer, J.↗
DOE OSTI2026

Pulsed radio frequency power modulation for profile control in cryogenic reactive ion etching of silicon gratings

Cryogenic silicon etching with SF 6 /O 2 plasmas enables vertical sidewalls and smooth surfaces for high–aspect-ratio structures, yet precise control of etched profiles (sidewall angle, lateral etching, and linewidth retention) remains challenging under continuous-wave excitation due to coupling among radical fluxes, ion energy distributions, and in situ passivation dynamics. In this work, we investigated pulsed radio frequency bias delivery as a process knob for profile control during cryogenic silicon etching. Systematic experiments on 500 nm-wide, 1 μm-pitch gratings etched to 0.8–1.1 μm depth at 0.5–2 kHz pulsing frequency and 25%–75% duty cycle revealed strong dependencies of etch rate, linewidth, and sidewall angle on modulation conditions. We proposed a conceptual kinetic picture combined with feature-scale electrostatic analysis to understand the alternation of ion-driven etching and passivation recovery between on/off segments and local electric field shaping and modulation of ion trajectories within the trench. Moderate duty cycles (50%–75%) near 1 kHz achieved a balance between anisotropy and etch rate. These results demonstrate pulsed-bias modulation can be utilized to tune directionality and sidewall preservation in cryogenic SF 6 /O 2 etching, which are relevant to photonic, metrology, and quantum device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Final Report: Hot Carrier Collection in Thin Film Silicon with Tailored Nanocrystalline/Amorphous Structure

This project developed, characterized, and perfected a new type of highly tunable nanocrystalline silicon (nc-Si:H) incorporating quantum confined silicon nanoparticles (SiNPs). A dual zone deposition process and system were developed and demonstrated. The depositions of SiNPs, the amorphous phase, and co-deposited material were characterized and optimized. Material design and interpretation of results were guided by new theoretical tools that examined both the electronic structure and carrier dynamics of this hybrid material. Heterojunction and p-i-n solar cells were demonstrated and characterized. Photo-thin-film-transistors allowed mobility to be studied as a function SiNP density in the films. Rapid (hot) transfer of carriers from the amorphous matrix to the quantum confined SiNPs was observed and connected to reduced photo-degradation. The results carry quantum confined Si dots from a novelty to materials that can be harnessed for PV and optoelectronic applications. The growth process is broadly extendable with alternative amorphous matrices, novel layered structures, and alternative NPs easily accessible. The hot carrier effects hold the potential for third generation photovoltaics.

14 SOLAR ENERGY↗
NASA NTRS1987

Radiation characteristics of low resistivity float zone silicon solar cells

The effects of 1-MeV electron irradiation on silicon solar cells with AM0 efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. These cells do not demonstrate post-electron-irradiation photon decay as has been described for cells processed on 1-10 ohm-cm FZ silicon.

Crotty, G. T.↗
DOE OSTI2025

Passivation and Degradation of Sulfur-Treated Silicon Surfaces for Photovoltaics

Sulfur-based passivation for silicon surfaces using H2S gas is an alternative passivation method to reduce the thermal budget for Si photovoltaics. To understand the impact of the high-quality passivation and an observed passivation efficiency decrease after air exposure, we have studied the chemical surface structure by X-ray photoelectron spectroscopy (XPS), X-ray Auger electron spectroscopy (XAES), and S and Si L2,3 X-ray emission spectroscopy (XES). On the S-passivated silicon surfaces, we find the formation of S–Si bonds, in addition to some Si–O bonds. Upon air exposure, sulfur partially desorbs from the Si surface and an increased presence of Si–O and S–O bonds is observed. We identify that well-defined S–Si bonds are crucial to maintain high-quality surface passivation for Si photovoltaics, which allows further optimization of the fabrication process for S-based passivation on silicon.

Hua, Amandee↗
NASA NTRS1975

Space processing of composite materials

Materials and processes for the testing of aluminum-base fiber and particle composites, and of metal foams under extended-time low-g conditions were investigated. A wetting and dispersion technique was developed, based on the theory that under the absence of a gas phase all solids are wetted by liquids. The process is characterized by a high vacuum environment and a high temperature cycle. Successful wetting and dispersion experiments were carried out with sapphire fibers, whiskers and particles, and with fibers of silicon carbide, pyrolytic graphite and tungsten. The developed process and facilities permit the preparation of a precomposite which serves as sample material for flight experiments. Low-g processing consists then merely in the uniform redistribution of the reinforcements during a melting cycle. For the preparation of metal foams, gas generation by means of a thermally decomposing compound was found most adaptable to flight experiments. For flight experiments, the use of compacted mixture of the component materials limits low-g processing to a simple melt cycle.

Steurer, W. H.↗
NASA NTRS1983

Fabricating a Microcomputer on a Single Silicon Wafer

Concept for "microcomputer on a slice" reduces microcomputer costs by eliminating scribing, wiring, and packaging of individual circuit chips. Low-cost microcomputer on silicon slice contains redundant components. All components-central processing unit, input/output circuitry, read-only memory, and random-access memory (CPU, I/O, ROM, and RAM) on placed on single silicon wafer.

Evanchuk, V. L.↗
NASA NTRS1977

Investigation of test methods, material properties and processes for solar cell encapsulants

The potentially useful encapsulating materials for Task 3 of the Low-Cost Silicon Solar Array project were studied to identify, evaluate, and recommend encapsulant materials and processes for the production of cost-effective, long-life solar cell modules. Materials for study were chosen on the basis of existing knowledge of generic chemical types having high resistance to environmental weathering. The materials varied from rubbers to thermoplastics and presented a broad range of mechanical properties and processing requirements. Basic physical and optical properties were measured on the polymers and were redetermined after exposure to indoor artificial accelerated aging conditions covering four time periods. Strengths and weaknesses of the various materials were revealed and data was accumulated for the development of predictive methodologies. To date, silicone rubbers, fluorocarbons, and acrylic polymers appear to have the most promising combination of characteristics. The fluorocarbons may be used only as films, however, because of their high cost.

Willis, P. B.↗
NASA NTRS1972

Improved oxidation-resistant carbon and graphite materials

A variety of silicon-carbide treated carbon and graphite products were prepared, and oxidation and strength properties determined. Carbon and graphite materials used in the preliminary study include fiber, tape, felt, foam, bulk, and laminar configurations. The silicon-carbide treatment used in preparing the oxidation resistant specimens employs either vacuum or ultrasonic impregnation of various silicone-silicon mixtures into the matrix material. The impregnation phase is followed by controlled thermal reaction at which time the silicon carbide is synthesized and takes the form of an integral protective boundary layer. Thickness of the layer ranges from a fraction of a mil to 10 mils, depending on the matrix material and processing parameters. Oxidation resistance of all the silicon-carbide-treated specimens investigated was found to be significantly improved. Mechanical strengths of the laminar composites were also found to be somewhat improved. At room temperature the specific strength of the silicon-carbide treated fibers and tapes was degraded to some extent; however, their relative strengths were significantly increased at elevated temperatures in oxidizing atmosphere.

Muir, H. M.↗