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At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Transport gap in SmB 6 protected against disorder

Significance The realization of modern electrical and optoelectrical devices is possible because of the successful control of point defects in semiconductors or narrow band-gapped insulators. Recently, a new subclass of these semiconductors has been discovered, so-called topological insulators (TIs). These 3D TIs harbor a unique 2D conduction layer on the surfaces that can be potentially applicable for novel quantum devices. The access of these surface states, however, is easily hindered by bulk conduction from unintentional defects. Surprisingly, by using a unique resistance measurement in a strongly correlated TI S m B 6 , we find that typical defect signatures of a semiconductor in electrical transport are absent in the S m B 6 bulk, including samples prepared with large samarium-to-boron off-stoichiometry.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Carrier localization in perovskite nickelates from oxygen vacancies

Point defects, such as oxygen vacancies, control the physical properties of complex oxides, relevant in active areas of research from superconductivity to resistive memory to catalysis. In most oxide semiconductors, electrons that are associated with oxygen vacancies occupy the conduction band, leading to an increase in the electrical conductivity. Here we demonstrate, in contrast, that in the correlated-electron perovskite rare-earth nickelates, R NiO 3 ( R is a rare-earth element such as Sm or Nd), electrons associated with oxygen vacancies strongly localize, leading to a dramatic decrease in the electrical conductivity by several orders of magnitude. This unusual behavior is found to stem from the combination of crystal field splitting and filling-controlled Mott–Hubbard electron–electron correlations in the Ni 3 d orbitals. Furthermore, we show the distribution of oxygen vacancies in NdNiO 3 can be controlled via an electric field, leading to analog resistance switching behavior. This study demonstrates the potential of nickelates as testbeds to better understand emergent physics in oxide heterostructures as well as candidate systems in the emerging fields of artificial intelligence.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Density-functional theory for plutonium

We review here developments in the theoretical description and understanding of plutonium in terms of a metal with itinerant (band) 5f electrons. Within this picture most facets of this remarkable and anomalous material are accurately described by first-principle, parameter-free, density-functional-theory (DFT) calculations. We show that the model explains plutonium’s phase stability, elasticity, lattice vibrations, electronic structure, alloy properties, and magnetism. Fluctuations are addressed by means of constrained DFT calculations and new light is shed on the anomalous properties of δ plutonium, including explaining its negative thermal expansion. Effects of alloying and point defects in plutonium are also addressed. It is further emphasized that strong electron correlations, originating from a large intra-atomic Coulomb repulsion (~4 eV) of the 5f electrons, that has often been assumed for plutonium in the literature, is inconsistent with the experimental phase diagram of plutonium.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

Disordered vortex matter out of equilibrium: a Langevin molecular dynamics study

We discuss the use of Langevin molecular dynamics in the investigation of the non-equilibrium properties of disordered vortex matter. Here, our special focus is set on values of system parameters that are realistic for disordered high-T c superconductors such as YBCO. Using a discretised elastic line model, we study different aspects of vortices far from thermal equilibrium. On the one hand, we investigate steady-state properties of driven magnetic flux lines in a disordered environment, namely the current–voltage characteristics, the gyration radius and the pinning time statistics. On the other hand, we study the complex relaxation processes and glassy-like dynamics that emerge in type-II superconductors due to the intricate competition between the long-range vortex–vortex repulsion and flux pinning due to randomly placed point defects. To this end, we consider different types of sudden perturbations: temperature, magnetic field and external current quenches.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2015

Anisotropy of the solid–liquid interface properties of the Ni–Zr B33 phase from molecular dynamics simulation

Solid–liquid interface (SLI) properties of the Ni–Zr B33 phase were determined from molecular dynamics simulations. In order to perform these measurements, a new semi-empirical potential for Ni–Zr alloy was developed that well reproduces the material properties required to model SLIs in the Ni 50.0 Zr 50.0 alloy. In particular, the developed potential is shown to provide that the solid phase emerging from the liquid Ni 50.0 Zr 50.0 alloy is B33 (apart from a small fraction of point defects), in agreement with the experimental phase diagram. The SLI properties obtained using the developed potential exhibit an extraordinary degree of anisotropy. It is observed that anisotropies in both the interfacial free energy and mobility are an order of magnitude larger than those measured to date in any other metallic compound. Moreover, the [0 1 0] interface is shown to play a significant role in the observed anisotropy. Our data suggest that the [0 1 0] interface simultaneously corresponds to the lowest mobility, the lowest free energy and the highest stiffness of all inclinations in B33 Ni–Zr. This finding can be understood by taking into account a rather complicated crystal structure in this crystallographic direction.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Spatially dependent cluster dynamics model of He plasma surface interaction in tungsten for fusion relevant conditions

In fusion reactors, plasma facing components (PFC) and, in particular, the divertor will be irradiated with high fluxes of low-energy (similar to 100 eV) helium and hydrogen ions. Tungsten is one of the leading candidate divertor materials for ITER and DEMO fusion reactors. However, the behaviour of tungsten under high dose, coupled helium/hydrogen exposure remains to be fully understood. The PFC response and performance changes are intimately related to microstructural changes, such as the formation of point defect clusters, helium and hydrogen bubbles or dislocation loops. Computational materials' modelling results are described here that investigate the mechanisms controlling microstructural evolution in tungsten. The aim of this study is to understand and predict sub-surface helium bubble growth under high flux helium ion implantation (similar to 10 22 m -2 s -1 ) at high temperatures (>1000 K). Here, we report results from a spatially dependent cluster dynamics model based on reaction-diffusion rate theory to describe the evolution of the microstructure under these conditions. The key input parameters to the model (diffusion coefficients, migration and binding energies, initial defect production) are determined from a combination of atomistic modelling and available experimental data. The results are in good agreement with results of an analytical model that is presented in a separate paper. In particular, it is found that the sub-surface evolution with respect to bubble size and concentration of the helium bubbles strongly depends on the flux and temperature.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Color-Center Production and Formation in Electron-Irradiated Magnesium Aluminate Spinel and Ceria

Single crystals of magnesium aluminate spinel (MgAl2O4) with (100) or (110) orientations and cerium dioxide or ceria (CeO2) were irradiated by 1.0-MeV and 2.5-MeV electrons in a high fluence range. Point-defect production was studied by off-line UV-visible optical spectroscopy after irradiation. For spinel, regardless of both crystal orientation and electron energy, two characteristic broad bands centered at photon energies of 5.4 eV and 4.9 eV were assigned to F and F+ centers (neutral and singly-ionized oxygen vacancies), respectively, on the basis of available literature data. No clear differences in colour-centre formation were observed for the two crystal orientations. Using calculations of displacement cross sections by elastic collisions, these results are consistent with a very large threshold displacement energy (200 eV) for oxygen atoms at RT. A third very broad band centered at 3.7 eV might be attributed either to an oxygen hole center (V-type center) or an F2 dimer center (oxygen di-vacancy). The onset of recovery of these color centers took place at 200°C with almost full bleaching at 600°C. Activation energies (~0.3-0.4 eV) for defect recovery were deduced from the isochronal annealing data by using a first-order kinetics analysis. For ceria, a sub band-gap absorption feature peaked at ~3.1 eV was recorded for 2.5-MeV electron irradiation only. Assuming a ballistic process, we suggest that the latter defect might result from cerium atom displacement on the basis of computed cross sections.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Combined crystal plasticity and grain boundary modeling of creep in ferritic-martensitic steels: I. Theory and implementation

This paper presents a physically-based microstructural model for creep rupture at 600 degrees °C for Grade 91 steel. The model includes constitutive equations that reflect various observed phenomena in Grade 91, and it is incorporated into a mesoscale finite element model with explicit geometry for the prior austenite grains and grain boundaries. Creep within the grains is represented using crystal plasticity for dislocation motion and recovery along with linear viscous diffusional creep for point defect diffusion. The grain boundary models include physics-based models for cavity growth and nucleation that accurately capture tertiary creep and creep rupture. Simulations of creep at 100 MPa are performed, and the contribution of each mechanism is analyzed. The overarching goal is to gain a mechanistic understanding of the material to improve the prediction of creep rupture for long service lives in elevated temperature operating conditions. The creep response of the material at different stress levels, stress states, and temperatures is studied in Part 2 of this paper in order to determine the implications of the simulations on high temperature design practice. Furthermore, the second part explores the effect of triaxial stress states on the creep response and finds a transition from notch-strengthening behavior at high stress to notch-weakening behavior at lower stresses.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effective pair potential for random fcc CoCrFeMnNi alloys

The single-phase equiatomic CoCrFeMnNi alloy is a random solid solution of five elements on the face-centered cubic lattice, whose pure constituents crystallize in very different structures and exhibit diverse magnetic properties. Due to the randomness of the alloy, 80% of nearest neighbor bonds are between unlike elements and thus the details of bonding in pure structures are less important. The elastic moduli of this alloy give rise to small Cauchy pressure C 12 - C 44 , which suggests that the dominant part of bonding may be described by a simple pair potential. We test this hypothesis by developing a long-range Lennard-Jones potential in which the equilibrium crystal structures of pure constituents are taken as reference. The standard mixing rules for regular solutions are then adopted to obtain parameters for bonds between unlike elements in the quinary system. The transferability of this potential to quaternary CoCrFeNi, ternary CoCrNi, and binary FeNi alloys is investigated and the predictions compared with experiments and density functional theory calculations. By sampling over a large number of random configurations, we investigate the effect of compositional randomness on misfit volumes, energies of point defects and stacking faults, and the dislocation friction stresses experienced by moving edge and screw dislocations.

Materials Science↗
DOE OSTI2018

Towards nanoscale electrical measurements in liquid by advanced KPFM techniques: a review

Fundamental mechanisms of energy storage, corrosion, sensing, and multiple biological functionalities are directly coupled to electrical processes and ionic dynamics at solid–liquid interfaces. In many cases, these processes are spatially inhomogeneous taking place at grain boundaries, step edges, point defects, ion channels, etc and possess complex time and voltage dependent dynamics. This necessitates time-resolved and real-space probing of these phenomena. In this review, we discuss the applications of force-sensitive voltage modulated scanning probe microscopy (SPM) for probing electrical phenomena at solid–liquid interfaces. We first describe the working principles behind electrostatic and Kelvin probe force microscopies (EFM & KPFM) at the gas–solid interface, review the state of the art in advanced KPFM methods and developments to (i) overcome limitations of classical KPFM, (ii) expand the information accessible from KPFM, and (iii) extend KPFM operation to liquid environments. We briefly discuss the theoretical framework of electrical double layer (EDL) forces and dynamics, the implications and breakdown of classical EDL models for highly charged interfaces or under high ion concentrations, and describe recent modifications of the classical EDL theory relevant for understanding nanoscale electrical measurements at the solid–liquid interface. We further review the latest achievements in mapping surface charge, dielectric constants, and electrodynamic and electrochemical processes in liquids. Lastly, we outline the key challenges and opportunities that exist in the field of nanoscale electrical measurements in liquid as well as providing a roadmap for the future development of liquid KPFM.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Ta, Ti and Hf effects on Nb 3 Sn high-field performance: temperature-dependent dopant occupancy and failure of Kramer extrapolation

The increasing demand for improving the high-field (16-22 T) performance of Nb 3 Sn conductors requires a better understanding of the properties of modern wires much closer to irreversibility field, H Irr . In this study we investigated the impact of Ta, Ti and Hf doping on the high-field pinning properties, the upper critical field, H c2 , and H Irr . We found that the pinning force curves of commercial Ti and Ta doped wires at different temperatures do not scale and that the Kramer extrapolation, typically used by magnet designers to estimate high-field critical current density and magnet operational margins from lower field data, is not reliable and significantly overestimates the actual H Irr . In contrast, new laboratory scale conductors made with Nb-Ta-Hf alloy have improved high-field J c performance and, despite contributions by both grain boundary and point defect pinning mechanisms, have more predictable high-field behavior. Using Extended X-ray Absorption Fine Structure spectroscopy, EXAFS, we found that for the commercial Ta and Ti doped conductors, the Ta site occupancy in the A15 structure gradually changes with the heat treatment temperature whereas Ti is always located on the Nb site with clear consequences for H c2 . Finally, this work reveals the still limited understanding of what determines H c2 , H Irr and the high-field J c performance of Nb 3 Sn and the complexity of optimizing these conductors so that they can reach their full potential for high-field applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides

Abstract Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has been quite challenging with controversial conclusions despite the extensive literature in the past decade. Using first-principles calculations, we revisit the role of chalcogen vacancies and hydrogen impurity in bulk TMDs, reporting formation energies and thermodynamic and optical transition levels. We show that the S vacancy can explain recently observed cathodoluminescence spectra of MoS 2 flakes and predict similar optical levels in the other TMDs. In the case of the H impurity, we find it more stable sitting on an interstitial site in the Mo plane, acting as a shallow donor, and possibly explaining the often observed n-type conductivity in some TMDs. We also predict the frequencies of the local vibration modes for the H impurity, aiding its identification through Raman or infrared spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Abstract Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

Harmon, K. J. (ORCID:0000000164277971)↗
DOE OSTI2023

Microstructural Characterization of Ion Irradiated ODS MA956 Alloy

Oxide Dispersion Strengthened (ODS) alloys are considered as promising nuclear materials for the next generation advanced nuclear reactors due to their improved elevated temperature mechanical properties and radiation damage resistance. MA956 is a commercial ODS alloy with superior oxidation resistance and creep strength at elevated temperatures. The improved properties for ODS alloys can be attributed to the presence of dispersed nanosized oxide particles. These oxide particles can act as barriers to dislocation motion and provide additional sinks and sites for point defect recombination. Hence, their stability can greatly affect the properties of the irradiated ODS alloys. Besides, irradiation will induce defects into the ODS alloys, and these defects can develop further as irradiation dose increases. Furthermore, the defects propagation can significantly undermine the mechanical properties of the bulk materials, resulting in irradiation hardening and lower ductility. Therefore, it is necessary to have a good understanding of the defect’s evolution with irradiation. Hence, efforts are ongoing to understand the effect of ion irradiation on ODS MA956 with emphasis on oxide particles and evolution of defects as a function of dose (2.5, 50 and 100 dpa).

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2021

Passive Low-Energy Nuclear-Recoil Detection with Color Centers

Crystal-damage events such as tracks and point defects have been used to record and detect radiation for a long time and recently they have been proposed as a means for dark-matter detection. Color centers can be read out optically and we propose a scheme based on selective plane illumination microscopy for micrometer-scale imaging of large volumes corresponding to kilogram mass detectors. This class of detectors would be passive and would operate at room temperature and we call this the passive low-energy optical color-center nuclear-recoil (PALEOCCENE) detection method. We apply these concepts to the detection of reactor neutrinos using coherent elastic neutrino nucleus scattering (CE ν NS). Crystal-damage formation energies are intrinsically on the order of 25 eV, resulting in similarly low nuclear-recoil thresholds. Furthermore, this would enable the observation of reactor-neutrino CE ν NS with detectors as small as 10 g. Additionally, a competitive search for spin-dependent dark-matter scattering down to a dark-matter mass of 0.3 GeV could be possible. Passive crystal detectors might also be attractive for nuclear-nonproliferation safeguards if used to monitor reactor power and to put limits on plutonium production. The passive nature and small footprint of the proposed detectors implies that these might fit well within accepted reactor-safeguards operations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Determination of rutile transition metal oxide (110) surface terminations by scanning tunneling microscopy contrast reversal

The surfaces of rutile transition-metal oxides (TMO 2 ) are widely investigated for catalysis, photoelectrochemical solar cells, memristors, and supercapacitors, but their structures have remained controversial. Here we employ density functional theory to predict that a universal behavior of metallic TMO 2 surfaces, i.e., the stoichiometric TMO 2 surfaces, exhibit a contrast reversal in simulated scanning tunneling microscopy (STM) images at different scanning biases. The predictions are verified by experimental STM imaging of RuO 2 (110) surfaces and this feature is shown to enable accurate determinations of the TMO 2 (110) surface structures under various conditions. This research provides different insights into the electronic properties of TMO 2 (110) surfaces and offers an effective method to directly map the surface structure and point defects using bias-dependent STM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Ion irradiation induced crystalline disorder accelerates interfacial phonon conversion and reduces thermal boundary resistance

Traditional understanding of the thermal boundary resistance (TBR) across solid-solid interfaces posits that the vibrational densities of states overlap between materials dictates interfacial energy transport, with phonon scattering occurring at the interface. Using atomistic simulations, we show a mechanism for control of TBR; point defects near an interface can lead to both short- and midrange disorder, accelerating the conversion of vibrational energy between bulk and interfacial modes, ultimately reducing the TBR. In conclusion, we experimentally demonstrate this reduction through ion irradiation of gallium nitride and subsequently measuring the TBR across Al/GaN interfaces.

Pfeifer, Thomas W.↗
DOE OSTI2024

Nanoscale structural correlations in a model cuprate superconductor

Understanding the extent and role of inhomogeneity is a pivotal challenge in the physics of cuprate superconductors. While it is known that structural and electronic inhomogeneity is prevalent in the cuprates, it has proven difficult to disentangle compound-specific features from universally relevant effects. Here, in this study, we combine advanced neutron and x-ray diffuse scattering with numerical modeling to obtain insight into bulk structural correlations in HgBa 2 ⁢ CuO 4+δ . This cuprate exhibits a high optimal transition temperature of nearly 100 K, pristine charge-transport behavior, and a simple average crystal structure without long-range structural instabilities, and is therefore uniquely suited for investigations of intrinsic inhomogeneity. We uncover diffuse reciprocal-space patterns that correspond to prominent nanoscale correlations of atomic displacements perpendicular to the CuO 2 planes. The real-space nature of the correlations is revealed through three-dimensional pair distribution function analysis and complementary numerical refinement. We find that relative displacements of ionic and CuO 2 layers play a crucial role, and that the structural inhomogeneity is not directly caused by the presence of conventional point defects. The observed correlations are therefore intrinsic to HgBa 2 ⁢ CuO 4+δ , and thus likely important for the physics of cuprates more broadly. It is possible that the structural correlations are closely related to the unusual superconducting fluctuations and Mott-localization in these complex oxides. As advances in scattering techniques yield increasingly comprehensive data, the experimental and analysis tools developed here for large volumes of diffuse scattering data can be expected to aid future investigations of a wide range of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗