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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

We report the interface characterization of Al{sub 2}O{sub 3}/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al{sub 2}O{sub 3}/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D{sub it} in MOS structures, D{sub it} in the device with AlN was determined to be in the range of 10{sup 11}–10{sup 12 }eV{sup −1 }cm{sup −2}, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Suppressing Phase Segregation and Improving Stability in Mixed-Halide Perovskites through Spinel Oxide-Directed Epitaxy

Mixed-cation mixed-halide perovskite compositions are essential for achieving the required bandgaps for high-efficiency multijunction photovoltaics, yet their stability remains limited by interfacial defects, phase segregation, and degradation. Here, we introduce spinel oxides as a new family of lattice-matched substrates that enable crystalline, phase-pure, compositionally-uniform, bromide-rich perovskite film growth. The effect of spinel oxides is two-fold: reducing defects at the bottom interface by templating film growth and inducing beneficial compressive strain through mismatch-dependent substrate-perovskite lattice coupling. Spinel oxide substrates facilitate growth of highly crystalline films and eliminate detrimental secondary phases across thicknesses. Using grazing incidence X-ray diffraction, X-ray fluorescence, cathodoluminescence–scanning electron microscopy, cryogenic photoluminescence, and density functional theory, we reveal that Mg-halide bonds at the bottom interface induce lattice mismatch-dependent compressive strain that suppresses halide segregation and further reduces defect formation. In addition, films grown on spinel oxides maintain over 87% of the perovskite phase after 12 h under 100% relative humidity, as monitored by in situ grazing incidence wide-angle X-ray scattering (GIWAXS), compared to less than 70% for control samples. This work extends lattice matching from vapor-deposited epitaxial semiconductors to solution-processed halide perovskites to establish a broadly applicable strategy for defect suppression, phase homogenization, and long-term stability. Based on the fundamental science explored here, we set the stage for the development of lattice-matched spinel oxide charge transport layers to be integrated into perovskite solar cells and other optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Solid phase epitaxial regrowth of (001) anatase titanium dioxide

The growing interest in metal oxide based semiconductor technologies has driven the need to produce high quality epitaxial films of one metal oxide upon another. Largely unrecognized in synthetic efforts is that some metal oxides offer strongly polar surfaces and interfaces that require electrostatic stabilization to avoid a physically implausible divergence in the potential. The present work examines these issues for epitaxial growth of anatase TiO{sub 2} on strontium titanate (001). Solid phase epitaxial regrowth yields only the (001) facet, while direct crystalline growth by atomic layer deposition yields both the (112) and (001). The presence of amorphous TiO{sub 2} during regrowth may provide preferential stabilization for formation of the (001) facet.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Interface properties and built-in potential profile of a LaCr O 3 / SrTi O 3 superlattice determined by standing-wave excited photoemission spectroscopy

LaCrO 3 (LCO)/SrTiO 3 (STO) heterojunctions are intriguing due to a polar discontinuity along [001], exhibiting two distinct and controllable charged interface structures [(LaO) + /(TiO 2 ) 0 and (SrO) 0 /(CrO 2 ) - ] with induced polarization, and a resulting depth-dependent potential. In this study, we have used soft- and hard-x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to quantitatively determine the elemental depth profile, interface properties, and depth distribution of the polarization-induced built-in potentials. We observe an alternating charged interface configuration: a positively charged (LaO) + /(TiO 2 ) 0 intermediate layer at the LCO top /STO bottom interface and a negatively charged (SrO) 0 /(CrO 2 ) - intermediate layer at the STO top /LCO bottom interface. Using core-level SW data, we have determined the depth distribution of species, including through the interfaces, and these results are in excellent agreement with scanning transmission electron microscopy and electron energy-loss spectroscopy mapping of local structure and composition. SW-XPS also enabled deconvolution of the LCO and STO contributions to the valence-band (VB) spectra. Using a two-step analytical approach involving first SW-induced core-level binding-energy shifts and then VB modeling, the variation in potential across the complete superlattice is determined in detail. As a result, this potential is in excellent agreement with density functional theory models, confirming this method as a generally useful tool for interface studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Inverse iron oxide/metal catalysts from galvanic replacement

Key chemical transformations require metal and redox sites in proximity at interfaces; however, in traditional oxide-supported materials, this requirement is met only at the perimeters of metal nanoparticles. We report that galvanic replacement can produce inverse FeO x /metal nanostructures in which the concentration of oxide species adjoining metal domains is maximal. The synthesis involves reductive deposition of rhodium or platinum and oxidation of Fe 2+ from magnetite (Fe 3 O 4 ). We discovered a parallel dissolution and adsorption of Fe 2+ onto the metal, yielding inverse FeO x -coated metal nanoparticles. This nanostructure exhibits the intrinsic activity in selective CO 2 reduction that simple metal nanoparticles have only at interfaces with the support. By enabling a simple way to control the surface functionality of metal particles, our approach is not only scalable but also enables a versatile palette for catalyst design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Metal oxide nanorod arrays on monolithic substrates

A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can include a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Microscale Electrochemical Corrosion of Uranium Oxide Particles

Understanding the corrosion of spent nuclear fuel is important for the development of long-term storage solutions. However, the risk of radiation contamination presents challenges for experimental analysis. Adapted from the system for analysis at the liquid–vacuum interface (SALVI), we developed a miniaturized uranium oxide (UO 2 )-attached working electrode (WE) to reduce contamination risk. To protect UO 2 particles in a miniatured electrochemical cell, a thin layer of Nafion was formed on the surface. Atomic force microscopy (AFM) shows a dense layer of UO 2 particles and indicates their participation in electrochemical reactions. Particles remain intact on the electrode surface with slight redistribution. X-ray photoelectron spectroscopy (XPS) reveals a difference in the distribution of U(IV), U(V), and U(VI) between pristine and corroded UO 2 electrodes. The presence of U(V)/U(VI) on the corroded electrode surface demonstrates that electrochemically driven UO 2 oxidation can be studied using these cells. Our observations of U(V) in the micro-electrode due to the selective semi-permeability of Nafion suggest that interfacial water plays a key role, potentially simulating a water-lean scenario in fuel storage conditions. This novel approach offers analytical reproducibility, design flexibility, a small footprint, and a low irradiation dose, while separating the α-effect. This approach provides a valuable microscale electrochemical platform for spent fuel corrosion studies with minimal radiological materials and the potential for diverse configurations.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2014

Spectroscopic ellipsometry determination of the optical constants of titanium-doped WO{sub 3} films made by co-sputter deposition

Titanium (Ti) doped tungsten oxide (WO{sub 3}) thin films were grown by co-sputter deposition of W and Ti metal targets. The sputtering powers to the W and Ti were kept constant at 100 W and 50 W, respectively, while varying the growth temperature (T{sub s}) in the range of 25–400 °C. The structural quality of Ti-doped WO{sub 3} films is dependent on T{sub s}. Ti-doped WO{sub 3} films grown at T{sub s} < 400 °C were amorphous. A temperature of 400 °C is critical to promote the structural order and formation of monoclinic, nanocrystalline films. The optical constants and their dispersion profiles determined from spectroscopic ellipsometry indicate that there is no significant inter-diffusion at the film-substrate interface for W-Ti oxide film growth of ∼40 nm. The index refraction (n) at λ = 550 nm varies in the range of 2.15–2.40 with a gradual increase in T{sub s}. Lorentz-Lorenz analysis (n{sub (λ)} = 550 nm) of the data indicates the gradual improvement in the packing density coupled with structural transformation accounts for the observed optical quality of the Ti-doped WO{sub 3} films as a function of T{sub s}. A correlation between the growth conditions and optical constants is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Oxidation state and interfacial effects on oxygen vacancies in tantalum pentoxide

First-principles density-functional theory calculations are used to study the atomistic structure, structural energetics, and electron density near the O monovacancy (V{sub O}{sup n}; n = 0,1+,2+) in both bulk, amorphous tantalum pentoxide (a-Ta{sub 2}O{sub 5}), and also at vacuum and metallic Ta interfaces. We calculate multivariate vacancy formation energies to evaluate stability as a function of oxidation state, distance from interface plane, and Fermi energy. V{sub O}{sup n} of all oxidation states preferentially segregates at both Ta and vacuum interfaces, where the metallic interface exhibits global formation energy minima. In a-Ta{sub 2}O{sub 5}, V{sub O}{sup 0} is characterized by structural contraction and electron density localization, while V{sub O}{sup 2+} promotes structural expansion and is depleted of electron density. In contrast, interfacial V{sub O}{sup 0} and V{sub O}{sup 2+} show nearly indistinguishable ionic and electronic signatures indicative of a reduced V{sub O} center. Interfacial V{sub O}{sup 2+} extracts electron density from metallic Ta, indicating that V{sub O}{sup 2+} is spontaneously reduced at the expense of the metal. This oxidation/reduction behavior suggests careful selection and processing of both oxide layer and metal electrodes for engineering memristor device operation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Vertically Aligned and Continuous Nanoscale Ceramic–Polymer Interfaces in Composite Solid Polymer Electrolytes for Enhanced Ionic Conductivity

Among all solid electrolytes, composite solid polymer electrolytes, comprised of polymer matrix and ceramic fillers, garner great interest due to the enhancement of ionic conductivity and mechanical properties derived from ceramic–polymer interactions. Here, we report a composite electrolyte with densely packed, vertically aligned, and continuous nanoscale ceramic–polymer interfaces, using surface-modified anodized aluminum oxide as the ceramic scaffold and poly(ethylene oxide) as the polymer matrix. The fast Li + transport along the ceramic–polymer interfaces was proven experimentally for the first time, and an interfacial ionic conductivity higher than 10 –3 S/cm at 0 °C was predicted. The presented composite solid electrolyte achieved an ionic conductivity as high as 5.82 × 10 –4 S/cm at the electrode level. In conclusion, the vertically aligned interfacial structure in the composite electrolytes enables the viable application of the composite solid electrolyte with superior ionic conductivity and high hardness, allowing Li–Li cells to be cycled at a small polarization without Li dendrite penetration.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Oxidation mechanism in a refractory multiple-principal-element alloy at high temperature

Refractory multiple-principal-element alloys (RMPEAs) are promising structural materials to enable increased power efficiency in high-temperature oxidation environments, but the oxidation behavior and microstructures of the oxides, especially at the beginning of the oxidation, have received limited attention. Here, the oxidation mechanism in an equimolar W-Mo-Ta-Nb-V was investigated at 1300 °C and compared with the equimolar W-Mo-Ta-Nb alloy without V. The oxide scale on WMoTaNbV after 1 min exposure is shown to be composed of a degradation layer at the interface of the alloy/oxide, an initial oxide transition layer, followed by the main phase aggregate oxide layer, and an outermost oxide layer. At the early stage of oxidation, the absorption of oxygen by the RMPEA substrate forms a solid solution. Vanadium accelerates the initial degradation process as it forms VO. The initial oxidation-induced degradation of RMPEA follows a sequence governed by the free energy change accompanied by local element segregation. Liquid V-Mo oxides aggregate in the intermediate oxide layer. The inward growth of the oxide scale is controlled by the local composition changes, the orientation of the substrate, the crystal structure, and physical properties such as melting points of the oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Phase transformation of oxide film in zirconium alloy in high temperature hydrogenated water

The effect of the variation of the dissolved hydrogen concentration on the oxide phase transformation under high-temperature hydrogenated water conditions was investigated using in situ Raman spectroscopy. The Raman spectrum in 50 cm(3)/kg of dissolved hydrogen concentration indicated the formation of monoclinic and tetragonal zirconium oxide at the water-substrate interface. As the dissolved hydrogen concentration decreased to 30 cm(3)/kg, the Raman peaks corresponding to the zirconium oxide phase changed, indicating an oxide phase transformation. And, the results of SEM and TEM analyses were compared with those of in situ analyses obtained for the oxide structure formed on the zirconium alloy.

Kim, Taeho↗
DOE OSTI2018

Where does the sulphur go? Deactivation of a low temperature CO oxidation catalyst by sulphur poisoning

Sulphate formation, occurring preferentially at the CuO/CeOx-ZrOx interface, is responsible for the deactivation of low temperature CO oxidation catalysts. XRD, FTIR and isotope exchange experiments, as well as DFT calculations, reveal the poisoning mechanism of sulphate formation on the CeOx/ZrOx support material. JS, DM, TV and CHFP gratefully acknowledge the U.S. Department of Energy (DOE), Office of Energy Efficiency and Renewable Energy, Vehicle Technologies Program for the support of their participation in this work. Their studies were performed in the Environmental Molecular Sciences Laboratory (EMSL), a national scientific user facility sponsored by the DOE’s Office of Biological and Environmental Research, and located at Pacific Northwest National Laboratory (PNNL). PNNL is operated for the U.S. DOE by Battelle under contract number DE-AC05-76RL01830.

Szanyi, Janos↗
DOE OSTI2017

Large bipolaron density at organic semiconductor/electrode interfaces

Bipolaron states, in which two electrons or two holes occupy a single molecule or conjugated polymer segment, are typically considered to be negligible in organic semiconductor devices due to Coulomb repulsion between the two charges. Here we use charge modulation spectroscopy to reveal a bipolaron sheet density >10 10 cm –2 at the interface between an indium tin oxide anode and the common small molecule organic semiconductor N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine. We find that the magnetocurrent response of hole-only devices correlates closely with changes in the bipolaron concentration, supporting the bipolaron model of unipolar organic magnetoresistance and suggesting that it may be more of an interface than a bulk phenomenon. These results are understood on the basis of a quantitative interface energy level alignment model, which indicates that bipolarons are generally expected to be significant near contacts in the Fermi level pinning regime and thus may be more prevalent in organic electronic devices than previously thought.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Metal foils with ordered crystal structure and method for producing metal foils

A method for producing a metal foil comprising depositing metal onto an oxidizable substrate to form a metal film on the substrate; oxidizing the substrate at an interface between the metal film and the substrate; and removing the metal film from the substrate to yield a metal foil. A method for forming a thin metal film comprising pre-polarizing a single-crystal Si substrate by application of a potential which is negative of a potential at which Si oxidizes, which pre-polarization occurs in the presence of metal ions to form metal growth nucleation sites on the substrate, followed by application of a potential at which both oxidation of Si and electrodeposition of the metal occur to grow the metal film and oxidize the Si to SiOx, which potential is more positive than the potential applied in the pre-polarization step.

Switzer, Jay A.↗