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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

High efficiency GaP power conversion for Betavoltaic applications

AstroPower is developing a gallium phosphide (GaP) based energy converter optimized for radio luminescent light-based power supplies. A 'two-step' or 'indirect' process is used where a phosphor is excited by radioactive decay products to produce light that is then converted to electricity by a photovoltaic energy converter. This indirect conversion of beta-radiation to electrical energy can be realized by applying recent developments in tritium based radio luminescent (RL) light sources in combination with the high conversion efficiencies that can be achieved under low illumination with low leakage, gallium phosphide based devices. This tritium to light approach is inherently safer than battery designs that incorporate high activity radionuclides because the beta particles emitted by tritium are of low average energy and are easily stopped by a thin layer of glass. GaP layers were grown by liquid phase epitaxy and p/n junction devices were fabricated and characterized for low light intensity power conversion. AstroPower has demonstrated the feasibility of the GaP based energy converter with the following key results: 23.54 percent conversion efficiency under 968 muW/sq cm 440 nm blue light, 14.59 percent conversion efficiency for 2.85 muW/sq cm 440 nm blue light, and fabrication of working 5 V array. We have also determined that at least 20 muW/sq cm optical power is available for betavoltaic power systems. Successful developments of this device is an enabling technology for low volume, safe, high voltage, milliwatt power supplies with service lifetimes in excess of 12 years.

Sims, Paul E.↗
NASA NTRS1994

From neural-based object recognition toward microelectronic eyes

Engineering neural network systems are best known for their abilities to adapt to the changing characteristics of the surrounding environment by adjusting system parameter values during the learning process. Rapid advances in analog current-mode design techniques have made possible the implementation of major neural network functions in custom VLSI chips. An electrically programmable analog synapse cell with large dynamic range can be realized in a compact silicon area. New designs of the synapse cells, neurons, and analog processor are presented. A synapse cell based on Gilbert multiplier structure can perform the linear multiplication for back-propagation networks. A double differential-pair synapse cell can perform the Gaussian function for radial-basis network. The synapse cells can be biased in the strong inversion region for high-speed operation or biased in the subthreshold region for low-power operation. The voltage gain of the sigmoid-function neurons is externally adjustable which greatly facilitates the search of optimal solutions in certain networks. Various building blocks can be intelligently connected to form useful industrial applications. Efficient data communication is a key system-level design issue for large-scale networks. We also present analog neural processors based on perceptron architecture and Hopfield network for communication applications. Biologically inspired neural networks have played an important role towards the creation of powerful intelligent machines. Accuracy, limitations, and prospects of analog current-mode design of the biologically inspired vision processing chips and cellular neural network chips are key design issues.

Sheu, Bing J.↗
NASA NTRS1995

Ring-plane traveling-wave tube slow-wave circuit design simulations at V-Band frequencies

The V-Band frequency range of 59-64 GHz is a region of the millimeter-wave spectrum that has been designated for intersatellite communications. As a first effort to develop a high-efficiency V-band TWT, variations on a ring-plane slow-wave circuit were computationally investigated to develop an alternative to the more conventional ferruled coupled-cavity circuit. The ring-plane circuit was chosen because of its high interaction impedance, large beam aperture, and excellent thermal dissipation properties. Despite the high-power capabilities of the ring-plane TWT, disadvantages of low bandwidth and high voltage requirements have until now prevented its acceptance outside the laboratory. In this paper, we use the three-dimensional electromagnetic simulation code MAFIA to investigate methods of increasing the bandwidth and lowering the operating voltage. Dispersion, impedance, and attenuation calculations for various geometric variations and loading distributions were performed. Based on the results of the variations, a circuit termed the finned-ladder TWT slowwave circuit was designed and is compared here to the scaled ring-plane prototype and the conventional ferruled coupled-cavity TWT circuit over the V-band frequency range.

Kory, Carol L.↗
NASA NTRS1994

Novel high-gain, improved-bandwidth, finned-ladder V-band Traveling-Wave Tube slow-wave circuit design

The V-band frequency range of 59-64 GHz is a region of the millimeter-wave spectrum that has been designated for inter-satellite communications. As a first effort to develop a high-efficiency V-band Traveling-Wave Tube (TWT), variations on a ring-plane slow-wave circuit were computationally investigated to develop an alternative to the more conventional ferruled coupled-cavity circuit. The ring-plane circuit was chosen because of its high interaction impedance, large beam aperture, and excellent thermal dissipation properties. Despite these advantages, however, low bandwidth and high voltage requirements have, until now, prevented its acceptance outside the laboratory. In this paper, the three-dimensional electrodynamic simulation code MAFIA (solution of MAxwell's Equation by the Finite-Integration-Algorithm) is used to investigate methods of increasing the bandwidth and lowering the operating voltage of the ring-plane circuit. Calculations of frequency-phase dispersion, beam on-axis interaction impedance, attenuation and small-signal gain per wavelength were performed for various geometric variations and loading distributions of the ring-plane TWT slow-wave circuit. Based on the results of the variations, a circuit termed the finned-ladder TWT slow-wave circuit was designed and is compared here to the scaled prototype ring-plane and a conventional ferruled coupled-cavity TWT circuit over the V-band frequency range. The simulation results indicate that this circuit has a much higher gain, significantly wider bandwidth, and a much lower voltage requirement than the scaled ring-plane prototype circuit, while retaining its excellent thermal dissipation properties. The finned-ladder circuit has a much larger small-signal gain per wavelength than the ferruled coupled-cavity circuit, but with a moderate sacrifice in bandwidth.

Kory, Carol L.↗
NASA NTRS1996

Heavy Ion and Proton Induced Single Event Transients in Linear Devices

This paper presents a display of heavy-ion and proton-induced single event transients for selected linear devices. The transient vital signs are serious; low LET threshold, high voltage amplitude and extended pulse duration (microsecs.).

heavy ions ions transients linear devices LET thre↗
NASA NTRS2005

Nanowire Thermoelectric Devices

Nanowire thermoelectric devices, now under development, are intended to take miniaturization a step beyond the prior state of the art to exploit the potential advantages afforded by shrinking some device features to approximately molecular dimensions (of the order of 10 nm). The development of nanowire-based thermoelectric devices could lead to novel power-generating, cooling, and sensing devices that operate at relatively low currents and high voltages. Recent work on the theory of thermoelectric devices has led to the expectation that the performance of such a device could be enhanced if the diameter of the wires could be reduced to a point where quantum confinement effects increase charge-carrier mobility (thereby increasing the Seebeck coefficient) and reduce thermal conductivity. In addition, even in the absence of these effects, the large aspect ratios (length of the order of tens of microns diameter of the order of tens of nanometers) of nanowires would be conducive to the maintenance of large temperature differences at small heat fluxes. The predicted net effect of reducing diameters to the order of tens of nanometers would be to increase its efficiency by a factor of .3. Nanowires made of thermoelectric materials and devices that comprise arrays of such nanowires can be fabricated by electrochemical growth of the thermoelectric materials in templates that contain suitably dimensioned pores (10 to 100 nm in diameter and 1 to 100 microns long). The nanowires can then be contacted in bundles to form devices that look similar to conventional thermoelectric devices, except that a production version may contain nearly a billion elements (wires) per square centimeter, instead of fewer than a hundred as in a conventional bulk thermoelectric device or fewer than 100,000 as in a microdevice. It is not yet possible to form contacts with individual nanowires. Therefore, in fabricating a nanowire thermoelectric device, one forms contacts on nanowires in bundles of the order of 10-microns wide. The fill factor for the cross-section of a typical bundle is about 1/2. Nanowires have been grown in alumina templates with pore diameters of 100 and 40 nm.

Borshchevsky, Alexander↗
NASA NTRS2008

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Quantum Efficiency↗
NASA NTRS2011

Binary-Signal Recovery

Binary communication through long cables, opto-isolators, isolating transformers, or repeaters can become distorted in characteristic ways. The usual solution is to slow the communication rate, change to a different method, or improve the communication media. It would help if the characteristic distortions could be accommodated at the receiving end to ease the communication problem. The distortions come from loss of the high-frequency content, which adds slopes to the transitions from ones to zeroes and zeroes to ones. This weakens the definition of the ones and zeroes in the time domain. The other major distortion is the reduction of low frequency, which causes the voltage that defines the ones or zeroes to drift out of recognizable range. This development describes a method for recovering a binary data stream from a signal that has been subjected to a loss of both higher-frequency content and low-frequency content that is essential to define the difference between ones and zeroes. The method makes use of the frequency structure of the waveform created by the data stream, and then enhances the characteristics related to the data to reconstruct the binary switching pattern. A major issue is simplicity. The approach taken here is to take the first derivative of the signal and then feed it to a hysteresis switch. This is equivalent in practice to using a non-resonant band pass filter feeding a Schmitt trigger. Obviously, the derivative signal needs to be offset to halfway between the thresholds of the hysteresis switch, and amplified so that the derivatives reliably exceed the thresholds. A transition from a zero to a one is the most substantial, fastest plus movement of voltage, and therefore will create the largest plus first derivative pulse. Since the quiet state of the derivative is sitting between the hysteresis thresholds, the plus pulse exceeds the plus threshold, switching the hysteresis switch plus, which re-establishes the data zero to one transition, except now at the logic levels of the receiving circuit. Similarly, a transition from a one to a zero will be the most substantial and fastest minus movement of voltage and therefore will create the largest minus first derivative pulse. The minus pulse exceeds the minus threshold, switching the hysteresis switch minus, which re-establishes the data one to zero transition. This innovation has a large increase in tolerance for the degradation of the binary pattern of ones and zeroes, and can reject the introduction of noise in the form of low frequencies that can cause the voltage pattern to drift up or down, and also higher frequencies that are beyond the recognizable content in the binary transitions.

Griebeler, Elmer L.↗
NASA NTRS1974

High voltage power Schottky diodes

Calculations of the low frequency rectification efficiency of power Schottky diodes show that silicon Schottky rectifiers have lower losses than silicon p-n junctions for all voltage applications up to approximately 150 volts. These calculations are presented. Large area Schottky diodes have been fabricated which exhibit near ideal reverse leakage at 100 C out to approximately 100 volts and which have current capability of 100 A. Fabrication details and performance data are presented.

Cordes, L. F.↗
NASA NTRS1986

Overcash, D. R.

The objectives of this investigation were to determine the characteristics of semiconductor devices at low temperatures. The output characteristics of several currently available semiconductor devices and devices fabricated at Marshall Space Flight Center were measured over a range of gate voltages. Large variations in low-temperature performance, not only from type to type, but from field effect transistor (FET) to FET of the same type were obtained. By increasing the carrier concentrations at low temperatures through extra heavy doping, metal oxide semiconductor field effect transistor (MOSFET) device was fabricated that operated at 4.2K. To verify the low-temperature operation of a heavily doped device, this procedure was repeated. Their noise spectrum was analyzed at 4.2K. Suggestions were made as to possible fabrication methods, techniques, and other semiconductor materials that might improve the device charactersitics at low temperatures. A procedure for using an electric field to drift dopants through the insulating oxide to produce a very thin, heavily doped region under the gate of a MOSFET was initiated. Capacitance s a function of voltage plots was suggested as a method for determining the level of dopant drift.

Source record↗
DOE OSTI2020

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si 3 N 4 and Si etching

A material etching system was developed by combining beam electron injection from a direct current (DC) hollow-cathode (HC) electron source with the downstream reactive environment of a remote CF 4 /O 2 low temperature plasma. The energy of the injected beam electrons is controlled using an acceleration electrode biased positively relative to the HC Argon discharge. For an acceleration voltage greater than the ionization potential of Ar, the extracted primary electrons can produce a secondary plasma in the process chamber. We characterized the properties of the secondary plasma by performing Langmuir probe measurements of the electron energy probability function (EEPF) 2.5 cm below the extraction ring. The data indicate the existence of two major groups of electrons, including electrons with a primary beam electron energy which varies as the acceleration voltage is varied, along with low energy electrons produced by ionization of the Ar gas atoms in the process chamber by the injected beam electrons. When combining the HC Ar beam electron with a remote CF 4 /O 2 electron cyclotron wave resonance (ECWR) plasma, the EEPF of both the low energy plasma electron and beam electron components decreases. Additionally, we studied surface etching of Si3N4 and poly-crystalline Si (poly-Si) thin films as a function of process parameters, including the acceleration voltage (0-70 V), discharge current of the HC discharge (1-2 A), pressure (2- 100 mTorr), source to substrate distance (2.5 to 5 cm), and feed gas composition (with or without CF 4 /O 2 ). The direction of the incident beam electrons was perpendicular to the surface. Si 3 N 4 and poly-crystalline silicon etching are seen and indicate an electronneutral synergy effect. No/little remote plasma spontaneous etching was observed for the conditions used in this study, and the etching is confined to the substrate area irradiated by the injected beam electrons. The electron etched Si 3 N 4 surface etching rate profile distribution is confined within a ~30 mm diameter circle, which is slightly broader than the area for which poly-Si etching is seen, and coincides closely with the spatial profile of beam electrons as determined by the Langmuir probe measurements. The magnitude of poly-Si etching rate is by a factor of two times smaller than the Si 3 N 4 etching rate. In this paper, we discuss possible explanations of the data and the role of surface charging.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Power management for wireless nodes

A system includes a rectifier having an input configured to receive a variable AC input voltage and convert the AC input voltage to a rectified output voltage. A power converter has an input coupled to receive the rectified output voltage and to provide a DC supply voltage at an output thereof. A low drop-out regulator has an input coupled to receive the supply voltage and is configured provide a regulated voltage. A sensor is coupled to receive the regulated voltage as a power source and is configured to sense a condition and provide sensor data indicative of the sensed condition.

Feng, Philip X. L.↗
DOE OSTI2023

Voltage-dependent excitation dynamics in UV-absorbing organic photovoltaics with efficient charge transfer exciton emission

Intermolecular charge-transfer excitons play a central role in determining the performance of organic solar cells as their voltage-dependent formation, dissociation, and recombination dynamics contribute to photocurrent generation, radiative/nonradiative voltage losses, and photovoltaic fill factor. Here, we explore the properties of brightly-emitting wide energy gap (>2 eV) charge transfer excitons by measuring the voltage-dependent photoluminescence, photocurrent, and ultrafast pump–probe transient absorption spectra of organic solar cells employing five UV-absorbing donor molecules that differ only by the length of the oligophenylene or acene group at their core. We find that organic solar cells with a strong correlation between their voltage-dependent photocurrent and charge-transfer exciton photoluminescence have low photovoltaic fill factors as they require voltage to facilitate efficient charge-transfer exciton dissociation. In contrast, solar cells that are efficient can readily generate charges without an applied field and have a separate population of tightly-bound charge-transfer excitons that are responsible for emission. Furthermore, considering that the sum of all excitation loss rates (i.e., recombination and charge extraction) must be equal to the excitation generation rate in the steady state, these voltage-dependent data allow us to solve for the voltage-dependent fate of all excitations in the solar cells and estimate upper and lower bounds for geminate and non-geminate recombination, respectively.

14 SOLAR ENERGY↗
DOE OSTI2022

Magnetic cores with high reluctance differences in flux paths

Embodiment of the present invention includes a magnetic structure and a magnetic structure used in a direct current (DC) to DC energy converter. The magnetic structure has an E-core and a plate, with the plate positioned in contact or in near contact with the post surfaces of the E-core. The E-core has a base, a no-winding leg, a transformer leg, and an inductor leg. The no-winding leg, the transformer leg, and the inductor leg are perpendicular and magnetically in contact with the base. The plate is a flat slab with lateral dimensions generally larger than its thickness. The plate has a plate nose that overlaps a top no-winding leg surface of the no-winding leg with a no-winding gap area to form a no-winding gap with a no-winding gap reluctance. The plate also has a plate end that overlaps a top inductor leg surface of the inductor leg with an inductor gap area to form an inductor gap with an inductor gap reluctance. In some embodiments, e.g., where the duty cycle is less than 50 percent, the inductor gap reluctance will be designed to be less than the no-winding gap reluctance. In these cases, the majority of the magnetic flux that passes through the transformer leg will return through the inductor leg, instead of through the no-winding leg. The inductor and no-winding gap reluctances can he adjusted, so that the electromotive force applied to a charge passing through the inductor will partially cancel the electromotive force applied by the transformer secondary. The gap reluctance ratio can be defined, so that the difference in secondary and inductor electromotive forces is equal to the output voltage defined by an optimal no-ripple duty cycle. In this way no changing current is required through the inductor to create a dI/dt inductive voltage drop across the output inductor. Zero output current ripple is achieved.Various embodiments of the plate, plate shape, and no-winding leg are disclosed. These embodiments allow achieving a high ratio of no-winding gap reluctance to inductor gap reluctance, for practical, affordable magnetic material structures and aspect ratios. A high gap reluctance ratio enables zero output current ripple for the high transformer turns ratios that are needed to achieve high input to output voltage ratios. The embodiments therefore allow achieving low output current ripple for 48 V or higher input voltages, 1 V or lower output voltages, and high output currents.

Yao, Yuan↗
NASA NTRS2011

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

Patterson, Richard L.↗
DOE OSTI2020

Energy-Storage Fed Smart Inverters for Mitigation of Voltage Fluctuations in Islanded Microgrids

The continuous integration of intermittent low-carbon energy resources makes islanded microgrids vulnerable to voltage fluctuations. Besides, different dynamic response of synchronous-based and inverter-based distributed generation (DG) units can result in an instantaneous power imbalance between supply and demand during transients. As a result, the ac-bus voltage of microgrid starts oscillating which might have severe consequences such as blackouts. This paper modifies the conventional control scheme of battery energy storage systems (BESSs) to participate in improving the dynamic behavior of islanded microgrids by mitigating the voltage fluctuations. A piecewise linear-elliptic (PLE) droop is proposed and employed in BESS to achieve an enhanced voltage profile by injecting/absorbing reactive power during transients. In this way, the conventional inverter implemented in BESS turns into a smart inverter to cope with fast transients. Using the proposed approach in this paper, any linear droop curve with a specified coefficient can be replaced by a PLE droop curve. Compared with linear droop, an enhanced dynamic response is achieved by utilizing the proposed PLE droop. Case study results are presented using PSCAD/EMTDC to demonstrate the superiority of the proposed approach in improving the dynamic behavior of islanded microgrids.

Pilehvar, Mohsen S.↗
DOE OSTI2022

Paving Pathways Toward Long–Life Graphite/LiNi 0.5 Mn 1.5 O 4 Full Cells: Electrochemical and Interphasial Points of View

The high-voltage spinel cathode LiNi 0.5 Mn 1.5 O 4 (LNMO) with no cobalt and low nickel content is promising for lithium-ion batteries due to its high energy and power densities, good thermal stability, and low cost. However, its high operating voltage (≈4.7 V) results in a decomposition of the electrolyte, severe chemical crossover, and deterioration of electrode-electrolyte interphases (EEIs), hindering its practical viability. It is demonstrated here that by electrochemically pre-cycling the graphite in an electrolyte containing 30 wt.% fluoroethylene carbonate, a robust LiF-rich artificial solid electrolyte interphase can be constructed for surface protection; on the other hand, an electrochemical pre-lithiation of Fe-doped LNMO serves as a lithium source for graphite at a full-cell voltage of 2.6 V. As a result, the full cells with the as-modified electrodes deliver a high capacity of 129 mA h g –1 with an excellent capacity retention of 93% after 200 cycles, vastly outperforming the full cells with fresh electrodes (120 mA h g –1 initial capacity with 78% retention). Lastly, pathways toward long-life graphite||LNMO full cells are pictured based on the inspirations from the electrochemical modifications and in-depth analyses of the EEIs in this study.

36 MATERIALS SCIENCE↗
NASA NTRS2011

Miniaturized ultrafine particle sizer and monitor

An apparatus for measuring particle size distribution includes a charging device and a precipitator. The charging device includes a corona that generates charged ions in response to a first applied voltage, and a charger body that generates a low energy electrical field in response to a second applied voltage in order to channel the charged ions out of the charging device. The corona tip and the charger body are arranged relative to each other to direct a flow of particles through the low energy electrical field in a direction parallel to a direction in which the charged ions are channeled out of the charging device. The precipitator receives the plurality of particles from the charging device, and includes a disk having a top surface and an opposite bottom surface, wherein a predetermined voltage is applied to the top surface and the bottom surface to precipitate the plurality of particles.

Chen, Da-Ren↗