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A first-principles core-level XPS study on the boron impurities in germanium crystal
We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.
Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory
Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.
Microstructure, impurity and metal cap effects on Cu electromigration
Electromigration (EM) lifetimes and void growth of pure Cu, Cu(Mn) alloy, and pure Cu damascene lines with a CoWP cap were measured as a function of grain structure (bamboo, near bamboo, and polycrystalline) and sample temperature. The bamboo grains in a bamboo-polycrystalline grained line play the key role in reducing Cu mass flow. The variation in Cu grain size distribution among the wafers was achieved by varying the metal line height and wafer annealing process step after electroplating Cu and before or after chemical mechanical polishing. The Cu grain size was found to have a large impact on Cu EM lifetime and activation energy, especially for the lines capped with CoWP. The EM activation energy for pure Cu with a CoWP cap from near-bamboo, bamboo-polycrystalline, mostly polycrystalline to polycrystalline only line grain structures was reduced from 2.2 ± 0.2 eV, to 1.7 ± 0.1 eV, to 1.5 ± 0.1 eV, to 0.72 ± 0.05 eV, respectively. The effect of Mn in Cu grain boundary diffusion was found to be dependent on Mn concentration in Cu. The depletion of Cu at the cathode end of the Cu(Mn) line is preceded by an incubation period. Unlike pure Cu lines with void growth at the cathode end and hillocks at the anode end of the line, the hillocks grew at a starting position roughly equal to the Blech critical length from the cathode end of the Cu(Mn) polycrystalline line. The effectiveness of Mn on Cu grain boundary migration can also be qualitatively accounted for by a simple trapping model. The free migration of Cu atoms at grain boundaries is reduced by the presence of Mn due to Cu-solute binding. A large binding energy of 0.5 ± 0.1 eV was observed.
Diffusion and impurity segregation in hydrogen-implanted silicon carbide
Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H{sup +} implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 10{sup 16}, 1 × 10{sup 17}, or 2 × 10{sup 17} ion/cm{sup 2}, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 10{sup 16} O atoms/cm{sup 2} situated at a depth close to that of the peak of the implanted H{sup +}. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.
Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors
Recent experiments show that GaN/AlGaN high-electron-mobility transistors suffer from significant current collapse, which is caused by an increase in the concentration of traps with energy levels 0.5–0.6 eV below the conduction-band edge. This increase in trap concentration is consistent with thermally activated defect diffusion, but the responsible defect complexes have not been identified. It has been suggested that the defect complex may contain iron because of the proximity of the Fe-doped GaN substrate. Here, we report first-principles density-functional calculations of substitutional iron complexes, investigate their properties, and show that the Fe{sub Ga}-V{sub N} complex has properties that account for the observed degradation.
Density functional theory study of the influence of segregation of S or Fe impurities on electromigration in nano-grained copper interconnects
The reliability of the circuits in the modern microelectronic devices remains, during last decades, one of the key topics in research and gains an attention for improving the promising candidates for conductors. Improvement of materials for such applications can be obtained by both electronic and compositional optimization. Ab initio calculations using full potential linearized augmented plane wave method in density functional theory are applied to explain the reduction in electromigration effect in the vicinity of grain boundaries (GB) in nano-structured Cu due to the segregation of some additives to the GB. Several possible mechanisms are considered. It is demonstrated that S atoms segregated to GB of nano-structured Cu lead to the growth of effective mass of the electrons. This decreases the mobility of electrons in external electric field, and, correspondingly, the momentum that they may transfer to atoms in collisions. Fe atoms segregated to GB of Cu create new empty states at the top of the valance band. These non-occupied states may stimulate the current of holes when external electric field is applied to the system, creating the “hole wind” in the direction opposite to the current of electrons. Such “hole wind” will compensate the forces generated by the electron current and therefore will reduce the total momentum transfer between charge carriers and atoms. The calculated electron density maps show that S and Fe segregating to Cu GB increases the strength of covalent bonds reducing the diffusion of Cu atoms in the vicinity of GB.
Publisher’s Note: “Multi-energy x-ray detector calibration for Te and impurity density (nZ) measurements of MCF plasmas” [Rev. Sci. Instrum. 87, 11E320 (2016)]
Correction Original Article: ISSN: 0034-6748, Rev. Sci. Instrum. 87, (2016) This article was originally published online on 12 August 2016 with the fourth author’s name listed as “L. Delgado”. It should have been “L. Delgado-Aparicio”. The author’s name appears correctly above. All online versions of the article were corrected on 7 September 2016; the article is correct as it appears in the printed version of the journal.
Angular, temperature, and impurity effects on secondary electron emission from Ni(110)
Not Available
Utilization of outer-midplane collector probes with isotopically enriched tungsten tracer particles for impurity transport studies in the scrape-off layer of DIII-D (invited)
Triplet sets of replaceable graphite rod collector probes (CPs), each with collection surfaces on opposing faces and oriented normal to the magnetic field, were inserted at the outboard mid-plane of DIII-D to study divertor tungsten (W) transport in the Scrape-Off Layer (SOL). Each CP collects particles along field lines with different parallel sampling lengths (determined by the rod diameters and SOL transport) giving radial profiles from the main wall inward to R-R sep ~ 6 cm. The CPs were deployed in a first-of-a-kind experiment using two toroidal rings of distinguishable isotopically enriched, W-coated divertor tiles installed at 2 poloidal locations in the divertor. Post-mortem Rutherford backscatter spectrometry of the surface of the CPs provided areal density profiles of elemental W coverage. Higher W content was measured on the probe side facing along the field lines toward the inner target indicating higher concentration of W in the plasma upstream of the CP, even though the W-coated rings were in the outer target region of the divertor. Inductively coupled plasma mass spectroscopy validates the isotopic tracer technique through analysis of CPs exposed during L-mode discharges with the outer strike point on the isotopically enriched W coated-tile ring. The contribution from each divertor ring of W to the deposition profiles found on the mid-plane collector probes was able to be de-convoluted using a stable isotope mixing model. Furthermore the results provided quantitative information on the W source and transport from specific poloidal locations within the lower divertor region.
Characterization of injection and confinement improvement through impurity induced profile modifications on the Wendelstein 7-X stellarator
Pulsed injections of boron carbide granules into Wendelstein 7-X stellarator (W7-X) plasmas transiently increase the plasma stored energy and core ion temperatures above the reference W7-X experimental programs by up to 30%. In a series of 4 MW electron cyclotron resonance heating experiments, the PPPL Probe Mounted Powder Injector provided 50 ms bursts of 100 μm granules every 350 ms at estimated quantities ranging from approximately 1 mg/pulse to over 30 mg/pulse. For each injection, the stored energy was observed to initially drop and the radiated power transiently increased, while the radial electron density profile rose at the edge as material was assimilated. Once the injected boron carbide was fully absorbed, the density rise transitioned to the core while the stored energy increased above the previous baseline level by an amount linearly correlated with the injection quantity. During the injection, the ion temperature gradient steepened with peak core ion temperatures observed to increase from a nominal 1.7 keV to over 2.6 keV for the largest injection amounts. Enhanced performance is accompanied by a reversal of the radial electric field at ρ < 0.3, indicating that the core transport has switched to the ion root. These observations are suggestive of a change in transport and provide further evidence that externally induced profile modifications provide a possible path to enhanced W7-X performance metrics.
The role of H–H interactions and impurities on the structure and energetics of H/Pd(111)
Understanding hydrogen incorporation into palladium requires detailed knowledge of surface and subsurface structure and atomic interactions as surface hydrogen is being embedded. Using density functional theory (DFT), we examine the energies of hydrogen layers of varying coverage adsorbed on Pd(111). Here we find that H–H and H–Pd interactions promote the formation of the well-known ($\sqrt{3}$ x $\sqrt{3}$) phases but also favor an unreported (3 × 3) phase at high H coverages for which we present experimental evidence. We relate the stability of isolated H vacancies of the (3 × 3) phase to the need of H 2 molecules to access bare Pd before they can dissociate. Following higher hydrogen dosage, we observe initial steps of hydride formation, starting with small clusters of subsurface hydrogen. The interaction between H and Pd is complicated by the persistent presence of carbon at the surface. X-ray photoelectron spectroscopy experiments show that trace amounts of carbon, emerging from the Pd bulk despite many surface cleaning cycles, become mobile enough to repopulate the C-depleted surface at temperatures above 200 K. When exposed to hydrogen, these surface carbon atoms react to form benzene, as evidenced by scanning tunneling microscopy observations interpreted with DFT.
Effects of oxidation and impurities in lithium surfaces on the emitting wall plasma sheath
The use of lithium as a surface coating in fusion devices improves the plasma performance, but the change in the wall properties affects the secondary electron emission properties of the material. Lithium oxidizes easily, which drives the emission yield well above unity. We present here simulations demonstrating the change in the sheath structure from monotonic to the nonmonotonic space-charge limited sheath using an energy-dependent data-driven emission model, which self-consistently captures both secondary emission and backscattering populations. Increased secondary electron emission from the material has ramifications for the degradation and erosion of the wall. The results show that the oxidation leads to an increased electron energy flux into the wall and a reduced ion energy flux. The net transfer of energy to the surface is significantly greater for the oxidized case than for the pure lithium case. High backscattering rates of low-energy particles lead to a high re-emission rate at the wall.
Monte Carlo Analysis of Coolant Stream Impurity Gamma Emissions in Gas-Cooled Fast Reactors
It is well established that a rapid increase in the concentration of fission products in the reactor coolant stream can serve as an early indication of fuel failure. We use Monte Carlo simulations to investigate the feasibility of using several gamma detectors as diagnostic equipment to monitor the presence of major fission product isotopes in high-temperature gas-cooled reactor (HTGR) coolant streams for early detection of fuel failure and therefore the prevention of fuel failure conditions. Herein we model the response of high-purity germanium (HPGe), CdZnTe, NaI(Tl), and LaBr 3 (Ce) detectors of typical commercial sizes to the gamma emissions from nuclides expected to be found within the coolant stream of the Versatile Test Reactor (VTR) under development by the U.S. Department of Energy. The results indicate that for the 233- and 250-keV gamma rays from 133 Xe and 135 Xe, respectively, the 3σ detection criterion is met in under 1 min using a single HPGe detector. Changes in other spectral lines associated with Xe nuclides are detected within 1 h regardless of the choice of detector.
Effect of feedstock, impurities, and rancidity on likelihood of spontaneous combustion of oil and biodiesel
Not provided.
In–out impurity density asymmetry in the pedestal region of Alcator C-Mod
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