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At least 1,117 records · Page 62

Estimation of minority carrier diffusion lengths in InP/GaAs solar cells

Minority carrier diffusion length is one of the most important parameters affecting the solar cell performance. An attempt is made to estimate the minority carrier diffusion lengths is the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the experimental cell results measured at NASA Lewis under AMO (air mass zero) spectrum at 25 C. A 16 nm hole diffusion length in the emitter and a 0.42 micron electron diffusion length in the base gave very good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short current, open circuit voltage, and efficiency was studied. It is also observed that the front surface recombination velocity has very little influence on the cell performance. The poor output of heteroepitaxial cells is caused primarily by the large number of dislocations generated at the interfaces that propagate through the bulk indium phosphide layers. Cell efficiency as a function of dislocation density was calculated and the effect of improved emitter bulk properties on cell efficiency is presented. It is found that cells with over 16 percent efficiencies should be possible, provided the dislocation density is below 10(exp 6)/sq cm.

Jain, R. K.↗

Criteria for Realizing Room-Temperature Electrical Transport Applications of Topological Materials

The unusual electronic states found in topological materials can enable a new generation of devices and technologies, yet a long-standing challenge has been finding materials without deleterious parallel bulk conduction. This can arise either from defects or thermally activated carriers. In this study, the criteria that materials need to meet to realize transport properties dominated by the topological states, a necessity for a topological device, are clarified. This is demonstrated for 3D topological insulators, 3D Dirac materials, and 1D quantum anomalous Hall insulators, though this can be applied to similar systems. The key parameters are electronic bandgap, dielectric constant, and carrier effective mass, which dictate under what circumstances (defect density, temperature, etc.) the unwanted bulk state will conduct in parallel to the topological states. As these are fundamentally determined by the basic atomic properties, simple chemical arguments can be used to navigate the phase space to ultimately find improved materials. This will enable rapid identification of new systems with improved properties, which is crucial to designing new material systems and push a new generation of topological technologies.

36 MATERIALS SCIENCE↗

Structural differences existing in bulk and nanoparticles of Y{sub 2}Sn{sub 2}O{sub 7}: Investigated by experimental and theoretical methods

Present manuscript deals with the structural changes associated with transformation of bulk Y{sub 2}Sn{sub 2}O{sub 7} into nanoparticles of Y{sub 2}Sn{sub 2}O{sub 7}. Nanoparticles of Y{sub 2}Sn{sub 2}O{sub 7} both undoped and Eu{sup 3+} doped, were prepared at a relatively low temperature (700 °C) and investigated for their structural and luminescence properties and compared them with that of bulk Y{sub 2}Sn{sub 2}O{sub 7} sample prepared by the solid-state method at 1300 °C. Significant distortion in geometry and electron density distribution around Y{sup 3+}/Eu{sup 3+} ions in nanoparticles are confirmed from the Rietveld refinement of the powder X-ray diffraction patterns and theoretical calculations based on the density functional theory (DFT). The SnO{sub 6} octahedron in Y{sub 2}Sn{sub 2}O{sub 7} is more expanded in nanoparticles compared to bulk. Iso-surface density distribution reveals that while bulk sample shows typical ionic feature in Y/Eu--O bonds, nanoparticle sample shows sharing of electron density along bond axis pertaining to covalent character. These inferences are further supported by the doped Eu{sup 3+} luminescence and calculated Ω{sub 2} and Ω{sub 4} parameters. - Graphical abstract: YO{sub 8} scalenohedron present in bulk and nanoparticles of Y{sub 2}Sn{sub 2}O{sub 7}.Variation of the electron density around Y{sup 3+} ions in YO{sub 8} polyhedron is also shown in bulk and nanoparticles of Y{sub 2}Sn{sub 2}O{sub 7}. The difference in the extent of ionic/covalent nature of the Y--O bond is clearly seen the contour plot of electron density. Highlights: ► YO{sub 8} scalenohedron is axially and equatorially distorted in Y{sub 2}Sn{sub 2}O{sub 7} nanoparticles. ► Enlargement of SnO{sub 6} octahedron in nanoparticles of Y{sub 2}Sn{sub 2}O{sub 7} compared to bulk. ► Less symmetric charge distribution around Y{sup 3+} ions in Y{sub 2}Sn{sub 2}O{sub 7} nanoparticles.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Quantitative relationship between polarization differences and the zone-averaged shift photocurrent

A relationship is derived between differences in electric polarization between bands and the “shift vector” that controls part of a material's bulk photocurrent, then demonstrated in several models. Electric polarization has a quantized gauge ambiguity and is normally observed at surfaces via the surface charge density, while shift current is a bulk property and is described by shift vector gauge invariant at each point in momentum space. They are connected because the same optical transitions that are described in shift currents pick out a relative gauge between valence and conduction bands. We also discuss subtleties arising when there are points at the Brillouin zone where optical transitions are absent. Finally, we conclude that two-dimensional materials with significant interband polarization differences should have high bulk photocurrent, meaning that the modern theory of polarization can be used as a straightforward way to search for bulk photovoltaic material candidates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic structure and surface properties of MgB 2 (0001) upon oxygen adsorption [Electronic structure and surface properties of MgB2: oxygen adsorption on MgB2(0001)]

Here, we use density-functional theory to investigate the bulk and surface properties of MgB 2 . The unique bonding structure of MgB 2 is investigated by Bader's atoms-in-molecules, charge density difference, and occupancy projected band structure analyses. Oxygen adsorption on the charge-depleted surfaces of MgB 2 is studied by a surface potential energy mapping method, reporting a complete map including low-symmetry binding sites. The B-terminated MgB 2 (0001) demonstrates reconstruction of the graphenelike B layer, and the reconstructed geometry exposes a threefold site of the subsurface Mg, making it accessible from the surface. Detailed reconstruction mechanisms are studied by simulated annealing method based on ab initio molecular dynamics and nudged elastic band calculations. The surface clustering of B atoms significantly modifies the B 2p states to occupy low energy valence states. The present paper emphasizes that a thorough understanding of the surface phase may explain an apparent inconsistency in the experimental surface characterization of MgB 2 . Furthermore, these results suggest that the surface passivation can be an important technical challenge when it comes to development of a superconducting device using MgB 2 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Strangeness-changing rates and hyperonic bulk viscosity in neutron star mergers

In this paper we present a computation of the rates of strangeness-changing processes and the resultant bulk viscosity in matter at the densities and temperatures typical of neutron star mergers. To deal with the high temperature in this environment we go beyond the Fermi surface approximation in our rate calculations and numerically evaluate the full phase space integral. Here, we include processes where quarks move between baryons via meson exchange: these have generally been omitted in previous analyses but provide the dominant contribution to the rates of strangeness-changing processes and the bulk viscosity. The calculation of these rates is an essential step towards any calculation of dissipation mechanisms in hyperonic matter in mergers. As one application, we calculate the dissipation times for density oscillations at the frequencies seen in merger simulations. We find that hyperon bulk viscosity for temperatures in the MeV regime can probably be neglected in this context, but becomes highly relevant for keV-range temperatures.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Probing the Diffuse Ly α Emission on Cosmological Scales: Ly α Emission Intensity Mapping Using the Complete SDSS-IV eBOSS

Based on Sloan Digital Sky Survey Data Release 16, we have detected the large-scale structure of Lyα emission in the universe at redshifts z = 2–3.5 by cross-correlating quasar positions and Lyα emission imprinted in the residual spectra of luminous red galaxies. We apply an analytical model to fit the corresponding Lyα surface brightness profile and multipoles of the redshift-space quasar–Lyα emission cross-correlation function. The model suggests an average cosmic Lyα luminosity density of $6.6^{+3.3}_{-3.1}$ x 10 40 erg s -1 cMpc -3 , a ~2σ detection with a median value about 8–9 times those estimated from deep narrowband surveys of Lyα emitters at similar redshifts. Although the low signal-to-noise ratio prevents us from a significant detection of the Lyα forest–Lyα emission cross-correlation, the measurement is consistent with the prediction of our best-fit model from quasar–Lyα emission cross-correlation within current uncertainties. We rule out the scenario where the Lyα photons mainly originate from quasars. We find that Lyα emission from star-forming galaxies, including contributions from that concentrated around the galaxy centers and that in diffuse Lyα-emitting halos, is able to explain the bulk of the Lyα luminosity density inferred from our measurements. Ongoing and future surveys can further improve the measurements and advance our understanding of the cosmic Lyα emission field.

79 ASTRONOMY AND ASTROPHYSICS↗

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Particle-in-cell modeling of electron beam generated plasma

Plasmas generated using energetic electron beams are well known for their low electron temperature (T e ) and plasma potential, which makes them attractive for atomic-precision plasma processing applications such as atomic layer etch and deposition. A 2-dimensional particle-in-cell model for an electron beam-generated plasma in argon confined by a constant applied magnetic field is described here in this article. Plasma production primarily occurs in the path of the beam electrons in the center of the chamber. The resulting plasma spreads out in the chamber through non-ambipolar diffusion with a short-circuiting effect allowing unequal electron and ion fluxes to different regions of the bounding conductive chamber walls. The cross-field transport of the electrons (and thus the steady-state characteristics of the plasma) are strongly impacted by the magnetic field. T e is anisotropic in the electron beam region, but low and isotropic away from the plasma production zone. The plasma density increases and the plasma becomes more confined near the region of production when the magnetic field strengthens. The magnetic field reduces both electron physical and energy transport perpendicular to the magnetic field. T e is uniform along the magnetic field lines and slowly decreases perpendicular to it. Electrons are less energetic in the sheath regions where the sheath electric field repels and confines the low-energy electrons from the bulk plasma. Even though electron and ion densities are similar in the bulk plasma due to quasi-neutrality, electron and ion fluxes on the grounded chamber walls are unequal at most locations. Electron confinement by the magnetic field weakens with increasing pressure, and the plasma spread out farther from the electron beam region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

GLOBAL ENERGETICS OF SOLAR FLARES. IV. CORONAL MASS EJECTION ENERGETICS

This study entails the fourth part of a global flare energetics project, in which the mass m {sub cme}, kinetic energy E {sub kin}, and the gravitational potential energy E {sub grav} of coronal mass ejections (CMEs) is measured in 399 M and X-class flare events observed during the first 3.5 years of the Solar Dynamics Observatory (SDO) mission, using a new method based on the EUV dimming effect. EUV dimming is modeled in terms of a radial adiabatic expansion process, which is fitted to the observed evolution of the total emission measure of the CME source region. The model derives the evolution of the mean electron density, the emission measure, the bulk plasma expansion velocity, the mass, and the energy in the CME source region. The EUV dimming method is truly complementary to the Thomson scattering method in white light, which probes the CME evolution in the heliosphere at r ≳ 2 R {sub ⊙}, while the EUV dimming method tracks the CME launch in the corona. We compare the CME parameters obtained in white light with the LASCO/C2 coronagraph with those obtained from EUV dimming with the Atmospheric Imaging Assembly onboard the SDO for all identical events in both data sets. We investigate correlations between CME parameters, the relative timing with flare parameters, frequency occurrence distributions, and the energy partition between magnetic, thermal, nonthermal, and CME energies. CME energies are found to be systematically lower than the dissipated magnetic energies, which is consistent with a magnetic origin of CMEs.

79 ASTRONOMY AND ASTROPHYSICS↗

Magnetism in undoped ZnS studied from density functional theory

The magnetic property induced by the native defects in ZnS bulk, thin film, and quantum dots are investigated comprehensively based on density functional theory within the generalized gradient approximation + Hubbard U (GGA + U) approach. We find the origin of magnetism is closely related to the introduction of hole into ZnS systems. The relative localization of S-3p orbitals is another key to resulting in unpaired p-electron, due to Hund's rule. For almost all the ZnS systems under study, the magnetic moment arises from the S-dangling bonds generated by Zn vacancies. The charge-neutral Zn vacancy, Zn vacancy in 1− charge sate, and S vacancy in the 1+ charge sate produce a local magnetic moment of 2.0, 1.0, and 1.0 μ{sub B}, respectively. The Zn vacancy in the neutral and 1− charge sates are the important cause for the ferromagnetism in ZnS bulk, with a Curie temperature (T{sub C}) above room temperature. For ZnS thin film with clean (111) surfaces, the spins on each surface are ferromagnetically coupled but antiferromagnetically coupled between two surfaces, which is attributable to the internal electric field between the two polar (111) surfaces of the thin film. Only surface Zn vacancies can yield local magnetic moment for ZnS thin film and quantum dot, which is ascribed to the surface effect. Interactions between magnetic moments on S-3p states induced by hole-doping are responsible for the ferromagnetism observed experimentally in various ZnS samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Synthesis of Self-Assembled rGO-Co{sub 3}O{sub 4} Nanoparticles in Nanorods Structure for Supercapacitor Application

A simple hydrothermal process was used to design self-assembled Co{sub 3}O{sub 4} nanoparticles in nanorod structure in the presence of graphene oxide as a template. The as-prepared Co{sub 3}O{sub 4} sample in a loose powder form was calcined at 450 °C to get the well-crystalline phase of the same compound. The obtained Co{sub 3}O{sub 4} powder sample was characterized by using the powder XRD and SEM. The XRD pattern shows totally nine distinct reflection peaks of (111), (220), (311), (222), (400), (422), (511), (440), and (533) planes. The most intense peaks were chosen to evaluate the structural parameters. The lattice parameters (a), volume (V), and density (ρ) of the samples are 8.09 Å, 529.47 Å{sup 3}, 6.06 g/cc, which are comparable to the value of lattice parameter (a = 8.056 Å), volume (V = 528.30 Å{sup 3}), and density (ρ = 6.055 gm/cc) for bulk Co{sub 3}O{sub 4}. The average size of the Co{sub 3}O{sub 4} nanoparticles is 14 nm which is smaller than the SEM size of 50 nm corresponding to the agglomeration of tiny particles. Further, the formation of Co{sub 3}O{sub 4} nanoparticles were also confirmed by obtaining the band at 569, 1334,1337, 1566, and 3397 cm{sup −1} in FTIR spectrum. Totally five characteristics peaks from Co{sub 3}O{sub 4} at 182.57, 456.49, 505.84, 605.80, and 618.02 cm{sup −1} and peaks from GO-Co{sub 3}O{sub 4} at 182.57, 483.44, 505.84, 605.80, and 618.02 cm{sup −1} corresponding to F{sub 2g}, E{sub g}, F{sub 2g}, F{sub 2g,} and A{sub g} modes of the crystalline Co{sub 3}O{sub 4}, respectively, in the Raman spectra. In the case of GO-Co{sub 3}O{sub 4} composite, low-intensity peaks of D and G bands are observed. The specific capacitance in rGO-Co{sub 3}O{sub 4} nanocomposite is about 65.15 Fg{sup −1}.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ab initio density functional theory study of non-polar (101{sup ¯}0), (112{sup ¯}0) and semipolar (202{sup ¯}1) GaN surfaces

The atomic structures of non-polar GaN(101{sup ¯}0), (112{sup ¯}0) and semipolar GaN(202{sup ¯}1), (202{sup ¯}1{sup ¯}) surfaces were studied using ab initio calculations within density functional theory. The bulk-like truncated (1 × 1) structure with buckled Ga-N or Ga-Ga dimers was found stable on the non-polar GaN(101{sup ¯}0) surface in agreement with previous works. Ga-N heterodimers were found energetically stable on the GaN(112{sup ¯}0)-(1 × 1) surface. The formation of vacancies and substitution site defects was found unfavorable for non-polar GaN surfaces. Semipolar GaN(202{sup ¯}1)-(1 × 1) surface unit cells consist of non-polar (101{sup ¯}0) and semipolar (101{sup ¯}1) nano-facets. The (101{sup ¯}1) nano-facets consist of two-fold coordinated atoms, which form N-N dimers within a (2 × 1) surface unit cell on a GaN(202{sup ¯}1) surface. Dimers are not formed on the GaN(202{sup ¯}1{sup ¯}) surface. The stability of the surfaces with single (101{sup ¯}0) or (101{sup ¯}1) nano-facets was analyzed. A single non-polar (101{sup ¯}0)-(1 × 1) nano-facet was found stable on the GaN(202{sup ¯}1) surface, but unstable on the GaN(202{sup ¯}1{sup ¯}) surface. A single (101{sup ¯}1) nano-facet was found unstable. Semipolar GaN surfaces with (202{sup ¯}1) and (202{sup ¯}1{sup ¯}) polarity can be stabilized with a Ga overlayer at Ga-rich experimental conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Demonstration of large field effect in topological insulator films via a high-κ back gate

The spintronics applications long anticipated for topological insulators (TIs) has been hampered due to the presence of high density intrinsic defects in the bulk states. In this work we demonstrate the back-gating effect on TIs by integrating Bi{sub 2}Se{sub 3} films 6–10 quintuple layer (QL) thick with amorphous high-κ oxides of Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3}. Large gating effect of tuning the Fermi level E{sub F} to very close to the band gap was observed, with an applied bias of an order of magnitude smaller than those of the SiO{sub 2} back gate, and the modulation of film resistance can reach as high as 1200%. The dependence of the gating effect on the TI film thickness was investigated, and ΔN{sub 2D}/ΔV{sub g} varies with TI film thickness as ∼t{sup −0.75}. To enhance the gating effect, a Y{sub 2}O{sub 3} layer thickness 4 nm was inserted into Al{sub 2}O{sub 3} gate stack to increase the total κ value to 13.2. A 1.4 times stronger gating effect is observed, and the increment of induced carrier numbers is in good agreement with additional charges accumulated in the higher κ oxides. Moreover, we have reduced the intrinsic carrier concentration in the TI film by doping Te to Bi{sub 2}Se{sub 3} to form Bi{sub 2}Te{sub x}Se{sub 1−x}. The observation of a mixed state of ambipolar field that both electrons and holes are present indicates that we have tuned the E{sub F} very close to the Dirac Point. These results have demonstrated that our capability of gating TIs with high-κ back gate to pave the way to spin devices of tunable E{sub F} for dissipationless spintronics based on well-established semiconductor technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Revealing the intrinsic transport properties of antiperovskite Sr 3 SnO thin films

A topologically non-trivial band structure and reports of superconductivity have motivated significant investigation into the transport properties of the antiperovskite oxide Sr 3 SnO. Phase-pure films of Sr 3 SnO can be grown by molecular beam epitaxy, but they do not have the required extremely high hole-doping densities (>1 × 10 21 cm –3 ) for which superconductivity has been observed in bulk materials. To date, high hole-doping densities have been achieved via inducing strontium deficiency, which inevitably results in impurity phases. Here, we show that indium acts as an effective hole dopant in Sr 3 SnO and can be used to achieve high hole doping densities in stoichiometric films. Films with carrier densities as high as 1.5 × 10 21 cm –3 remain non-superconducting. We, therefore, suggest that Sr 3 SnO is probably not an intrinsic superconductor. A second question addressed in this work is the measurement of the intrinsic electrical transport properties of Sr 3 SnO, given its rapid degradation in air. We show that even in inert atmospheres, reducing the time needed for establishing electrical contacts and protecting the Sr 3 SnO film result in improved electrical properties. Here, we demonstrate low carrier density films (4 × 10 18 cm –3 ) with carrier mobilities of 400 cm 2 V –1 s –1 at 10 K.

36 MATERIALS SCIENCE↗

Advanced Analysis of X-ray Fluorescence Measurements of the Interfacial Density of Eu Ions at Liquid–Liquid Interfaces for Solvent Back-Extraction

X-ray fluorescence near total reflection (XFNTR) is the primary technique used to measure the element-specific interfacial density of ions at liquid−liquid interfaces. Fluorescence from ions in the bulk liquids can complicate the determination of the interfacial density; consequently, measurements have been previously limited to samples without ions in the upper phase and with concentrations on the order of 10 μM or less in the lower phase. We modify the analysis of XFNTR data to account for ions in both bulk phases, then demonstrate its use in the context of rare-earth separations processes. In a model of ion stripping (i.e., back-extraction), dodecane solutions of di(2-ethylhexyl)- phosphoric acid (HDEHP) loaded with Eu(III) at the 1 mM level are placed in contact with either pure water or aqueous solutions of nitric or citric acid at pH 3. XFNTR measurements of equilibrated, quiescent samples reveal that citric acid solutions produce a disproportionately large depletion of ions from the interface compared to that from the bulk organic solution, whereas stripping by pure water or nitric acid solutions is negligible. As a result, this advance in the methodology of XFNTR may have broad applicability to the investigation of metal ions in chemical and biological processes at liquid−liquid interfaces.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Characterizing mechanical and microstructural properties of novel montmorillonite-rich polyethylene composites

Montmorillonite (MMT) clays are important industrial materials used as catalysts, chemical sorbents and fillers in polymer–clay nanocomposites. The layered structure of these clays has motivated research into further applications of these low-cost materials, including use as ion exchange media and solid-state ionic conductors. In these applications, the mechanical properties of MMT are key when considering long-term, reliable performance. Previous studies have focused on the mechanical properties of nanocomposites with MMT as the minority component or pure MMT thin films. In this work, the microstructure and mechanical properties of pure MMT and majority MMT/polyethylene composites pressed into dense pellets are examined. Characterization methods such as X-ray diffraction, atomic force microscopy and scanning electron microscopy together with nanoindentation reveal important structure–property relationships in the clay-based materials. Here, utilizing these techniques, we have discovered that MMT processing impacts the layered microstructure, chemical stability and, critically, the elastic modulus and hardness of bulk MMT samples. Particularly, the density of the pellets and the ordering of the clay platelets within them strongly influence the elastic modulus and hardness of the pellets. By increasing pressing force or by incorporating secondary components, the density, and therefore mechanical properties, can be increased. If the layered structure of the clay is destroyed by exfoliation, the mechanical properties will be compromised. Understanding these relationships will help guide new studies to engineer mechanically stable MMT-based materials for industrial applications.

36 MATERIALS SCIENCE↗