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At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Observation of giant exchange bias in bulk Mn{sub 50}Ni{sub 42}Sn{sub 8} Heusler alloy

We report a giant exchange bias (EB) field of 3520 Oe in bulk Mn{sub 50}Ni{sub 42}Sn{sub 8} Heusler alloy. The low temperature magnetic state of the martensite phase has been studied by DC magnetization and AC susceptibility measurements. Frequency dependence of spin freezing temperature (T{sub f}) on critical slowing down relation and observation of memory effect in zero field cooling mode confirms the super spin glass (SSG) phase at low temperatures. Large EB is attributed to the strong exchange coupling between the SSG clusters formed by small regions of ferromagnetic order embedded in an antiferromagnetic (AFM) matrix. The temperature and cooling field dependence of EB have been studied and related to the change in unidirectional anisotropy at SSG/AFM interface. The training effect also corroborates with the presence of frozen (SSG) moments at the interface and their role in EB.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Investigations on Ni-Co-Mn-Sn thin films: Effect of substrate temperature and Ar gas pressure on the martensitic transformations and exchange bias properties

We report the effect of substrate temperature (T{sub S}) and Ar gas pressure (P{sub D}) on the martensitic transformations, magnetic and exchange bias (EB) properties in Heusler type Ni-Co-Mn-Sn epitaxial thin films. Martensitic transformation temperatures and EB fields at 5 K were found to increase with increasing T{sub S}. The observed maximum EB value of 320 Oe after field cooling in the film deposited at 650 {sup ∘}C is high among the values reported for Ni-Mn-Sn thin films which is attributed to the coexistence of ferromagnetic (FM) and antiferromagnetic (AF) phases in the martensitic state. In the case of P{sub D} variation, with increase in P{sub D}, martensitic transformation temperatures were increased and a sharp transformation was observed in the film deposited at 0.06 mbar. Magnetization values at 5 K were higher for increasing P{sub D}. These observations are attributed to the compositional shift. EB effect is also present in these films. Microstructural features observed using atomic force microscopy (AFM) shows a fine twinning and reduced precipitation with increase in P{sub D}, which is also confirmed from the scanning electron microscopy (SEM) images. EB effects in both series were confirmed from the training effect. Target ageing effect has been observed in the films deposited before and after ninety days of time interval. This has been confirmed both on substrate temperature and Ar gas pressure variations.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Anisotropic behavior of exchange bias effect in tensile-deformed Pt{sub 3}Fe single crystal

Plastic strain in Pt{sub 3}Fe causes changes in the atomic arrangement around the (111) glide plane and induces ferromagnetism even at room temperature. We have performed detailed magnetization measurements on a Pt{sub 3}Fe single crystal with plastic strains of 11.6% under magnetic fields in various directions with respect to the [100] strain axis in order to elucidate the reversal mechanism of induced ferromagnetic domains. We observed that by decreasing the angle between the magnetization direction and strain axis, hysteresis loops are strongly sheared, which is associated with a large increase in coercivity. We also observed that an exchange bias effect appears for all field orientations, but the exchange field maximizes for an intermediate field direction. On the other hand, both phenomena are insensitive to magnetic fields perpendicular to the [100] strain axis. These observations were explained by a single-domain model with uniaxial anisotropy along the [100] strain axis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Néel walls between tailored parallel-stripe domains in IrMn/CoFe exchange bias layers

Tailored parallel-stripe magnetic domains with antiparallel magnetizations in adjacent domains along the long stripe axis have been fabricated in an IrMn/CoFe Exchange Bias thin film system by 10 keV He{sup +}-ion bombardment induced magnetic patterning. Domain walls between these domains are of Néel type and asymmetric as they separate domains of different anisotropies. X-ray magnetic circular dichroism asymmetry images were obtained by x-ray photoelectron emission microscopy at the Co/Fe L{sub 3} edges at the synchrotron radiation source BESSY II. They revealed Néel-wall tail widths of 1 μm in agreement with the results of a model that was modified in order to describe such walls. Similarly obtained domain core widths show a discrepancy to values estimated from the model, but could be explained by experimental broadening. The rotation senses in adjacent walls were determined, yielding unwinding domain walls with non-interacting walls in this layer system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Temperature dependent exchange bias training effect in single-crystalline BiFeO{sub 3}/Co bilayers

Single-crystalline BiFeO{sub 3} (BFO)/Co bilayers were prepared by combined pulsed laser deposition and magnetron sputtering on (001) SrTiO{sub 3} substrates. Exchange bias (EB) and accompanying training effect have been studied as a function of temperature (T) between 5 K and 300 K. A non-monotonic exchange field variation with sharp increase below 100 K has been observed. In the meanwhile, strong training effect was recorded when T < 100 K and it weakens monotonically with increasing T up to 300 K. These temperature dependent EB and training effect may be caused by the uncompensated spins in both the interfacial spin-glass (SG) phase at low temperature and the antiferromagnetic BFO layer at higher temperature. The low temperature EB training results can be well fitted by a modified Binek's model considering asymmetric changes of the pinning SG spins at the descending and the ascending branches.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt){sub n} or (Co/Pd){sub n} multilayer pinning.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Bias-free lateral terahertz emitters—A simulation study

The design and performance of bias-free InN-based THz emitters that exploit lateral photocurrents is studied by means of numerical simulations. We use a drift-diffusion model with adjusted carrier temperatures and mobilities. The applicability of this approach is demonstrated by a comparison with results from Monte-Carlo simulations. We consider a simple but robust lateral emitter concept using metal stripes with two different thicknesses with one of them being thin enough to be transparent for THz radiation. This arrangement can be easily multiplexed and the efficiency of this concept has already been demonstrated by experiment for GaAs substrates. In the present study, we consider InN, which is known to be an efficient photo-Dember emitter because of its superior transport properties. Our main focus is on the impact of the emitter design on the emission efficiency assuming different operation principles. Both the lateral photo-Dember (LPD) effect and built-in lateral field effects are considered. The appropriate choice of the metal stripe and window geometry as well as the impact of surface Fermi level pinning are investigated in detail, and design guidelines for efficient large area emitters using multiplexed structures are provided. We find that InN LPD emitters do not suffer from Fermi level pinning at the InN surface. The optimum emission efficiency is found for LPD emitter structures having 200 nm wide illumination windows and mask stripes. Emitter structures in which lateral electric fields are induced by the metal mask contacts can have a considerably higher efficiency than pure LPD emitters. In the best case, the THz emission of such structures is increased by one order of magnitude. Their optimum window size is 1 μm without the necessity of a partially transparent set of mask stripes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Cooling field tuned magnetic phase transition and exchange bias-like effect in Y{sub 0.9}Pr{sub 0.1}CrO{sub 3}

Cooling magnetic field dependence of magnetic phase transition has been observed in Y{sub 0.9}Pr{sub 0.1}CrO{sub 3}. G{sub z}F{sub x} order (spin structure of PrCrO{sub 3}) is dominant after zero field cooling (ZFC), whereas G{sub x}F{sub z} order (spin structure of YCrO{sub 3}) is dominant after cooling under a field higher than 100 Oe. Positive/negative exchange bias-like effect, with large vertical shift and small horizontal shift, has been observed after FC/ZFC process. The vertical shift can be attributed to the frozen ordered Pr{sup 3+} and Cr{sup 3+} spins in magnetic domains, because of the strong coupling between Pr{sup 3+} and Cr{sup 3+} sublattices; while the horizontal shift is a result of the pinning of spins at the interfaces. The frozen structure is generated by the field used for the measurement of the initial magnetization curve of M(H) for the ZFC cooled sample, while it is generated by the cooling field for the sample cooled under a cooling field higher than 100 Oe.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Ultralow bias power all-optical photonic crystal memory realized with systematically tuned L3 nanocavity

An InP photonic crystal nanocavity with an embedded InGaAsP active region is a unique technology that has realized an all-optical memory with a sub-micro-watt operating power and limitless storage time. In this study, we employed an L3 design with systematic multi-hole tuning, which realized a higher loaded Q factor (>40 000) and a lower mode volume (0.9 μm{sup 3}) than a line-defect-based buried-heterostructure nanocavity (16 000 and 2.2 μm{sup 3}). Excluding the active region realized a record loaded Q factor (210 000) in all for InP-based nanocavities. The minimum bias power for bistable memory operation was reduced to 2.3 ± 0.3 nW, which is about 1/10 of the previous record of 30 nW. This work further established the capability of a bistable nanocavity memory for use in future ultralow-power-consumption on-chip integrated photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Reentrant spin-glass behavior and bipolar exchange-bias effect in “Sn” substituted cobalt-orthotitanate

We report the co-existence of longitudinal ferrimagnetic behavior with Néel temperature T{sub N} ∼ 46.1 K and reentrant transverse spin-glass state at 44.05 K in Tin (Sn) doped cobalt-orthotitanate (Co{sub 2}TiO{sub 4}). The ferrimagnetic ordering is resulting from different magnetic moments of Co{sup 2+} on the A-sites (3.87 μ{sub B}) and B-sites (5.069 μ{sub B}). The magnetic compensation temperature (T{sub COMP}) shifts from 31.74 K to 27.1 K when 40 at. % of “Sn{sup 4+}” substitutes “Ti{sup 4+}” at B-sites where the bulk-magnetization of two-sublattices balance each other. For T > T{sub N}, the dc-magnetic susceptibility (χ{sub dc} = M/H{sub dc}) fits well with the Néel's expression for the two-sublattice model with antiferromagnetic molecular field constants N{sub BB} ∼ 15.44, N{sub AB} ∼ 32.01, and N{sub AA} ∼ 20.88. The frequency dependence of ac-magnetic susceptibility χ{sub ac} data follows the Vogel-Fulcher law, and the power-law of critical slowing-down with “zν” = 6.01 suggests the existence of spin-clusters (where “z” and “ν” being dynamic critical-exponent and correlation length of critical-exponent, respectively). This system exhibits unusual hysteresis loops with large bipolar exchange-bias effect (H{sub EB} ∼ 13.6 kOe at 7 K) after zero-field cooling process from an un-magnetized state, and a dramatic collapse of remanence (M{sub R}) and coercive field (H{sub C}) across T{sub COMP}. The possible origins of such anomalous characteristics were discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Intra- and inter-layer charge redistribution in biased bilayer graphene

We investigate the spatial redistribution of the electron density in bilayer graphene in the presence of an interlayer bias within density functional theory. It is found that the interlayer charge redistribution is inhomogeneous between the upper and bottom layers and the transferred charge from the upper layer to the bottom layer linearly increases with the external voltage which further makes the gap at K point linearly increase. However, the band gap will saturate to 0.29 eV in the strong-field regime, but it displays a linear field dependence at the weak-field limit. Due to the AB-stacked way, two carbon atoms per unit cell in the same layer are different and there is also a charge transfer between them, making the widths of π valence bands reduced. In the bottom layer, the charge transfers from the direct atoms which directly face another carbon atom to the indirect atoms facing the center of the hexagon on the opposite layer, while the charge transfers from the indirect atoms to the direct atoms in the upper layer. Furthermore, there is a diploe between the upper and bottom layers which results in the reduction of the interlayer hopping interaction.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors

We investigated the impact of excess oxygen on positive bias temperature stress (PBTS) instability of self-aligned coplanar amorphous InGaZnO thin-film transistors. We focus on the interface region which is compositionally differentiated from the bulk material on each side. The threshold voltage shift under PBTS is proportional to the extracted density of interface trap states that act as electron traps. The density of interface trap states is extracted from capacitance-voltage measurements with monochromatic light of varying wavelengths. We introduce a figure-of-merit that quantifies the amount of excess oxygen relative to the metal cation composition in the interface region. Minimization of interfacial excess oxygen from 112.4% to 101.2% reduces the density of interface trap states by a factor of 2.77, resulting in improvement of PBTS instability from a threshold voltage shift value of 4.42 V to 0.35 V.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Spin-torque driven magnetization switching in ferromagnetic nanopillar with pinned layer biasing configuration

Magnetization switching driven by spin transfer torque in a ferromagnetic nanopillar by biasing the angular polarizer with different orientation has been studied. The free layer dynamics includes the spin torque from the oscillating free layer with magneto crystalline anisotropy and shape anisotropy, which is governed by the Landau-Lifshitsz-Gilbert-Slonczweski (LLGS) equation and solving it numerically by using embedded Runge Kutta fourth order method. Results of numerical simulation shows that there is a drastic reduction of switching time in the free layer by the orientation of angular polarizer of the nano pillar device. We fixed the angular polarizer as 0°, 30°, 60°, 90° and the corresponding switching time is 6.53 ns, 4.36 ns, 2.25 ns and 1.21 ns respectively for an applied current density of 5 × 10{sup 11} Am{sup −2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Exchange bias training relaxation in spin glass/ferromagnet bilayers

A canonical spin glass (SG) FeAu layer is fabricated to couple to a soft ferromagnet (FM) FeNi layer. Below the SG freezing temperature, exchange bias (EB) and training are observed. Training in SG/FM bilayers is insensitive to cooling field and may suppress the EB or change the sign of the EB field from negative to positive at specific temperatures, violating from the simple power-law or the single exponential function derived from the antiferromagnet based systems. In view of the SG nature, we employ a double decay model to distinguish the contributions from the SG bulk and the SG/FM interface to training. Dynamical properties during training under different cooling fields and at different temperatures are discussed, and the nonzero shifting coefficient in the time index as a signature of slowing-down decay for SG based systems is interpreted by means of a modified Monte Carlo Metropolis algorithm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗