SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Voltage barriers in a ZnO varistor have been imaged by voltage-contrast scanning electron microscopy. They are due to grain boundaries and are capable of supporting voltage differences of up to about 4 V.
Multijunction cell allows for fabrication of high-voltage solar cell on single semiconductor wafer. Photovoltaic energy source using cell is combined on wafer with circuit it is to power. Cell consists of many voltage-generating regions internally or externally interconnected to give desired voltage and current combination. For computer applications, module is built on silicon wafer with energy for internal information processing and readouts derived from external light source.
The NASA Charging Analyzer Program is used to conduct preliminary computations of the voltage distributions around such large spacecraft in geomagnetic substorm environments at geosynchronous altitudes. Both a standard operating voltage (+ or - 150 volts on solar arrays) and direct-drive (+1200 volts on arrays) configurations are considered. Thruster-off simulations are computed for both operating voltage configurations while the effect of simulated thruster-on conditions are evaluated only for direct-drive configuration. These simulated thruster-on conditions are evaluated only for direct-drive configuration. These simulated thruster operations appear to alleviate surface charging.
Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.
A lumped parameter transmission line with a surge impedance matching that of the aircraft and its return lines was evaluated as a replacement for earlier current generators. Various test circuit parameters were evaluated using a 1/10 scale relative geometric model. Induced voltage response was evaluated by taking measurements on the NASA-Dryden Digital Fly by Wire F-8 aircraft. Return conductor arrangements as well as other circuit changes were also evaluated, with all induced voltage measurements being made on the same circuit for comparison purposes. The lumped parameter transmission line generates a concave front current wave with the peak di/dt near the peak of the current wave which is more representative of lightning. However, the induced voltage measurements when scaled by appropriate scale factors (peak current or di/dt) resulting from both techniques yield comparable results.
A computer model of the three-dimensional sheath formation and plasma current collection by high voltage spacecraft has been developed. By using new space charge density and plasma collection algorithms, it is practical to perform calculations for large, complex spacecraft. The model uses NASCAP compatible objects and geometries. Results indicate that ion focusing observed in the laboratory during high voltage collection experiments is probably due to voltage gradients on the collecting surfaces.
The paper uses the NASCAP computer code to compute voltage distributions around a Solar Electric Propulsion (SEP) spacecraft as it encounters an idealized geomagnetic substorm environment. Consideration is given to both a standard operating voltage and direct-drive voltage configuration. The computations are presented without thruster operations as well as with a simplified, simulated thruster-on representation for direct-drive configuration only. Finally, it is stressed that the computations seeking possible areas of concern in the spacecraft design are exploratory.
Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.
A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.
A multistep diffusion processing schedule is described which allows the attainment of high open circuit voltages in 0.1 ohm/cm silicon cells. The schedule consists of a deep primary diffusion, followed by an acid etch of emmitter surface which is then followed by a shallow secondary diffusion. A correlation is made between the observed voltage increases and the time of primary diffusion. Results indicate that as the primary diffusion time increases, the voltage rises monotonically.
The use of high-voltage solar arrays in space is discussed in connection with the draining of array power by currents flowing between exposed surfaces through the surrounding plasma. The possibility of reducing the power loss by arranging solar cell strings in repeated small-area modules to eliminate any large areas at high potentials is investigated. It is found that the difference in power loss between modular and linear patterned high-voltage arrays is fairly small. Although the use of modular patterns can reduce the effective mean potential by about 10%, for the type of configuration being considered there is also a 10% increase in sheath area, leading to only a few percent change in total power loss. It is concluded that plasma power loss should not be a primary consideration in designing the physical arrangement of high-voltage arrays.
The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.
Gas tungsten arc welds were made on low alloy steel plates to which intentional defects (discontinuities) were imposed. Disruption of shielding gas, welding over surface films, and tack welds produce changes in what is otherwise a relatively uniform voltage signal. The arc voltage was 15 volts + or - 2 volts with 300 mV ripple noise from the power supply. Changes in this steady noise voltage varied from 50 mV to less than one millivolt depending on the severity and the type of change experienced. In some instances the changes were easily detected by analysis of the signal in real time, while in other cases the signal had to transformed to the frequency domain in order to detect the changes. Discontinuities as small as 1.5 mm in length were detected. The ultimate sensitivity and reproducibility of the technique is still being investigated.
A method is provided for making a high voltage multijunction solar cell. The cell comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming V-shaped grooves in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells.
A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body. The unit cells are comprised of doped regions of opposite conductivity type separated by a gap or undiffused region. Metal contacts connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions separated by a overlie the unit cells but the cells may be formed in both faces of the wafer.
The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.
A high voltage multijunction solar cell comprises a number of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types separated by a gap. The method includes forming V-shaped grooves in the wafer and orienting the wafer so that ions of one conductivity type can be implanted in one face of the groove while the other face is shielded. A metallization layer is applied and selectively etched away to provide connections between the unit cells.
Circuitry allows large multiplication of voltage. Filament voltage is -80kV. Potential difference between terminals P3 and P4 adjusted to make grid 80 to 150 volts more negative than filament enabling grid to focus electrons from filament into stream impinging on anode, which then emits x-rays. Circuitry provides independently adjustable voltages in kilovolt range for x-ray tubes and other instruments.