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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,117 records · Page 62

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NASA NTRS2011

Alpha voltaic batteries and methods thereof

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Raffaelle, Ryne P.↗

NASA NTRS2011

Alpha voltaic batteries and methods thereof

Raffaelle, Ryne P.↗

NASA NTRS2016

Digital Alloy Absorber for Photodetectors

In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

Hill, Cory J.↗

NASA NTRSDate not supplied

Microbes Share Rides Too: Updating Encapsulated Bioburden Estimate Values in Electronic Parts Common to Class D Mission Platforms.

As NASA develops more planetary protection missions that are Category III and in the Class D/rideshare mission platform, there is an increasing reliance on estimation of prelaunch bioburden to understand needs for burn up and breakup analyses or other methods to meet pre-launch bioburden levels. Current levels estimated for the encapsulated bioburden of semiconductor parts cited by NASA have been based on estimates of semiconductor manufacturing approaches from the 1970s that do not incorporate over fifty years of evolving cleanliness of semiconductor manufacturing processes and facilities. This investigation will focus on direct sampling of semiconductor parts for encapsulated bioburden values, drawing upon Goddard’s strength in EEE parts, supply chain management, destructive parts analysis and existing local planetary protection lab facilities to prepare and measure encapsulated bioburden at a statistically significant level for standard electronics parts common to known Class D/rideshare platforms.

planetary protection↗

NASA NTRSDate not supplied

Microbes Share Rides Too: Updating Encapsulated Bioburden Estimate Values in Electronic Parts Common to Class D Missions

As NASA develops more planetary protection missions that are Category III and in the Class D/rideshare mission platform, there is an increasing reliance on estimation of prelaunch bioburden to understand needs for burn up and breakup analyses or other methods to meet pre-launch bioburden levels. Current levels estimated for the encapsulated bioburden of semiconductor parts cited by NASA have been based on estimates of semiconductor manufacturing approaches from the 1970s that do not incorporate the evolving cleanliness of semiconductor manufacturing since that time. This investigation will focus on direct sampling of semiconductor parts for encapsulated bioburden values, drawing upon Goddard’s strength in EEE parts, supply chain management, destructive parts analysis and existing local planetary protection lab facilities to prepare and measure encapsulated bioburden at a statistically significant level for standard electronics parts common to known Class D/rideshare platforms.

planetary protection↗

NASA NTRS1972

Jupiter radiation test levels and their expected impact on an encounter mission

The upper limit, of electron and proton fluences for a thermoelectric outer planet spacecraft mission in a near-Jupiter environment, for use as radiation design restraints, were extracted from a model of the Jovian trapped radiation belts. Considerations of radiation effects in semiconductor devices were employed to construct simplified radiation test levels based on the design restraints. Corresponding levels, based on the nominal belt models, are one to three orders of magnitude smaller. In terms of expected radiation-induced degradation in semiconductor devices, an encounter with an environment as severe as the design restraints would require hardening the system in order to guarantee high reliability. On the other hand, the nominal levels would only necessitate care in the selection of components and the avoidance of certain semiconductor components.

Barengoltz, J. B.↗

NASA NTRS1975

High reliability bond program using small diameter aluminum wire

The program was undertaken to characterize the performance of small diameter aluminum wire ultrasonically bonded to conductors commonly encountered in hybrid assemblies, and to recommend guidelines for improving this performance. Wire, 25.4, 38.1 and 50.8 um (1, 1.5 and 2 mil), was used with bonding metallization consisting of thick film gold, thin film gold and aluminum as well as conventional aluminum pads on semiconductor chips. The chief tool for evaluating the performance was the double bond pull test in conjunction with a 72 hour - 150 C heat soak and -65 C to +150 C thermal cycling. In practice the thermal cycling was found to have relatively little effect compared to the heat soak. Pull strength will decrease after heat soak as a result of annealing of the aluminum wire; when bonded to thick film gold, the pull strength decreased by about 50% (weakening of the bond interface was the major cause of the reduction). Bonds to thin film gold lost about 30 - 40% of their initial pull strenth; weakening of the wire itself at the bond heel was the predominant cause. Bonds to aluminum substrate metallization lost only about 22%. Bonds between thick and thin film gold substrate metallization and semiconductor chips substantiated the previous conclusions but also showed that in about 20 to 25% of the cases, bond interface failure occurred at the semiconductor chip.

Macha, M.↗

NASA NTRS1975

Low cost AMOS solar cell development

Recent developments at JPL have demonstrated that high conversion efficiencies are found with GaAs metal semiconductor solar cells when a particular heat treatment processing step is used to introduce an interfacial layer between the metal and the semiconductor. The new cell, called AMOS (Antireflection-Coated Metal-Oxide-Semiconductor), has open circuit voltages of 0.68-0.72 volts and efficiencies of 15% under terrestrial sunlight, as compared to values of 0.45-0.48 volts and 10%, respectively, for similar cells without an interfacial layer. Potentially higher efficiencies are feasible as further improvements are made in optimizing the interfacial layer effect and in increasing the blue response of the cells. A thin film AMOS cell is proposed that uses a thin recrystallized germanium (Ge) layer between a low cost metal substrate and the vapor phase epitaxially (VPE)-grown GaAs.

Stirn, R. J.↗

NASA NTRS1977

High voltage, high current Schottky barrier solar cell

A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.

Stirn, R. J.↗

NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗

NASA NTRS1982

Pulsed plasma thruster ignitor plug ignition characteristics

The operating characteristics of the semiconductor spark gap ignitor plug used to initiate the discharge in a pulsed plasma thruster are investigated. Current and voltage waveform measurements for the ignitor plug alone, and for the plug mounted in the thruster cathode indicate an average dynamic impedance of 0.2 ohms for a wide range of operating conditions, and a trigger circuit energy transfer efficiency to the plug on the order of 25%. Two modes of trigger ignition are found which are related to the rise time of the applied voltage pulse. Analysis of plasma characteristics reveals plug erosion to occur primarily in the semiconductor and anode regions, by mechanisms including plug metal embrittlement, plasma sputtering and vaporization caused by the discharge current pulse. Measurements also indicate a plume velocity on the order of 1580,000 cm/sec which increases with trigger circuit stored energy. The results establish levels of performance for future applications of semiconductor spark gap ignitor plugs in plasma devices.

Brady, M. E.↗

NASA NTRS1984

Lasers, their development, and applications at M.I.T. Lincoln Laboratory

A historical account of the work on lasers at MIT Lincoln Laboratory is presented. Highlighted are the efforts that led to the coinvention of the semiconductor laser and the Laboratory's later role in establishing the feasibility of GaInAsP/InP semiconductor lasers for use in fiber telecommunications at 1.3-1.5 micron wavelengths. Descriptions of other important developments include tunable lead-salt semiconductor and solid-state lasers for spectroscopy and LIDAR applications, respectively, as well as ultrastable CO2 lasers for coherent infrared radar.

Rediker, R. H.↗

NASA NTRS1985

High-Output Injection Laser

Terraced double-heterojunction large optical cavity laser features high output in single optical mode. Semiconductor laser consists of body of single-crystal semiconductor material, typically composed of Group III to V compounds in form of rectangular parallelepiped. One of laser end faces partially transparent so that light may be emitted from it. Lateral thickness variation of active and guide layers in semiconductor laser produces confinement of propagating laser beam in lateral direction.

Connolly, J. C.↗

NASA NTRS1986

Low-Resistivity Zinc Selenide for Heterojunctions

Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

Stirn, R. J.↗

NASA NTRS1985

Crystal Growth Research in Space

The objectives of this work are to develop growth techniques and theory leading to improved bulk growth of semiconductor single crystals. Ground based experiments will be complemented by experiments carried out in the low-g environment provided by the space shuttle. Analytical studies and laboratory investigations are being conducted to better define the causes of crystalline defects and inhomogeneities. The compound semiconductor lead-tin-telluride is being used as the modeling material. Theoretical techniques are being developed to predict the thermal and solutal fields which are present during bulk growth from a melt. Techniques for measuring the thermophysical properties of semiconductors at high temperatures have been developed. During the past year electrochemical etching techniques have been developed for delineation of inhomogeneous regions in crystals. Thermal diffusivity measurements have been completed for the solid and liquid phases of PbTe and PbSnTe. Preliminary results have been obtained on the effects on crystal morphology of gravity, interface shape and interaction between the melt and the container.

Crouch, R. K.↗

NASA NTRS1987

High-Temperature Thermoelectric Energy Conversion

Theory of thermoelectric energy conversion at high temperatures and status of research on conversion materials reviewed in report. Shows highest values of thermoelectric figure of merit, Z, found in semiconductor materials. Semiconductors keep wide choice of elements and compounds. Electrical properties tailored to particular application by impurity doping and control of stoichiometry. Report develops definition of Z useful for comparing materials and uses it to evaluate potentials of different classes of materialsmetals, semiconductors, and insulators.

Wood, C.↗

NASA NTRS1987

Determination of a natural valence-band offset - The case of HgTe and CdTe

A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

Shih, C. K.↗

NASA NTRS1988

Micromachining Of Silicon

Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.

Dickman, John E.↗