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At least 1,117 records · Page 62

Electrical characterization of MIM capacitor comprises an adamantane film at room temperature

We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10{sup −7} A/cm{sup 2} at 13.5 V, better capacitance density of 2.14 fF/μm{sup 2} at 100 KHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room temperature luminescence and ferromagnetism of AlN:Fe

AlN:Fe polycrystalline powders were synthesized by a modified solid state reaction (MSSR) method. Powder X-ray diffraction and transmission electron microscopy results reveal the single phase nature of the doped samples. In the doped AlN samples, Fe is in Fe{sup 2+} state. Room temperature ferromagnetic behavior is observed in AlN:Fe samples. Two photoluminescence peaks located at about 592 nm (2.09 eV) and 598 nm (2.07 eV) are observed in AlN:Fe samples. Our results suggest that AlN:Fe is a potential material for applications in spintronics and high power laser devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electric field control of the γ-Al{sub 2}O{sub 3}/SrTiO{sub 3} interface conductivity at room temperature

Controlling interfaces using electric fields is at the heart of modern electronics. The discovery of the conducting interface between the two insulating oxides LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO) has led to a number of interesting electric field-dependent phenomena. Recently, it was shown that replacing LAO with a spinel γ-Al{sub 2}O{sub 3} (GAO) allows a good pseudo-epitaxial film growth and high electron mobility at low temperatures. Here, we show that the GAO/STO interface resistance, similar to LAO/STO, can be tuned by orders of magnitude at room temperature using the electric field of a backgate. The resistance change is non-volatile, bipolar, and can be tuned continuously rather than being a simple on/off switch. Exposure to light significantly changes the capabilities to tune the interface resistance. High- and low-resistive states are obtained by annihilation and creation, respectively, of free n-type carriers, and we speculate that electromigration of oxygen vacancies is the origin of the tunability.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

Indium nitride (InN) is potentially suitable for the fabrication of high performance thin-film transistors (TFTs) because of its high electron mobility and peak electron velocity. However, InN is usually grown using a high temperature growth process, which is incompatible with large-area and lightweight TFT substrates. In this study, we report on the room temperature growth of InN films on flexible polyimide sheets using pulsed sputtering deposition. In addition, we report on the fabrication of InN-based TFTs on flexible polyimide sheets and the operation of these devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Room temperature deintercalation of alkali metal atoms from epitaxial graphene by formation of charge-transfer complexes

Atom (or molecule) intercalations and deintercalations have been used to control the electronic properties of graphene. In general, finite energies above room temperature (RT) thermal energy are required for the intercalations and deintercalations. Here, we demonstrate that alkali metal atoms can be deintercalated from epitaxial graphene on a SiC substrate at RT, resulting in the reduction in density of states at the Fermi level. The change in density of states at the Fermi level at RT can be applied to a highly sensitive graphene sensor operating at RT. Na atoms, which were intercalated at a temperature of 80 °C, were deintercalated at a high temperature above 1000 °C when only a thermal treatment was used. In contrast to the thermal treatment, the intercalated Na atoms were deintercalated at RT when tetrafluorotetracyanoquinodimethane (F4-TCNQ) molecules were adsorbed on the surface. The RT deintercalation occurred via the formation of charge-transfer complexes between Na atoms and F4-TCNQ molecules.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Room temperature ferroelectricity in continuous croconic acid thin films

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Evidence for room-temperature in-diffusion of nickel into silicon

Interstitial nickel in crystalline Si is shown to be a fast diffuser at room temperature. In this study, Ni is incorporated in Si by wet chemical etching in nickel-contaminated alkaline solutions. Nickel in-diffusion is observed by means of detecting the electrically active NiVO defect, which is formed due to Ni capture to the vacancy–oxygen complex in electron-irradiated Si. The depth profiles of the NiVO concentration measured by the deep-level transient spectroscopy technique extend to ∼15 μm in the samples doped with Ni at 35 °C for 30 min. This allows us to get a lower estimate for the nickel diffusivity at this temperature as 10{sup −9} cm{sup 2}/s. The activation energy for electron emission from the NiVO level and the apparent capture cross section are equal to 371 meV and 3 × 10{sup −15} cm{sup 2}, respectively. The NiVO complex dissociates at 300 °C reestablishing the initial concentration of the VO centers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Time-dependent density functional theory for the charging kinetics of electric double layer containing room-temperature ionic liquids

Understanding the charging kinetics of electric double layers is of fundamental importance for the design and development of novel electrochemical devices such as supercapacitors and field-effect transistors. In this paper, we study the dynamic behavior of room-temperature ionic liquids using a classical time-dependent density functional theory that accounts for the molecular excluded volume effects, the electrostatic correlations, and the dispersion forces. While the conventional models predict a monotonic increase of the surface charge with time upon application of an electrode voltage, our results show that dispersion between ions results in a non-monotonic increase of the surface charge with the duration of charging. Finally and furthermore, we investigate the effects of van der Waals attraction between electrode/ionic-liquid interactions on the charging processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Soft x-ray absorption spectroscopy of metalloproteins and high-valent metal-complexes at room temperature using free-electron lasers

X-ray absorption spectroscopy at the L-edge of 3d transition metals provides unique information on the local metal charge and spin states by directly probing 3d-derived molecular orbitals through 2p-3d transitions. However, this soft x-ray technique has been rarely used at synchrotron facilities for mechanistic studies of metalloenzymes due to the difficulties of x-ray-induced sample damage and strong background signals from light elements that can dominate the low metal signal. Here, we combine femtosecond soft x-ray pulses from a free-electron laser with a novel x-ray fluorescence-yield spectrometer to overcome these difficulties. We present L-edge absorption spectra of inorganic high-valent Mn complexes (Mn ∼ 6–15 mmol/l) with no visible effects of radiation damage. We also present the first L-edge absorption spectra of the oxygen evolving complex (Mn4CaO5) in Photosystem II (Mn < 1 mmol/l) at room temperature, measured under similar conditions. Our approach opens new ways to study metalloenzymes under functional conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Investigation of the Dzyaloshinskii-Moriya interaction and room temperature skyrmions in W/CoFeB/MgO thin films and microwires

Recent studies have shown that material structures, which lack structural inversion symmetry and have high spin-orbit coupling can exhibit chiral magnetic textures and skyrmions which could be a key component for next generation storage devices. The Dzyaloshinskii-Moriya Interaction (DMI) that stabilizes skyrmions is an anti-symmetric exchange interaction favoring non-collinear orientation of neighboring spins. It has been shown that materials systems with high DMI can lead to very efficient domain wall and skyrmion motion by spin-orbit torques. To engineer such devices, it is important to quantify the DMI for a given material system. Here, we extract the DMI at the Heavy Metal/Ferromagnet interface using two complementary measurement schemes, namely, asymmetric domain wall motion and the magnetic stripe annihilation. By using the two different measurement schemes, we find for W(5 nm)/Co 20 Fe 60 B 20 (0.6 nm)/MgO(2 nm) the DMI to be 0.68 ± 0.05 mJ/m 2 and 0.73 ± 0.5 mJ/m 2 , respectively. Furthermore, we show that this DMI stabilizes skyrmions at room temperature and that there is a strong dependence of the DMI on the relative composition of the CoFeB alloy. Finally, we optimize the layers and the interfaces using different growth conditions and demonstrate that a higher deposition rate leads to a more uniform film with reduced pinning and skyrmions that can be manipulated by spin orbit torques.

36 MATERIALS SCIENCE↗

The influence of mesoscopic confinement on the dynamics of imidazolium-based room temperature ionic liquids in polyether sulfone membranes

The structural dynamics of a series of 1-alkyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (C n mimNTf 2 , n = 2, 4, 6, 10: ethyl—Emim; butyl—Bmim; hexyl—Hmim; decyl—Dmim) room temperature ionic liquids confined in the pores of polyether sulfone (PES 200) membranes with an average pore size of ~350 nm and in the bulk liquids were studied. Time correlated single photon counting measurements of the fluorescence of the fluorophore coumarin 153 (C153) were used to observe the time-dependent Stokes shift (solvation dynamics). The solvation dynamics of C153 in the ionic liquids are multiexponential decays. The multiexponential functional form of the decays was confirmed as the slowest decay component of each bulk liquid matches the slowest component of the liquid dynamics measured by optical heterodyne-detected optical Kerr effect (OHD-OKE) experiments, which is single exponential. The fact that the slowest component of the Stokes shift matches the OHD-OKE data in all four liquids identifies this component of the solvation dynamics as arising from the complete structural randomization of the liquids. Although the pores in the PES membranes are large, confinement on the mesoscopic length scale results in substantial slowing of the dynamics, a factor of ~4, for EmimNTf2, with the effect decreasing as the chain length increases. By DmimNTf 2 , the dynamics are virtually indistinguishable from those in the bulk liquid. The rotation relaxation of C153 in the four bulk liquids was also measured and showed strong coupling between the C153 probe and its environment.

14 SOLAR ENERGY↗

Enhanced room-temperature spin Seebeck effect in a YIG/C 60 /Pt layered heterostructure

We report on large enhancement of the longitudinal spin Seebeck effect (LSSE) in the Y 3 Fe 5 O 12 (YIG)/Pt system at room temperature due to the addition of a thin layer of organic semiconductor (C 60 ) in between the YIG and the Pt. LSSE measurements show that the LSSE voltage increases significantly, from the initial value of 150 nV for the YIG/Pt structure to 240 nV for the YIG/C 60 (5nm)/Pt structure. Radio-frequency transverse susceptibility experiments reveal a significant decrease in the surface perpendicular magnetic anisotropy (PMA) of the YIG film when C 60 is deposited on it. These results suggest that the LSSE enhancement may be attributed to increased spin mixing conductance, the decreased PMA, and the large spin diffusion length of C 60 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Propagation of THz acoustic wave packets in GaN at room temperature

We use femtosecond laser pulses to generate coherent longitudinal acoustic phonons at frequencies of 1–1.4 THz and study their propagation in GaN-based structures at room temperature. Two InGaN-GaN multiple-quantum-well (MQW) structures separated by a 2.3 μm-thick GaN spacer are used to simultaneously generate phonon wave packets with a central frequency determined by the period of the MQW and detect them after passing through the spacer. The measurements provide lower bounds for phonon lifetimes in GaN, which are still significantly lower than those from first principles predictions. The material Q-factor at 1 THz is found to be at least as high as 900. The measurements also demonstrate a partial specular reflection from the free surface of GaN at 1.4 THz. This work shows the potential of laser-based methods for THz range phonon spectroscopy and the promise for extending the viable frequency range of GaN-based acousto-electronic devices.

36 MATERIALS SCIENCE↗

Nanoscale organization in the fluorinated room temperature ionic liquid: Tetraethyl ammonium (trifluoromethanesulfonyl)(nonafluorobutylsulfonyl)imide

Fluorinated Room Temperature Ionic Liquids (FRTILs) are a branch of ionic liquids that is the object of growing interest for a wide range of potential applications, due to the synergic combination of specifically ionic features and those properties that stem from fluorous tails. So far limited experimental work exists on the micro- and mesoscopic structural organization in this class of compounds. Such a work is however necessary to fully understand morphological details at atomistic level that would have strong implications in terms of bulk properties. In this work, we use the synergy between X-ray and neutron scattering together with molecular dynamics simulations to access structural details of a technologically relevant FRTIL that is characterised by an anion bearing a long enough fluorinated tail to develop specific morphological features. In particular, we find the first experimental evidence that in FRTILs bearing an asymmetric bis(perfluoroalkyl)sulfonyl-imide anion, fluorous side chains tend to be spatially segregated into nm-scale spatial heterogeneities. This feature together with the well-established micro-segregation of side alkyl chains in conventional RTILs leads to the concept of triphilic ILs, whose technological applications are yet to be fully developed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Room temperature deposition of superconducting niobium nitride films by ion beam assisted sputtering

We use room temperature ion beam assisted sputtering to deposit niobium nitride thin films. Electrical and structural characterizations were performed by electric transport and magnetization measurements at variable temperatures, X-ray diffraction, and atomic force microscopy. Compared to reactive sputtering of niobium nitride, films sputtered in the presence of an ion beam show a remarkable increase in the superconducting critical temperature T c , while exhibiting lower sensitivity to nitrogen concentration during deposition. Thickness dependence of the superconducting critical temperature is comparable to films prepared by conventional methods at high substrate temperatures and is consistent with behavior driven by quantum size effects or weak localization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Comparative microscopic dynamics in a room-temperature ionic liquid confined in carbon pores characterized by reversible and irreversible ion immobilization

In search for the origin of irreversible ion immobilization under applied electric potential recently reported for a prototypical room-temperature ionic liquid electrolyte, [emim][Tf 2 N], confined in 1.5 nm carbon pores, here we compare the microscopic dynamics of cations in [emim][Tf 2 N] in the 1.5 nm and 6.7 nm carbon pores; in the latter, ion immobilization under applied electric potential is reversible. Using quasielastic neutron scattering, we find that the cation translational diffusivity is reasonably well defined on at least a nanometer length scale in the 6.7 nm pores, but not the 1.5 nm pores. Severely impeded microscopic dynamics of the confined electrolyte may be one of the factors differentiating the 1.5 nm pores from their larger counterparts and contributing to the irreversible immobilization of ions under applied electric potential.

Mamontov, Eugene↗

Nanoscale groove textured β -Ga 2 O 3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

β-Ga 2 O 3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga 2 O 3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has been demonstrated for efficient light management in β-Ga 2 O 3 optoelectronic applications yet. We hereby present nanoscale groove textured β-Ga 2 O 3 metal-semiconductor-metal photodiodes, enabled by the unique metal-assisted chemical etching (MacEtch) method at room temperature in liquid. Although the textured surface stoichiometry shows ~10% oxygen deficiency which results in a reduced Schottky barrier height and increased dark current, clear enhancement of the responsivity is demonstrated, compared to the planar untreated surface. Overall, the realization of MacEtch's applicability to β-Ga 2 O 3 opens the door for producing more sophisticated device structures for this material, without resorting to conventional dry etch and potential damage.

42 ENGINEERING↗