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At least 1,117 records · Page 62

The N II 2143-A dayglow from Spacelab 1

During the Spacelab 1 Shuttle mission (November 28 to December 7, 1983) spectral measurements were made in the ultraviolet which resolve the N(+)(S-5) doublet at 2143 A from the NO(1-0) gamma band at 2148 A in the upper thermosphere. The measured slant-path surface-brightness profile of the N(+) feature is well explained by photodissociative ionization of N2 with a yield of 0.2. The intensity of the N(+) feature relative to the NO(1-0) gamma band is dependent on the conditions prevailing at the time and location of the measurement. For the near-twilight mid-latitude measurements made in the upper thermosphere the N(+)(S-5) feature would contribute 20 to 75 percent of a low spectral resolution NO measurement.

Torr, M. R.↗

The frequency spectrum of C sub n sup 2 from MST radar data

In a recent study (Nastrom et al., 1986), the variability of the refractivity turbulence structure constant, C sub n(2), was examined using observations from the stratosphere troposphere/mesosphere stratosphere troposphere (ST/MST) radar at Poker Flat, Alaska, and Platteville, Colorado. Variations of C2 with height, season, and weather conditions were examined. Also, the autocorrelation function and the frequency distribution of C sub n(2) were studied, and it was shown that C sub n(2), follows a log-normal frequency distribution. One of the more tentative results given in that paper is a first look at the spectrum of log C sub n(2), as a function of frequency at Poker Flat. This spectrum appears to obey a power law relation with frequency, P(F) approx. F(k), with k near -5/3 at periods between about 4 hours and 6 days, and with k near -1 at shorter periods. Power law behavior of a spectrum often helps us to infer the underlying dynamics which give rise to this spectrum, and it is thus of some concern to establish further confidence in the spectral shape. The purpose here is to address these questions.

Nastrom, G. D.↗

Energetic N(+) ions in the interstellar medium

Energetic N(+) ions are produced in interstellar clouds by reactions of He(+) ions and N2 with sufficient energy to overcome the exoergicity of the reaction of N(+) with H2 and thereby from NH(+) ions. The reacting N(+) ions also slow down by elastic collisions with the ambient H2 molecules. The equilibrium energy distributions of the N(+) ions in a gas with temperature between 10 and 70 K are derived and the effective reaction rate coefficients are calculated. At 30 K, the rate coefficient is 1.6 x 10 to the -10th cu cm/sec.

Yee, J. H.↗

The relative line strength and intensity of the N II 2143 doublet

The doublet emission from N II at 2139.7 A and 2143.6 A was observed by a 1.4-m scanning spectrometer with 3.1 A resolution in the daytime, high-altitude thermosphere during moderate levels of solar activity. The spectrometer viewed the earth's limb 5 deg below the local horizontal to give a nominal tangent height of 152 km. Both sub band heads of the nitric oxide gamma band system were resolved in the data at the resolution used. The emission features from N II are clearly evident on the short wavelength shoulder of the (1, 0) band. Synthetic profiles of the (1, 0) gamma band and the (0, 3) delta band of nitric oxide were fitted to the data using a chi-square analysis. These contributions were removed from the data leaving a residual emission, considered to be the N II doublet. A chi-square minimization of the data relative to a synthetic intensity profile was done. The minimum was for a line strength ratio between the 2139 A and 2143 A lines of 0.58 + or - 0.08. The mean solar EUV flux deduced from the intensity of the N II emission in this experiment is lower than other reported observations, consistent with a lower solar activity level.

Bucsela, Eric J.↗

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗

Long term isothermal aging and thermal analysis of N-CYCAP polyimides

The N-CYCAP polyimides utilize a (2,2) paracyclophane endcap that polymerizes and does not generate volatile gases during the cure process. These polyimides have both high glass temperatures (390 C) and an onset of decomposition in air of 560 C. Thermal oxidative stability (TOS) weight loss studies show that replacing 25 percent by weight of the paraphenylene diamine in the polymer backbone with metaphenylene diamine improves the weight loss characteristics. N-CYCAP neat resin samples performed better than PMR-II-50 when exposed at 343 and 371 C in air for up to 1000 hours. Preliminary composite studies show that both PMR-II-50 and N-CYCAP have better thermal stability when fabricated on T-40R. Higher isothermal aging temperatures of longer aging times are needed to determine the differences in TOS between composite samples of PMR-II-50 and N-CYCAP polyimides.

Sutter, James K.↗

Execution phase (C/D) spectral band characteristics of the EOS moderate resolution imaging spectrometer-Nadir (Modis-N) facility instrument

The Moderate Resolution Imaging Spectrometer (Modis) observing facility on the Earth Observing System (EOS) is composed of two instruments: Modis-Nadir (N) and Modis-Tilt (T). Modis-N has 36 spectral bands between 0.4 and 14.2 microns, with spatial resolution between 250 and 1000 meters. Modis-T has 32 bands with 10-15 nm bandwidths between 0.4 and 0.9 microns. Modis-T scans fore and aft +/- 50 degrees. Both instruments scan cross-track so as to provide daily (Modis-N) or once every two days (Modis-T) coverage at 705-km altitude. Both instruments are entering into the execution phases of their development in 1990. The bands of the Modis-N hve been chosen so as to provide key observations of land, ocean, and atmosphere parameters that will provide key data sets assisting in gaining an improved understanding of global processes.

Salomonson, Vincent V.↗

MODIS-N - Moderate Resolution Imaging Spectrometer-Nadir

The Moderate Resolution Imaging Spectrometer-Nadir (MODIS-N) for the Earth Observing System (EOS) is intended to provide daily global surveys for the atmosphere, the oceans, and the land. To achieve this capability, MODIS-N requires an at-least 2300-km swath width, and provides geometric-instantaneous-fields-of-view (GIFOVs) that are either 856 m, 428 m, or 214 m in size with reference to a 705 km satellite altitude. The 214 m GIFOV may or may not be used depending on total data rate impact assessments traded with science needs. To achieve the data for the multiplicity of science investigations MODIS-N provides nominally 36 spectral bands that are selected for specific locations and bandpasses in the spectral range from the visible to the long wave infrared. Another driver of this instrument combination is the need for long term spectral and radiometric calibration stability. Specific calibration capabilities are to be built into MODIS-N to achieve calibration knowledge over a 5 year operational life.

Weber, Richard R.↗

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (Gaas), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub oc) of 1.05 V at 1 AM0, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured V sub oc of approximately 950 mV at 1 AM0, 300 K. However, to date, the best measured V sub oc for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AM0, 25 C. The V sub oc of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V sub oc, and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V sub oc of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗

k-out-of-n:G systems - Some cost considerations

The authors provide a tool that an engineer designing a subsystem can use to decide between one subsystem and a more reliable but more costly one. The authors provide methods for selecting redundancy levels in k-out-of-n:G systems in order to minimize particular cost considerations where the k-out-of-n:G system is a subsystem of a major system. The n and k are chosen to minimize the total cost of the subsystem plus the average loss due to subsystem failure. A BASIC program is available to determine the n and k which find this minimum. Five loss functions are considered, and illustrations are given.

Suich, Ronald C.↗

Electron-impact excitation of the n 1P levels of helium - Theory and experiment

New experimental electron-energy-loss data have been used to extract differential and integral cross sections for excitation of the 2 1P level, and for the overlapping (3 1P, 3 1D, 3 3D) levels of helium, at 30-, 50-, and 100-eV incident electron energies. First-order many-body theory (FOMBT) has been used to calculate the differential and integral cross sections for excitation of the n 1P (n = 2,...,6) levels of helium by electron impact, for incident electron energies from threshold to 500 eV. Detailed comparisons between these two new sets of data are made as well as comparisons with appropriate published experimental and theoretical results. A simple scaling relationship is derived from the FOMBT results for n = 2,...,6 that provides differential and integral cross sections for all symmetry final levels of helium with n = 6 or greater.

Cartwright, David C.↗

Detection of the N II 122 and 205 micron lines - Densities in G333.6-0.2

Measurements of the G333.6-0.2 H II region which include the first detection of the N II 122 micron forbidden line in an astronomical force and the first measurement of the N II 205 micron forbidden line in a discrete source are presented. Also considered are fine structure lines of forbidden S III, forbidden Fe III, forbidden Si II, forbidden Ne III, forbidden O III, forbidden N III, forbidden O I, and forbidden C II from 19 to 206 microns. It is concluded that the N II 122 and 205 microns forbidden line pair in a discrete astronomical source was detected for the first time. The emission in transitions is produced largely by low-ioninzation, low-density material not easily probed by other lines. Other FIR line pairs generally originate in higher density regions closer to the exciting force.

Colgan, Sean W. J.↗

A petabyte size electronic library using the N-Gram memory engine

A model library containing petabytes of data is proposed by Triada, Ltd., Ann Arbor, Michigan. The library uses the newly patented N-Gram Memory Engine (Neurex), for storage, compression, and retrieval. Neurex splits data into two parts: a hierarchical network of associative memories that store 'information' from data and a permutation operator that preserves sequence. Neurex is expected to offer four advantages in mass storage systems. Neurex representations are dense, fully reversible, hence less expensive to store. Neurex becomes exponentially more stable with increasing data flow; thus its contents and the inverting algorithm may be mass produced for low cost distribution. Only a small permutation operator would be recalled from the library to recover data. Neurex may be enhanced to recall patterns using a partial pattern. Neurex nodes are measures of their pattern. Researchers might use nodes in statistical models to avoid costly sorting and counting procedures. Neurex subsumes a theory of learning and memory that the author believes extends information theory. Its first axiom is a symmetry principle: learning creates memory and memory evidences learning. The theory treats an information store that evolves from a null state to stationarity. A Neurex extracts information data without a priori knowledge; i.e., unlike neural networks, neither feedback nor training is required. The model consists of an energetically conservative field of uniformly distributed events with variable spatial and temporal scale, and an observer walking randomly through this field. A bank of band limited transducers (an 'eye'), each transducer in a bank being tuned to a sub-band, outputs signals upon registering events. Output signals are 'observed' by another transducer bank (a mid-brain), except the band limit of the second bank is narrower than the band limit of the first bank. The banks are arrayed as n 'levels' or 'time domains, td.' The banks are the hierarchical network (a cortex) and transducers are (associative) memories. A model Neurex was built and studied. Data were 50 MB to 10 GB samples of text, data base, and images: black/white, grey scale, and high resolution in several spectral bands. Memories at td, S(m(sub td)), were plotted against outputs of memories at td-1. S(m(sub td)) was Boltzman distributed, and memory frequencies exhibited self-organized criticality (SOC); i.e., 'l/f(sup beta)' after long exposures to data. Whereas output signals from level n may be encoded with B(sub output) = O(-log(2)f(sup beta)) bits, and input data encoded with B(sub input) = O((S(td)/S(td-1))(sup n)), B(sup output)/B(sub input) is much less than 1 always, the Neurex determines a canonical code for data and it is a lossless data compressor. Further tests are underway to confirm these results with more data types and larger samples.

Bugajski, Joseph M.↗

The 1200 K compressive properties of N-containing NiAl

As part of a series of experiments to understand the role of N on the strength of NiAl, a heat of NiAl was enriched with N by melting and atomization to powder in a nitrogen atmosphere. Following consolidation of the powder by hot extrusion, 1200 K compressive properties were measured in air. Within the range of strain rates examined, 10(exp -3) to 10(exp -9) s(exp -1), the strength of the N-enriched NiAl was greater than that of a simple 15 micron grain size polycrystalline, binary NiAl alloy. For the most part the overall improvement in strength is ascribed to the fine grain size of the N-doped NiAl rather than the alloy chemistry; however, the alloy displayed a complex behavior exhibiting both weakening effects as well as strengthening ones.

Whittenberger, J. Daniel↗

Theoretical Basis for Estimated Test Times and Conditions for Drop Tower and Space-Based Droplet Burning Experiments With Methanol and N-Heptane

In order to develop an extensive envelope of test conditions for NASA's space-based Droplet Combustion Experiment (DCE) as well those droplet experiments which can be performed using a drop tower, the transient vaporization and combustion of methanol and n-heptane droplets were simulated using a recently developed fully time-dependent, spherically symmetric droplet combustion model. The transient vaporization of methanol and n-heptane was modeled to characterize the instantaneous gas phase composition surrounding the droplet prior to the introduction of an ignition source. The results for methanol/air showed that the entire gas phase surrounding a 2 mm methanol droplet deployed in zero-g .quickly falls outside the lean flammability limit. The gas phase surrounding an identically-sized n-heptane droplet, on the other hand, remains flammable. The combustion of methanol was then modeled considering a detailed gas phase chemical kinetic mechanism (168 steps, 26 species) and the effect of the dissolution of flame-generated water into the liquid droplet. These results were used to determine the critical ignition diameter required to achieve quasi-steady droplet combustion in a given oxidizing environment. For droplet diameters greater than the critical ignition diameter, the model predicted a finite diameter at which the flame would extinguish. These extinction diameters were found to vary significantly with initial droplet diameter. This phenomenon appears to be unique to the transient heat transfer, mass transfer and chemical kinetics of the system and thus has not been reported elsewhere to date. The extinction diameter was also shown to vary significantly with the liquid phase Lewis number since the amount of water present in the droplet at extinction is largely governed by the rate at which water is transported into the droplet via mass diffusion. Finally, the numerical results for n-heptane combustion were obtained using both 2 step and 96 step semi-emperical chemical kinetic mechanisms. Neither mechanism exhibited the variation of extinction diameter with initial diameter.

Marchese, Anthony J.↗

Measurement of Charge Transfer Rate Coefficient Between Ground-State N(2+) Ion and He at Electron-Volt Energies

The charge transfer rate coefficient for the reaction N(2+)(2p(sup 2)P(sup 0)) + He yields products is measured by recording the time dependence of the N(2+) ions stored in an ion trap. A cylindrical radio-frequency ion trap was used to store N(2+) ions produced by laser ablation of a solid titanium nitride target. The decay of the ion signals was analyzed by single exponential least-squares fits to the data. The measured rate coefficient is 8.67(0.76) x 10(exp -11)sq cm/s. The N(2+) ions were at a mean energy of 2.7 eV while He gas was at room temperature, corresponding to an equivalent temperature of 3.9 x 10(exp 3) K. The measured value is in good agreement with a recent calculation.

Fang, Z.↗

1200 K Compressive Properties of N-Containing Nial

As part of a series of experiments to understand the role of N on the strength of NiAl, a heat of NiAl was enriched with N by melting and atomization to powder in a nitrogen atmosphere. Following consolidation of the powder by hot extrusion, 1200 K compressive properties were measured in air. Within the range of strain rates examined, 10 exp -3 to 10 exp -9/s, the strength of the N-enriched NiAl was greater than that of a simple 15 micron grain size polycrystalline, binary NiAl alloy. For the most part the overall improvement in strength is ascribed to the fine grain size of the N-doped NiAl rather than the alloy chemistry; however, the alloy displayed a complex behavior exhibiting both weakening effects as well as strengthening ones.

Whittenberger, J. D.↗

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗