Partitioning of tramp elements Cu and Si in a Ni-based superalloy and their effect on creep properties
An alloy's processing history, including melting, remelting or the choice of stock material, affects its purity and eventually involves tramp element pickup or retention. Herein, variants of a novel Ni-based superalloy were manufactured with different levels of purity. The so-called low purity alloys contained 0.138 wt. % Cu and 0.019 wt. % Si while the Cu and Si levels were below x-ray fluorescence (XRF) detection limits of 0.003 and 0.010 wt. %, respectively, in the high purity ingots. Atom-probe tomography (APT) was carried out and revealed Si partitioning at the following interfaces: grain boundaries, MC carbide/γ, M 3 B 2 boride/$γ$ and M 3 B 2 boride/$γ$'. Copper was found to primarily segregate to the $γ$' precipitates. An average of 2.4 × decrease in creep life and 4.3 × decrease in creep ductility was measured in the low purity alloys, which was attributed to the embrittlement caused by Si segregation to grain boundaries. Furthermore, the positive effect of B on the creep properties was mitigated by the presence of Si. Thermodynamic predictions for the matrix and γ' precipitate compositions represented the trends observed experimentally although the extent of preferential partitioning lacks accuracy. Monte Carlo simulations were performed to describe the partitioning of Cu and Si atoms to either $γ$ or $γ$' phases.