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Results for “ION IMPLANTATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe

The formation of fluorine-vacancy (FV) complexes in strained Si-SiGe-Si multilayer structures and relaxed SiGe layers of varying Ge content has been investigated using variable-energy positron annihilation spectroscopy, including Doppler-broadened spectra ratio curves. It has been found that in all sample types there are two distinct regions defined only by the damage created by the implanted F ions. The first, shallower region (from the surface to a depth of {approx}200 nm) was found to contain a mixture of undecorated vacancies and FV complexes; there is no correlation between the vacancy or F concentration in this region and the Ge content. The multi-layer samples may also have O contamination that is not present in the relaxed samples. The second region (at depths {approx}200-440 nm) contains primarily FV complexes in all samples. In the multi-layer samples secondary ion mass spectrometry (SIMS) results show peaks of F accumulating in, or at the interfaces of, each SiGe multi-layer; the FV complexes, however, are distributed over depths similar to those in the relaxed samples, with some localization at the SiGe layer located within the second region. The positron response is primarily to FV complexes formed by the F implant in all samples. The F: FV ratios are approximately 3-7: 1 in the relaxed samples. Positrons appear to be relatively insensitive to the largest of the F SIMS peaks which lies beyond the second region. This is probably because the F has filled all the open volume at the SiGe layer, leaving no positron trapping sites.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Field-induced spin polarization in the lightly Cr-substituted layered antiferromagnet NiP S 3

Tuning magnetic properties in layered magnets is an important route to realize novel phenomenon related to two-dimensional (2D) magnetism. Recently, tuning antiferromagnetic (AFM) properties through substitution and intercalation techniques has been widely studied in MPX 3 compounds. Interesting phenomena, such as diverse AFM structures and even the signatures of ferrimagnetism, have been reported. However, long-range ferromagnetic (FM) ordering has remained elusive. Here, in this work, we explored the magnetic properties of the Cr-substituted NiP S 3 . We found that Cr substitution is extremely efficient in controlling spin orientation in NiP S 3 . Our study reveals a field-induced spin polarization in lightly (9%) Cr-substituted NiP S 3 , which is likely attributed to the attenuation of AFM interactions and magnetic anisotropy due to Cr doping. Our work provides a possible strategy to achieve FM phase in AFM MPX 3 , which could be useful for investigating 2D magnetism as well as potential device applications.

2-dimensional systems↗
DOE OSTI2014

Local modification of the magnetic vortex-core velocity by gallium implantation

The dynamics of magnetic vortices in microsquares with local modifications of magnetic parameters and thickness are investigated. By implanting gallium ions with focussed ion beam into permalloy thin-film elements, we have locally tailored their magnetic properties and the layer thickness. The vortex of the Landau domain pattern of a square is resonantly excited to a gyrotropic motion and crosses regions with and without implantation. With time-resolved scanning transmission x-ray microscopy, we observe an abrupt change in the vortex velocity close to the borders between the two regions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Crystal orientation effects on helium ion depth distributions and adatom formation processes in plasma-facing tungsten

We present atomistic simulations that show the effect of surface orientation on helium depth distributions and surface feature formation as a result of low-energy helium plasma exposure. We find a pronounced effect of surface orientation on the initial depth of implanted helium ions, as well as a difference in reflection and helium retention across different surface orientations. Our results indicate that single helium interstitials are sufficient to induce the formation of adatom/substitutional helium pairs under certain highly corrugated tungsten surfaces, such as (1 1 1)-orientations, leading to the formation of a relatively concentrated layer of immobile helium immediately below the surface. The energies involved for helium-induced adatom formation on (1 1 1) and (2 1 1) surfaces are exoergic for even a single adatom very close to the surface, while (0 0 1) and (0 1 1) surfaces require two or even three helium atoms in a cluster before a substitutional helium cluster and adatom will form with reasonable probability. This phenomenon results in much higher initial helium retention during helium plasma exposure to (1 1 1) and (2 1 1) tungsten surfaces than is observed for (0 0 1) or (0 1 1) surfaces and is much higher than can be attributed to differences in the initial depth distributions alone. The layer thus formed may serve as nucleation sites for further bubble formation and growth or as a source of material embrittlement or fatigue, which may have implications for the formation of tungsten “fuzz” in plasma-facing divertors for magnetic-confinement nuclear fusion reactors and/or the lifetime of such divertors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory

The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10{sup 20} cm{sup –3}. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The structure of the NiTi surface layers after the ion-plasma alloying of Ta

The effect of the Ta-ion beam implantation on the micro- and nanostructures of the surface layers of NiTi alloy was investigated using transmission electron microscopy and Auger spectroscopy. It is found that the elements are distributed non-uniformly with depth, so that the sublayers differ significantly in structure. The modified surface layer was found to consist of two sublayers, i.e. the upper oxide layer and the lower-lying amorphous layer that contains a maximum of Ta atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Incorporation of erbium ions into thin-film lithium niobate integrated photonics

As an active material with favorable linear and nonlinear optical properties, thin-film lithium niobate has demonstrated its potential in integrated photonics. Integration with rare-earth ions, which are promising candidates for quantum memories and transducers, will enrich the system with new applications in quantum information processing. In this work, we investigate the optical properties at 1.5 μm wavelengths of rare-earth ions (Er 3+ ) implanted in thin-film lithium niobate waveguides and micro-ring resonators. Optical quality factors near a million after post-annealing show that ion implantation damage can be repaired. The transition linewidth and fluorescence lifetime of erbium ions are characterized. The ion-cavity coupling is observed through a Purcell enhanced fluorescence from which a Purcell factor of 3.8 ± 0.5, compared with waveguide lifetime, is extracted. This platform is compatible with top-down lithography processes and leads to a scalable path for controlling spin-photon interfaces in photonic circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2014

III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics

The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Surface characterization of Zr/Ti/Nb tri-layered films deposited by magnetron sputtering on Si(111) and stainless steel substrates

Among metallic materials, commercially pure titanium and titanium alloys are very often used as biomaterials for implants. Among these alloys, titanium-aluminum-vanadium alloy Ti-6 A-4 V is one of the most commonly used due to its excellent biocompatibility and ability to allow bone-implant integration. A new class of Ti alloys employs Zr for solid-solution hardening and Nb as {beta}-phase stabilizer. Metals such as Ti, Nb, and Zr-known as valve metals-usually have their surfaces covered by a thin oxide film that forms spontaneously in air. This oxide film constitutes a barrier between the metal and the medium. The Ti-Nb-Zr alloys have mechanical and corrosion resistance characteristics which make them suitable for use as implants. Tri-layered films of Ti-Nb-Zr were deposited on both Si(111) and stainless steel (SS) substrates using dc magnetron sputtering equipment, under an argon atmosphere according to the following methodology: a 100 nm thick layer of Nb was deposited on the substrate, followed by a 200 nm thick layer of Ti, and finally a 50 nm thick layer of Zr, on top of the multilayer stack. The morphology and chemical composition of the films were analyzed by atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (ToF-SIMS). AFM images showed that the Zr/Ti/Nb tri-layer films presented nanostructured grains and low roughness. The ToF-SIMS depth profiles confirmed the formation of a three-layered film on Si(111) with well-defined and sharp interfaces between the layers, while the deposition on the stainless steel substrate caused slight intermixing at the different alloy/Nb, Nb/Ti and Ti/Zr interfaces, reflecting the greater roughness of the raw substrate. The XPS results for the Zr/Ti/Nb layers deposited on Si(111) and SS confirmed that the outermost layer consisted of Zr only, with a predominance of ZrO{sub 2}, as the metal layer is passivated in air. An oxidation treatment of 1000 Degree-Sign C in air for 1 h for the multilayer stacks caused some dewetting with Si(111) films, and alloying in the layers. The latter effect was more pronounced for the stainless steel substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Near-surface and bulk behavior of Ag in SiC

The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the nearsurface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85~1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in 2 SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

Ag↗
DOE OSTI2015

Interaction of human endothelial cells and nickel-titanium materials modified with silicon ions

The paper studies the influence of chemical and phase compositions of NiTi surface layers modified with Si ions by plasma immersion implantation on their interaction with endothelial cells. It is shown that certain technological modes of Si ion implantation enhance the adhesion, proliferation, and viability of endothelial cells. It is found that the Si-modified NiTi surface is capable of stimulating the formation of capillary-like structures in the cell culture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 10{sup 14} to 1 × 10{sup 16 }cm{sup −2}. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 10{sup 15 }cm{sup −2} before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory

The microcathodoluminescence (MCL) and photoreflection spectra of CdS:O layers implanted with oxygen ions to 4 Multiplication-Sign 10{sup 20} cm{sup -3} are investigated. Used method of MCL spectroscopy yields information only about the implanted-layer volume. Exciton MCL spectra, which allow one to determine the concentration of dissolved oxygen in the CdS:O layers and the influence of deviation of the substrates from stoichiometry, are recorded. The homogeneity of the ion-implanted layers is studied by cathodoluminescence (CL) scanning electron microscopy. The relationship between light-emitting areas and the luminescence band at {approx}630 nm is established. The reason for enhancement of this band upon radiation annealing is revealed and its nature as the luminescence of F{sup +} centers in CdS is confirmed. New photoreflection spectroscopy data are obtained, which describe the specific behavioral features of oxygen on the layer surface as an isoelectronic impurity in highly mismatched alloys (HMAs). It is shown that sulfur completely bonds and removes oxygen from CdS:O. Oxygen-free CdS remains on the surface in the form of nanoparticles, the size of which depends on the oxygen concentration in the CdS:O layer bulk. The results obtained are in agreement with the predictions of band anticrossing theory.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Angle performance on optima MDxt

Angle control on medium current implanters is important due to the high angle-sensitivity of typical medium current implants, such as halo implants. On the Optima MDxt, beam-to-wafer angles are controlled in both the horizontal and vertical directions. In the horizontal direction, the beam angle is measured through six narrow slits, and any angle adjustment is made by electrostatically steering the beam, while cross-wafer beam parallelism is adjusted by changing the focus of the electrostatic parallelizing lens (P-lens). In the vertical direction, the beam angle is measured through a high aspect ratio mask, and any angle adjustment is made by slightly tilting the wafer platen prior to implant. A variety of tests were run to measure the accuracy and repeatability of Optima MDxt's angle control. SIMS profiles of a high energy, channeling sensitive condition show both the cross-wafer angle uniformity, along with the small-angle resolution of the system. Angle repeatability was quantified by running a channeling sensitive implant as a regular monitor over a seven month period and measuring the sheet resistance-to-angle sensitivity. Even though crystal cut error was not controlled for in this case, when attributing all Rs variation to angle changes, the overall angle repeatability was measured as 0.16 Degree-Sign (1{sigma}). A separate angle repeatability test involved running a series of V-curves tests over a four month period using low crystal cut wafers selected from the same boule. The results of this test showed the angle repeatability to be <0.1 Degree-Sign (1{sigma}).

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

Characterisation of radiation damage in W and W-based alloys from 2MeV self-ion near-bulk implantations

The displacement damage induced in bulk W and W-5 wt.% Re and W-5 wt.% Ta alloys by 2 MeV W + irradiation to doses 3.3×10 17 - 2.5×10 19 W + /m 2 at temperatures ranging from 300 to750°C has been characterized by transmission electron microscopy. An automated sizing and counting approach based on Image J has been proposed and performed for all irradiation data. In all cases the damage comprised dislocation loops, mostly of interstitial type, with Burgers vectors b = ½<111> (> 60%) and b = <100>. The diameters of loops did not exceed 20 nm, with the majority being ≤ 6 nm. The loop number density varied between 10 22 and 10 23 loops/m 3 . With increasing irradiation temperature, the loop size distributions shifted towards larger sizes, and there was a substantial decrease in loop number densities. The damage microstructure was less sensitive to dose than to temperature. Under the same irradiation conditions, loop number densities in the alloys were higher than in pure W but loops were smaller. In grains with normals close to z = <001>, loop strings developed in W at temperatures ≥ 500°C and doses ≥ 1.2 dpa, but such strings were not observed in the W-Re or W-Ta alloys. However, in other grain orientations complex structures appeared in all materials and dense dislocation networks formed at higher doses.

36 MATERIALS SCIENCE↗