Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “HALL EFFECT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Strain and Defect-Tailored Magnetotransport in NiCo 2 O 4 Thin Films and Freestanding Membranes

Magnetic spinel NiCo 2 O 4 is promising for developing spintronic applications due to its high magnetic Curie temperature, high spin polarization, fast spin dynamics, and strain-tunable magnetic anisotropy, while its electronic and magnetic properties depend sensitively on epitaxial strain and disorder. Here, in this study, we use epitaxial NiCo 2 O 4 thin films and freestanding NiCo 2 O 4 membranes as model systems to reveal the complex interplay of strain and defects in determining the metallicity and magnetotransport properties of the ferrimagnetic spinel. NiCo 2 O 4 on perovskite substrates and NiCo 2 O 4 membranes exhibit insulating behaviors and spin canting, in sharp contrast to the metallic NiCo 2 O 4 films on spinel substrates that possess strong perpendicular magnetic anisotropy. Anisotropic magnetoresistance studies provide critical information about disorder-induced spin scattering and strain-induced tetragonal magnetocrystalline anisotropy, which is corroborated by comprehensive electron microscopy characterizations. Our study presents a promising venue for designing flexible magnetic memory, sensor, and spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Unusual plastic strain-induced phase transformation phenomena in silicon

Pressure-induced phase transformations (PTs) in Si, the most important electronic material, have been broadly studied, whereas strain-induced PTs have never been studied in situ. Here, we reveal in situ various important plastic strain-induced PT phenomena. A correlation between the direct and inverse Hall-Petch effect of particle size on yield strength and pressure for strain-induced PT is predicted theoretically and confirmed experimentally for Si-I→Si-II PT. For 100 nm particles, the strain-induced PT Si-I→Si-II initiates at 0.3 GPa under both compression and shear while it starts at 16.2 GPa under hydrostatic conditions. The Si-I→Si-III PT starts at 0.6 GPa but does not occur under hydrostatic pressure. Pressure in small Si-II and Si-III regions of micron and 100 nm particles is ~5–7 GPa higher than in Si-I. For 100 nm Si, a sequence of Si-I → I + II → I + II + III PT is observed, and the coexistence of four phases, Si-I, II, III, and XI, is found under torsion. Retaining Si-II and single-phase Si-III at ambient pressure and obtaining reverse Si-II→Si-I PT demonstrates the possibilities of manipulating different synthetic paths. The obtained results corroborate the elaborated dislocation pileup-based mechanism and have numerous applications for developing economic defect-induced synthesis of nanostructured materials, surface treatment (polishing, turning, etc.), and friction.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Spin phase diagram of the interacting quantum Hall liquid

Measurement of the ground-state spin polarization of quantum systems offers great potential for the discovery and characterization of correlated electronic states. However, spin polarization measurements have mainly involved optical and NMR techniques that perturb the delicate ground states and, for quantum Hall systems, have provided conflicting results. In this work we present spin-resolved pulsed tunnelling (SRPT) that precisely determines the phase diagram of the ground-state spin polarization as a function of magnetic field and Landau level (LL) filling factor ($ν$) with negligible perturbation to the system. Our phase diagram shows a variety of polarized, unpolarized and topological spin states in the lowest (N = 0) LL, which can largely be described by a weakly interacting composite fermion (CF) model7. However, the phase diagram shows unexpected behaviour in the N = 1 LL. We observe fully polarized $ν$ = 5/2 and 8/3 states but a partially depolarized $ν$ = 7/3 state. This behaviour deviates from the conventional theoretical picture of weakly interacting fractional quasiparticles, but instead suggests unusual electronic correlations and the possibility of new non-Abelian phases. The results establish SRPT as a powerful technique for investigating correlated electron phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Energy-Casimir, dynamically accessible, and Lagrangian stability of extended magnetohydrodynamic equilibria

The formal stability analysis of Eulerian extended magnetohydrodynamics (XMHD) equilibria is considered within the noncanonical Hamiltonian framework by means of the energy-Casimir variational principle and the dynamically accessible stability method. Specifically, we find explicit sufficient stability conditions for axisymmetric XMHD and Hall MHD (HMHD) equilibria with toroidal flow and for equilibria with arbitrary flow under constrained perturbations. The dynamically accessible, second-order variation of the Hamiltonian, which can potentially provide explicit stability criteria for generic equilibria, is also obtained. Moreover, we examine the Lagrangian stability of the general quasineutral two-fluid model written in terms of MHD-like variables, by finding the action and the Hamiltonian functionals of the linearized dynamics, working within a mixed Lagrangian-Eulerian framework. Upon neglecting electron mass, we derive a HMHD energy principle, and in addition, the perturbed induction equation arises from Hamilton’s equations of motion in view of a consistency condition for the relation between the perturbed magnetic potential and the canonical variables.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Carrier mobilities of (001) cadmium arsenide films

We investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd 3 As 2 ) grown by molecular beam epitaxy on lattice-matched III–V Al x In 1-x Sb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on their carrier mobilities. We show that only a minority of the threading dislocations present in the buffer layers extend into the Cd 3 As 2 films. Threading dislocations are shown to reduce the mobilities of carriers residing in the topological surface states, while bulk transport was unaffected by a change in the dislocation density across an order of magnitude. Thick (001) Cd 3 As 2 films exhibit electron mobilities of up to 41 000 cm 2 V -1 s -1 at 2 K. The results provide insights into the influence of extended defects on the transport properties of a prototype topological semimetal.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films

The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a baking and plasma pretreatment of the substrate prior to the GaN plasma-enhanced atomic layer deposition (PE-ALD). In this work, it is found that such pretreatment makes the GaN films grow coherently on sapphire substrates, following a layer-by-layer growth mechanism. The deposited GaN film shows high crystalline quality, a sharp GaN/sapphire interface, and a flat surface. The possibility of growing high-quality GaN epilayers in this way broadens the range of applications for PE-ALD in GaN-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Temperature-dependent anisotropic magnetoresistance and spin-torque-driven vortex dynamics in a single microdisk

Spin-orbit-torque-driven dynamics have recently gained interest in the field of magnetism due to the reduced requirement of current densities and an increase in efficiency, as well as the ease of implementation of different devices and materials. From a practical point of view, the low-frequency dynamics below 1GHz is particularly interesting since dynamics associated with magnetic domains lie in this frequency range. While spin-torque excitation of high-frequency modes has been extensively studied, the intermediate low-frequency dynamics have received less attention, although spin torques could potentially be used for both manipulation of the spin texture and the excitation of dynamics. In this paper, we demonstrate that it is possible to drive magnetic vortex dynamics in a single microdisk by spin-Hall torque at varying temperatures and relate the results to transport properties. We find that the gyrotropic mode of the core couples to the low-frequency microwave signal and produces a measurable voltage. The dynamic measurements are in agreement with magnetic transport measurements and are supported by micromagnetic simulations. Our results open the door for integrating magnetic vortex devices in spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Hall conductance and the statistics of flux insertions in gapped interacting lattice systems

We study charge transport for zero-temperature infinite-volume gapped lattice systems in two dimensions with short-range interactions. We show that the Hall conductance is locally computable and is the same for all systems that are in the same gapped phase. Here, we provide a rigorous version of Laughlin’s flux-insertion argument, which shows that for short-range entangled systems, the Hall conductance is an integer multiple of e 2 / h . We show that the Hall conductance determines the statistics of flux insertions. For bosonic short-range entangled systems, this implies that the Hall conductance is an even multiple of e 2 / h . Finally, we adapt a proof of quantization of the Thouless charge pump to the case of infinite-volume gapped lattice systems in one dimension.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Topological materials by molecular beam epitaxy

Topology appears across condensed matter physics to describe a wide array of phenomena which could alter, augment, or fundamentally change the functionality of many technologies. Linking the basic science of topological materials to applications requires producing high-quality thin films. This will enable combining dissimilar materials while utilizing dimensionality, symmetry, and strain to create or control the electronic phase, as well as platforms to fabricate novel devices. Yet, one of the longstanding challenges in the field remains understanding and controlling the basic material properties of epitaxial thin films. Here, we discuss how understanding the fundamental properties of topological materials grown by molecular beam epitaxy (MBE) is key to deepening the knowledge of the basic physics, while developing a new generation of topological devices. A focus will be on the MBE growth of intrinsic materials, creation, and control of superconducting and magnetic topological phases. Addressing these questions in the coming decade will undoubtedly uncover many surprises as new materials are discovered and their growth as high-quality thin films is refined.

2d quantum materials↗
DOE OSTI2020

Sample shape and boundary dependence of measured transverse thermal properties

In spite of increased interest in thermal Hall measurements for the analysis of insulating quantum materials, there remains large uncertainty in such measurements due to contact misalignment. In this paper, we propose that sample geometry and uncertain boundary conditions provide an additional source of uncertainty in the measurement of $D_{xy}$ or $κ_{xy}$. By running simple simulations in an open source finite-element solver, we demonstrate that measured $D_{xy}$ can be changed by a non-negligible fraction in samples with similar width and length. This geometric corrective factor depends on the distinction between a uniform heat flow and constant temperature boundary couplings to a bath. Sample geometry and boundary conditions can be accounted for through simulation or by using rectangular samples to make thermal Hall measurements more reliable and reproducible. Finally, we detail a contactless optical method for measuring $D_{xy}$ based on an existing photothermal microscope technique. This method is insensitive to the longitudinal diffusivity pollution caused by contact misalignment.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Pure spin current phenomena

Spintronic phenomena and devices have evolved from exploiting spin-polarized current to pure spin current. A pure spin current can more efficiently deliver spin angular momentum with fewer or no charge carriers, enabling spin–orbit torque switching in ferromagnets. The prospects of antiferromagnetic spintronics, especially electrical switching, remain perplexing and controversial. Here, we describe some recent advances, outstanding issues, challenges, and prospects of pure spin current.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla

Here, using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum limit can be exceeded (Landau level filling factor v <1) and show evidence for the v =2/3 fractional quantum Hall state. Simultaneous optical and transport measurements reveal synchronous quantum oscillations of both the PL intensity and the longitudinal resistivity in the integer quantum Hall regime. PL spectra directly reveal the dispersion of occupied Landau levels in the 2DEG and, therefore, the electron mass. These results demonstrate the utility of high (pulsed) magnetic fields for detailed measurements of quantum phenomena in high-density 2DEGs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Influence of magnetic angle on the E × B drift in a magnetic presheath

In this work, we provide experimental measurements of the E X B flow above a non-magnetic, absorbing boundary in a magnetized plasma. Measurements are taken as a function of the angle between the background magnetic field and the boundary normal. The measurements are compared to computational predictions for oblique magnetic fields based on Chodura's model. Ion flow measurements were obtained with laser induced fluorescence and the presheath potential structure was measured with an emissive probe. The ions were found to accelerate to nearly 30% of the sound speed parallel to the boundary at oblique angles of the magnetic field (~80°) and the ion speed at the electrostatic sheath edge was found to decrease with angle. The edge of the magnetic presheath has been experimentally determined based on the appearance of the E X B drift and is found to be independent of the angle of the magnetic field. We also demonstrate that laser induced fluorescence is suitable as a non-perturbative diagnostic to measure the electric field in a magnetized sheath.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

On the mechanism of ionization oscillations in Hall thrusters

Low-frequency ionization oscillations involving plasma and neutral density (breathing modes) are the most violent perturbations in Hall thrusters for electric propulsion. Because of its simplicity, the zero-dimensional (0D) predator–prey model of two nonlinearly coupled ordinary differential equations for plasma and neutral density has often been used for the characterization of such oscillations and scaling estimates. In this work, we investigate the properties of its continuum analog, the one-dimensional (1D) system of two nonlinearly coupled equations in partial derivatives (PDEs) for plasma and neutral density. This is a more general model, of which the standard 0D predator–prey model is a special limit case. We show that the 1D model is stable and does not show any oscillations for the boundary conditions relevant to Hall thrusters and the uniform ion velocity. We then propose a reduced 1D model based on two coupled PDEs for plasma and neutral densities that is unstable and exhibit oscillations if the ion velocity profile with the near-the-anode back-flow (toward the anode) region is used. Comparisons of the reduced model with the predictions of the full model that takes into account the self-consistent plasma response show that the main properties of the breathing mode are well captured. In particular, it is shown that the frequency of the breathing mode oscillations is weakly dependent on the final ion velocity but shows a strong correlation with the width of the ion back-flow region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

dc electrical conductivity in strongly magnetized plasmas

A generalized Ohm's law is derived to treat strongly magnetized plasmas in which the electron gyrofrequency significantly exceeds the electron plasma frequency. Here, strong magnetization of electrons causes the frictional drag between electrons and ions due to Coulomb collisions to shift, producing an additional transverse resistivity term in the generalized Ohm's law that is perpendicular to both the current ($J$) and the Hall ($JxB$) direction. In the limit of very strong magnetization the parallel resistivity is found to increase by a factor of 3/2, and the perpendicular resistivity by a factor of $\frac{3}{4} \ln (m_i/m_e)$, where $m_i$ and $m_e$ are the ion and electron masses. These results suggest that strong magnetization significantly changes the magnetohydrodynamic evolution of a plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Charge carrier mobility of halide perovskite single crystals for ionizing radiation detection

Halide perovskites have recently emerged as promising semiconductor materials for several applications including solar cells, light-emitting diodes (LEDs), and radiation detectors. The charge carrier transport properties, which could be evaluated by the mobility-lifetime (mu-tau or μ-г) product, serve an important role for the development of halide perovskites for radiation detection applications. In this perspective, we firstly explain the charge transport mechanism and the limiting factors that determine the intrinsic charge carrier mobility in halide perovskite single crystals. Then, we overview the techniques and methods that have been employed for evaluating the charge carrier mobility (for both electrons and holes). Lastly, we discuss the discrepancy between the experimentally determined carrier mobility from the literature for halide perovskite single crystals and a perspective on future developments for carrier mobility enhancement is provided.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Ultrafast valley polarization in bilayer graphene

We study theoretically the interaction of a bilayer graphene with a circularly polarized ultrafast optical pulse of a single oscillation at an oblique incidence. The normal component of the pulse breaks the inversion symmetry of the system and opens up a dynamical bandgap due to which a valley-selective population of the conduction band becomes sensitive to the angle of incident of the pulse. We show that the magnitude of the valley polarization can be controlled by the angle of incidence, the amplitude, and the angle of in-plane polarization of the chiral optical pulse. Subsequently, a sequence of a circularly polarized pulse followed by a linearly polarized femtosecond-long pulse can be used to control and probe the valley polarization created by the preceding pulse. Our protocol provides a favorable platform to design ultrafast all-optical valleytronic information processing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

A high-conductivity two-dimensional (2D) hole gas is the enabler of wide-bandgap p-channel transistors. Compared to commonly used AlN template substrates with high dislocation densities, the recently available single-crystal AlN substrates are promising to boost the speed and power handling capability of p-channel transistors based on GaN/AlN 2D hole gases (2DHGs) thanks to the much lower dislocation densities and the absence of thermal boundary resistance. Using plasma-assisted molecular beam epitaxy, we report the observation of polarization-induced high-density 2DHGs in undoped pseudomorphic GaN/AlN heterostructures on the single-crystal AlN substrates with high structural quality and atomic steps on the surface. The high-density 2DHG persists down to cryogenic temperatures with a record high mobility exceeding 280 cm 2 /V s and a density of 2.2 × 10 13 /cm 2 at 10 K. These results shed light on aspects of improving 2D hole mobilities and indicate significant potential of GaN/AlN 2DHG grown on bulk AlN substrates for future high performance wide-bandgap p-channel transistors.

36 MATERIALS SCIENCE↗