Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “FILMS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,117 records · Page 62

Characterization of niobium-doped titania epitaxial films deposited by metalorganic chemical vapor deposition

Highlights: • The undoped and Nb-doped TiO{sub 2} films were deposited on SrTiO{sub 3} (100) substrates. • The epitaxial growth relationship between TiO{sub 2} film and the substrate was confirmed. • The microstructures of the films were explored. • The electrical and optical properties of the films were revealed. - Abstract: Titania (TiO{sub 2}) films with different niobium (Nb) doping concentrations were deposited on SrTiO{sub 3} (STO) (100) substrates by metalorganic chemical vapor deposition (MOCVD). The crystal structures, surface morphologies, electrical and optical properties of the Nb-doped TiO{sub 2} (TiO{sub 2}:Nb) films varying with Nb content were investigated. The single crystal TiO{sub 2} films with anatase structure were obtained at low Nb doping levels. The highest Hall mobility of the prepared films reached as high as 16.50 cm{sup 2} V{sup −1} s{sup −1}. The lowest resistivity of 5.75 × 10{sup −2} Ω cm with a Hall mobility of 7.40 cm{sup 2} V{sup −1} s{sup −1} and a carrier concentration of 1.47 × 10{sup 19} cm{sup −3} were obtained from the 1.20% Nb-doped TiO{sub 2} film. This resistivity was about 6 orders of magnitude lower than the undoped TiO{sub 2} film. Moreover, all the deposited films exhibited high average transmittances of over 88% in the visible wavelength range.

36 MATERIALS SCIENCE↗

Structure and properties of ternary manganese nitride Mn{sub 3}CuN{sub y} thin films fabricated by facing target magnetron sputtering

Graphical abstract: This figure reveals the dependence of the texture coefficient TC{sub (111)} and TC{sub (200)} of the Mn{sub 3}CuN{sub y} thin films on T{sub sub}. These results indicate that the preferred orientation of the Mn{sub 3}CuN{sub y} thin films dramatically changed from (1 1 1) to (2 0 0) with the increase of T{sub sub}. In one word, the orientation of Mn{sub 3}CuN{sub y} thin film can be tailored by adjusting the magnetron sputtering processing parameters and substrate. It is the first time to report the deposition of Mn{sub 3}CuN{sub y} thin films on single crystal Si (1 0 0) at various substrate temperatures (T{sub sub}) by facing target magnetron sputtering. The influences of substrate temperature on crystal structure and morphology are discussed. The temperature dependences of magnetization, lattice parameters and resistivity for the resulting film are systematically investigated, which shows several different physical properties from those of previous work. Highlights: {yields} Variation of the substrate temperatures adjusted the preferred orientation from (1 1 1) to (2 0 0) of the Mn{sub 3}CuN{sub y} thin films. {yields} There exists a magnetic ordering transition at 225 K from paramagnetic (PM) to ferrimagnetic (FI), which is different than previous results. {yields} It shows a positive thermal expansion behavior with average linear thermal expansion coefficient 2.49 x 10{sup -5} K{sup -1}. However there was no crystal phase transition occurred around the magnetic transition in the film. {yields} The temperature dependence of resistivity displayed a semiconductor-like behavior, which is quite different from the bulk sample. {yields} We believe that our findings may provide an important role to further utilize the potential of antiperovskite manganese nitride film. -- Abstract: Deposition of Mn{sub 3}CuN{sub y} thin films on single crystal Si (1 0 0) at various substrate temperatures (T{sub sub}) by facing target magnetron sputtering is reported. The crystal structure and composition were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results confirmed that the crystalline antiperovskite Mn{sub 3}CuN{sub y} thin film with (2 0 0) highly preferred texture had been obtained at T{sub sub} = 180 {sup o}C. Furthermore, for the resulting Mn{sub 3}CuN{sub y} thin film, it showed different properties compared with the bulk counterpart. There was a paramagnetic to ferrimagnetic transition at 225 K with decreasing temperature. The change of the lattice constant with temperature presented positive thermal expansion behavior and no structural transition was observed. The average linear thermal expansion coefficient ({alpha}) is 2.49 x 10{sup -5} K{sup -1} from 123 K to 298 K. More interestingly, the temperature dependence of resistivity displayed a semiconductor-like behavior, i.e. an obvious monotonous decrease of resistivity with increasing temperature.

36 MATERIALS SCIENCE↗

Structural and pyroelectric properties of sol-gel derived multiferroic BFO thin films

Highlights: Black-Right-Pointing-Pointer We fabricated multiferroic BFO/PZT multilayer films by spin-coating method. Black-Right-Pointing-Pointer The trap centers of carriers were formed at the interfaces between BFO and PZT films. Black-Right-Pointing-Pointer The ferroelectric properties were superior to those of single composition BFO film. -- Abstract: Multiferroic BFO/PZT multilayer films were fabricated by spin-coating method on the (1 1 1)Pt/Ti/SiO{sub 2}/Si substrate alternately using PZT(30/70), PZT(70/30) and BFO alkoxide solutions. The structural and ferroelectric properties were investigated for uncooled infrared detector applications. The coating and heating procedure was repeated six times to form BFO/PZT multilayer films. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as Bi{sub 2}Fe{sub 4}O{sub 3}. The thickness of BFO/PZT multilayer film was about 200-220 nm. The ferroelectric properties such as dielectric constant, remnant polarization and pyroelectric coefficient were superior to those of single composition BFO film, and those values for BFO/PZT(70/30) multilayer film were 288, 15.7 {mu}C/cm{sup 2} and 9.1 Multiplication-Sign 10{sup -9} C/cm{sup 2} K at room temperature, respectively. Leakage current density of the BFO/PZT(30/70) multilayer film was 3.3 Multiplication-Sign 10{sup -9} A/cm{sup 2} at 150 kV/cm. The figures of merit, F{sub V} for the voltage responsivity and F{sub D} for the specific detectivity, of the BFO/PZT(70/30) multilayer film were 6.17 Multiplication-Sign 10{sup -11} Ccm/J and 6.45 Multiplication-Sign 10{sup -9} Ccm/J, respectively.

36 MATERIALS SCIENCE↗

Chemical bath deposition and characterization of electrochromic thin films of sodium vanadium bronzes

Highlights: Black-Right-Pointing-Pointer We report a new chemical bath method for the deposition of vanadium bronze thin films. Black-Right-Pointing-Pointer The films are phase mixture of NaV{sub 6}O{sub 15} and Na{sub 1.1}V{sub 3}O{sub 7.9} with 10.58% lattice water. Black-Right-Pointing-Pointer The as-deposited vanadium bronze films exhibit two-step electrochromism. Black-Right-Pointing-Pointer They change their yellow-orange color to green and then from green to blue color. Black-Right-Pointing-Pointer The method allows the preparation of films on substrates with low melting point. -- Abstract: Thin yellow-orange films of sodium vanadium oxide bronzes have been prepared from a sodium-vanadium solution (1:1) at 75 Degree-Sign C and pH = 3. The composition, structure and morphology of the films have been studied by XRD, IR spectroscopy, TG and SEM-EDX analyses. It has been established that the prepared films are a phase mixture of hydrated NaV{sub 6}O{sub 15} (predominant component) and Na{sub 1.1}V{sub 3}O{sub 7.9} with total water content of 10.58%. The sodium vanadium bronze thin films exhibit two-step electrochromism followed by color change from yellow-orange to green, and then from green to blue. The cyclic voltammetry measurements on the as-deposited and annealed vanadium bronze films reveal the existence of different oxidation/reduction vanadium sites which make these films suitable for electrochromic devices. The annealing of the films at 400 Degree-Sign C changes the composition, optical and electrochemical properties.

36 MATERIALS SCIENCE↗

Deposition of nanostructured photocatalytic zinc ferrite films using solution precursor plasma spraying

Highlights: Black-Right-Pointing-Pointer Highly economic solution precursor route capable of producing films/coating even for mass scale production. Black-Right-Pointing-Pointer Pure spinel phase ZnFe{sub 2}O{sub 4} porous, immobilized films deposited in single step. Black-Right-Pointing-Pointer Parameter optimization yields access to nanostructuring in SPPS method. Black-Right-Pointing-Pointer The ecofriendly immobilized ferrite films were active under solar radiation. Black-Right-Pointing-Pointer Such magnetic system display advantage w.r.t. recyclability after photocatalyst extraction. -- Abstract: Deposition of pure spinel phase, photocatalytic zinc ferrite films on SS-304 substrates by solution precursor plasma spraying (SPPS) has been demonstrated for the first time. Deposition parameters such as precursor solution pH, concentration, film thickness, plasma power and gun-substrate distance were found to control physico-chemical properties of the film, with respect to their crystallinity, phase purity, and morphology. Alkaline precursor conditions (7 < pH {<=} 10) were found to favor oxide film formation. The nanostructured films produced under optimized conditions, with 500 mM solution at pH {approx} 8.0, yielded pure cubic phase ZnFe{sub 2}O{sub 4} film. Very high/low precursor concentrations yielded mixed phase, less adherent, and highly inhomogeneous thin films. Desired spinel phase was achieved in as-deposited condition under appropriately controlled spray conditions and exhibited a band gap of {approx}1.9 eV. The highly porous nature of the films favored its photocatalytic performance as indicated by methylene blue de-coloration under solar radiation. These immobilized films display good potential for visible light photocatalytic applications.

36 MATERIALS SCIENCE↗

Functional chitosan-based grapefruit seed extract composite films for applications in food packaging technology

Highlights: • Chitosan-based grapefruit seed extract (GFSE) films were solution casted. • GFSE was uniformly dispersed within all chitosan film matrices. • All chitosan-based composite films showed remarkable transparency. • Increasing amounts of GFSE incorporated increased the elongation at break of films. • Chitosan-based GFSE composite films inhibited the proliferation of fungal growth. - Abstract: Chitosan-based composite films with different amounts of grapefruit seed extract (GFSE) (0.5, 1.0 and 1.5% v/v) were fabricated via solution casting technique. Experimental results showed that GFSE was uniformly dispersed within all chitosan film matrices. The presence of GFSE made the films more amorphous and tensile strength decreased, while elongation at break values increased as GFSE content increased. Results from the measurement of light transmission revealed that increasing amounts of GFSE (from 0.5 to 1.5% v/v) did not affect transparency of the films. Furthermore, packaging of bread samples with chitosan-based GFSE composite films inhibited the proliferation of fungal growth as compared to control samples. Hence, chitosan-based GFSE composite films have the potential to be a useful material in the area of food technology.

36 MATERIALS SCIENCE↗

Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the crystallites size increases, the grain boundaries reduce and this suppresses the recombination rate of electron–hole pairs on the nanostructured hematite thin films. As a result, the measured photocurrent densities of nanostructured hematite thin films also increased. The highest measured photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl in 1 M NaOH electrolyte was achieved for the nanostructured hematite thin film annealed at 600 °C. This study had confirmed that strong interdependencies exist between the average hematite nanocrystallites size and grain boundaries with annealing temperature on the eventual PEC water splitting performance of nanostructured hematite thin films. The annealed hematite thin films at a higher temperature will enhance the nanocrystals growth and thus, suppressing the electron–hole pairs recombination rate, lowering the grain boundary resistance and enabling higher photocurrent flow at the molecular level. As a result, the photocurrent density and thus, the overall PEC water splitting performance of the nanostructured hematite thin films are significantly enhanced.

36 MATERIALS SCIENCE↗

Altering properties of cerium oxide thin films by Rh doping

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

36 MATERIALS SCIENCE↗

Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.

36 MATERIALS SCIENCE↗

Investigation of microstructure, micro-mechanical and optical properties of HfTiO{sub 4} thin films prepared by magnetron co-sputtering

Highlights: • HfTiO{sub 4} thin films were deposited by magnetron co-sputtering. • As-prepared and annealed at 800 °C thin films were nanocrystalline. • Optical properties and hardness were investigated in relation to thin films structure. • Hardness was 3-times higher in the case of as-deposited thin films. • HfTiO{sub 4} thin films are suitable for use as optical coatings with protective properties. - Abstract: Titania (TiO{sub 2}) and hafnium oxide (HfO{sub 2}) thin films are in the focus of interest to the microelectronics community from a dozen years. Because of their outstanding properties like, among the others, high stability, high refractive index, high electric permittivity, they found applications in many optical and electronics domains. In this work discussion on the hardness, microstructure and optical properties of as-deposited and annealed HfTiO{sub 4} thin films has been presented. Deposited films were prepared using magnetron co-sputtering method. Performed investigations revealed that as-deposited coatings were nanocrystalline with HfTiO{sub 4} structure. Deposited films were built from crystallites of ca. 4–12 nm in size and after additional annealing an increase in crystallites size up to 16 nm was observed. Micro-mechanical properties, i.e., hardness and elastic modulus were determined using conventional load-controlled nanoindentation testing. the annealed films had 3-times lower hardness as-compared to as-deposited ones (∼9 GPa). Based on optical investigations real and imaginary components of refractive index were calculated, both for as-deposited and annealed thin films. The real refractive index component increased after annealing from 2.03 to 2.16, while extinction coefficient increased by an order from 10{sup −4} to 10{sup −3}. Structure modification was analyzed together with optical energy band-gap, Urbach energy and using Wemple–DiDomenico model.

36 MATERIALS SCIENCE↗

Fabrication of antibacterial blend film from poly (vinyl alcohol) and quaternized chitosan for packaging

Highlights: • HTCC/PVA blend films were prepared through a simple mixing method. • The blend films had greater elongation at break and good optical transmittance. • The blend films had low oxygen permeability and water vapor permeability. • The films had good activity against Escherichia coli and Staphylococcus aureus. - Abstract: Blend films from poly (vinyl alcohol) (PVA) containing N-(2-hydroxy) propyl-3-trimethyl ammonium chloride chitosan (HTCC) were prepared via a simple mixing and casting method. The films were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction measurements (XRD), scanning electron microscopy and ultraviolet-visible measurements (UV–vis). The effects of HTCC amount on mechanical properties, oxygen permeability, water vapor permeation, and antibacterial properties against Gram-negative (Escherichia coli) and Gram-positive (Staphylococcus aureus) of the films were investigated. FTIR and XRD analysis show that HTCC and PVA in the blend films interacted by hydrogen bonding. SEM and UV–vis analysis reveal the good compatibility between HTCC and PVA. Compared with pure PVA film, the blend films had greater elongation at break, lower water permeability, and higher antibacterial activity. The HTCC addition decreased the tensile strength and the light transmittance. The results suggest that HTCC/PVA blend films have a potential as packaging materials.

36 MATERIALS SCIENCE↗

Preparation and adsorption properties of nano magnetite chitosan films for heavy metal ions from aqueous solution

Highlights: • Nano magnetite–chitosan films were prepared by casting method. • The efficiency of the prepared films for removing heavy metals was investigated. • The adsorption mechanism was studied using different isotherm and kinetic models. • Films reuse and metals recovery were studied. - Abstract: Nano magnetite chitosan (NMag–CS) film was prepared and characterized with different analytical methods. X-ray diffraction (XRD) patterns confirmed the formation of a pure magnetite structure and NMag–CS nanocomposite. TEM image of the film, revealed the uniform dispersion of magnetite nanoparticles inside chitosan matrix. The adsorption properties of the prepared film for copper, lead, cadmium, chromium and nickel metal ions were evaluated. Different factors affecting the uptake behavior by the composite films such as time, initial pH and film dose were investigated. The adsorption equilibrium attained using 2 g/L of the film after 120 min of reaction. The equilibrium data were analyzed using Langmuir and Freundlich models. The adsorption kinetics followed the mechanism of the pseudo-second-order equation for all metals. The metals regenerated from films with an efficiency greater than 95% using 0.1 M ethylene diamine tetra acetic acid (EDTA) and films were successfully reused for adsorption.

36 MATERIALS SCIENCE↗

Annealing induced microstructure engineering of antimony tri-selenide thin films

Highlights: • Deposition of Sb{sub 2}Se{sub 3} thin films using thermal vapour deposition. • Films are deposited on substrates with concurrent heating and without heating. • Effect of post deposition annealing on the two types of films are investigated. • Influence of temperature and processing conditions on optical band gap are probed. • This Sb{sub 2}Se{sub 3} films can find application in solar cells and optoelectronic devices. - Abstract: The presented work demonstrates the effect of annealing on the structural, surface morphology and optical properties of Antimony Triselenide (Sb{sub 2}Se{sub 3}) thin films deposited by thermal evaporation. Two sets of thin films of Sb{sub 2}Se{sub 3} were grown on soda lime glass (SLG) substrates by thermal evaporation with and without substrate heating. Both sets of films were then annealed at three distinct temperatures (100 °C, 200 °C and 300 °C) to study the effects of annealing on the microstructure. Analysis using XRD (X-Ray Diffraction) characterization revealed that the as-deposited films without substrate heating exhibit an amorphous nature, whereas the films grown with concurrent substrate heating are polycrystalline with orthorhombic structure. The films annealed at high temperature with concurrent substrate heating possess smooth and continuous grain morphologies. The effect of annealing was also found to have significant impact on the band gap and optical properties of the Sb{sub 2}Se{sub 3} thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Growth and characterization of Cu3SbSe4 thin films through thermally diffusing Sb2Se3 – CuSe by chemical bath deposition (CBD)

Highlights: • Cu{sub 3}SbSe{sub 4} films were formed by chemical bath deposition followed by a heat treatment. • Prepared Cu{sub 3}SbSe{sub 4} thin films have promising properties to absorbing layer in a solar cell or thermoelectric material. • Electrical conductivity values of Cu{sub 3}SbSe{sub 4} are high, considering its manufacturing method and the previous reports in the field. - Abstract: In the present work, Cu{sub 3}SbSe{sub 4} thin films have been successfully synthesized by chemical bath deposition (CBD) involving a sequential deposition of antimony selenide (Sb{sub 2}Se{sub 3}) and copper selenide (CuSe) films and then annealing in a vacuum atmosphere. The influence of CuSe deposition time on the previously deposited Sb{sub 2}Se{sub 3} films was investigated to obtain the ternary phase. A study of the structural, morphological, optical and electrical properties of these films was carried out using appropriate characterization techniques. X-ray diffraction analysis revealed that the films show a tetragonal crystalline crystalline structure corresponding to the Permingeatite phase (Cu{sub 3}SbSe{sub 4}). The crystal size increases with the CuSe deposition time. It is identified by Raman spectroscopy that at low CuSe deposition times a low concentration of Sb{sub 2}Se{sub 3} coexists in the thin film. The optical band gap energy of these films was evaluated in the range of 0.67–1.18 eV, decreasing by increasing CuSe deposition time. By field-emission scanning electron microscopy (FESEM) a morphological study was carried out, observing that by increasing the deposition time of CuSe there is an increase of agglomerates and decrease the porosity in the samples. An elemental analysis was carried out by energy dispersive X-ray spectroscopy to observe the composition and elemental distribution in the ternary compound. The films showed a p-type electrical conductivity with values between 0.417 and 55.55 (Ω cm{sup −1}). The mobility and carrier density were performed by Hall Effect and Thermoelectric measurements observing a slight increase in the values by increasing the time of CuSe deposition. All results obtained for thin films of Cu{sub 3}SbSe{sub 4} suggest that it could be used as an absorber material in a solar cell or thermoelectric material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Epitaxial Thin Films of a Chalcogenide Perovskite

Chalcogenide perovskites have emerged as a new class of optoelectronic materials, especially for photovoltaic applications, but fundamental properties and applications of chalcogenide perovskites remain limited due to the lack of high-quality thin films. In this paper, we report direct epitaxial thin film growth of BaZrS 3 , a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out-of-plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface, the films are polycrystalline with many extended defects, suggesting the potential for further improvement in growth. X-ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region, validating BaZrS 3 as a suitable candidate for ultrathin front absorbers in tandem solar cells. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS 3 films thus far. Our study opens up opportunities to use high quality thin films of chalcogenide perovskites to probe fundamental physical phenomena in thin films and heterostructures and also in photovoltaic and optoelectronic applications.

36 MATERIALS SCIENCE↗

Tunable Semiconducting Behavior and Linear-Nonlinear Optical Properties of Ag–Sn Dual-Doped Nanocrystalline CdO Thin Films for Optoelectronics

Semiconductor-based thin films have a great impact on determining the anticipated optoelectronic device construction and the advancement of cutting-edge applications. Herein, Ag and Sn dual-doped nanocrystalline transparent conducting CdO thin films were prepared on glass substrates using a cost-effective spray coating method, and their structural, morphological, optical, and semiconducting behaviors were investigated. The successful incorporation of Ag and Sn resulted in the polycrystalline nature of the deposited films without the additional peaks, as verified by X-ray diffraction (XRD) analysis. The XRD report also revealed the enhanced crystallinity (65%) at the higher doping level (3 wt % Ag and Sn-doped CdO film). All the deposited CdO films exhibited homogeneous, spherical, or round-shaped grains, with agglomeration revealed by scanning electron microscopy analysis. UV–visible spectroscopy was utilized to determine the linear and nonlinear optical properties of the deposited CdO thin films, and a reduction in the band gap from 3.891 to 3.772 eV was observed. A significant enhancement in the first- and third-order nonlinear susceptibility and nonlinear refractive index of the doped CdO films was also observed with increasing doping concentration. Hall effect data were collected at room temperature to investigate the electrical properties of all of the CdO films. The charge carrier concentration of CdO thin films was increased from 142.08 × 10 18 to 169.10 × 10 18 cm –3 , and the highest conductivity was found to be 192 s/cm on doping 3 wt % Ag–Sn. All the CdO thin films exhibited n-type conductivity, while an incredible n-type to p-type charge carrier transition was noticed at a higher doping level (3 wt % Ag–Sn). The findings of the current work are expected to advance the synthesis of semiconductor thin films through cost-effective spray coating methods for optoelectronic device applications.

deposition↗

Room temperature ferroelectric and magnetic investigations and detailed phase analysis of Aurivillius phase Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Co{sub 0.3}O{sub 15} thin films

Aurivillius phase Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Co{sub 0.3}O{sub 15} (BTF7C3O) thin films on {alpha}-quartz substrates were fabricated by a chemical solution deposition method and the room temperature ferroelectric and magnetic properties of this candidate multiferroic were compared with those of thin films of Mn{sup 3+} substituted, Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Mn{sub 0.3}O{sub 15} (BTF7M3O). Vertical and lateral piezoresponse force microscopy (PFM) measurements of the films conclusively demonstrate that BTF7C3O and BTF7M3O thin films are piezoelectric and ferroelectric at room temperature, with the major polarization vector in the lateral plane of the films. No net magnetization was observed for the in-plane superconducting quantum interference device (SQUID) magnetometry measurements of BTF7M3O thin films. In contrast, SQUID measurements of the BTF7C3O films clearly demonstrated ferromagnetic behavior, with a remanent magnetization, B{sub r}, of 6.37 emu/cm{sup 3} (or 804 memu/g), remanent moment = 4.99 Multiplication-Sign 10{sup -5} emu. The BTF7C3O films were scrutinized by x-ray diffraction, high resolution transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis mapping to assess the prospect of the observed multiferroic properties being intrinsic to the main phase. The results of extensive micro-structural phase analysis demonstrated that the BTF7C3O films comprised of a 3.95% Fe/Co-rich spinel phase, likely CoFe{sub 2-x}Ti{sub x}O{sub 4}, which would account for the observed magnetic moment in the films. Additionally, x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM) imaging confirmed that the majority of magnetic response arises from the Fe sites of Fe/Co-rich spinel phase inclusions. While the magnetic contribution from the main phase could not be determined by the XMCD-PEEM images, these data however imply that the Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Co{sub 0.3}O{sub 15} thin films are likely not single phase multiferroics at room temperature. The PFM results presented demonstrate that the naturally 2D nanostructured Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Co{sub 0.3}O{sub 15} phase is a novel ferroelectric and has potential commercial applications in high temperature piezoelectric and ferroelectric memory technologies. The implications for the conclusive demonstration of ferroelectric and ferromagnetic properties in single-phase materials of this type are discussed.

36 MATERIALS SCIENCE↗

Controlled deposition of sulphur-containing semiconductor and dielectric nano-structured films on metals in SF{sub 6} ion-ion plasma

In the present paper, the deposition processes and formation of films in SF{sub 6} ion-ion plasma, with positive and negative ion flows accelerated to the surface, are investigated. The PEGASES (acronym for Plasma Propulsion with Electronegative GASES) source is used as an ion-ion plasma source capable of generating almost ideal ion-ion plasma with negative ion to electron density ratio more than 2500. It is shown that film deposition in SF{sub 6} ion-ion plasma is very sensitive to the polarity of the incoming ions. The effect is observed for Cu, W, and Pt materials. The films formed on Cu electrodes during negative and positive ion assisted deposition were analyzed. Scanning electron microscope analysis has shown that both positive and negative ion fluxes influence the copper surface and leads to film formation, but with different structures of the surface: the low-energy positive ion bombardment causes the formation of a nano-pored film transparent for ions, while the negative ion bombardment leads to a continuous smooth insulating film. The transversal size of the pores in the porous film varies in the range 50–500 nm, and further analysis of the film has shown that the film forms a diode together with the substrate preventing positive charge drain, and positive ions are neutralized by passing through the nano-pores. The film obtained with the negative ion bombardment has an insulating surface, but probably with a multi-layer structure: destroying the top surface layer allows to measure similar “diode” IV-characteristics as for the nano-pored film case. Basing on results, practical conclusions for the probes and electrodes cleaning in ion-ion SF{sub 6} plasmas have been made. Different applications are proposed for the discovered features of the controlled deposition from ion-ion plasmas, from Li-sulphur rechargeable batteries manufacturing and nanofluidics issues to the applications for microelectronics, including low-k materials formation.

36 MATERIALS SCIENCE↗