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At least 1,117 records · Page 62

Simulating Large PEPs Tensor Networks on Small Quantum Devices

We systematically map low bond dimension PEPs tensor networks to quantum circuits. By measuring and reusing qubits, we are in principle able to simulate an N×M square lattice PEPs network (for arbitrary M) of bond dimension 2 using N+ 2 qubits. We then seek to determine if this mapping can yield useful values for long-range loop observables in the presence of quantum device noise in the topological Wen plaquette model by mapping a 3×3 PEPs tensor network to a 5-qubit quantum circuit and executing it on the Honeywell System Model H1-1 trapped-ion device. We find that, for this system size, the noisy observable values are indeed sufficient for diagnosing topological vs. trivial order as the Wen model is perturbed by a magnetic field term in the Hamiltonian. We provide an overview of the experimental procedure and its results. We then explain in greater detail our method for mapping 2D tensor networks to quantum circuits and its scaling properties. This serves as a proof-of-concept of the utilty of the measure-and-reuse approach for simulating large 2D quantum systems on small quantum devices.

MacCormack, Ian↗

Modeling Vapor Transport Deposition of Metal-halide Perovskite Thin Films for Photovoltaic and Optoelectronic Devices

Over the past decade, metal halide perovskites (MHPs) have emerged as a promising materials platform for high-efficiency solar cells and low-cost optoelectronics. However, there are challenges that frustrate the large-scale manufacturing of MHP devices, including difficulty in controlling film composition, interface formation and their device instability under ambient conditions. Vapor processing offers an attractive path to manufacturability, while also opening the door to new opportunities in device design that could favorably impact ultrahigh efficiency tandem solar cells or overall stability. Emphasis here is on the use of an alternate processing methodology, vapor transport deposition (VTD), to deposit the MHP layer. In experimental work, we found that our deposition system had significant run-to-run variations in film thickness and composition. To understand and resolve these issues, we use COMSOL Multiphysics software to model the precursor deposition rate numerically, trying to guide the broad range of parameters in the system. The result can be matched with experimental data and provides insight into system hydrodynamics and molar transport effects. Finally, we show that chamber pressure is a key factor to scale up the VTD technique.

Hsu, Wan-Ju↗

Investigating the Role of Copper in Arsenic Doped CdSeTe Photovoltaic Devices

As part of NREL's development of arsenic doped CdSeTe devices, co-doping with copper has become a common practice and, despite little difference in carrier concentration (often ~1016 cm-3), co-doped devices regularly show improved Voc. Given the critical importance of improving Voc, we are investigating this trend with a wide variety of characterization techniques including SEM, EBSD, SIMS, PL, CL, XPS, TRPL, JVT, KPFM, and DLTS. Together these indicate that Cu facilitates improved absorber-buffer interface properties and potentially improved bulk absorber characteristics, though specific mechanisms have not yet been determined. Despite the improved performance of co-doped devices, Voc is still far below its potential, and we explore the possibility that this limitation is the result of low buffer doping in conjunction with high absorber doping.

arsenic doping↗

Efficient black silicon photovoltaic devices with enhanced blue response

A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.

Oh, Jihun↗

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗

Energy storage devices having coated passive components

The present invention provides various passive electronic components comprising a layer of coated particles, and methods for producing and using the same. Some of the passive electronic components of the invention include, but are not limited to conductors, resistors, current collectors, capacitors, piezoelectronic devices, inductors and transformers. The present invention also provides energy storage devices and electrode layers for such energy storage devices having passive, electrically-conductive particles coated with one or more thin film materials.

King, David M.↗

Hybrid organic light emitting device

An OLED device comprises an anode and a cathode, and at least one graded emissive layer disposed between the anode and the cathode, the graded emissive layer comprising first and second materials, wherein a concentration of the first material increases continuously from an anode side of the graded emissive layer to a cathode side of the graded emissive layer, and a concentration of the second material decreases continuously from the anode side of the graded emissive layer to the cathode side of the graded emissive layer. An OLED device comprising a graded emissive layer and a hybrid white OLED device are also described.

Forrest, Stephen R.↗

Aquatic organism tracking devices, systems and associated methods

Aquatic organism tracking devices, systems and associated methods are described. According to one aspect, an aquatic organism tracking device includes a housing, a transducer coupled with the housing and configured to transmit a data transmission externally of the housing and an aquatic organism associated with the tracking device, a programmable oscillator coupled with the housing, and wherein the programmable oscillator is configured to generate a clock signal having a selected one of a plurality of different frequencies, processing circuitry coupled with the housing and configured to receive the clock signal from the programmable oscillator and to execute a plurality of executable instructions according to the clock signal, a power source coupled with the housing and configured to store electrical energy, and wherein the processing circuitry is configured to control the provision of the electrical energy from the power source to the transducer to generate the data transmission as a result of the execution of the instructions.

Deng, Z. Daniel↗

Explosive device comprising an explosive material having controlled explosive properties

An explosive device is described herein, wherein the explosive device includes a substrate that has a surface, wherein surface energy of a portion of the surface of the substrate has been modified in a vacuum chamber from a first surface energy to a second surface energy. The explosive device additionally includes explosive material that has been deposited on the surface of the substrate in the vacuum chamber by way of physical vapor deposition (PVD), wherein the explosive material is deposited on the portion of the surface of the substrate subsequent to the surface energy of the portion of the surface of the substrate being modified from the first surface energy to the second surface energy.

Forrest, Eric Christopher↗

Sub-electrode microlens array for organic light emitting devices

Substrates are disclosed that include an embedded or partially-embedded microlens array. Devices are disclosed that include an OLED disposed over a substrate having an embedded or partially embedded micro lens array. Devices as disclosed herein redirect up to 100% of the light that otherwise would be confined in organic and electrode layers toward the substrate and thus provide improved light extraction and device efficiency.

Forrest, Stephen R.↗

Microscale gas breakdown device and process

A microscale gas breakdown device includes a first surface and a second surface. The first surface and the second surface define a gap distance. The device includes a perturbation on the first surface or the second surface. The perturbation is defined by a height value and a radius value. The device includes a current source or a voltage source configured to apply a current or a voltage across the first surface and the second surface. In response to the current or the voltage being applied, a resulting discharge travels along a first discharge path in response to being exposed to a high pressure and a second discharge path in response to being exposed to a low pressure.

Fu, Yangyang↗

Bias control for a memory device

Methods, systems, and devices for bias control for a memory device are described. A memory system may store indication of whether data is coherent. In some examples, the indication may be stored as metadata, where a first value indicates that the data is not coherent and a second value or a third value indicate that the data is coherent. When a processing unit or other component of the memory system processes a command to access data, the memory system may operate according to a device bias mode when the indication is the first value, and according to a host bias mode when the indication is the second value or the third value.

97 MATHEMATICS AND COMPUTING↗

Device and methods for determination of molecular weight distributions of polymers and distributions of other polymer properties without physical separation

Devices and methods for determining the cumulative distribution of a polymer property in a reactor without physical separation of reaction subcomponents. The device includes a means of measuring an instantaneous property of the polymers being produced in a reaction vessel a plurality of times during a polymerization reaction as well as a means of determining the corresponding change in polymer concentration in the reaction vessel between measurements of the instantaneous polymer property The device also includes a means of computing a statistical distribution appropriate to the polymer characteristic and applying the statistical distribution to a recently measured instantaneous value of the polymer property so as to have an instantaneous distribution of the polymer property and a means of adding together the instantaneous distributions of the polymer property in order to obtain the cumulative distribution of the polymer property in the reactor.

Reed, Wayne Frederick↗

Predicting failure parameters of semiconductor devices subjected to stress conditions

A method for predicting failure parameters of semiconductor devices can include receiving a set of data that includes (i) characteristics of a sample semiconductor device, and (ii) parameters characterizing a stress condition. The method further includes extracting a plurality of feature values from the set of data and inputting the plurality of feature values into a trained model executing on the one or more processors, wherein the trained model is configured according to an artificial intelligence (AI) algorithm based on a previous plurality of feature values, and wherein the trained model is operable to output a failure prediction based on the plurality of feature values. Further, the method includes generating, via the trained model, a predicted failure parameter of the sample semiconductor device due to the stress condition.

Ahmed, Moinuddin↗

Ecosystem device for determining plant-microbe interactions

This disclosure provides systems, methods, and devices related to the study of ecological processes. In one aspect, a device includes a base, a substrate, and an enclosure. The substrate is in contact with a first surface of the base. The substrate and the base define a root chamber. The enclosure is in contact with a second surface of the base. The base and the enclosure define a growth chamber. The base defines a stem port connecting the root chamber and the growth chamber. The base further defines a first port in fluid communication with the root chamber and a second port in fluid communication with the root chamber. The device is operable to contain a plant, roots of the plant being in the root chamber, a stem of the plant passing through the stem port, and leaves of the plant being in the growth chamber.

Andeer, Peter↗

Thermal energy storage devices, systems, and methods

Methods, systems, and device for thermal energy storage are provided. For example, some embodiments include a thermal energy storage device that may include: a first casing wall; a second casing wall; and/or multiple support structures located between the first casing wall and the second casing wall. The multiple support structures may provide continuous thermal paths and/or continuous mechanical paths between the first casing wall and the second casing wall. The thermal energy storage device may be fabricated utilizing an additive manufacturing technique, such as direct laser metal sintering. Some embodiments may be manufactured utilizing printed metals, such as an aluminum alloy. In some embodiments, a phase-change material is charged between the first casing wall and the second casing wall. The phase-change material may include paraffin.

Isaacs, Steven↗

Partial discharge suppression in high voltage solid-state devices

Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Sampayan, Stephen↗

Health monitoring device

Example aspects of a volatile organic compound detection device, a wearable health monitoring device, and a method of monitoring a user's health are disclosed. The volatile organic compound detection device can comprise a collector comprising a collector material configured to collect volatile organic compounds given off from a user's skin; a separator comprising a gas chromatography column configured to separate mixtures of the volatile organic compounds into their constituent chemicals; and an identifier comprising a detector and a processor, the detector configured to transduce the constituent chemicals into a signal, the processor configured to process the signal to identify specific volatile organic compounds indicative of a health condition.

42 ENGINEERING↗