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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Study of microstructure and semiconductor to metallic conductivity transition in solid state sintered Li{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4−δ} spinel ferrite

Li{sub 0.5}Mn{sub 0.5}Fe{sub 2}O{sub 4} ferrite has been prepared by solid state sintering route. XRD pattern showed single phased cubic spinel structure. The samples exhibited typical character of plastoferrite with ring shaped surface microstructure. New feature observed in the present ferrite is the frequency activated conductivity transition from semiconductor to metallic state above 800 K. The increase of conductivity with frequency in the semiconducting regime follows Jonscher power law, while decrease of conductivity in metallic regime obeys Drude equation. The conductivity in semiconductor regime has been understood by hopping mechanism of localized charge carriers among the cations in B sites of cubic spinel structure. At higher temperatures, overlapping of electronic orbitals from neighbouring ions and free particle like motion of lighter Li{sup +} ions among interstitial lattices contributed metallic conductivity. The samples provided evidence of localized nature of the charge carriers at lower temperatures and increasing delocalized character with the increase of measurement temperature. From application point of view, such ferrites behave as semiconductor at low temperature and allow electromagnetic wave to pass through, but transform into a metallic reflector with negative dielectric constant at high temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Real-time crystallization in fluorinated parylene probed by conductivity spectra

Dielectric relaxation spectroscopy experiments were performed at high temperature on fluorinated parylene films during the occurrence of the isothermal crystalline phase transition. For this polymer, since the difference between the glass transition temperature (T{sub g}) and the phase transition temperature (T{sub c}) is very strong (T{sub c} ≥ 4T{sub g}), segmental and dipolar relaxation usually used to probe the crystallization are not shown in the experiment frequency window (10{sup −1} to 10{sup 6} Hz) during the crystallization. The charge diffusion becomes the only electrical marker that allows probing the phase transition. During the transition phase, a continuous decrease of about two orders of magnitude is observed in the conductivity values below an offset frequency (f{sub c}) with a tendency to stabilization after 600 min. Below the offset frequency, the decrease of the normalized conductivity to the initial value as function of time is frequency independent. The same behavior is also observed for the f{sub c} values that decrease from 160 Hz to about 20 Hz. Above the offset frequency, the electronic hopping mechanism is also affected by the phase transition and the power law exponent (n) of the AC conductivity shows a variation from 0.7 to 0.95 during the first 600 min that tend to stabilize thereafter. Accordingly, three parameters (n, f{sub c}, and AC conductivity values for frequencies below f{sub c}) extracted from the AC conductivity spectra in different frequency windows seem suitable to probe the crystalline phase transition.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Synthesis of rock-salt type lithium borohydride and its peculiar Li{sup +} ion conduction properties

The high energy density and excellent cycle performance of lithium ion batteries makes them superior to all other secondary batteries and explains why they are widely used in portable devices. However, because organic liquid electrolytes have a higher operating voltage than aqueous solution, they are used in lithium ion batteries. This comes with the risk of fire due to their flammability. Solid electrolytes are being investigated to find an alternative to organic liquid. However, the nature of the solid-solid point contact at the interface between the electrolyte and electrode or between the electrolyte grains is such that high power density has proven difficult to attain. We develop a new method for the fabrication of a solid electrolyte using LiBH{sub 4,} known for its super Li{sup +} ion conduction without any grain boundary contribution. The modifications to the conduction pathway achieved by stabilizing the high pressure form of this material provided a new structure with some LiBH{sub 4}, more suitable to the high rate condition. We synthesized the H.P. form of LiBH{sub 4} under ambient pressure by doping LiBH{sub 4} with the KI lattice by sintering. The formation of a KI - LiBH{sub 4} solid solution was confirmed both macroscopically and microscopically. The obtained sample was shown to be a pure Li{sup +} conductor despite its small Li{sup +} content. This conduction mechanism, where the light doping cation played a major role in ion conduction, was termed the “Parasitic Conduction Mechanism.” This mechanism made it possible to synthesize a new ion conductor and is expected to have enormous potential in the search for new battery materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

An improved thin film approximation to accurately determine the optical conductivity of graphene from infrared transmittance

This work presents an improved thin film approximation to extract the optical conductivity from infrared transmittance in a simple yet accurate way. This approximation takes into account the incoherent reflections from the backside of the substrate. These reflections are shown to have a significant effect on the extracted optical conductivity and hence on derived parameters as carrier mobility and density. By excluding the backside reflections, the error for these parameters for typical chemical vapor deposited (CVD) graphene on a silicon substrate can be as high as 17% and 45% for the carrier mobility and density, respectively. For the mid- and near-infrared, the approximation can be simplified such that the real part of the optical conductivity is extracted without the need for a parameterization of the optical conductivity. This direct extraction is shown for Fourier transform infrared (FTIR) transmittance measurements of CVD graphene on silicon in the photon energy range of 370–7000 cm{sup −1}. From the real part of the optical conductivity, the carrier density, mobility, and number of graphene layers are determined but also residue, originating from the graphene transfer, is detected. FTIR transmittance analyzed with the improved thin film approximation is shown to be a non-invasive, easy, and accurate measurement and analysis method for assessing the quality of graphene and can be used for other 2-D materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Zero-conductance resonances and spin polarizations in three-terminal rings in the presence of spin-orbit coupling

Spin dependent transport in one-dimensional (1D) three-terminal rings is investigated in the presence of the Rashba spin-orbit coupling (RSOC). We focus on zero-conductance resonances and spin polarizations. For these purposes, the transmission functions are derived analytically. The total conductances are analyzed in the complex energy plane with a focus on the zero-pole structure characteristic of transmission (anti)resonances. The spin polarizations in symmetrically and asymmetrically coupled three-terminal rings are studied as a function of the incident electron energy. It is found that in the absence of the RSOC there are three kinds of conductance zeros. In the presence of the RSOC, the zeros of the first and the third kinds are lifted, while some of the second kind persist. The lifting of the conductance zeros is related to the breaking of the spin-reversal symmetry, and the lifted conductance zeros evolve into spin polarization zeros.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of epoxidation level on thermal properties and ionic conductivity of epoxidized natural rubber solid polymer nanocomposite electrolytes

Effect of epoxide content on the thermal and conductivity properties of epoxidized natural rubber (ENR) solid polymer nanocomposite electrolytes was investigated. Commercial available epoxidized natural rubber having 25 (ENR25) and 50 mole% (ENR50) epoxide, respectively were incorporated with lithium perchlorate (LiClO{sub 4}) salt and titanium dioxide (TiO{sub 2}) nanofiller via solution casting method. The solid polymer nanocomposite electrolytes were characterized by differential scanning calorimetry (DSC) and impedance spectroscopy (IS) for their thermal properties and conductivity, respectively. It was evident that introduction of LiClO{sub 4} causes a greater increase in glass transition temperature (T{sub g}) and ionic conductivity of ENR50 as compared to ENR25. Upon addition of TiO{sub 2} in ENR/LiClO{sub 4} system, a remarkable T{sub g} elevation was observed for both ENRs where ENR50 reveals a more pronounced changes. It is interesting to note that they exhibit different phenomenon in ionic conductivity with TiO{sub 2} loading where ENR25 shows enhancement of conductivity while ENR50 shows declination.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Polaronic conduction and Anderson localization in reduced strontium barium niobate

Electron transport mechanisms in reduced Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN50) are investigated from ~100 to 955 K through an analysis of the electrical conductivity (σ) and the Seebeck coefficient (S) with respect to temperature (T). Notably, experimental evidence is presented that supports a scenario of Anderson localization below 600 K and carrier excitation across a mobility edge at higher temperature. As a relaxor ferroelectric, stoichiometric SBN has intrinsic disorder associated with both the distribution of Sr/Ba vacancies and the formation of polarized nanoregions. The removal of oxygen through reduction generates conduction electrons in SBN. At the lowest temperatures measured (100–155 K), the electrical conductivity exhibits a temperature dependence characteristic of variable range hopping, followed by a transition to small polaron hopping at intermediate temperatures (250–545 K). In both the variable range and small polaron hopping regimes, a semiconductor-like temperature dependence of the electrical conductivity ( dσ/dT > 0) was observed. However, above 615 K, dσ/dT decreases dramatically and eventually becomes metal-like ( dσ/dT < 0). Concomitantly, the Seebeck coefficient exhibits a linear dependence on lnT from 615 to 955 K with the same slope (~104 μ V/K) for both polycrystalline SBN50 and single crystalline SBN61 (both reduced), indicating a similar, constant density of states near the Fermi level for both compositions. Here, the application of Seebeck coefficient theory to this inherently disordered material reveals that the excitation of carriers across a mobility edge is likely responsible for the change in dσ/dT at high temperature. Such findings may have a significant impact in the field of conductive ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Evaluating conducting network based transparent electrodes from geometrical considerations

Conducting nanowire networks have been developed as viable alternative to existing indium tin oxide based transparent electrode (TE). The nature of electrical conduction and process optimization for electrodes have gained much from the theoretical models based on percolation transport using Monte Carlo approach and applying Kirchhoff's law on individual junctions and loops. While most of the literature work pertaining to theoretical analysis is focussed on networks obtained from conducting rods (mostly considering only junction resistance), hardly any attention has been paid to those made using template based methods, wherein the structure of network is neither similar to network obtained from conducting rods nor similar to well periodic geometry. Here, we have attempted an analytical treatment based on geometrical arguments and applied image analysis on practical networks to gain deeper insight into conducting networked structure particularly in relation to sheet resistance and transmittance. Many literature examples reporting networks with straight or curvilinear wires with distributions in wire width and length have been analysed by treating the networks as two dimensional graphs and evaluating the sheet resistance based on wire density and wire width. The sheet resistance values from our analysis compare well with the experimental values. Our analysis on various examples has revealed that low sheet resistance is achieved with high wire density and compactness with straight rather than curvilinear wires and with narrower wire width distribution. Similarly, higher transmittance for given sheet resistance is possible with narrower wire width but of higher thickness, minimal curvilinearity, and maximum connectivity. For the purpose of evaluating active fraction of the network, the algorithm was made to distinguish and quantify current carrying backbone regions as against regions containing only dangling or isolated wires. The treatment can be helpful in predicting the properties of a network simply from image analysis and will be helpful in improvisation and comparison of various TEs and better understanding of electrical percolation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Biochemical synthesis of water soluble conducting polymers

An efficient biomimetic route for the synthesis of conducting polymers/copolymers complexed with lignin sulfonate and sodium (polystyrenesulfonate) (SPS) will be presented. This polyelectrolyte assisted PEG-hematin or horseradish peroxidase catalyzed polymerization of pyrrole (PYR), 3,4 ethyldioxithiophene (EDOT) and aniline has provided a route to synthesize water-soluble conducting polymers/copolymers under acidic conditions. The UV-vis, FTIR, conductivity and cyclic voltammetry studies for the polymers/copolymer complex indicated the presence of a thermally stable and electroactive polymers. Moreover, the use of water-soluble templates, used as well as dopants, provided a unique combination of properties such as high electronic conductivity, and processability. These polymers/copolymers are nowadays tested/evaluated for antirust features on airplanes and helicopters. However, other electronic applications, such as photovoltaics, for transparent conductive polyaniline, actuators, for polypyrrole, and antistatic films, for polyEDOT, will be proposed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Dielectric relaxation and hopping conduction in reduced graphite oxide

Graphite oxide reduced by sodium borohydride was characterised and its electrical conduction investigated with impedance spectroscopy. Thermal dependence of electrical modulus (instead of permittivity, its inverse) was calculated from complex impedance spectra, an approach that prevents any peak in dielectric loss (imaginary component) from being swarmed by large dc conductivity. Two loss peaks appeared at each tested frequency, in a sample of either degree of reduction. The set of weaker peak should arise from the relaxation of some polar bonds, as proposed earlier by us. The stronger loss peaks may correspond to the hopping of conduction electrons; variable range hopping is also consistent with the observed thermal dependence of conductivity. However, nearer ambient temperature there is a change in mechanism, to band transport, with an activation energy of fairly similar values as derived from both loss peaks and conductivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Organic-inorganic proximity effect in the magneto-conductance of vertical organic field effect transistors

Vertical organic field effect transistors having a patterned source electrode and an a-SiO{sub 2} insulation layer show high performance as a switching element with high transfer characteristics. By measuring the low field magneto-conductance under ambient conditions at room temperature, we show here that the proximity of the inorganic a-SiO{sub 2} insulation to the organic conducting channel affects considerably the magnetic response. We propose that in n-type devices, electrons in the organic conducting channel and spin bearing charged defects in the inorganic a-SiO{sub 2} insulation layer (e.g., O{sub 2} = Si{sup +·}) form oppositely charged spin pairs whose singlet-triplet spin configurations are mixed through the relatively strong hyperfine field of {sup 29}Si. By increasing the contact area between the insulation layer and the conducting channel, the ∼2% magneto-conductance response may be considerably enhanced.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Strain effects on the optical conductivity of gapped graphene in the presence of Holstein phonons beyond the Dirac cone approximation

In this paper we study the optical conductivity and density of states (DOS) of doped gapped graphene beyond the Dirac cone approximation in the presence of electron-phonon (e-ph) interaction under strain, i.e., within the framework of a full π-band Holstein model, by using the Kubo linear response formalism that is established upon the retarded self-energy. A new peak in the optical conductivity for a large enough e-ph interaction strength is found which is associated to transitions between the midgap states and the Van Hove singularities of the main π-band. Optical conductivity decreases with strain and at large strains, the system has a zero optical conductivity at low energies due to optically inter-band excitations through the limit of zero doping. As a result, the Drude weight changes with e-ph interaction, temperature and strain. Consequently, DOS and optical conductivity remains stable with temperature at low e-ph coupling strengths.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Direct imaging of sketched conductive nanostructures at the LaAlO 3 /SrTiO 3 interface

Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO 3 /SrTiO 3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the conductance is crucial for such devices, it is challenging to directly visualize the local electrical properties at the buried interface. Here, we demonstrate conductivity imaging of sketched nanostructures at the LAO/STO interface by microwave impedance microscopy (MIM) with a lateral resolution on the order of 100 nm. The sheet conductance extracted from the MIM data agrees with the transport measurement. The tip-induced insulator-to-metal transition is observed above a threshold voltage of +4 V. Our work paves the way for studying emergent phenomena at oxide interfaces by probing nanoscale conductance distribution.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The influence of point defects on the thermal conductivity of AlN crystals

Here, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations is analyzed using the 3ω method in the temperature range of 30–325K. AlN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268W/m K and 339W/m K. AlN crystals grown by hydride vapor phase epitaxy yield values between 298W/m K and 341W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of AlN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100K. Lastly, phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AlN within the investigated temperature range.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Optimization of electrical treatment strategy for surface roughness reduction in conducting thin films

The surface roughness of deposited conducting thin films is responsible for various materials reliability problems in nanoelectronics and nanofabrication technologies. In this work, we report a modeling and simulation study that aims at optimizing the electrical surface treatment of deposited conducting thin films as a physical processing strategy for their surface roughness reduction. Our research is based on a continuum model of film surface morphological evolution that accounts for the residual stress in the deposited conducting thin film, the film’s wetting of the substrate layer that it is deposited on, film texture and surface diffusional anisotropy, and surface electromigration. Through systematic linear stability analysis and dynamical simulation protocols, we examine in detail the effects of film surface crystallographic orientation and applied electric field direction toward minimizing the electric field strength required for film surface smoothening. We believe that the critical electric field strength requirement for surface roughness reduction on {110}, {100}, and {111} surfaces of face-centered cubic crystalline conducting thin films exhibits a very strong dependence on the applied electric field direction, expressed as the electric field misalignment with respect to the principal residual stress directions in the film and the fast surface diffusion directions. Due to these findings, we optimize the electrical treatment strategy for surface roughness reduction of conducting thin films with respect to all relevant processing and material parameters.

42 ENGINEERING↗
DOE OSTI2019

Thermal conductivity of MoS 2 monolayers from molecular dynamics simulations

Quantification of lattice thermal conductivity of two-dimensional semiconductors like MoS 2 is necessary for the design of electronic and thermoelectric devices, but direct experimental measurements on free-standing samples is challenging. Molecular dynamics simulations, with appropriate corrections, can provide a reference value for thermal conductivity for these material systems. Here, we construct a new empirical forcefield of the Stillinger-Weber form, parameterized to phonon dispersion relations, lattice constants and elastic moduli and we use it to compute a material-intrinsic thermal conductivity of 38.1 W/m-K at room temperature and estimate a maximum thermal conductivity of 85.4 W/m-K at T = 200 K. We also identify that phonon scattering by the large isotopic mass distribution of Mo and S contributes a significant correction (>45%) to the thermal conductivity at low temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework

Passivation, conductivity, and selectivity are often acknowledged as the three requirements for optimal contacts to photovoltaic solar cells. Although there are generally accepted definitions and metrics for passivation and conductivity, a common understanding of the concept of selectivity is emerging only now. In this contribution, we present a generalized model of solar cell contacts based on the distinct lumped resistances encountered by electrons and holes traversing a contact, which we refer to as partial specific contact resistances. The relations between electron and hole partial current densities, quasi-Fermi level separation, and external voltage are derived from these partial specific contact resistances, leading to simple metrics for the aforementioned contact properties: the sum of the electron and hole resistances is a metric for passivation, their ratio is a metric for selectivity, and the majority-carrier resistance is a metric for conductivity. Using PC1D, we validate our model by simulating 10 500 cases of homojunction contacts to crystalline silicon solar cells, although our framework is material agnostic and can be equally applied to any other type of absorber. In these simulations, the hole contact and absorber are assumed to be ideal, whereas we vary the partial specific contact resistances in the electron contact by orders of magnitude by adjusting the electron and hole mobilities, their densities (through variations of the donor doping density), and the contact thickness. The simulations confirm the finding of the model that, when the contact fraction cannot be adjusted—as is the case with full-area contacts—combined passivation and conductivity are necessary and sufficient for optimal solar cell performance, and they imply selectivity. However, the reciprocal is not true: contacts can be selective but lack conductivity—causing a deleterious drop in fill factor—or can be selective but provide poor passivation—leading to a reduction in implied open-circuit voltage and, hence, actual open-circuit voltage. Furthermore, selectivity is a meaningful metric in the sole case of partial-area contacts, where the contact fraction can be adjusted arbitrarily.

14 SOLAR ENERGY↗
DOE OSTI2020

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced direct current conductance. Our findings are explained based on the established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes the possibility to tune their electronic response based on oxidation conditions, opening the door for domain-wall-based sensor technology.

Schultheiß, J. (ORCID:0000000173891295)↗