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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,117 records · Page 62
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

A High-Power Density Segmented Traction Drive Inverter

High power density is one of the requirements for traction drive inverters for meeting increasing demand for higher power and performance electrical vehicles (EV). This paper presents design and preliminary experimental results for a 100 kW high-power density inverter for EV traction drive applications. The inverter design was based on the segmented inverter topology that can significantly reduce the inverter DC filter capacitor and employs low-profile planar double-sided cooled SiC MOSFET-based power modules, compact mini-channel heat sinks with fin-profile optimized using genetic-algorithms, and high-ripple current capacitors. The design produced a compact inverter package with a total volume less than 1 litter, exceeding the power density goal of 100 kW/L. Experimental results are included to demonstrate the cooling and electrical performance.

Su, Gui-Jia↗
DOE OSTI2019

Updates on the Progress of the Alternate Topology Modulator (AT-HVCM) to support the Proton Power Upgrade (PPU) at the Spallation Neutron Source

The AT-HVCM, achieved by series-stacking the dual-function resonant filter capacitors following each rectification stage, is the baseline design for the PPU project at the SNS [1]. The project requires three AT-HVCM modulators to power 28 additional 700kW klystrons and associated high beta cavities to accelerate 38mA of beam current to 1.3GeV. Each modulator produces an 82 kV, 120A output pulse of 1.35ms duration at a 60Hz repetition rate. The AT design approach improves upon the existing HVCM topology, reducing stresses on the H bridge IGBTs using zero voltage (ZVS) and current switching (ZCS) techniques and on the resonant filter capacitors by limiting voltage reversal. This paper reviews the prototype development progress, currently focused on evaluating system reliability, and discusses some design techniques to achieve the modulator performance requirements.

Solley, Dennis J.↗
DOE OSTI2023

A Novel LCC-CLCC Resonant Tuning Network for Light-Load Conditions in Wireless Power Transfer Systems

In wireless power transfer (WPT) systems, voltage and current distortions are observed at the vehicle side rectifier when power flow is from grid to vehicle (G2V) under light load conditions. These distortions can increase switching losses and decrease the overall efficiency of the WPT system. To address this issue, this paper proposes adding a higher value inductor in series with the original LCC tuning network at the vehicle side. However, increasing the series inductance causes the input impedance and phase angle to move away from the resonant frequency. To solve this problem, a capacitor is added in series to tune out the difference between the original and modified inductor values. This series tuning capacitor also improves the power factor and brings the input impedance and phase angle back to the resonant frequency. The traditional LCC-LCC and proposed LCC-CLCC WPT systems are compared and analyzed analytically, and simulated in a MATLAB/Simulink environment to verify parameters such as efficiency and power transfer capacity. An experimental prototype is implemented and compared with the simulation. The obtained results confirm the validity of the proposed method.

Harave, Sudarshan↗
DOE OSTI2026

Failure Mode and Effects Analysis (FMEA) for Photovoltaic Inverter

Photovoltaic (PV) inverters are critical yet vulnerable components in modern energy systems, often acting as reliability bottlenecks that increase the levelized cost of energy (LCOE). To address this, this paper presents a comprehensive Failure Mode and Effects Analysis (FMEA) tailored for PV inverters. Leveraging field data and literature, we identify failure-prone components, such as capacitors,, and relays, and prioritize their risks based on quantitative Risk Priority Numbers (RPNs). The analysis reveals that surge-induced MOV short circuits, capacitor degradation, and environmental cooling fan failures dominate the risk profile. These findings provide a targeted framework for reliability improvement, guiding future efforts in predictive diagnostics, design optimization, and accelerated life testing strategies.

14 SOLAR ENERGY↗
DOE OSTI2020

Impedance-Based Prediction of SSR-Generated Harmonics in Doubly-Fed Induction Generators

Doubly-fed induction generators (DFIGs) are prone to subsynchronous resonance (SSR) with series-compensated transmission lines and experiencing SSR-generated harmonics of wide-ranging magnitudes. This paper presents a large-signal impedance-based approach for the prediction of the magnitude of SSR-generated harmonics in DFIGs. Note that the large-signal impedance of a network shows variation in its impedance response with the magnitude of perturbation at its terminals. It is discovered in this paper that the impedance of a series-compen- sated transmission line starts changing with the magnitude of SSR because of the metal-oxide varistor-based protection of series capacitors in the line. The changing line impedance halts the growth of the SSR beyond a certain point, where the DFIG forms a limit-cycle mode and emits harmonics at the SSR frequency. The discovered role of the protection of series capacitors in SSR not only enables the prediction of SSR-generated harmonics but also can be used for the timely detection of an SSR event to avoid system disruption and sudden loss of bulk generation. The large- signal impedance-based prediction of SSR-generated harmonics in DFIG-based wind and hydro generators is demonstrated using numerical simulations of a 2.5-MVA, 690-V DFIG supplying to a series-compensated transmission line.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2019

A VSM-Based DER Dispatch MINLP for Volt-VAR Control in Unbalanced Power Distribution Systems

This paper presents an optimal dispatch algorithm to coordinate customer-owned controllable loads and smart solar inverters with utility-owned voltage regulators and capacitors to meet voltage control objectives. The optimization problem is formulated as a mixed-integer nonlinear programming (MINLP) problem. A voltage sensitivity matrix (VSM) is used to linearize the effect of control actions on the voltage at customer nodes when solving the MINLP. The VSM is recalculated at each time step to improve the computational accuracy. Both discrete switching actions of the capacitor and VRs and the continuous adjustment of real and reactive power from load and smart inverters are considered in the MINLP volt-var problem formulation. The objective function minimizes the cost of all control actions and the magnitude of voltage fluctuations from the previous time period. Constraints ensure that the voltage at each node is maintained within ANSI limits and the feeder power factor is controlled within the desired range. The algorithm is tested using an actual 3-phase unbalanced distribution feeder model. Simulation results demonstrate that the proposed algorithm is computationally feasible on real circuits and improves voltage control while minimizing operational costs.

McEntee, Catie↗
DOE OSTI2020

A Hierarchical Volt-var Optimization with Discrete Variables in Unbalanced Distribution Systems

This paper proposes a framework to determine the optimal active and reactive power dispatch of distributed photovoltaic (PV) generation, switched capacitors, and voltage regulators in multi-phase unbalanced distribution systems. The objectives of the optimal dispatch are minimization of the energy loss, PV real power curtailment, and switching operations of capacitors and voltage regulators, in addition to elimination of voltage violation and reverse power flow. The optimization problem is formulated in rectangular coordinates as a nonlinear, nonconvex problem with discrete variables. A hierarchical twostage framework is proposed to effectively handle those discrete variables and reduce the computational time compared to the unified approach in which all variables are solved simultaneously. The efficacy of the proposed approach and the accuracy of the obtained numerical solution is validated using the unbalanced multi-phase IEEE 34-bus with 15-minute load and PV data.

Nguyen, Quan H.↗
DOE OSTI2024

Experimental Analysis of Distribution Network Voltage Regulation Using Smart Inverters

Smart inverters (SIs) have demonstrated their potential to provide grid services for both transmission and distribution systems. One of these grid services, distribution network voltage regulation by SIs, has the potential to improve network voltage regulation through controlling the reactive and active power output of the SIs. Voltage regulation by SIs will be distributed and might be better suited to controlling local conditions to complement traditional voltage-regulating assets, e.g., tap-changing transformers, capacitor banks, and line voltage regulators. There is a gap in the literature on comparing the SI response characteristics when the SIs are controlled by a local controller or external control signals. This paper presents an experimental study to characterize SI reactive power regulation responses to two different control methods: autonomous control and remote dispatch. We found that SI reactive power regulation responses exhibit important differences between these methods in terms of delays and ramp rate. Finally, power-hardware-in-the-loop (PHIL) tests were conducted to evaluate the performance of these two methods. The PHIL test results show that the SI response characteristics for autonomous control and remote dispatch need to be considered when planning for distribution network voltage regulation using SIs.

autonomous control↗
DOE OSTI2015

MEMS closed-loop control incorporating a memristor as feedback sensing element

In this work the integration of a memristor with a MEMS parallel plate capacitor coupled by an amplification stage is simulated. It is shown that the MEMS upper plate position can be controlled up to 95% of the total gap. Due to its common operation principle, the change in the MEMS plate position can be interpreted by the change in the memristor resistance, or memristance. A memristance modulation of ~1 KΩ was observed. A polynomial expression representing the MEMS upper plate displacement as a function of the memristance is presented. Thereafter a simple design for a voltage closed-loop control is presented showing that the MEMS upper plate can be stabilized up to 95% of the total gap using the memristor as a feedback sensing element. As a result, the memristor can play important dual roles in overcoming the limited operation range of MEMS parallel plate capacitors and in simplifying read-out circuits of those devices by representing the motion of the upper plate in the form of resistance change instead of capacitance change.

42 ENGINEERING↗
DOE OSTI2020

Current Observer Based Predictive Decoupled Power Control Grid-Interactive Inverter

This paper presents a sensor-less current model predictive control (MPC) scheme via a full state observer based current estimator. The grid interactive inverters’ control schemes require current and voltage sensors. Elimination of current sensor enhances the inverter reliability. This paper leverages the inherent characteristics of MPC towards robust current sensor-less grid interactive inverter with LC filter. The observer for inductor current is developed based on the existing capacitor voltage measurement. The estimator dynamic state-space matrices are then obtained through reconstruction of the inverter model with the capacitor voltage and inductor current being the state variables. The controller objectives are to regulate active and reactive power in a decoupled manner. The theoretical expectation, controller performance, and accuracy of the current estimation are verified by conducting a real-time simulation via Typhoon HIL.

Zhang, Zhen↗
DOE OSTI2020

Busbar Design and Optimization for Voltage Overshoot Mitigation of a Silicon Carbide High-Power Three-Phase T-Type Inverter

The silicon carbide (SiC) devices have faster switching speed than that of the conventional silicon (Si) devices, which however may cause excessive device voltage overshoot. Larger gate resistance can help to restrain the overshoot, it however slows down the switching speed and increases switching losses. There are other methods that can mitigate the voltage overshoot, e.g., using low-inductance busbars, adding snubber circuits, etc. In this article, the busbar design for a 250-kW SiC three-level T-type inverter is investigated. The current commutation loops (CCLs) are first analyzed using a single-phase equivalent circuit. Then the detailed busbar design methods, especially a 3-D busbar design concept, are proposed to select the optimal stacking order for the multilayer laminated busbar and to address constraints posed by the physical terminal arrangements of SiC modules and dc-link capacitors. The stray inductance in each CCL is extracted via a finite element analysis and validated on the actual inverter busbar prototypes using an impedance analyzer. To further minimize the busbar stray inductance, a hybrid busbar structure with printed circuit board based buffer circuit using high-frequency decoupling capacitors is designed and evaluated in this article. Lastly, the effectiveness of the designed busbars as well as the buffer circuit are validated using experimental studies.

42 ENGINEERING↗
DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗
DOE OSTI2021

A Single Passive Gate-Driver for Series Connected Power Devices in DC Circuit Breaker Applications

This letter proposes a novel single passive gate driver solution based on passive devices to control series-connected power semiconductor devices for dc circuit breaker (DCCB) applications. The transient suppression devices (e.g., metal oxide varistors) are utilized to achieve natural voltage balancing among the series devices, while providing the discharge path of the gate capacitor of the upper devices. Here, the proposed method is very simple, cost effective and more compact compared with conventional voltage balancing method-based DCCBs. Besides, gate voltage oscillation during the voltage recovery process is mitigated by the addition of an extra gate capacitor. Simulation and experimental results are provided to verify the effectiveness of proposed method.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection

This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.

14 SOLAR ENERGY↗
DOE OSTI2014

Effect of postdeposition annealing on the electrical properties of β-Ga{sub 2}O{sub 3} thin films grown on p-Si by plasma-enhanced atomic layer deposition

Ga{sub 2}O{sub 3} dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga{sub 2}O{sub 3} thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900 °C for 30 min under N{sub 2} ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga{sub 2}O{sub 3} thin films were then investigated by fabricating and characterizing Al/β-Ga{sub 2}O{sub 3}/p-Si metal–oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Q{sub eff}) were calculated from the capacitance–voltage (C-V) curves using the flat-band voltage shift and were found as 2.6 × 10{sup 12}, 1.9 × 10{sup 12}, and 2.5 × 10{sup 12} cm{sup −2} for samples annealed at 700, 800, and 900 °C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO{sub 2} layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900 °C, and by the Frenkel–Poole emission model for film annealed at 800 °C. Leakage current density was found to improve with annealing temperature. β-Ga{sub 2}O{sub 3} thin film annealed at 800 °C exhibited the highest reverse breakdown field value.

36 MATERIALS SCIENCE↗