Electrophysiological Properties from Computations at a Single Voltage: Testing Theory with Stochastic Simulations
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Michael A. Wilson↗
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Series-Connected Buck Boost Regulators
A series-connected buck boost regulator (SCBBR) is an electronic circuit that bucks a power-supply voltage to a lower regulated value or boosts it to a higher regulated value. The concept of the SCBBR is a generalization of the concept of the SCBR, which was reported in "Series-Connected Boost Regulators" (LEW-15918), NASA Tech Briefs, Vol. 23, No. 7 (July 1997), page 42. Relative to prior DC-voltage-regulator concepts, the SCBBR concept can yield significant reductions in weight and increases in power-conversion efficiency in many applications in which input/output voltage ratios are relatively small and isolation is not required, as solar-array regulation or battery charging with DC-bus regulation. Usually, a DC voltage regulator is designed to include a DC-to-DC converter to reduce its power loss, size, and weight. Advances in components, increases in operating frequencies, and improved circuit topologies have led to continual increases in efficiency and/or decreases in the sizes and weights of DC voltage regulators. The primary source of inefficiency in the DC-to-DC converter portion of a voltage regulator is the conduction loss and, especially at high frequencies, the switching loss. Although improved components and topology can reduce the switching loss, the reduction is limited by the fact that the converter generally switches all the power being regulated. Like the SCBR concept, the SCBBR concept involves a circuit configuration in which only a fraction of the power is switched, so that the switching loss is reduced by an amount that is largely independent of the specific components and circuit topology used. In an SCBBR, the amount of power switched by the DC-to-DC converter is only the amount needed to make up the difference between the input and output bus voltage. The remaining majority of the power passes through the converter without being switched. The weight and power loss of a DC-to-DC converter are determined primarily by the amount of power processed. In the SCBBR, the unswitched majority of the power is passed through with very little power loss, and little if any increase in the sizes of the converter components is needed to enable the components to handle the unswitched power. As a result, the power-conversion efficiency of the regulator can be very high, as shown in the example of Figure 1. A basic SCBBR includes a DC-to-DC converter (see Figure 2). The switches and primary winding of a transformer in the converter is connected across the input bus, while the secondary winding and switches are connected in series with the output bus, so that the output voltage is the sum of the input voltage and the secondary voltage of the converter. In the breadboard SCBBR, the input voltage applied to the primary winding is switched by use of metal oxide/semiconductor field-effect transistors (MOSFETs) in a full bridge circuit; the secondary winding is center-tapped, with two MOSFET switches and diode rectifiers connected in opposed series in each leg. The sets of opposed switches and rectifiers are what enable operation in either a boost or a buck mode. In the boost mode, input voltage and current, and the output voltage and current are all positive; that is, the secondary voltage is added to the input voltage and the net output voltage can be regulated at a value equal or greater than the input voltage. In the buck mode, input voltage is still positive and the current still flows in the same direction in the secondary, but the switches are controlled such that some power flows from the secondary to the primary. The voltage across the secondary and the current into the primary are reversed. The result is that the output voltage is lower than the input voltage, and some power is recirculated from the converter secondary back to the input. Quantitatively, the advantage of an SCBBR is a direct function of the regulation range required. If, for example, a regulation range of 20 percent is required for a 500-W supply, th it suffices to design the DC-to-DC converter in the SCBBR for a power rating of only 100 W. The switching loss and size are much smaller than those of a conventional regulator that must be rated for switching of all 500 W. The reduction in size and the increase in efficiency are not directly proportional to switched-power ratio of 5:1 because the additional switches contribute some conduction loss and the input and output filters must be larger than those typically required for a 100-W converter. Nevertheless, the power loss and the size can be much smaller than those of a 500-W converter.
Birchenough, Arthur G.↗
Battery Cell By-Pass Circuit
The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.
Evers, Jeffrey↗
Battery Cell By-Pass Circuit
The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.
Susan J Mumaw↗
Four-Quadrant Analog Multipliers Using G4-FETs
Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.
Mojarradi, Mohammad↗
Serial Charging Test on High Capacity Li-Ion Cells for the Orbiter Advanced Hydraulic Power System
Although it looks like module level voltage drives the cutoff for charge, the actual cutoff is due to unbalanced cell voltages that drive the module voltage up. Individual cell voltage drives the cutoff for discharge Low resistance cells are the first to reach the low-voltage cutoff Cell-to-Cell voltage differences are generally small and show similar trends for each cycle Increase for a distinct window during charge and at the end of discharge Increase in max to min cell voltage difference with time/cycles Decrease in max to min cell voltage difference during high current pulses with time/cycles Individual cell voltage trends (with respect to other cells) are very repeatable from cycle to cycle, although voltage slowly degrades with time/cycles (resistance growth) Much more difference observed near end of discharge Little change in order of cell voltage (cell with highest voltage to cell with lowest voltage) Temp sensor on the side of cell (between 2 cells) shows much greater rise during discharge than for single cell tests (18 C vs 5 C) Conclusion: Serial Charging of this string of cells is feasible as it has only a minor impact on useful capacity
Jeevarajan, Judith A.↗
Modular Battery Charge Controller
A new approach to masterless, distributed, digital-charge control for batteries requiring charge control has been developed and implemented. This approach is required in battery chemistries that need cell-level charge control for safety and is characterized by the use of one controller per cell, resulting in redundant sensors for critical components, such as voltage, temperature, and current. The charge controllers in a given battery interact in a masterless fashion for the purpose of cell balancing, charge control, and state-of-charge estimation. This makes the battery system invariably fault-tolerant. The solution to the single-fault failure, due to the use of a single charge controller (CC), was solved by implementing one CC per cell and linking them via an isolated communication bus [e.g., controller area network (CAN)] in a masterless fashion so that the failure of one or more CCs will not impact the remaining functional CCs. Each micro-controller-based CC digitizes the cell voltage (V(sub cell)), two cell temperatures, and the voltage across the switch (V); the latter variable is used in conjunction with V(sub cell) to estimate the bypass current for a given bypass resistor. Furthermore, CC1 digitizes the battery current (I1) and battery voltage (V(sub batt) and CC5 digitizes a second battery current (I2). As a result, redundant readings are taken for temperature, battery current, and battery voltage through the summation of the individual cell voltages given that each CC knows the voltage of the other cells. For the purpose of cell balancing, each CC periodically and independently transmits its cell voltage and stores the received cell voltage of the other cells in an array. The position in the array depends on the identifier (ID) of the transmitting CC. After eight cell voltage receptions, the array is checked to see if one or more cells did not transmit. If one or more transmissions are missing, the missing cell(s) is (are) eliminated from cell-balancing calculations. The cell-balancing algorithm is based on the error between the cell s voltage and the other cells and is categorized into four zones of operation. The algorithm is executed every second and, if cell balancing is activated, the error variable is set to a negative low value. The largest error between the cell and the other cells is found and the zone of operation determined. If the error is zero or negative, then the cell is at the lowest voltage and no balancing action is needed. If the error is less than a predetermined negative value, a Cell Bad Flag is set. If the error is positive, then cell balancing is needed, but a hysteretic zone is added to prevent the bypass circuit from triggering repeatedly near zero error. This approach keeps the cells within a predetermined voltage range.
Button, Robert↗
Behavior of 2-Cell CPV Ni-H2 Battery During Pulse Discharge
A study was carried out to determine the transient voltage behavior of the 2-cell CPV nickel-hydrogen battery with the objective of using the results as a basis for mathematical modeling. The 2-cell CPV battery which is manufactured by Eagle Picher, Inc. for the GOES program yields 18.5 Ah at C/2 rate of discharge at 10 C with a mid-discharge voltage of 2.514 V. The capacity increased with decrease of temperature and a maximum capacity of 22 Ah was obtained at -5 C. The pulse tests consisted of obtaining the voltage profile in the first 20 milliseconds of the one minute pulse discharge at 37 A and pulse discharge was repeated as a function of state- of- charge. The pulse test at 10 C and 20 C provided voltage profiles with the expected decrease in voltage as the pulse was applied. The end of pulse voltage decreased with the state-of-charge. The battery voltage was above 2V at the end of the one-minute pulse at 8 % state-of-charge at 10 C. The voltage profile during the 37 A pulse discharge consists of an initial drop in voltage which was independent of the state of charge. The invariability in the value for the initial drop in voltage with state of charge is a very important observation. The results show that towards the end of discharge the dominant resistance is not ohmic in nature. It could be hypothesized from the nature of the voltage transients that the dominant mechanism towards the end of discharge is proton diffusion. The study also shows that the dominant resistance in the voltage plateau during discharge is activation polarization.
Vaidyanathan, Hari↗
Behavior of 2-Cell CPV Ni-H2 Battery During Pulse Discharge
A study was carried out to determine the transient voltage behavior of the 2-cell CPV nickel-hydrogen battery with the objective of using the results as a basis for mathematical modeling. The 2-cell CPV battery which is manufactured by Eagle Picher, Inc. for the GOES program yields 18.5 Ah at C/2 rate of discharge at 10 C with a mid-discharge voltage of 2.514 V. The capacity increased with decrease of temperature and a maximum capacity of 22 Ah was obtained at -5 C. The pulse tests consisted of obtaining the voltage profile in the first 20 milliseconds of the one minute pulse discharge at 37 A and pulse discharge was repeated as a function of state-of-charge. The pulse test at 10 C and 20 C provided voltage profiles with the expected decrease in voltage as the pulse was applied. The end of pulse voltage decreased with the state-of-charge. The battery voltage was above 2V at the end of the one-minute pulse at 8 % state-of-charge at 10 C. The voltage profile during the 37 A pulse discharge consists of an initial drop in voltage which was independent of the state of charge. The invariability in the value for the initial drop in voltage with state of charge is a very important observation. The results show that towards the end of discharge the dominant resistance is not ohmic in nature. It could be hypothesized from the nature of the voltage transients that the dominant mechanism towards the end of discharge is proton diffusion. The study also shows that the dominant resistance in the voltage plateau during discharge is activation polarization.
Vaidyanathan, Hari↗
Behavior of 2 Cell CPV NI-H2 Battery During Pulse Discharge
A study was carried out to determine the transient voltage behavior of the 2-cell CPV nickel-hydrogen battery with the objective of using the results as a basis for mathematical modeling. The 2-cell CPV battery which is manufactured by Eagle Picher, Inc. for the GOES program yields 18.5 Ah at C/2 rate of discharge at 10 C with a mid-discharge voltage of 2.514 V. The capacity increased with decrease of temperature and a maximum capacity of 22 Ah was obtained at - 5 C. The pulse test consisted of obtaining the voltage profile in the first 20 milliseconds of the one minute pulse discharge at 37 A and pulse discharge was repeated as a function of state-of-charge. The pulse test at 10 C and 20 C provided voltage profiles with the expected decrease in voltage as the pulse was applied. The end of pulse voltage decreased with the state-of-charge. The battery voltage was above 2V at the end of the one-minute pulse at 12% state-of-charge at 10 C. The voltage profile during the 37 A pulse discharge consists of an initial drop in voltage which was independent of the state of charge. The invariability in the value for the initial drop in voltage with state of charge is a very important observation and indicates that towards the end of discharge the dominant resistance is not ohmic in nature. It could be hypothesized from the nature of the voltage transients that the dominant mechanism towards the end of discharge is proton diffusion. The study also shows that the dominant resistance in the voltage plateau during discharge is activation polarization.
Gopalakrishna, M. Rao↗
Ferroresonant flux coupled battery charger
A battery charger for incorporation into an electric-powered vehicle is disclosed. The charger includes a ferroresonant voltage-regulating circuit for providing an output voltage proportional to the frequency of an input AC voltage. A high frequency converter converts a DC voltage supplied, for example, from a rectifier connected to a standard AC outlet, to a controlled frequency AC voltage which is supplied to the input of the ferroresonant circuit. The ferroresonant circuit includes an output, a saturable core transformer connected across the output, and a first linear inductor and a capacitor connected in series across the saturable core transformer and tuned to resonate at the third harmonic of the AC voltage from the high frequency converter. The ferroresonant circuit further includes a second linear inductor connected between the input of the ferroresonant circuit and the saturable core transformer. The output voltage from the ferroresonant circuit is rectified and applied across a pair of output terminals adapted to be connected to the battery to be charged. A feedback circuit compares the voltage across the output terminals with a reference voltage and controls the frequency of the AC voltage produced by the high frequency converter to maintain the voltage across the output terminals at a predetermined value. The second linear inductor provides a highly reactive load in the event of a fault across the output terminals to render the charger short-circuit proof.
McLyman, Colonel W. T.↗
Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration
Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.
DeGregorio, Kelly↗
Gas Composition Sensing Using Carbon Nanotube Arrays
This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substrate is connected to a variable-pulse voltage source. The CNT tips are spaced appropriately from the second electrode maintained at a constant voltage. A sequence of voltage pulses is applied and a pulse discharge breakdown threshold voltage is estimated for one or more gas components, from an analysis of the current-voltage characteristics. Each estimated pulse discharge breakdown threshold voltage is compared with known threshold voltages for candidate gas components to estimate whether at least one candidate gas component is present in the gas. The procedure can be repeated at higher pulse voltages to estimate a pulse discharge breakdown threshold voltage for a second component present in the gas. The CNTs in the gas sensor have a sharp (low radius of curvature) tip; they are preferably multi-wall carbon nanotubes (MWCNTs) or carbon nanofibers (CNFs), to generate high-strength electrical fields adjacent to the tips for breakdown of the gas components with lower voltage application and generation of high current. The sensor system can provide a high-sensitivity, low-power-consumption tool that is very specific for identification of one or more gas components. The sensor can be multiplexed to measure current from multiple CNT arrays for simultaneous detection of several gas components.
Li, Jing↗
Simple Cell Balance Circuit
A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.
Johnson, Steven D.↗
Controlling Electron Backstreaming Phenomena Through the Use of a Transverse Magnetic Field
DEEP-SPACE mission propulsion requirements can be satisfied by the use of high specific impulse systems such as ion thrusters. For such missions. however. the ion thruster will be required to provide thrust for long periods of time. To meet the long operation time and high-propellant throughput requirements, thruster lifetime must be increased. In general, potential ion thruster failure mechanisms associated with long-duration thrusting can be grouped into four areas: (1) ion optics failure; (2) discharge cathode failure; (3) neutralizer failure; and (4) electron backstreaming caused by accelerator grid aperture enlargement brought on by accelerator grid erosion. The work presented here focuses on electron backstreaming. which occurs when the potential at the center of an accelerator grid aperture is insufficient to prevent the backflow of electrons into the ion thruster. The likelihood of this occurring depends on ion source operation time. plasma density, and grid voltages, as accelerator grid apertures enlarge as a result of erosion. Electrons that enter the gap between the high-voltage screen and accelerator grids are accelerated to the energies approximately equal to the beam voltage. This energetic electron beam (typically higher than 1 kV) can damage not only the ion source discharge cathode assembly. but also any of the discharge surfaces upstream of the ion acceleration optics that the electrons happen to impact. Indeed. past backstreaming studies have shown that near the backstreaming limit, which corresponds to the absolute value of the accelerator grid voltage below which electrons can backflow into the thruster, there is a rather sharp rise in temperature at structures such as the cathode keeper electrode. In this respect operation at accelerator grid voltages near the backstreaming limit is avoided. Generally speaking, electron backstreaming is prevented by operating the accelerator grid at a sufficiently negative voltage to ensure a sufficiently negative aperture center potential. This approach can provide the necessary margin assuming an expected aperture enlargement. Operation at very negative accelerator grid voltages, however, enhances ion charge-exchange and direct impingement erosion of the accelerator grid. The focus of the work presented here is the mitigation of electron backstreaming by the use of a magnetic field. The presence of a magnetic field oriented perpendicular to the thruster axis can significantly decrease the magnitude of the backflowing electron current by significantly reducing the electron diffusion coefficient. Negative ion sources utilize this principle to reduce the fraction of electrons in the negative ion beam. The focus of these efforts has been on the attenuation of electron current diffusing from the discharge plasma into the negative ion extraction optics by placing the transverse magnetic field upstream of the extraction electrodes. In contrast. in the case of positive ion sources such as ion thrusters, the approach taken in the work presented here is to apply the transverse field downstream of the ion extraction system so as to prevent electrons from flowing back into the source. It was found in the work presented here that the magnetic field also reduces the absolute value of the electron backstreaming limit voltage. In this respect. the applied transverse magnetic field provides two mechanisms for electron backstreaming mitigation: (1) electron current attenuation and (2) backstreaming limit voltage shift. Such a shift to less negative voltages can lead to reduced accelerator grid erosion rates.
Foster, John E.↗
Cascaded resonant bridge converters
A converter for converting a low voltage direct current power source to a higher voltage, high frequency alternating current output for use in an electrical system where it is desired to use low weight cables and other circuit elements. The converter has a first stage series resonant (Schwarz) converter which converts the direct current power source to an alternating current by means of switching elements that are operated by a variable frequency voltage regulator, a transformer to step up the voltage of the alternating current, and a rectifier bridge to convert the alternating current to a direct current first stage output. The converter further has a second stage series resonant (Schwarz) converter which is connected in series to the first stage converter to receive its direct current output and convert it to a second stage high frequency alternating current output by means of switching elements that are operated by a fixed frequency oscillator. The voltage of the second stage output is controlled at a relatively constant value by controlling the first stage output voltage, which is accomplished by controlling the frequency of the first stage variable frequency voltage controller in response to second stage voltage. Fault tolerance in the event of a load short circuit is provided by making the operation of the first stage variable frequency voltage controller responsive to first and second stage current limiting devices. The second stage output is connected to a rectifier bridge whose output is connected to the input of the second stage to provide good regulation of output voltage wave form at low system loads.
Stuart, Thomas A.↗
Mechanically Biased, Hinged Pairs of Piezoelectric Benders
The upper part of the figure depicts an actuator that comprises two mechanically biased piezoelectric benders hinged together at their ends and equipped with tabs at their mid-length points for attachment to the relatively moving objects that are to be actuated. In the example of the figure, the attachment tabs are labeled to indicate that the actuator is used to drive a pump piston relative to a base plate. Actuators of this type could be used to drive low-power, small-volume pumps in consumer, medical, and aerospace applications, and to generate and measure linear displacements in such robotic applications as teleoperation and tactile feedback. Each bender is a bimorph a unitary plate that comprises an upper and a lower piezoelectric layer plus electrode layers. Benders may also be made of several layers arranged to produce the same effect at the lower operating voltages. As stated above, each bender is mechanically biased; it is fabricated to have a small permanent curvature (the bias curvature) in the absence of applied voltage. As on other bimorphs, the electrical connections on each bender are arranged so that an applied voltage of suitable polarity causes the upper layer to expand and the lower layer to contract. In this case, the net effect of applying the voltage is that the plate becomes more concave as viewed from below. Conversely, an applied voltage of the opposite polarity causes the plate to become less concave as viewed from below. The benders in a hinged pair are oriented with their bias curvatures concave inward, so that there is a bias distance between the attachment tabs. The two benders are connected electrically in parallel, with their connection polarities chosen so that an applied voltage of one polarity causes both benders to become more convex inward (more bent), while an applied voltage of the opposite polarity causes both benders to become less convex inward (less bent). An increase or decrease in bend is accompanied by an increase or decrease in distance between the attachment tabs; this increase or decrease is the linear displacement desired for actuation. Because the displacement can be either positive or negative relative to the bias distance, depending on the polarity of the applied voltage, the overall stroke achievable for a given magnitude of applied voltage is double the stroke achievable in the absence of mechanical bias. Each hinged pair can be regarded as a unit cell that can serve as a building block for a larger actuator: Multiple unit cells can be stacked (mechanically connected in series), as shown in the lower part of the figure, and electrically connected in parallel to multiply the overall stroke achievable at a given applied voltage.
Sager, Frank E.↗
Low-to-Medium Power Single Chip Digital Controlled DC-DC Regulator for Point-of-Load Applications
A DC-DC converter for generating a DC output voltage includes: a digitally controlled pulse width modulator (DPWM) for controlling a switching power stage to supply a varying voltage to an inductor; and a digital voltage feedback circuit for controlling the DPWM in accordance with a feedback voltage corresponding to the DC output voltage, the digital voltage feedback circuit including: a first voltage controlled oscillator for converting the feedback voltage into a first frequency signal and to supply the first frequency signal to a first frequency discriminator; a second voltage controlled oscillator for converting a reference voltage into a second frequency signal and to supply the second frequency signal to a second frequency discriminator; a digital comparator for comparing digital outputs of the first and second frequency discriminators and for outputting a digital feedback signal; and a controller for controlling the DPWM in accordance with the digital feedback signal.
Adell, Philippe C.↗