DOE OSTI2011
FACET at SLAC provides high charge, high peak current, low emittance electron beam that is bunched at THz wavelength scale during its normal operation. A THz light source based coherent transition radiation (CTR) from this beam would potentially be the brightest short-pulse THz source ever constructed. Efforts have been put into building this photon source together with a user area, to provide a platform to utilize this unique THz radiation for novel nonlinear and ultrafast phenomena researches and experiments. Being a long-time underutilized portion of the electromagnetic spectrum, terahertz (100 GHz {approx} 10 THz) spectral range is experiencing a renaissance in recent years, with broad interests from chemical and biological imaging, material science, telecommunication, semiconductor and superconductor research, etc. Nevertheless, the paucity of THz sources especially strong THz radiation hinders both its commercial applications and nonlinear processes research. FACET - Facilities for Accelerator science and Experimental Test beams at SLAC - provides 23 GeV electron beam with peak currents of {approx} 20 kA that can be focused down to 100 {mu}m{sup 2} transversely. Such an intense electron beam, when compressed to sub-picosecond longitudinal bunch length, coherently radiates high intensity EM fields well within THz frequency range that are orders of magnitude stronger than those available from laboratory tabletop THz sources, which will enable a wide variety of THz related research opportunities. Together with a description of the FACET beamline and electron beam parameters, this paper will report FACET THz radiation generation via coherent transition radiation and calculated photon yield and power spectrum. A user table is being set up along the THz radiation extraction sites, and equipped with various signal diagnostics including THz power detector, Michelson interferometer, sample stages, and sets of motorized optical components. This setup will also be presented. Potential THz research areas including studies of magnetism, ferroelectric switching dynamics, semiconductor devices and chemical reaction controls have already been proposed for the FACET THz area.
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