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At least 1,099 records · Page 61

Structural evolution of two-dimensional silicates using a “bond-switching” algorithm

Silicates are the most abundant materials in the earth's crust. In recent years, two-dimensional (2D) versions of them grown on metal supports (known as bilayer silicates) have allowed their study in detail down to the atomic scale. These structures are self-containing. Furthermore, they are not covalently bound to the metal support but interact with it through van der Waals forces. Like their three-dimensional counterparts, the 2D-silicates can form both crystalline and vitreous structures. Furthermore, the interconversion between vitreous to crystalline structures has been experimentally observed at the nanoscale. While theoretical work has been carried out to try to understand these transformations, a limitation for ab initio methods, and even molecular dynamics methods, is the computational cost of studying large systems and long timescales. In this work, we present a simple and computationally inexpensive approach, that can be used to represent the evolution of bilayer silicates using a bond-switching algorithm. This approach allows reaching equilibrium ring size distributions as a function of a parameter that can be related to the ratio between temperature and the energy required for the bond-switching event. The ring size distributions are compared to experimental data available in the literature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Imaging of voltage-controlled switching of magnetization in highly magnetostrictive epitaxial Fe–Ga microstructures

The magnetoelectric behavior of epitaxial Fe–Ga microstructures on top of a (001)-oriented PMN–PT piezoelectric substrate is imaged with magnetic X-ray microscopy. Additionally, the micron-scale strain distribution in PMN–PT is characterized by X-ray microdiffraction and examined with respect to the results of the Fe–Ga magnetoelectric switching. The magnetic reorientation of Fe–Ga is found to be strongly correlated with size, shape, and crystallographic orientation of the microstructures. In the case of square-shaped structures, size dictates the influence of the strain distribution on both the initialization of the ground state and on the magnetic reorientation during application of voltage. On the other hand, elliptical microstructures demonstrate completely different magnetic responses depending on the relative orientation of their long axis with respect to the crystallographic directions of the PMN–PT. This study demonstrates that engineering the behavior of highly magnetostrictive epitaxial microdevices is possible. It further elucidates that voltage-induced actuation can be largely tuned to achieve the desired type of magnetic switching ranging from vortex circulation reversal, domain wall motion, to a large rotation of magnetization. Because of the outstanding properties of the investigated material system, the reported findings are expected to be of great interest for the realization of next-generation energy-efficient magnetic memory and logic devices.

42 ENGINEERING↗

Deep‐learning‐based power distribution network switch action identification leveraging dynamic features of distributed energy resources

This study proposes a data‐driven approach for identifying switch actions in power distribution networks. Simulated micro‐phasor measurement unit data is utilised to train a convolutional neural network (CNN) model. The trained CNN model can identify multi‐phase multi‐switch actions. Instead of working as a blackbox, the proposed approach extracts the features from the hidden layers of the trained CNN for engineering interpretation and error check. In addition, a random‐forest‐based feature ranking algorithm is proposed to identify the most important features. The proposed approach is validated on the IEEE 123‐node feeder modelled in GridLAB‐D. The CNN model is built and trained using TensorFlow. The proposed approach achieves 96.57% identification accuracy.

42 ENGINEERING↗

Current dependence of spin torque switching rate based on Fokker-Planck approach

The spin torque switching rate of an in-plane magnetized system in the presence of an applied field is derived by solving the Fokker-Planck equation. It is found that three scaling currents are necessary to describe the current dependence of the switching rate in the low-current limit. The dependences of these scaling currents on the applied field strength are also studied.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Resistive switching properties of Ce and Mn co-doped BiFeO{sub 3} thin films for nonvolatile memory application

The Ce and Mn co-doped BiFeO{sub 3} (BCFMO) thin films were synthesized on Pt/Ti/SiO{sub 2}/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large R{sub OFF}/R{sub ON} ratio (>80), long retention time (>10{sup 5} s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.

36 MATERIALS SCIENCE↗

Magnetic manipulation by resistance switching in CeO{sub 2}/PrBa{sub 2}Cu{sub 3}O{sub 7−δ}/Pt heterostructure: The role of oxygen vacancies

Pronounced bipolar resistance switching with a good retention property has been observed in CeO{sub 2}/PrBa{sub 2}Cu{sub 3}O{sub 7−δ}/Pt heterostructure. The low resistance state and high resistance state exhibited distinguished ferromagnetic signals, as compared to the nearly non-magnetic initial state. It is found that the migration of the oxygen vacancies under electric field is mainly responsible for the electric and the magnetic changes. The modified interfacial electronic structure by the oxygen vacancy migration and the trapping/detrapping of the carriers leads to the resistance switching. The exchange interaction of the hydrogen-like orbitals formed around the singly occupied oxygen vacancies in CeO{sub 2} is accounting for the emerged and modulated ferromagnetic signals. Temperature dependence of resistance in the low resistance state follows a variable range hopping law, further confirming that the amount of oxygen vacancies in the CeO{sub 2} layer directly affects the hydrogen-like orbital radius, which determines the strength of the ferromagnetic coupling.

36 MATERIALS SCIENCE↗

Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO{sub 3}:Nb/ZnO heterojunctions

Epitaxial ZnO thin films were grown on SrTiO{sub 3}:Nb (NSTO) substrates by pulsed laser deposition. The NSTO/ZnO heterojunctions exhibit a typical rectification characteristic under a small voltage, while two attendant behaviors of bipolar resistive switching and negative differential resistance appear under a large voltage. The NSTO/ZnO heterojunctions show extremely weak resistance switching hysteresis without applying a forward bias. However, when the forward bias increases to some extent, the hysteresis becomes more and more prominent and negative differential resistance gradually appears. Furthermore, the high resistance state is obtained when sweeping from negative to positive voltage bias, and vice versa. We propose a model for these behaviors at NSTO/ZnO interface, in which the space charge region in ZnO is wide in high resistance state when the interface state is unoccupied, while the space charge region becomes narrower in low resistance state due to Fermi pinning when the interface state is completely occupied, and the low resistance state is remained until electrons are detrapped from the interface state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Towards forming-free resistive switching in oxygen engineered HfO{sub 2−x}

We have investigated the resistive switching behavior in stoichiometric HfO{sub 2} and oxygen-deficient HfO{sub 2−x} thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO{sub 2−x} thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultrafast thermally induced magnetic switching in synthetic ferrimagnets

Synthetic ferrimagnets are composite magnetic structures formed from two or more anti-ferromagnetically coupled magnetic sublattices with different magnetic moments. Here, we report on atomistic spin simulations of the laser-induced magnetization dynamics on such synthetic ferrimagnets and demonstrate that the application of ultrashort laser pulses leads to sub-picosecond magnetization dynamics and all-optical switching in a similar manner as in ferrimagnetic alloys. Moreover, we present the essential material properties for successful laser-induced switching, demonstrating the feasibility of using a synthetic ferrimagnet as a high density magnetic storage element without the need of a write field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Chiral-induced self-assembly sphere phase liquid crystal with fast switching time

A fluid self-assembly sphere phase (SP) of liquid crystal induced by chiral dopant is observed in a narrow temperature range between isotropic and blue phase or between isotropic and chiral nematic phase. The SP consists of three-dimensional twist spheres (3-DTSs) and disclinations among 3-DTSs. The temperature range of the SP has been broadened to more than 85 °C by stabilizing the disclinations with amorphous polymer chains. The electro-optical switching time of the polymer-stabilized SP is demonstrated in sub-millisecond with a low switching electric field of 4.4 V μm{sup −1}, which is of promising applications in displays, 3-D tunable photonic crystals, and phase modulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Open-loop correction for an eddy current dominated beam-switching magnet

A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10{sup −4} to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the required flat-top period. The measured field flatness was 5 × 10{sup −3}. By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10{sup −4}, which is an acceptable value, was achieved.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Size dependence of magnetization switching and its dispersion of Co/Pt nanodots under the assistance of radio frequency fields

We have studied the dot size dependence of microwave assisted magnetization switching (MAS) on perpendicular magnetic Co/Pt multilayer dot array. The significant microwave assistance effect has been observed over the entire dot size D ranging from 50 nm to 330 nm examined in the present study. The MAS behavior, however, critically depends on D. The excitation frequency dependence of the switching field is well consistent with the spin wave theory, indicating that the magnetization precession in MAS is in accordance with the well defined eigenmodes depending on the dot diameter. The lowest order spin wave is only excited for D ≤ 100 nm, and then the MAS effect is well consistent with that of the single macrospin prediction. On the other hand, higher order spin waves are excited for D > 100 nm, giving rise to the significant enhancement of the MAS effect. The dispersion of MAS effect also depends on D and is significantly reduced for the region of D > 100 nm. This significant reduction of the dispersion is attributed to the essential feature of the MAS effect which is insensitive to the local fluctuation of anisotropy field, such as defect, damaged layer, and so on.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of Cu doping on the resistive switching of NiO thin films

Bipolar resistive switching is observed in the GaIn/Cu:NiO film/ITO device with active layer deposited by sol-gel spin-coating. The first-principles calculations indicate that Cu dopants with valence of +1 are located at the substitutional Ni sites rather than the interstitial ones. Cu doping introduces more oxygen vacancies in the film and increases the carrier mobility, however, excessive Cu dopants may assemble at the grain boundary resulting in larger set voltage. Current–voltage measurements indicate that the trap charge limited and space charge limited conduction dominate the high resistance state, while the low resistance state follows the Ohmic mechanism. The switching is attributed to the formation/rupture of oxygen vacancy filaments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetization switching and inverted hysteresis in perpendicular antiferromagnetic superlattices

The magnetization of antiferromagnetic (AFM) superlattices as a function of applied field was investigated using Monte Carlo simulations. The simulated hysteresis loops of systems with N magnetic layers with AFM coupling between the layers exhibit distinct steps with magnetization that decreases with increasing N . Systems with odd N exhibit 3 steps and inverted hysteresis for N > 3, whereas systems with even N exhibit 4 steps, for N > 2, and their microscopic switching sequence is non-deterministic and can take two distinct pathways, even though the switching of the global magnetization is exactly reversible. Here, magnetic superlattice structures are attractive for the development of meta-materials with unique properties. In antiferromagnetic (AFM) multilayer structures, where ferromagnetic (FM) layers are coupled antiferromagnetically and the strength of the inter-layer interaction is on the order of the Zeeman energy, meta-magnetic transitions can be induced by moderate magnetic fields. In such systems, the properties can be easily tuned by modifying the inter-layer interactions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ferroelectric switching in epitaxial GeTe films

In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

36 MATERIALS SCIENCE↗

Optimization of spin-torque switching using AC and DC pulses

We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗