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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Recovery Act: Multimodal Imaging for Solar Cell Microcrack Detection

Undetected microcracks in solar cells are a principal cause of failure in service due to subsequent weather exposure, mechanical flexing or diurnal temperature cycles. Existing methods have not been able to detect cracks early enough in the production cycle to prevent inadvertent shipment to customers. This program, sponsored under the DOE Photovoltaic Supply Chain and Cross-Cutting Technologies program, studied the feasibility of quantifying surface micro-discontinuities by use of a novel technique, thermoreflectance imaging, to detect surface temperature gradients with very high spatial resolution, in combination with a suite of conventional imaging methods such as electroluminescence. The project carried out laboratory tests together with computational image analyses using sample solar cells with known defects supplied by industry sources or DOE National Labs. Quantitative comparisons between the effectiveness of the new technique and conventional methods were determined in terms of the smallest detectable crack. Also the robustness of the new technique for reliable microcrack detection was determined at various stages of processing such as before and after antireflectance treatments. An overall assessment is that the new technique compares favorably with existing methods such as lock-in thermography or ultrasonics. The project was 100% completed in Sept, 2010. A detailed report of key findings from this program was published as: Q.Zhou, X.Hu, K.Al-Hemyari, K.McCarthy, L.Domash and J.Hudgings, High spatial resolution characterization of silicon solar cells using thermoreflectance imaging, J. Appl. Phys, 110, 053108 (2011).

14 SOLAR ENERGY↗
DOE OSTI2012

Breakthrough: Better Fiber for Better Products

Researchers at Idaho National Laboratory have developed a cost-effective method for the continuous production of alpha silicon carbide fiber. The exceptionally strong, lightweight fiber could enable significant performance improvements in many everyday products.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Damp Heat Induced Degradation of Silicon Heterojunction Solar Cells With Cu-Plated Contacts

Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. Damp heat stresses and induces a variety of degradation modes in solar cells and modules: for example, moisture-induced corrosion of electrodes and interconnections, deterioration of polymeric materials, and/or thermally activated diffusion processes. To screen for these and other potential degradation modes, we subject one-cell modules containing silicon heterojunction (SHJ) solar cells with Cu-plated contacts to extended damp heat tests at 85 °C/85% relative humidity. SHJ cells were laminated with two common encapsulants: ethylene vinyl acetate (EVA) and polyolefin elastomer (POE), and two constructions: glass-backsheet and glass-glass. We observe degradation in all components of solar cell maximum power (PMP): current, voltage, and fill factor, and find evidence of increased carrier recombination and nonideal diode behavior with increasing stress. For glass-backsheet constructions, EVA samples generally degrade more than POE by a factor of approximately 1.5x PMP, and the different encapsulants produce different degradation patterns. Similar trends are observed in glass-glass modules, but to a lesser degree. In a different experiment, we observe a decrease in effective minority carrier lifetime of nonmetallized SHJ precursors measured after damp heat. This implies that some degradation unrelated to the contacts is to be expected and confirms the observation of increasing recombination.

14 SOLAR ENERGY↗
DOE OSTI2019

Results from 2015 and the 2016 upgrade of the CONNIE experiment for detecting coherent neutrino nucleus scattering

The CONNIE Experiment (Coherent Neutrino Nucleus Interaction Experiment) is currently collecting reactor neutrino data to search for the undiscovered standard model process of coherent neutrino-nucleus scattering (CNNS). The detector is composed of a silicon target of thick, fully-depleted, low-noise CCD detectors. Results from data collected in 2015 indicate backgrounds are controlled, and allow an estimate of sensitivity to be presented for a larger scale detector. A 2016 upgrade, adding additional target mass, and reducing readout noise, has been performed, increasing the total yield of signal events by a factor of 30, and already yielding science-quality data. Low-energy nuclear calibrations have been performed, enabling calibration down to the device energy threshold. An estimate of the sensitivity expected for measuring the coherent neutrino process is presented. Future prospects with improved detector energy thresholds are estimated.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗
DOE OSTI2015

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2 s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq / cm 2 . Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ∼4.6 eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

The Effect of Ligands and Solvents on Nonradiative Transitions in Semiconductor Quantum Dots (A Review)

Data on quantum yields and photoluminescence decay times of quantum dots have been collected. Photoprocesses that occur in quantum dots are compared with photoprocesses occurring in complex organic molecules in the condensed phase. The review consists of the introduction, three parts, and conclusions. The first two parts are devoted to quantum dots that are formed by indirect-gap semiconductors. The first part is devoted to data on the photoluminescence quantum yields and decay times of carbon quantum dots, and Table 1 presents selected values and short comments to these data. Table 2 of the same part presents data on fast relaxation processes in the same objects. In the second part, Tables 3 and 4, as well as the following text, contain similar information about silicon quantum dots. Data on photoprocesses in quantum dots formed by direct-gap semiconductors are collected in the third part. Data on the photoluminescence yields, decay times, and relaxation processes are listed in Tables 5 and 6. Particular attention in the present review is given to the effect that a change in the frequency of vibrations in the environment of a quantum dot has on the photoluminescence yields and the rate of relaxation processes between electronic levels in bands, which indicates that the inductive resonance mechanism of nonradiative transitions is applicable to these systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Near-infrared free carrier absorption in heavily doped silicon

Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications

This article reports the demonstration of a low-voltage (<; 600V) monolithically integrated 4H-silicon carbide (SiC) MOSFET and JBS diode (JBSFET). A singlemetal and thermal treatment process were implemented to form ohmic contacts on the n+ and p+ source regions while forming the Schottky contact on the N- SiC epitaxial layer. Different layout methodologies are discussed for fabricating an energy-efficient low-voltage JBSFET by intermittently placing the JBS diode portion in the orthogonal direction to minimize the device area, hence improving the specific ON-resistance and reducing the overall chip size by 46%. A junction termination extension (JTE)-based edge termination structure (the Hybrid-JTE) was implemented to achieve a high breakdown voltage with a very low leakage current. In addition, it was investigated that the forward characteristic of the JBSFET can be further improved by adopting Ti-based metal as the Schottky contact for the JBS diode. Device design, layout approach, fabrication, electrical characterization, and future prospects of the 4H-SiC JBSFETs are discussed in this article.

42 ENGINEERING↗
DOE OSTI2020

Additive manufacturing of silicon carbide for nuclear applications

Additive manufacturing (AM) is a rapidly evolving technology being considered for nuclear applications. A special focus on AM to fabricate nuclear-grade silicon carbide (SiC) is explored in this paper. First, we present currently available AM processing options for SiC. AM methods commonly used for other ceramics, in which the feedstocks are forms of polymers, powders, and/or reactive chemical vapors, are also applicable to SiC. SiC phases are formed by pyrolysis of pre-ceramic polymer, direct reaction of powder precursors, sintering of SiC powders, or chemical vapor deposition/infiltration. Second, we discuss how the different microstructures of SiC materials fabricated by various processing methods affect their behavior in nuclear environments. Third, we discuss state-of-the-art AM technologies for the fabrication of relatively pure SiC, which show great potential to retain its strength under neutron irradiation: (1) binder jet printing followed by chemical vapor infiltration, (2) laser chemical vapor deposition, and (3) selective laser sintering of SiC powders.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Residual Stresses Affect Cell Fragment Movement

Predictive modeling tools such as the finite element method can be of tremendous help in assessing the reliability and long-term performance of photovoltaic modules. In order to obtain accurate results, the proper modeling of materials and manufacturing processes are of utmost importance. Module fabrication introduces thermo-mechanical stresses inside the module laminate, which need to be accounted for as residual stresses in finite element simulations. We found that cell fragment movement and crack opening displacements of fractured silicon cells within modules are affected by those residual stresses. Cell cracking remains a challenging topic in assessing the reliability and durability of damaged modules. Hence, accurately quantifying the separation and movement between cell fragments creates the foundation for establishing reliable lifetime and performance assessments of fractured silicon modules. Here, we present a modeling approach that uses upper and lower bounds to accurately account for the residual stresses introduced by the module lamination process. We designed a four-point flexure coupon test of a laminated, fractured silicon strip to validate our numerical results and found good agreement between our modeling methodology and the experimental data. Finally, we discuss the implications of the residual stresses on the normal crack opening and metallization wear-out of fractured silicon cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Characterization of the molecular mechanisms of silicon uptake in coccolithophores

Coccolithophores are an important group of calcifying marine phytoplankton. Although coccolithophores are not silicified, some species exhibit a requirement for Si in the calcification process. These species also possess a novel protein (SITL) that resembles the SIT family of Si transporters found in diatoms. However, the nature of Si transport in coccolithophores is not yet known, making it difficult to determine the wider role of Si in coccolithophore biology. Here, we show that coccolithophore SITLs act as Na + -coupled Si transporters when expressed in heterologous systems and exhibit similar characteristics to diatom SITs. We find that CbSITL from Coccolithus braarudii is transcriptionally regulated by Si availability and is expressed in environmental coccolithophore populations. However, the Si requirement of C. braarudii and other coccolithophores is very low, with transport rates of exogenous Si below the level of detection in sensitive assays of Si transport. As coccoliths contain only low levels of Si, we propose that Si acts to support the calcification process, rather than forming a structural component of the coccolith itself. Si is therefore acting as a micronutrient in coccolithophores and natural populations are only likely to experience Si limitation in circumstances where dissolved silicon (DSi) is depleted to extreme levels.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2010

Contribution to the Study of Ferrite Nanobeads: Synthesis, Characterization and Investigation of Horizontal Low Gradient Magnetophoresis Behaviour

In this work we investigate the possibilities of the use of Horizontal Low Gradient Magnetic Field (HLGMF)(<100 T/m) for filtration, control and separation of the synthesized magnetic particles, considering, the characteristics of the suspension, the size and the type of nanoparticles (NPs) and focusing on the process scale up. Reversible aggregation is considered in the different steps of magnetic nanobeads synthesis. For these purpose, we synthesized Fe{sub 2}O{sub 3}-silica core-shell nanobeads by co-precipitation, monodispersion and silica coating. SQUID, TEM, XRD, and Zeta potential techniques were used to characterize the synthesized nanobeads. An extensive magnetophoresis study was performed at different magnetophoretic conditions. Different reversible aggregation times were observed at different HLGMF, at each step of the synthesis route: Several orders of magnitude differences where observed when comparing citric acid (CA) suspension with silicon coated beads. Reversible aggregation times are correlated with the properties of the NPs at different steps of synthesis.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Piezoresistive characterization of bottom-up, n-type silicon microwires undergoing bend deformation

The piezoresistance of silicon has been studied over the past few decades in order to characterize the material's unique electromechanical properties and investigate their wider applicability. While bulk and top-down (etched) micro- and nano-wires have been studied extensively, less work exists regarding bottom-up grown microwires. A facile method is presented for characterizing the piezoresistance of released, phosphorus-doped silicon microwires that have been grown, bottom-up, via a chemical vapour deposition, vapour-liquid-solid process. The method uses conductive tungsten probes to simultaneously make electrical measurements via direct ohmic contact and apply mechanical strain via bend deformation. These microwires display piezoresistive coefficients within an order of magnitude of those expected for bulk n-type silicon; however, they show an anomalous response at degenerate doping concentrations (∼10{sup 20 }cm{sup −3}) when compared to lower doping concentrations (∼10{sup 17 }cm{sup −3}), with a stronger piezoresistive coefficient exhibited for the more highly doped wires. This response is postulated to be due to the different growth mechanism of bottom-up microwires as compared to top-down.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Microstructures of the silicon carbide nanowires obtained by annealing the mechanically-alloyed amorphous powders

Silicon, graphite and boron nitride powders were mechanically alloyed for 40 h in argon. The as-milled powders were annealed at 1700 °C in nitrogen for 30 min. The annealed powders are covered by a thick layer of gray–green SiC nanowires, which are 300 nm to 1000 nm in diameter and several hundred microns in length. Trace iron in the raw powders acts as a catalyst, promoting the V–L–S process. It follows that the actual substances contributing to the growth of the SiC nanowires may be silicon, graphite and the metal impurities in the raw powders. The results from HRTEM and XRD reveal that the products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. It is interestingly found that 6H–SiC coexists with 3C–SiC in one nodular nanowire. This novel structure may introduce periodic potential field along the longitudinal direction of the nanowires, and may find applications in the highly integrated optoelectronic devices. - Graphical abstract: Display Omitted - Highlights: • SiC nanowires were prepared by annealing the mechanically alloyed amorphous powders. • SiC nanowires are 300 nm to 1000 nm in diameter and several hundred microns in length. • The products contain both straight α/β-SiC nanowires and nodular α/β-SiC nanochains. • Trace Fe in the raw powders acts as a catalyst, promoting the V–L–S process. • 6H–SiC coexists with 3C–SiC in one nodular SiC nanowire.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

Low-Gain Avalanche Diodes are a recently-developed class of silicon sensors. Characterized by an internal moderate gain that enhances the signal amplitude and if built on thin silicon substrates of a few tens of microns, they feature fast signals and exhibit excellent timing performance. Thanks to their fast timing they are planned to be exploited in timing detectors in High-Energy Physics experiments, for example for the upgrades of the ATLAS and CMS detectors at the High Luminosity Large Hadron Collider (HL-LHC) at CERN. However, to achieve a spatially uniform multiplication a large pixel pitch is needed, preventing a fine spatial resolution. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. The fabrication technology is similar for the two LGAD families, although a fine tuning of a few process parameters needs to be carefully studied. Other R&D efforts towards detectors that can simultaneously provide good time and spatial resolution, based on the LGAD concept, are under way. These efforts aim also to mitigate the loss of performance at high irradiation fluences due to the acceptor removal within the gain layer. In this paper we describe the main points in the fabrication of LGADs and AC-LGADs in a clean-room. We also discuss novel efforts carried on related topics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗