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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Characteristic properties of macroporous silicon sintering in an argon atmosphere

The temperature and time dependences of the sintering of macroporous silicon in Ar or Ar + 3% H{sub 2} are studied. The contribution of various mechanisms governing this process is determined. The specific features of the sintering of macroporous silicon are examined by means of isochronous and isothermal annealing of the samples with ordered and random macropores in the temperature range 1000–1225°C. It is found that the sintering of macroporous silicon under atmospheric pressure in an inert gas flow containing 2 × 10–4% O{sub 2} is greatly affected by thermal etching. Thermal etching competes with the substance-transfer processes characteristic of sintering and hinders the formation of a defect-free surface crust. The reason for etching consists in that gaseous silicon monoxide is generated and then carried away by the gas flow. The etching effect is dominant in the low-temperature range and is independent of whether H{sub 2} is added. The values obtained for the activation energy of the silicon diffusion coefficient, E{sub a} = 2.57 eV, and for the exponent n = 3.31–3.74 in the time dependence of the pore radius, r ~ t{sup 1/n} are indicative of a mixed substance-transfer mechanism via the surface and volume diffusion of silicon atoms.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Internally coated air-cooled gas turbine blading

Ten candidate modified nickel-aluminide coatings were developed using the slip pack process. These coatings contain additives such as silicon, chromium and columbium in a nickel-aluminum coating matrix with directionally solidified MAR-M200 + Hf as the substrate alloy. Following a series of screening tests which included strain tolerance, dynamic oxidation and hot corrosion testing, the Ni-19A1-1Cb (nominal composition) coating was selected for application to the internal passages of four first-stage turbine blades. Process development results indicate that a dry pack process is suitable for internal coating application resulting in 18 percent or less reduction in air flow. Coating uniformity, based on coated air-cooled blades, was within + or - 20 percent. Test results show that the presence of additives (silicon, chromium or columbium) appeared to improve significantly the ductility of the NiA1 matrix. However, the environmental resistance of these modified nickel-aluminides were generally inferior to the simple aluminides.

Hsu, L.↗
NASA NTRS2015

Crystal Growth of Germanium-Silicon Alloys on the ISS

A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The experiments are part of the investigation "Influence of Containment on the Growth of Silicon-Germanium" (ICESAGE). The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. This meniscus can exist over a much larger range of processing parameters in microgravity and the meniscus is more stable under microgravity conditions. The plans for the flight experiments will be described.

Volz, M. P.↗
DOE OSTI2020

Joining Techniques for Novel Metal Polymer Hybrid Heat Exchangers

In the United States, over 50% of the unrecovered energy from industrial processes is in the form of low-grade heat (< 220°C). Materials and maintenance costs of common heat exchangers are typically too high to justify their usage. Polymers, though more affordable, are usually unsuitable for HX applications due to their low thermal conductivity (~0.2 W/mK). Here, we show that metal-polymer hybrids may be attractive from both performance and cost perspectives. The use of polymers further increases the resistance to corrosion by sulfuric and carbonic acids often present in flue gases. An ongoing work explores different configurations of layered polyimide-copper macroscale hybrids for heat exchanger applications using numerical simulations. This paper explores a manufacturing pathway for producing such layered hybrid tubes that involves directly rolling and bonding tapes made of polymer and copper foil into tubes. A critical problem in the fabrication process is the bonding of metal and polymers. We explore approaches involving adhesives (epoxy, acrylic and silicone) for metal/polymer interfaces and direct welding (ultrasonic) for metal/metal interfaces that can be integrated into the manufacturing process. We report characterizations of the thermomechanical properties of these joining processes. This work paves the way for realizing cost-effective manufacturing of heat exchangers for low grade waste heat recovery.

Kuntumalla, Gowtham↗
DOE OSTI2017

Silicon quantum processor with robust long-distance qubit couplings

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1977

Synthesis of silane and silicon in a non-equilibrium plasma jet

The feasibility of using a non-equilibrium hydrogen plasma jet as a chemical synthesis tool was investigated. Four possible processes were identified for further study: (1) production of polycrystalline silicon photovoltaic surfaces, (2) production of SiHCl3 from SiCl4, (3) production of SiH4 from SiHCl3, and (4) purification of SiCl4 by metal impurity nucleation. The most striking result was the recognition that the strongly adhering silicon films, amorphous or polycrystalline, produced in our studies could be the basis for preparing a photovoltaic surface directly; this process has potential advantages over other vapor deposition processes.

Calcote, H. F.↗
NASA NTRS1983

Evaluation of ceramics for stator applications: Gas turbine engines interim report. Stator fabrication and evaluation

The objective was to assess current ceramic materials, fabrication processes, reliability prediction, and stator durability when subjected to simulated automotive gas turbine engine operating conditions. Ceramic one-piece stators were fabricated of two materials, silicon nitride and silicon carbide, using two near-net-shape processes, slip casting and injection molding. Non-destructive evaluation tests were conducted on all stators identifying irregularities which could contribute to failures under durability testing. Development of the test rig and automatic control system for repeatably controlling air flow rate and temperature over a highly transient durability duty cycle is discussed. Durability results are presented for repeated thermal cycle testing of the ceramic one-piece stators. Two duty cycles were used, encompassing the temperature ranges of 704 to 1204 C (1300 to 2200 F) and 871 to 1371 C (1600 to 2500 F). Tests were conducted on 28 stators, accumulating 135,551 cycles in 2441 hours of hot testing. Cyclic durability for the ceramic one-piece stator was demonstrated to be in excess of 500 hours, accumulating over 28,850 thermal cycles. Ceramic interface forces were found to be the significant factor in limiting stator life rather than the scatter in material strength properties or the variation in component defects encountered.

Arnon, N.↗
NASA NTRS1983

A probabilistic analysis of silicon cost

Silicon materials costs represent both a cost driver and an area where improvement can be made in the manufacture of photovoltaic modules. The cost from three processes for the production of low-cost silicon being developed under the U.S. Department of Energy's (DOE) National Photovoltaic Program is analyzed. The approach is based on probabilistic inputs and makes use of two models developed at the Jet Propulsion Laboratory: SIMRAND (SIMulation of Research ANd Development) and IPEG (Improved Price Estimating Guidelines). The approach, assumptions, and limitations are detailed along with a verification of the cost analyses methodology. Results, presented in the form of cumulative probability distributions for silicon cost, indicate that there is a 55% chance of reaching the DOE target of $16/kg for silicon material. This is a technically achievable cost based on expert forecasts of the results of ongoing research and development and do not imply any market prices for a given year.

Reiter, L. J.↗
DOE OSTI2016

Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

Here, a femtosecond pump–probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ~300–500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping; while for intrinsic films with large hydrogen content and some texture, it was the standard electron–phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley–Read–Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.

14 SOLAR ENERGY↗
DOE OSTI2018

Passivation Threshold for the Oxidation of Liquid Silicon and Thermodynamic Non-equilibrium in the Gas Phase

The present study focuses on a specific step of the metallurgical path of purification to provide solar-grade silicon: the removal of boron through the injection of H{sub 2}O(g)-H{sub 2}(g)-Ar(g) (cold gas process). A progressive increase of the oxidant H{sub 2}O(g) concentration at injection increases the speed of the process until a silica layer appears at the surface of the liquid silicon to be purified. It then stops the purification. During the process, silica aerosols may form in the gas boundary layer. This modifies the flows of oxidants and the gas concentrations at the liquid silicon surface. Using a monodimensional model, this article shows that a hypothesis of thermodynamic equilibrium of silica aerosols with the gas phase in the boundary layer has to be dropped in order to explain the appearance of a silica passivating layer. The passivation threshold is defined as the limit concentration of the oxidant at the injection below which there is no silica on the liquid silicon surface and beyond which silica particles appear on the liquid silicon surface. Three experiments of estimation of the passivation threshold with the injection of water vapor are used to confirm an empirical criterion for the prediction of the appearance of the silica layer. Two other sets of experiments with the injection of Ar-O{sub 2} are also being studied where the kinetics of the formation of silica aerosols seems to be slower than when water vapor is used. An optimization of the speed of boron removal under the assumption of a maximal concentration of water vapor before the appearance of a passivating silica layer would require an increase of the liquid silicon surface temperature from the fusion temperature of silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Pitfalls in parameters: practical process development in chemical vapor processing of SiC

Vapor processing of high-value materials, such as silicon carbide (SiC), is of interest for many industries, including aerospace and energy production. Chemical vapor infiltration (CVI) of additively manufactured components is an especially attractive manufacturing process currently in development. Here, a novel development workflow is demonstrated with the H 2 –CH 3 SiCl 3 gas system for SiC to accelerate the process optimization of CVI SiC. A combination of calculated thermodynamics and high-throughput experimental chemical vapor deposition (CVD) coatings substantially reduced the experiments required with slow CVI processes. The computational results accurately predicted changes in the thermodynamic conditions tested, while CVD coatings – characterized by Raman spectroscopy – addressed changes in kinetic parameters. This workflow is also applicable to other vapor-processing systems, such as pyrolytic carbon, ZrC, or Si 3 N 4 .

Lamm, Benjamin W. [Oak Ridge National Laboratory (↗
NASA NTRS1981

Recrystallization of polycrystalline silicon

Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

Lall, C.↗
NASA NTRS1982

Apparatus for sequentially transporting containers

Apparatus for transferring and manipulating a plurality of containers in a sequence is disclosed including a mechanical manipulator arm having a gripping device which automatically picks up a container at a fixed pickup position P and transfers it to a processing station. At a processing station X, the container is loaded with silicon wafers and thereafter returned by the arm to the fixed position P at the pickup and return station Y. A plurality of the containers may be processed in sequence from the fixed pickup position by providing a movable carriage upon which container pedestal platforms are supported, at least one of which is an elevator platform. The platforms include abutments for properly positioning the containers for accurate pickup by the manipulator arm.

Hudgins, J. L.↗
NASA NTRS1986

Improved silicon carbide for advanced heat engines

Work performed to develop silicon carbide materials of high strength and to form components of complex shape and high reliability is described. A beta-SiC powder and binder system was adapted to the injection molding process and procedures and process parameters developed capable of providing a sintered silicon carbide material with improved properties. The initial effort has been to characterize the baseline precursor materials (beta silicon carbide powder and boron and carbon sintering aids), develop mixing and injection molding procedures for fabricating test bars, and characterize the properties of the sintered materials. Parallel studies of various mixing, dewaxing, and sintering procedures have been carried out in order to distinguish process routes for improving material properties. A total of 276 MOR bars of the baseline material have been molded, and 122 bars have been fully processed to a sinter density of approximately 95 percent. The material has a mean MOR room temperature strength of 43.31 ksi (299 MPa), a Weibull characteristic strength of 45.8 ksi (315 MPa), and a Weibull modulus of 8.0. Mean values of the MOR strengths at 1000, 1200, and 14000 C are 41.4, 43.2, and 47.2 ksi, respectively. Strength controlling flaws in this material were found to consist of regions of high porosity and were attributed to agglomerates originating in the initial mixing procedures. The mean stress rupture lift at 1400 C of five samples tested at 172 MPa (25 ksi) stress was 62 hours and at 207 MPa (30 ksi) stress was 14 hours. New fluid mixing techniques have been developed which significantly reduce flaw size and improve the strength of the material. Initial MOR tests indicate the strength of the fluid-mixed material exceeds the baseline property by more than 33 percent.

Whalen, T. J.↗
NASA NTRS1979

LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth

The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

Fiegl, G.↗
NASA NTRS1987

Dislocation dynamics of web type silicon ribbon

Silicon ribbon grown by the dendritic web process passes through a rapidly changing thermal profile in the growth direction. This rapidly changing profile induces stresses which produce changes in the dislocation density in the ribbon. A viscoplastic material response function (Haasen-Sumino model) is used herein to calculate the stresses and the dislocation density at each point in the silicon ribbon. The residual stresses are also calculated.

Dillon, O. W., Jr.↗
DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗