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At least 1,099 records · Page 61

Advances in microsensor development for gas and flow measurement in space power and propulsion systems

Emerging microelectromechanical sculpturing technology is presently extended, in conjunction with the use of deep semiconductor impurities having extreme flow sensitivities, small masses for shortest time response, and unconventional electrode schemes for elevated-temperature operation, for rocket-engine fuel flow sensing tasks. The radiation component of heat transfer is negligible, so that the device operates on the basis of conduction and convection loss.

Henderson, H. T.↗

Improved Ferroelectric Memories With Nondestructive Readout

Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}.

Thakoor, Sarita↗

WGM-Based Photonic Local Oscillators and Modulators

Photonic local oscillators and modulators that include whispering-gallery mode (WGM) optical resonators have been proposed as power-efficient devices for generating and detecting radiation at frequencies of the order of a terahertz. These devices are intended especially to satisfy anticipated needs for receivers capable of detecting lowpower, narrow-band terahertz signals to be used for sensing substances of interest in scientific and military applications. At present, available terahertz-signal detectors are power-inefficient and do not afford the spectral and amplitude resolution needed for detecting such signals. The proposed devices would not be designed according to the conventional approach of direct detection of terahertz radiation. Instead, terahertz radiation would first be up-converted into the optical domain, wherein signals could be processed efficiently by photonic means and detected by optical photodetectors, which are more efficient than are photodetectors used in conventional direct detection of terahertz radiation. The photonic devices used to effect the up-conversion would include a tunable optical local oscillator and a novel electro-optical modulator. A local oscillator according to the proposal would be a WGM-based modelocked laser operating at a desired pulserepetition rate of the order of a terahertz. The oscillator would include a terahertz optical filter based on a WGM microresonator, a fiber-optic delay line, an optical amplifier (which could be either a semiconductor optical amplifier or an erbium-doped optical fiberamplifier), and a WGM Ka-band modulator. The terahertz repetition rate would be obtained through harmonic mode locking: for example, by modulating the light at a frequency of 33 GHz and locking each 33d optical mode, one would create a 1.089-THz pulse train. The high resonance quality factors (Q values) of WGM optical resonators should make it possible to decrease signal-generation threshold power levels significantly below those of other optical-signal-generation devices.

Matsko, Andrey↗

Direct analysis of gain-guided phase-locked semiconductor laser arrays

A method for analyzing arbitrary one-dimensional waveguides is described and applied to find the lateral modes of gain-guided laser arrays directly, without the need for a coupled-mode approximation. Detailed results are given for a four-element array for which experimental results are available, and the effect of varying device parameters on the relative gains of the modes is considered. The results show differences between gain-guided and real-index guided arrays which are not evident in prior analyses.

Marshall, W. K.↗

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗

Sub-Kelvin resistance thermometer

A device capable of accurate temperature measurement down to 0.01 K of a particular object is discussed. The device is comprised of the following: a heat sink wafer; a first conducting pad bonded near one end of the heat sink wafer; a second conducting pad bonded near the other end of the heat sink wafer; and an oblong doped semiconductor crystal such as germanium. The oblong doped semiconductor crystal has a third conducting pad bonded on its bottom surface with the oblong doped semiconductor crystal bonded to the heat sink wafer by having the fourth conducting pad bonded to the first conducting pad. A wire is bonded between the second and third conducting pads. Current and voltage wires bonded to the first and second conducting pads measure the change in resistance of the oblong doped semiconductor crystal; this indicates the temperature of the object whose temperature is to be measured.

Castles, Stephen H.↗

MEMS Device Being Developed for Active Cooling and Temperature Control

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Moran, Matthew E.↗

Microelectromechanical Systems (MEMS) Actuator for Reconfigurable Patch Antenna Demonstrated

A microstrip patch antenna with two contact actuators along the radiating edges for frequency reconfiguration was demonstrated at K-band frequencies. The layout of the antenna is shown in the following figure. This antenna has the following advantages over conventional semiconductor varactor-diode-tuned patch antennas: 1. By eliminating the semiconductor diode and its nonlinear I-V characteristics, the antenna minimizes intermodulation signal distortion. This is particularly important in digital wireless systems, which are sensitive to intersymbol interference caused by intermodulation products. 2. Because the MEMS actuator is an electrostatic device, it does not draw any current during operation and, hence, requires a negligible amount of power for actuation. This is an important advantage for hand-held, battery-operated, portable wireless systems since the battery does not need to be charged frequently. 3. The MEMS actuator does not require any special epitaxial layers as in the case of diodes and, hence, is cost effective.

Simons, Rainee N.↗

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

Phillips, Thomas A.↗

Micro-Textured Black Silicon Wick for Silicon Heat Pipe Array

Planar, semiconductor heat arrays have been previously proposed and developed; however, this design makes use of a novel, microscale black silicon wick structure that provides increased capillary pumping pressure of the internal working fluid, resulting in increased effective thermal conductivity of the device, and also enables operation of the device in any orientation with respect to the gravity vector. In a heat pipe, the efficiency of thermal transfer from the case to the working fluid is directly proportional to the surface area of the wick in contact with the fluid. Also, the primary failure mechanism for heat pipes operating within the temperature range of interest is inadequate capillary pressure for the return of fluid from the condenser to the wick. This is also what makes the operation of heat pipes orientation-sensitive. Thus, the two primary requirements for a good wick design are a large surface area and high capillary pressure. Surface area can be maximized through nanomachined surface roughening. Capillary pressure is largely driven by the working fluid and wick structure. The proposed nanostructure wick has characteristic dimensions on the order of tens of microns, which promotes menisci of very small radii. This results in the possibility of enormous pumping potential due to the inverse proportionality with radius. Wetting, which also enhances capillary pumping, can be maximized through growth of an oxide layer or material deposition (e.g. TiO2) to create a superhydrophilic surface.

Yee, Karl Y.↗

Fast, Large-Area, Wide-Bandgap UV Photodetector for Cherenkov Light Detection

Due to limited resources available for power and space for payloads, miniaturizing and integrating instrumentation is a high priority for addressing the challenges of manned and unmanned deep space missions to high Earth orbit (HEO), near Earth objects (NEOs), Lunar and Martian orbits and surfaces, and outer planetary systems, as well as improvements to high-altitude aircraft safety. New, robust, and compact detectors allow future instrumentation packages more options in satisfying specific mission goals. A solid-state ultraviolet (UV) detector was developed with a theoretical fast response time and large detection area intended for application to Cherenkov detectors. The detector is based on the wide-bandgap semiconductor zinc oxide (ZnO), which in a bridge circuit can detect small, fast pulses of UV light like those required for Cherenkov detectors. The goal is to replace the role of photomultiplier tubes in Cherenkov detectors with these solid-state devices, saving on size, weight, and required power. For improving detection geometry, a spherical detector to measure high atomic number and energy (HZE) ions from any direction has been patented as part of a larger space radiation detector system. The detector will require the development of solid-state UV photodetectors fast enough (2 ns response time or better) to detect the shockwave of Cherenkov light emitted as the ions pass through a quartz, sapphire, or acrylic ball. The detector must be small enough to fit in the detector system structure, but have an active area large enough to capture enough Cherenkov light from the sphere. The detector is fabricated on bulk single-crystal undoped ZnO. Inter - digitated finger electrodes and contact pads are patterned via photolithography, and formed by sputtered metal of silver, platinum, or other high-conductivity metal.

Wrbanek, John D.↗

High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules

Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliable high-temperature device packaging technology. This Phase II project developed an ultracompact hybrid power module packaging technology based on the use of double lead frames and direct lead frame-to-chip transient liquid phase (TLP) bonding that allows device operation up to 450 degC. The new power module will have a very small form factor with 3-5X reduction in size and weight from the prior art, and it will be capable of operating from 450 degC to -125 degC. This technology will have a profound impact on power electronics and energy conversion technologies and help to conserve energy and the environment as well as reduce the nation's dependence on fossil fuels.

Elmes, John↗

A 1.06 micrometer avalanche photodiode receiver

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

Eden, R. C.↗

LPE growth of 1.3 micron InGaAsP CW lasers on /110/ InP substrates

A description is presented of the liquid-phase epitaxial (LPE) growth of high-quality InGaAsP/InP continuous-wave (CW) laser structures on (110) InP substrates using conventional LPE without the need for special growth procedures. Double heterojunction laser structures were grown using the LPE supercooling method with a horizontal sliding boat. Low broad-area current densities (970 A/sq cm) and CW operation achieved at room temperature indicate that results comparable to up-to-date devices may be achieved. The inherent tendency for surface planarity maintenance due to the perfect surface stoichiometry of the (110) surface is a feature that may lend itself to the generation of improved interface growth in quaternary III-V and related semiconductor alloy systems. The similar cross-sectional appearance of structures grown on (110) and (100) orientations show that conventional LPE can be used with (110) surface planes without introducing special growth procedures.

Hawrylo, F. Z.↗

High-temperature Complementary Metal Oxide Semiconductors (CMOS)

The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.

Mcbrayer, J. D.↗

Screening Plastic-Encapsulated Solid-State Devices

Suitability of plastic-encapsulated solid-state electronic devices for use in spacecraft discussed. Conclusion of preliminary study was plasticencapsulated parts sufficiently reliable to be considered for use in lowcost equipment used at moderate temperature and low humidity. Useful to engineers as guides to testing or use of plastic encapsulated semiconductors in severe terrestrial environments.

Buldhaupt, L.↗