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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Low-kilovolt coherent electron diffractive imaging instrument based on a single-atom electron source

In this work, a transmission-type, low-kilovolt coherent electron diffractive imaging instrument was constructed. It comprised a single-atom field emitter, a triple-element electrostatic lens, a sample holder, and a retractable delay line detector to record the diffraction patterns at different positions behind the sample. It was designed to image materials thinner than 3 nm. The authors analyzed the asymmetric triple-element electrostatic lens for focusing the electron beams and achieved a focused beam spot of 87 nm on the sample plane at the electron energy of 2 kV. High-angle coherent diffraction patterns of a suspended graphene sample corresponding to (0.62 Å){sup −1} were recorded. This work demonstrated the potential of coherent diffractive imaging of thin two-dimensional materials, biological molecules, and nano-objects at a voltage between 1 and 10 kV. The ultimate goal of this instrument is to achieve atomic resolution of these materials with high contrast and little radiation damage.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Electron emission from particles strongly affects the electron energy distribution in dusty plasmas

The electron energy distribution of a low-temperature dusty plasma has been measured via a Langmuir probe. An unexpected broad peak at energy in the 2–4 V range has been observed. This can be theoretically reproduced for a sufficiently large electron emission rate from the nanoparticles dispersed in the plasma. A careful analysis of the nanoparticle energy balance, using measured values of nanoparticle concentration and plasma density, confirms that particles are sufficiently hot under the conditions of this study to rapidly inject electrons into the plasma via field-assisted thermionic emission. This work suggests that the presence of dust affects the plasma ionization balance more deeply than previously thought.

36 MATERIALS SCIENCE↗
DOE OSTI2016

SU-F-T-70: A High Dose Rate Total Skin Electron Irradiation Technique with A Specific Inter-Film Variation Correction Method for Very Large Electron Beam Fields

Purpose: Rotational total skin electron irradiation (RTSEI) is used in the treatment of cutaneous T-cell lymphoma. Due to inter-film uniformity variations the dosimetry measurement of a large electron beam of a very low energy is challenging. This work provides a method to improve the accuracy of flatness and symmetry for a very large treatment field of low electron energy used in dual beam RTSEI. Methods: RTSEI is delivered by dual angles field a gantry of ±20 degrees of 270 to cover the upper and the lower halves of the patient body with acceptable beam uniformity. The field size is in the order of 230cm in vertical height and 120 cm in horizontal width and beam energy is a degraded 6 MeV (6 mm of PMMA spoiler). We utilized parallel plate chambers, Gafchromic films and OSLDs as a measuring devices for absolute dose, B-Factor, stationary and rotational percent depth dose and beam uniformity. To reduce inter-film dosimetric variation we introduced a new specific correction method to analyze beam uniformity. This correction method uses some image processing techniques combining film value before and after radiation dose to compensate the inter-variation dose response differences among films. Results: Stationary and rotational depth of dose demonstrated that the Rp is 2 cm for rotational and the maximum dose is shifted toward the surface (3mm). The dosimetry for the phantom showed that dose uniformity reduced to 3.01% for the vertical flatness and 2.35% for horizontal flatness after correction thus achieving better flatness and uniformity. The absolute dose readings of calibrated films after our correction matched with the readings from OSLD. Conclusion: The proposed correction method for Gafchromic films will be a useful tool to correct inter-film dosimetric variation for the future clinical film dosimetry verification in very large fields, allowing the optimizations of other parameters.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

Electron Energy-Loss Spectroscopy Study of the Change in the Free-Electron Density in Thin Superconducting NbN Films under Ion-Beam Irradiation

The change in the free-electron density in ultrathin (5 nm) superconducting NbN films in the initial state and after irradiation by O{sup +} ions to doses of (0.1–0.9) × 10{sup 17} cm{sup –2} has been studied by electron energy-loss spectroscopy (EELS). The analysis has been performed on cross section samples prepared by the focused ion beam method, using plasmon oscillations with energies up to 50 eV. The radiation-induced replacement of nitrogen atoms with oxygen atoms in niobium nitride is found to change the electrical properties of the material, which leads to a decrease in the free-electron density with an increase in the irradiation dose.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on {gamma}-LiAlO{sub 2} by metal organic vapor phase epitaxy.

36 MATERIALS SCIENCE↗
DOE OSTI2014

An ITPA joint experiment to study runaway electron generation and suppression

Recent results from an ITPA joint experiment to study the onset, growth, and decay of relativistic electrons (REs) indicate that loss mechanisms other than collisional damping may play a dominant role in the dynamics of the RE population, even during the quiescent I{sub p} flattop. Understanding the physics of RE growth and mitigation is motivated by the theoretical prediction that disruptions of full-current (15 MA) ITER discharges could generate up to 10 MA of REs with 10–20 MeV energies. The ITPA MHD group is conducting a joint experiment to measure the RE detection threshold conditions on a number of tokamaks under quasi-steady-state conditions in which V{sub loop}, n{sub e}, and REs can be well-diagnosed and compared to collisional theory. Data from DIII-D, C-Mod, FTU, KSTAR, and TEXTOR have been obtained so far, and the consensus to date is that the threshold E-field is significantly higher than predicted by relativistic collisional theory, or conversely, the density required to damp REs is significantly less than predicted, which could have significant implications for RE mitigation on ITER.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Narrowing the error in electron correlation calculations by basis set re-hierarchization and use of the unified singlet and triplet electron-pair extrapolation scheme: Application to a test set of 106 systems

A method previously suggested to calculate the correlation energy at the complete one-electron basis set limit by reassignment of the basis hierarchical numbers and use of the unified singlet- and triplet-pair extrapolation scheme is applied to a test set of 106 systems, some with up to 48 electrons. The approach is utilized to obtain extrapolated correlation energies from raw values calculated with second-order Møller-Plesset perturbation theory and the coupled-cluster singles and doubles excitations method, some of the latter also with the perturbative triples corrections. The calculated correlation energies have also been used to predict atomization energies within an additive scheme. Good agreement is obtained with the best available estimates even when the (d, t) pair of hierarchical numbers is utilized to perform the extrapolations. This conceivably justifies that there is no strong reason to exclude double-zeta energies in extrapolations, especially if the basis is calibrated to comply with the theoretical model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

The study of the transition regime between slab and mixed slab-toroidal electron temperature gradient modes in a basic experiment

Electron temperature gradient (ETG) modes are suspected sources of anomalous electron thermal transport in magnetically confined plasmas as in tokamaks. Prior work in the Columbia Linear Machine (CLM) has been able to produce and identify slab ETG modes in a slab geometry [Wei et al., Phys. Plasmas 17, 042108 (2010)]. Now by modifying CLM to introduce curvature to the confining axial magnetic field, we have excited mixed slab-toroidal modes. Linear theory predicts a transition between slab and toroidal ETG modes when (k{sub ∥}R{sub c})/(k{sub y}ρ) ∼1 [J. Kim and W. Horton, Phys. Fluids B 3, 1167 (1991)]. We observe changes in the mode amplitude for levels of curvature R{sub c}{sup −1}≪(k{sub ∥,slab})/(k{sub ⊥}ρ) , which may be explained by reductions in k{sub ∥} in the transition from slab to mixed slab-toroidal modes, as also predicted by theory. We present mode amplitude scaling as a function of magnetic field curvature. Over the range of curvature available in CLM experimentally we find a modest increase in saturated ETG potential fluctuations (∼1.5×), and a substantial increase in the power density of individual mode peaks (∼4–5×)

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Electronic and Optical Properties of a Semiconducting Spinel (Fe 2 CrO 4 )

Epitaxial chromium ferrite (Fe 2 CrO 4 ), prepared by state-of-the-art oxygen plasma assisted molecular beam epitaxy, is shown to exhibit unusual electronic transport properties driven by the crystallographic structure and composition of the material. By replacing 1/3 of the Fe cations with Cr converts the host ferrimagnet from a metal into a semiconductor by virtue of its fixed valence (3+); Cr substitutes for Fe at B sites in the spinel lattice. Conversely, replacing 2/3 of the Fe cations with Cr results in an insulator. Three candidate conductive paths, all involving electron hopping between Fe 2+ and Fe 3+ , are identified in Fe 2 CrO 4 . Moreover, Fe 2 CrO 4 is shown to be photoconductive across the visible portion of the electromagnetic spectrum. As a result, this material is of potential interest for important photo-electrochemical processes such as water splitting.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Surface and Interface Properties in Thin‐Film Solar Cells: Using Soft X‐rays and Electrons to Unravel the Electronic and Chemical Structure

Abstract Thin‐film solar cells have great potential to overtake the currently dominant silicon‐based solar cell technologies in a strongly growing market. Such thin‐film devices consist of a multilayer structure, for which charge‐carrier transport across interfaces plays a crucial role in minimizing the associated recombination losses and achieving high solar conversion efficiencies. Further development can strongly profit from a high‐level characterization that gives a local, electronic, and chemical picture of the interface properties, which allows for an insight‐driven optimization. Herein, the authors' recent progress of applying a “toolbox” of high‐level laboratory‐ and synchrotron‐based electron and soft X‐ray spectroscopies to characterize the chemical and electronic properties of such applied interfaces is provided. With this toolbox in hand, the activities are paired with those of experts in thin‐film solar cell preparation at the cutting edge of current developments to obtain a deeper understanding of the recent improvements in the field, e.g., by studying the influence of so‐called “post‐deposition treatments”, as well as characterizing the properties of interfaces with alternative buffer layer materials that give superior efficiencies on large, module‐sized areas.

Weinhardt, Lothar↗
DOE OSTI2018

A Two-Electron Storage Nonaqueous Organic Redox Flow Battery

We demonstrated a two-electron nonaqueous redox flow battery based on structurally tailored organic phenothiazine catholyte and anthraquinone anolyte materials, with doubled charge storage capacities and two voltage plateaus observed in electrochemical cell tests.

Huang, Jinhua↗
DOE OSTI2017

Experimental and DFT Studies of the Electron-Withdrawing Ability of Perfluoroalkyl (R F ) Groups: Electron Affinities of PAH(R F ) n Increase Significantly with Increasing R F Chain Length

Two series of aromatic compounds with perfluoroalkyl (RF) groups of increasing length, 1,3,5,7-naphthalene(RF)4 and 1,3,5,7,9-corannulene(RF)5, have been prepared and their electronic properties studied by low-temperature PES (i.e., gas-phase electron affinity (EA) measurements). These and many related compounds were also studied by DFT calculations. The data demonstrate unambiguously that the electron-withdrawing ability of RF substituents increases significantly and uniformly from CF3 to C2F5 to n-C3F7 to n-C4F9.

Environmental Molecular Sciences Laboratory↗