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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

From Design to Device: Challenges and Opportunities in Computational Discovery of p -Type Transparent Conductors

A high-performance p -type transparent conductor (TC) does not yet exist but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices. High-throughput computational material screenings have been a promising approach to filter databases and identify new p -type TC candidates and some of these predictions have been experimentally validated. However, most of these predicted candidates do not have experimentally achieved properties on par with n -type TCs used in solar cells and therefore have not yet been used in commercial devices. Thus, there is still a significant divide between transforming predictions into results that are actually achievable in the laboratory and an even greater lag in scaling predicted materials into functional devices. In this perspective, we outline some of the major disconnects in this materials discovery process—from scaling computational predictions into synthesizable crystals and thin films in the laboratory to scaling laboratory-grown films into real-world solar devices—and share insights to inform future strategies for TC discovery and design. Published by the American Physical Society 2024

14 SOLAR ENERGY↗
DOE OSTI2017

Understanding and controlling chromaticity shift in LED devices

Chromaticity shift in light-emitting diode (LED) devices arises from multiple mechanisms, and at least five different chromaticity shift modes (CSMs) have been identified to date. This paper focuses on the impacts of irreversible phosphor degradation as a cause of chromaticity shifts in LED devices. The nitride phosphors used to produce warm white LEDs are especially vulnerable to degradation due to thermal and chemical effects such as reactions with oxygen and water. As a result, LED devices utilizing these phosphors were found to undergo either a green shift or, less commonly, a red shift depending on the phosphor mix in the LED devices. These types of chromaticity shifts are classified as CSM-2 (green shift) and CSM-5 (red shift). This paper provides an overview of the kinetic processes responsible for green and red chromaticity shifts along with examples from accelerated stress testing of 6” downlights. Both CSMs appear to proceed through analogous mechanisms that are initiated at the surface of the phosphor. A green shift is produced by the surface oxidation of the nitride phosphor that changes the emission profile to lower wavelengths. As the surface oxidation reaction proceeds, reactant limitations slow the rate and bulk oxidation processes become more prevalent. We found that a red chromaticity shift arises from quenching of the green phosphor, also possibly due to surface reactions of oxygen, which shift the emission chromaticity in the red direction. In conclusion, we discuss the implications of these findings on projecting chromaticity.

Davis, Lynn↗
DOE OSTI2016

Threshold Switching Characteristics of Nb/NbO 2 /TiN Vertical Devices

Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2019

Potential-Induced Degradation Depends on Leakage Current and Light/Electrical Bias in Cu(In,Ga)Se 2 Devices

Potential-induced degradation (PID) of encapsulated Cu(In,Ga)Se 2 (CIGS) solar cells was researched for different substrates: soda-lime glass (SLG), SLG with an Al 2 O 3 diffusion barrier, and borosilicate glass (BSG). The Al 2 O 3 and BSG samples increased the time to PID failure by 5x and 30x, respectively. The relationship among PID and coulombs transferred from the substrate to the device through leakage current differed depending on the sample type. When the (unrepresentative) dark PID stress test was interrupted to characterize devices with light/electrical bias, PID was partially reversed. Furthermore, applying high voltage stress to open-circuit devices was less damaging, relative to forward-biased and short-circuited cells. Light/electrical bias may therefore reduce PID by driving alkali metal cations away from the p-n junction to diminish their degrading effects. These results show that device light/electrical bias should be carefully controlled during CIGS PID testing, as it affects PID in addition to leakage current.

14 SOLAR ENERGY↗
DOE OSTI2021

Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

In this work, a comprehensive study of random spatial fluctuation of the ferroelectric (FE) phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device variation. It is found that: i) there exists a certain DE percentage threshold that below which the increase of the DE phase does not significantly impact the device memory window and variation and only above which evident device degradation can be observed; ii) increasing the DE phase increases the variation in the memory window and the coercive field distribution further exacerbates the variation, hence degrading the sensing margin; iii) decreasing the number of grains degrades the device variation, which calls for further grain size engineering for variation suppression.

42 ENGINEERING↗
DOE OSTI2024

Transformer Masked Autoencoders for RF Device Fingerprinting

Machine learning methods for RF device fingerprinting typically rely on CNN-based models. Transformer-based models have outperformed CNNs for modulation classification tasks, but there are few implementations for device fingerprinting. We train a transformer for device fingerprinting with the largest device count to date and explore several variations of the architecture. Additionally, we demonstrate that pre-training an RF transformer as a Masked Autoencoder improves classification accuracy, as has been observed for CNN fingerprinting models and vision transformers.

artificial intelligence↗
DOE OSTI2018

HVPE-Grown GaAs//Si Tandem Device Performance

The performance of III-V//Si tandem devices has successfully exceeded the theoretical efficiency limit of single junction Si devices (29.4%) yet the costs associated with these high-efficiency tandem devices are still too high to compete with today's conventional Si solar cells. Recent cost modeling efforts suggest that hydride vapor phase epitaxy (HVPE) could be adopted as an alternative growth technique to metal-organic chemical vapor deposition (MOCVD) because the costs of HVPE are substantially lower and the performance of devices fabricated from HVPE materials are continuously improving. This study reports on our first results of a HVPE-grown GaAs top cell mechanically stacked on a Si bottom cell.

14 SOLAR ENERGY↗
DOE OSTI2021

(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

We demonstrate the growth of (110) GaAs solar cells by hydride vapor phase epitaxy (HVPE) as an advance towards a (110)-oriented device platform with substrate reuse via spalling. Controlled spalling offers a fracture-based path to substrate amortization, allowing device removal and substrate reuse, but the faceted surface generated in spalling of (100)-GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of (110)-oriented substrates takes advantage of the natural (110) cleavage plane in zinc-blende III-V materials, eliminating this faceting. The vast majority of III-V epitaxy development is on (100)-oriented substrates, but epitaxy is not limited to this orientation. Here, we demonstrate (110)-based GaAs solar cells grown by HVPE with equivalent performance to devices grown on the more standard (100) orientation. We also demonstrate spalling of (110) oriented substrates, revealing surfaces with flat terraces separated by steps. These results provide preliminary evidence of a potentially low-cost path for terrestrial III-V photovoltaics via the (110) substrate orientation.

(110) orientation↗
DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5×l0 15 cc -1 and external radiative efficiency of over 2 % in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

Munshi, Amit H.↗
DOE OSTI2022

Na Diffusion and Device Performance of AgBr Treated CuGaSe 2 Thin Films

Previous work demonstrated that uniform CuGaSe2 (CGS) thin films with large grains could be grown using a short AgBr vapor treatment during growth. Here, devices made with this treated CGS showed better performance compared to devices made with standard material. Here, it is shown that AgBr treated CGS device performance worsens over time and is attributed to the suppression of Na diffusion. A NaF post-deposition treatment is shown to effectively introduce Na into the AgBr treated CGS film and prevent device degradation.

14 SOLAR ENERGY↗
DOE OSTI2020

Characterizing the Stability of NISQ Devices

In this study, we focus on the question of stability of NISQ devices. The parameters that define the device stability profile are motivated by the work of DiVincenzo in [9] where the requirements for physical implementation of quantum computing are discussed. We develop the metrics and theoretical framework to quantify the DiVincenzo requirements and study the stability of those key metrics. The basis of our assessment is histogram similarity (in time and space). For identical experiments, devices which produce reproducible histograms in time, and similar histograms in space, are considered more reliable. To investigate such reliability concerns robustly, we propose a moment-based distance (MBD) metric. We illustrate our methodology using data collected from IBM's Yorktown device. Two types of assessments are discussed: spatial stability and temporal stability.

Dasgupta, Samudra↗
DOE OSTI2022

Adaptive stabilization of quantum circuits executed on unstable devices

Conventional computers have evolved to device components that demonstrate failure rates of 10 −17 or less, while current quantum computing devices typically exhibit error rates of 10 −2 or greater. This raises concerns about the reliability and reproducibility of the results obtained from quantum computers. The problem is highlighted by experimental observation that today’s NISQ devices are inherently unstable. Remote quantum cloud servers typically do not provide users with an ability to calibrate the device themselves. Using inaccurate characterization data for error mitigation can have devastating impact on reproducibility. In this study, we investigate if one can infer the critical channel parameters dynamically from the noisy binary output of the executed quantum circuit and use it to improve program stability. An open question however is how well does this methodology scale. We discuss the efficacy and efficiency of our adaptive algorithm using canonical quantum circuits such as the uniform superposition circuit. Our metric of performance is the Hellinger distance between the post-stabilization observations and the reference (ideal) distribution.

Dasgupta, Samudra↗
DOE OSTI2023

Reliable Devices Yield Stable Quantum Computations

Stable quantum computation requires noisy results to remain bounded even in the presence of noise fluctuations. Yet non-stationary noise processes lead to drift in the varying characteristics of a quantum device that can greatly influence the circuit outcomes. Here we address how temporal and spatial variations in noise relate device reliability to quantum computing stability. First, our approach quantifies the differences in statistical distributions of characterization metrics collected at different times and locations using Hellinger distance. We then validate an analytical bound that relates this distance directly to the stability of a computed expectation value. Our demonstration uses numerical simulations with models informed by the washington superconducting transmon device. We find that the stability metric is consistently bounded from above by the corresponding Hellinger distance, which can be cast as a specified tolerance level. These results underscore the significance of reliable quantum computing devices and the impact for stable quantum computation.

Dasgupta, Samudra↗
DOE OSTI2013

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A↗
DOE OSTI2017

Methodology for Wide Band-Gap Device Dynamic Characterization

Here, the double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V-I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method is proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V-I timing misalignment errors.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2018

Classification of Unintended Radiated Emissions in a Multi-Device Environment

Here, unintended radiated emissions (URE) from electronic devices are conducted on to the power infrastructure and can be collected and analyzed for non-intrusive load monitoring (NILM) applications. Dimensionally aligned signal projections (DASP) were previously introduced as specialized signal transforms to enable device classification using machine learning on statistical features derived from the DASP transforms. In this work, we explore multi-device classification which requires more sophisticated methods owing to the complexity of the feature space such as large dynamic range, non-contiguous features, over-lapping features, and nonlinear interactions of features. In particular, we introduce an additional DASP algorithm for increased resolution and sensitivity to intermodulation products and examine the utility of convolutional neural networks (CNNs) to extract and learn features directly from DASP images for classification of single and multiple device URE captures.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2011

Fabrication of fluidic devices with 30 nm nanochannels by direct imprinting

In this work, we propose an innovative approach to the fabrication of a complete micro/nano fluidic system, based on direct nanoimprint lithography. The fabricated device consists of nanochannels connected to U-shaped microchannels by triangular tapered inlets, and has four large reservoirs for liquid input. A master silicon stamp with the multilevel structures is fabricated first, and then a negative replica is made, to be used as a stamp for ultraviolet nanoimprint lithography (UV-NIL). Afterwards, just one single UV-NIL step is necessary for patterning all the the micro and nanostructures. Furthermore, the devices are made of all-transparent materials, and the method allows flexibility for the type of substrates used. The active material (an inorganic-organic hybrid polymer) used for the fabrication of the device has been carefully chosen, so it has adequate surface properties (inert and hydrophilic) for its direct use for biological applications. Devices having 30 nm wide, 30 nm deep nanochannels have been fabricated, and the successful performance of the fluidic system and the continuity of the nanochannels have been proven by flow tests.

42 ENGINEERING↗
DOE OSTI2013

Dry etching techniques for active devices based on hexagonal boron nitride epilayers

Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

36 MATERIALS SCIENCE↗