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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Overcoming Degradation Pathways to Achieve Stable Blue Perovskite Light-Emitting Diodes

Mixed halide (Br/Cl) perovskite nanocrystals (NCs) that represent an advanced blue emitter commonly suffer from spectral instability and poor lifespan; notably, the lack of understanding of the failure mechanisms of these devices has restricted the future progress. Here, we determine that the degradation of CsPbBr x Cl 3– x NCs containing blue light-emitting diodes (LEDs) is due to the combination of two effects. Cl – drift among adjoining NCs under an electric field is found to induce a Cl-deficient material region in multiple NC layers, which dominates the unstable electroluminescence and causes fast degradation in the corresponding devices. In comparison, the monolayer NC devices that feature restricted anion drift pathways exhibit better operational stability; however, excess hole injection is demonstrated to induce irreversible chlorine loss in NCs. Such a process that largely arises from electrochemical oxidation of Cl – initiates a mild device failure in operation of tens of minutes. Through revealing these mechanisms, we modulate the devices’ construction and operational conditions to achieve a longer lifespan.

14 SOLAR ENERGY↗
NASA NTRS1990

High power density dc/dc converter: Selection of converter topology

The work involved in the identification and selection of a suitable converter topology is described. Three new dc/dc converter topologies are proposed: Phase-Shifted Single Active Bridge DC/DC Converter; Single Phase Dual Active Bridges DC/DC Converter; and Three Phase Dual Active Bridges DC/DC Converter (Topology C). The salient features of these topologies are: (1) All are minimal in structure, i.e., each consists of an input and output bridge, input and output filter and a transformer, all components essential for a high power dc/dc conversion process; (2) All devices of both the bridges can operate under near zero-voltage conditions, making possible a reduction of device switching losses and hence, an increase in switching frequency; (3) All circuits operate at a constant frequency, thus simplifying the task of the magnetic and filter elements; (4) Since, the leakage inductance of the transformer is used as the main current transfer element, problems associated with the diode reverse recovery are eliminated. Also, this mode of operation allows easy paralleling of multiple modules for extending the power capacity of the system; (5) All circuits are least sensitive to parasitic impedances, infact the parasitics are efficently utilized; and (6) The soft switching transitions, result in low electromagnetic interference. A detailed analysis of each topology was carried out. Based on the analysis, the various device and component ratings for each topology operating at an optimum point, and under the given specifications, are tabulated and discussed.

Divan, Deepakraj M.↗
DOE OSTI2022

Automating Component-Level Stress Measurements for Inverter Reliability Estimation

In the near future, grid operators are expected to regularly use advanced distributed energy resource (DER) functions, defined in IEEE 1547-2018, to perform a range of grid-support operations. Many of these functions adjust the active and reactive power of the device through commanded or autonomous operating modes which induce new stresses on the power electronics components. In this work, an experimental and theoretical framework is introduced which couples laboratory-measured component stress with advanced inverter functionality and derives a reduction in useful lifetime based on an applicable reliability model. Multiple DER devices were instrumented to calculate the additional component stress under multiple reactive power setpoints to estimate associated DER lifetime reductions. A clear increase in switch loss was demonstrated as a function of irradiance level and power factor. This is replicated in the system-level efficiency measurements, although magnitudes were different—suggesting other loss mechanisms exist. Using an approximate Arrhenius thermal model for the switches, the experimental data indicate a lifetime reduction of 1.5% when operating the inverter at 0.85 PF—compared to unity PF—assuming the DER failure mechanism thermally driven within the H-bridge. If other failure mechanisms are discovered for a set of power electronics devices, this testing and calculation framework can easily be tailored to those failure mechanisms.

Flicker, Jack (ORCID:0000000212232154)↗
NASA NTRS1984

Si MOS devices at low temperatures

Low temperature operation of micron and submicron size Si MOSFETs (metal-oxide-semiconductor field-effect-transistors) results in their improved device characteristics. Various low temperature device properties such as increase in mobility, shift in the theshold voltage, increased reliability, etc., were considered. Other device characteristics such as the subthreshold behavior, delay times and miniaturization at low temperatures are discussed. Discussion includes presenting experimental results along with physical models explaining the observed effects.

Kamgar, A.↗
NASA NTRS1988

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗
NASA NTRS2001

Temperature Effects in Varactors and Multipliers

Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.

East, J.↗
NASA NTRS1984

Electronic 4-wheel drive control device

The internal rotation torque generated during operation of a 4-wheel drive vehicle is reduced using a control device whose clutch is attached to one part of the rear-wheel drive shaft. One torque sensor senses the drive torque associated with the rear wheel drive shaft. A second sensor senses the drive torque associated with the front wheel drive shaft. Revolution count sensors sense the revolutions of each drive shaft. By means of a microcomputer, the engagement of the clutch is changed to insure that the ratio of the torque sensors remains constant.

Hayato, S.↗
NASA NTRS2011

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.

Lauenstein, Jean-Marie↗
NASA NTRS2017

Aerosol Sampling Experiment on the International Space Station

The International Space Station (ISS) is a unique indoor environment which serves as both home and workplace to the astronaut crew. There is currently no particulate monitoring, although particulate matter requirements exist. An experiment to collect particles in the ISS cabin was conducted recently. Two different aerosol samplers were used for redundancy and to collect particles in two size ranges spanning from 10 nm to hundreds of micrometers. The Active Sampler is a battery operated thermophoretic sampler with an internal pump which draws in air and collects particles directly on a transmission electron microscope grid. This commercial-off-the-shelf device was modified for operation in low gravity. The Passive Sampler has five sampling surfaces which were exposed to air for different durations in order to collect at least one sample with an optimal quantity of particles for microscopy. These samples were returned to Earth for analysis with a variety of techniques to obtain long-term average concentrations and identify particle emission sources. Results are compared with the inventory of ISS aerosols which was created based on sparse data and the literature. The goal of the experiment is to obtain data on indoor aerosols on ISS for future particulate monitor design and development.

Aerosol↗
DOE OSTI2023

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

High temperature operation of wide bandgap devices continue to be a challenge for the power electronics packages. Thermal performance and reliability are important factors that determine the viability of a bonded interface for operation at high temperatures. In this presentation, we present the technical approach and key results from the research on sintered silver, transient liquid phase alloy, and polymeric materials. A lifetime prediction model that incorporates the thermomechanical behavior of sintered silver at 200C was developed. The copper-aluminum transient alloy completed 350 thermal cycles from -40C to 200C and little increase in the defect level was observed. In addition to material research, we initiated a time-series analysis on the scanning acoustic microscope images of eutectic solder to explore statistical forecasting methods and machine learning techniques. Initial results that report the accuracy of a few different statistical models are presented.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical-linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth-broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole-burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T-center frequency and a probe pulse to measure the frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time lead to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral-diffusion mechanism for T centers in devices and inform materials and feedback strategies for indistinguishable photon generation.

Zhang, Xueyue↗
DOE OSTI2026

FleetREDI Insight: Beverage Delivery in New York City

Capturing real-world data is critical to improving efficiency and supporting technology advancements in commercial vehicles. FleetREDI’s insights provide detailed duty cycle information and highlight unique aspects of the given dataset. Each insight delivers a quick look at the collected data by summarizing the operation and identifying key findings of the initial analysis. This FleetREDI insight explores beverage delivery tractors operating in New York City. Last-mile beverage delivery supports local bars and restaurants throughout Manhattan and the broader New York City area. Manhattan Beer Distributors is a beverage delivery company operating in Manhattan and the Bronx. Logging devices were installed in 17 vehicles, and operational data were collected between August and October 2022. Two types of vehicles were included in data collection: 7 tractors and 10 bay trucks. Using NLR’s FleetREDI data platform, this dataset provides a summary of daily operation to help understand duty cycle characteristics. This includes daily distance, fuel use, and estimated engine-produced energy consumption for 17 bay trucks and tractors that operated more than 7,500 miles in slow-speed urban operation. ![FleetREDI beverage delivery](FleetREDI-beverage-delivery-nyc.jpg)

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1979

Internal stress and degradation in short-wavelength AlGaAs double-heterojunction devices

Aging tests of incoherently operated zinc-doped double-heterojunction (DH) lasers designed for short-wavelength (0.71-0.72 micron) operation show that the introduction of buffer layers between the substrate and the DH structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.

Ladany, I.↗
NASA NTRS1988

Ammonia transfer across rotating joints in space

Thermal control of future large space facilities, such as the space station, will require the transfer of anhydrous ammonia across rotating joints with near zero leakage. Anhydrous ammonia is the primary heat transfer fluid aboard the station, providing critical thermal management of habitat and payload systems. The solar radiator joints, as well as the various payload pointing systems, are obvious examples of the need for a reliable fluid transfer device. Low weight, tight temperature control, low parasitic drag torque, long life, and high reliability, in addition to near zero leakage, are important characteristics necessary for the successful operation of such a device. In late 1986, Lockheed initiated a project to develop a Rotary Transfer Coupling (RTC) directed toward space station requirements. Fabrication and assembly of this device is now complete and testing is scheduled. The design and development of the face seal-type rotary fluid coupling that utilizes a unique cover gas concept (an inert gas such as nitrogen) to provide full containment of the ammonia was addressed.

Warner, Mark H.↗
NASA NTRS2005

Hydrogen-Oxygen PEM Regenerative Fuel Cell Development at the NASA Glenn Research Center

The closed-cycle hydrogen-oxygen PEM regenerative fuel cell (RFC) at the NASA Glenn Research Center has successfully demonstrated closed cycle operation at rated power for multiple charge-discharge cycles. During charge cycle the RFC has absorbed input electrical power simulating a solar day cycle ranging from zero to 15 kWe peak, and delivered steady 5 kWe output power for periods exceeding 8 hr. Orderly transitions from charge to discharge mode, and return to charging after full discharge, have been accomplished without incident. Continuing test operations focus on: (1) Increasing the number of contiguous uninterrupted charge discharge cycles; (2) Increasing the performance envelope boundaries; (3) Operating the RFC as an energy storage device on a regular basis; (4) Gaining operational experience leading to development of fully automated operation; and (5) Developing instrumentation and in situ fluid sampling strategies to monitor health and anticipate breakdowns.

Bents, David J.↗
NASA NTRS1973

Numerical interactive controller

Device allows interaction of operator with data in computer central processor in order to shift frame of data in Cartesian coordinates and slew desired data into view. ''Cursor generator program,'' in conjunction with device, provides light pen with sufficient resolving power to identify any particular set of coordinates with single-cell accuracy.

Brokl, S. S.↗
DOE OSTI2022

Compressing micro-operations in scheduler entries in a processor

An electronic device includes a processor having a micro-operation queue, multiple scheduler entries, and scheduler compression logic. When a pair of micro-operations in the micro-operation queue is compressible in accordance with one or more compressibility rules, the scheduler compression logic acquires the pair of micro-operations from the micro-operation queue and stores information from both micro-operations of the pair of micro-operations into different portions in a single scheduler entry. In this way, the scheduler compression logic compresses the pair of micro-operations into the single scheduler entry.

Boyer, Michael W.↗