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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

All a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-z) - YBa2Cu3O(7-y) Josephson devices operating at 80 K

The controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K have been demonstrated. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-y) - YBa2Cu3O(7-y) trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O(7-z) barrier layer. Critical current densities in excess of 10,000 A/sq cm have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.

Barner, J. B.↗
NASA NTRS1992

An overview of silicon carbide device technology

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

Neudeck, Philip G.↗
NASA NTRS1992

Development of A Non-Explosive Release Device for Aerospace Applications

A simple, non-explosive, high load-capacity release mechanism using shape memory alloy is currently being developed for space flight. This device, the Frangibolt, could replace most pyrotechnic devices in applications where the need for safety, reliability, non-destructive testing, and minimal mechanical shock is more crucial than the need for rapid actuation. Prototype hardware has been designed, tested, and proven in laboratory conditions. Operation and demonstration of these devices evidenced reliable and repeatable performance, clearly indicating that extensive testing for flight qualification is warranted. Here, the Frangibolt design is discussed, recent test results of laboratory units are described, and the work that must be performed in the upcoming months to qualify the device for aerospace applications is addressed.

John D Busch↗
NASA NTRS1992

Laboratory evaluation of two advanced suspension devices for ground vibration testing of large space structures

In order to provide the advanced suspension technology needed to allow ground test measurement of free-body modal parameters, two advanced suspension devices, one passive, the other active, are evaluated on the basis of laboratory testing of each device type with rigid and flexible payloads. Rigid-body tests show the basic behavior of the devices when they are uncoupled from a test article near their bandwidth. Flexible body tests show how suspension device dynamics couple with the dynamics of a representative large space structure. For the flexible body testing, targets for the free-body modal parameters are developed from test-verified analysis of the representative structure suspended in an orientation which is only mildly sensitive to suspension constraints.

Cooley, Victor M.↗
NASA NTRS1991

Development of exercise devices to minimize musculoskeletal and cardiovascular deconditioning in microgravity

The paper describes three exercise devices, developed at the NASA-Ames Research Center, for maintaining musculoskeletal and cardiovascular fitness in astronauts during extended space flights. These devices represent the following exercise concepts: (1) exercise against LBNP, (2) instrumented dynamic interlimb resistance, and (3) multiple resistive exercise. The three devices complement each other to provide the aerobic and strength training exercises for different situations. All three devices permit eccentric, concentric, and isometric contractions for a variety of exercises.

Schwandt, Douglas F.↗
NASA NTRS1993

Sandwich-Geometry YBa(2)Cu(3)O(7-delta)/Au/Nb SNS Devices

Superconductor/normal-conductor/superconductor (SNS) devices in which electronically active layers consist of high-temperature superconductor YBa(2)Cu(3)O(7-delta), normal conductor Au, and conventional superconductor Nb, fabricated in sandwich geometry. Devices and processes by which fabricated are part of continuing effort to develop SNS microbridges for use in superconducting quantum interference devices (SQUIDS's) or as mixers or local oscillators operating at frequencies of hundreds of gigahertz. Results show promise for manufacture of practical devices.

Foote, Marc C.↗
NASA NTRS1992

Formal mechanization of device interactions with a process algebra

The principle emphasis is to develop a methodology to formally verify correct synchronization communication of devices in a composed hardware system. Previous system integration efforts have focused on vertical integration of one layer on top of another. This task examines 'horizontal' integration of peer devices. To formally reason about communication, we mechanize a process algebra in the Higher Order Logic (HOL) theorem proving system. Using this formalization we show how four types of device interactions can be represented and verified to behave as specified. The report also describes the specification of a system consisting of an AVM-1 microprocessor and a memory management unit which were verified in previous work. A proof of correct communication is presented, and the extensions to the system specification to add a direct memory device are discussed.

Schubert, E. Thomas↗
NASA NTRS1992

Conceptual design of a fleet of autonomous regolith throwing devices for radiation shielding of lunar habitats

The National Aeronautics and Space Administration (NASA) in conjunction with Universities Space Research Association (USRA) has requested that the feasibility of a fleet of regolith tossing devices designed to cover a lunar habitat for radiation protection be demonstrated. The regolith, or lunar soil, protects the lunar habitat and its inhabitants from radiation. Ideally, the device will operate autonomously in the lunar environment. To prove the feasibility of throwing regolith on the Moon, throwing solutions were compared to traditional, Earth-based methods for moving soil. Various throwing configurations were investigated. A linear throwing motion combined with a spring and motor energizing system proved a superior solution. Three different overall configurations for the lunar device are presented. A single configuration is chosen and critical parameters such as operating procedure, system volume, mass, and power are developed. The report is divided into seven main sections. First, the Introduction section gives background information, defines the project requirements and the design criteria, and presents the methodology used for the completion of this design. Next, the Preliminary Analysis section presents background information on characteristics of lunar habitats and the lunar environment. Then, the Alternate Designs section presents alternate solutions to each of the critical functions of the device. Fourth, a detailed analysis of throwing the regolith is done to demonstrate its feasibility. Then, the three overall design configurations are presented. Next, a configuration is selected and the conceptual design is expanded to include system performance characteristics, size, and mass. Finally, the Conclusions and Recommendations for Future Work section evaluates the design, outlines the next step to be taken in the design process, and suggests possible goals for future design work.

Armstrong, Karem↗
NASA NTRS1993

Advanced underwater lift device

Flexible underwater lift devices ('lift bags') are used in underwater operations to provide buoyancy to submerged objects. Commercially available designs are heavy, bulky, and awkward to handle, and thus are limited in size and useful lifting capacity. An underwater lift device having less than 20 percent of the bulk and less than 10 percent of the weight of commercially available models was developed. The design features a dual membrane envelope, a nearly homogeneous envelope membrane stress distribution, and a minimum surface-to-volume ratio. A proof-of-concept model of 50 kg capacity was built and tested. Originally designed to provide buoyancy to mock-ups submerged in NASA's weightlessness simulators, the device may have application to water-landed spacecraft which must deploy flotation upon impact, and where launch weight and volume penalties are significant. The device may also be useful for the automated recovery of ocean floor probes or in marine salvage applications.

Flanagan, David T.↗
NASA NTRS1992

Observation of radiation induced changes in stress and electrical properties in MOS devices

Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.

Shaw, D. C.↗
NASA NTRS1993

Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

Burns, M. J.↗
NASA NTRS1992

CCDs and photon counting devices: Applications in space and from the ground

The development of the 2048 by 2048 CCD (Charge Coupled Device) for a second generation space telescope instrument has resulted in devices with very few defects, dark currents of less than 12 electrons/pixel/hour at -80 deg, readout noise levels of less than 4 electrons rms, and excellent charge transfer efficiency at signal levels of less than 10 electrons. A second generation of devices that capitalize on these characteristics have been produced and are currently in test. Faster frame transfer devices that preserve these characteristics have been designed that include tridirectional taps in the serial register. The state of the art in CCD's as photon counting detectors is reviewed.

Delamere, W. A.↗
NASA NTRS1994

Silicon device performance measurements to support temperature range enhancement

Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.

Bromstead, James↗
NASA NTRS1994

Flexible manufacturing for photonics device assembly

The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

Lu, Shin-Yee↗
NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1991

Implementation of a three degree of freedom, motor/brake hybrid force output device for virtual environment control tasks

The advent of high resolution, physical model based computer graphics has left a gap in the design of input/output technology appropriate for interacting with such complex virtual world models. Since virtual worlds consist of physical models, it is appropriate to output the inherent force information necessary for the simulation to the user. The detailed design, construction, and control of a three degree freedom force output joystick will be presented. A novel kinematic design allows all three axes to be uncoupled, so that the system inertia matrix is diagonal. The two planar axes are actuated through an offset gimbal, and the third through a sleeved cable. To compensate for friction and inertia effects, this transmission is controlled by a force feedforward and a closed force feedback proportional loop. Workspace volume is a cone of 512 cubic inches, and the device bandwidth is maximized at 60 Hz for the two planar and 30 Hz for the third axis. Each axis is controlled by a motor/proportional magnetic particle brake combination fixed to the base. The innovative use of motors and brakes allows objects with high resistive torque requirements to be simulated without the stability and related safety issues involved with high torque, energy storing motors alone. Position, velocity, and applied endpoint force are sensed directly. Different control strategies are discussed and implemented, with an emphasis on how virtual environment force information, generated by the MIT Media Lab Computer Graphics and Animation Group BOLIO system, is transmitted to the device controller. The design constraints for a kinesthetic force feedback device can be summarized as: How can the symbiosis between the sense of presence in the virtual environment be maximized without compromising the interaction task under the constraints of the mechanical device limitations? Research in this field will yield insights to the optimal human sensory feedback mix for a wide spectrum of control and interaction problems. A flexible research tool that is designed as an easily reproducible product prototype has been constructed to explore the variety of possible force interaction.

Russo, Massimo↗
NASA NTRS1994

InGaAs PV device development for TPV power systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1995

Device Would Provide Controllable Buoyancy

Proposed buoyant device attaches to object denser than water and adjusts to obtain neutral overall buoyancy. Conceived to aid training astronauts in handling "weightless" equipment in water tanks. Could be used to support marine environmental monitoring instrument at fixed predetermined depth. In marine salvage operation it holds parts at convenient depth before used or hoisted to surface. Device made in variety of sizes and shapes to suit objects to be supported. Could be equipped with such suitable attachment hardware as U-bolts, clamps, or cable ties. One or more such devices used to support object as necessary. Replaces plastic foam floats, which must be cut to size according to estimates of volume of foam that gives required amount of buoyancy. Device does not become waterlogged or release contaminating particles.

Macmartin, Malcolm J.↗