Magnetic or integrated circuits - A comparative analysis of their application to a micrometeoroid sensor scanning program
Applicability of magnetic or integrated circuits to micrometeoroid sensor scanning
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Applicability of magnetic or integrated circuits to micrometeoroid sensor scanning
A Solder Committee designated to investigate a solder cracking phenomena occurring on the SATURN electrical/electronic hardware found the cause to be induced stress in the soldered connections rather than faulty soldering techniques. The design of the printed circuit (PC) board assemblies did not allow for thermal expansion of the boards that occurred during normal operation. The difference between the thermal expansion properties of the boards and component lead materials caused stress and cracking in the soldered connections. The failure mechanism and various PC boards component mounting configurations are examined in this report. Effective rework techniques using flanged tubelets, copper tubelets, and soft copper wiring are detailed. Future design considerations to provide adequate strain relief in mounting configurations are included to ensure successful solder terminations.
Design and fabrication of low power monolithic integrated circuit able to perform 10-bit counter/shift register function
Stencil screening methods for printing integrated circuit patterns for resistors, capacitors, etc, discussing automation possibilities
Abstract Non‐fullerene acceptors (NFAs) as used in state‐of‐the‐art organic solar cells feature highly crystalline layers that go along with low energetic disorder. Here, the crucial role of energetic disorder in blends of the donor polymer PM6 with two Y‐series NFAs, Y6, and N4 is studied. By performing temperature‐dependent charge transport and recombination studies, a consistent picture of the shape of the density of state distributions for free charges in the two blends is developed, allowing an analytical description of the dependence of the open‐circuit voltage V OC on temperature and illumination intensity. Disorder is found to influence the value of the V OC at room temperature, but also its progression with temperature. Here, the PM6:Y6 blend benefits substantially from its narrower state distributions. The analysis also shows that the energy of the equilibrated free charge population is well below the energy of the NFA singlet excitons for both blends and possibly below the energy of the populated charge transfer manifold, indicating a down‐hill driving force for free charge formation. It is concluded that energetic disorder of charge‐separated states has to be considered in the analysis of the photovoltaic properties, even for the more ordered PM6:Y6 blend.
Abstract Implementations of neurons, delays, and synapse circuits are presented with simulations. These neural elements are used to create two small spiking neural networks, the Rate-Window and Order-Biased clusters, which are capable of detecting simple two-spike spatiotemporal patterns. A simple pattern detecting network (SPDN) is created by combining the Rate-Window and Order-Biased clusters, where clusters are small spiking neural networks, and its simple pattern detection ability is demonstrated in simulation. The SPDN is used to implement a complex pattern detecting network (CPDN) and its complex pattern detection ability is demonstrated in simulation. Methods for generating arbitrary spatiotemporal patterns are presented. The CPDN and spatiotemporal pattern generation methods are then used to implement a novel spatiotemporal computing paradigm based on detecting and responding to spatiotemporal symbols. A simulation of a spatiotemporal half adder is presented to demonstrate the computing paradigm.
Over the past five years (June 2017-current), the vertical electric field (E z ) as well as numerous cloud, precipitation and radiation properties have been monitored at the Department of Energy-Atmospheric Radiation Measurement (DOE ARM) North Slope of Alaska (NSA) field site. Comparisons between the composite diurnal averaged fair-weather E z , and composite ceilometer derived cloud base height during the polar night, reveal a significant correlation between the parameters (r = 0.62), supporting previous studies that there is high correlation between local electric field and cloud properties. With the use of extensive instrumentation at the site, such as the Micro Pulse Lidar (MPL), Ka-band Zenith Radar (KAZR), ceilometer, SKYRAD, Precipitation Imaging Package (PIP), among others, this study provides a more comprehensive examination of the diurnal cycle of cloud and precipitation properties along with the localized fair-weather return current of the larger Global Electric Circuit (GEC) system. Comparisons between the composite diurnal averaged fair-weather E z , and cloud thickness, maximum column backscatter, and precipitation particle counts all show similar diurnal variability during the polar night, indicating that during the largest magnitude fair weather E z time periods, clouds bases tend to be higher, clouds are thicker, have a larger column backscatter, and display more precipitating particles. Furthermore, a slight diurnal variability in the polar night surface temperature was found to be highly correlated (r = 0.87) to the longwave downwelling irradiance measured by SKYRAD, indicating that the variations in the physical properties of local clouds could modulate the diurnal polar night surface temperature variability on the order of 0.5 °C/day. In conclusion, these findings emphasize the importance and global nature of the GEC system, with the global aggregate of thunderstorms and electrified clouds potentially influencing polar night cloud properties as well as diurnal wintertime polar surface temperature variation.
Electromechanical structural integrity and thermal stability dictate the safety performance of lithium-ion batteries. Progressive deformation and failure across microscopic and macroscopic lengths scales that are responsible for internal short circuit (ISC) in lithium-ion cells under mechanical abuse conditions remains elusive. In this study, a series of indentation tests were conducted on lithium-ion cells with different capacities up to the occurrence of ISC. The external response and internal configuration of these cells were investigated. It is discovered that cells with different capacities and state of charges exhibited different behaviors. Maximum temperature, which is often regarded as the most important parameter related to thermal runaway (TR), varied considerably due to the complicated contact configurations. X-ray computed tomography (XCT) showed that ISC was a collective result of shear band or other strain-localization modes in the electrode assembly, shear offsets in the granular coatings of electrodes, and the accompanying ductile fracture in the metal foils. We believe that the irregular strain-localization modes (kinks, cusps, and buckles), radical mismatches in mechanical properties of different layers, and geometric features of the indenter eventually lead to the tearing/puncture of cell separator at various locations. Furthermore, the results could provide useful guidance for the micromechanical modeling of lithium-ion cells.
Integrated circuits (ICs) are the fundamental microelectronic building blocks of typical information and communication technology (ICT) devices such as laptops and smartphone. With the emergence of faster and cheaper low-power ICs for the growing ICT market, there is a limited information on their manufacturing energy and economic impacts owing to the lack of recurrent upgradation of proprietary IC manufacturing process data. In this work, economic and life cycle energy assessments (LCAs) of IC manufacturing and assembly processes were conducted using the latest bill of materials (BOM) manufacturing data in a state-of-the-art IC manufacturing cost software tool developed by IC Knowledge, LLC. IC manufacturing cost was estimated to be $\$$1.00-$\$$5.00/cm 2 ; the high-end cost represents the most advanced 3D NAND IC technology with the Wafer Level Chip Scale Package cost of $4/cm 2 . Total cumulative energy demand (CED) estimates of IC manufacturing using the OpenLCA software ranged from 9 to 38 MJ/cm 2 or 56–235 BJ/month with the largest share (~ 75%) from on-site energy. The IC manufacturing CED is projected to increase with the progress in IC technology node, which has increased by more than two times for technology node evolution from 110 to 14 nm. Furthermore, the representative detailed BOM data were considered to reduce the CED uncertainties of the estimated standard deviation of 35%- 42%.
Eco-friendly solution processing and the low-cost synthesis of photoactive materials are important requirements for the commercialization of organic solar cells (OSCs). Although varieties of aqueous-soluble acceptors have been developed, the availability of aqueous-processable polymer donors remains quite limited. In particular, the generally shallow highest occupied molecular orbital (HOMO) energy levels of existing polymer donors limit further increases in the power conversion efficiency (PCE). Here, we design and synthesize two water/alcohol-processable polymer donors, poly[(thiophene-2,5-diyl)-alt-(2-((13-(2,5,8,11-tetraoxadodecyl)-2,5,8,11-tetraoxatetradecan-14-yl)oxy)-6,7-difluoroquinoxaline-5,8-diyl)] (P(Qx8O-T)) and poly[(selenophene-2,5-diyl)-alt-(2-((13-(2,5,8,11-tetraoxadodecyl)-2,5,8,11-tetraoxatetradecan-14-yl)oxy)-6,7-difluoroquinoxaline-5,8-diyl)] (P(Qx8O-Se)) with oligo(ethylene glycol) (OEG) side chains, having deep HOMO energy levels (~–5.4 eV). The synthesis of the polymers is achieved in a few synthetic and purification steps at reduced cost. The theoretical calculations uncover that the dielectric environmental variations are responsible for the observed band gap lowering in OEG-based polymers compared to their alkylated counterparts. Notably, the aqueous-processed all-polymer solar cells (aq-APSCs) based on P(Qx8O-T) and poly[(N,N'-bis(3-(2-(2-(2-methoxyethoxy)-ethoxy)ethoxy)-2-((2-(2-(2-methoxyethoxy)ethoxy)ethoxy)-methyl)propyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl)-alt-(2,5-thiophene)] (P(NDIDEG-T)) active layer exhibit a PCE of 2.27% and high open-circuit voltage (V OC ) approaching 0.8 V, which are among the highest values for aq-APSCs reported to date. This study provides important clues for the design of low-cost, aqueous-processable polymer donors and the fabrication of aqueous-processable OSCs with high V OC .
Responses of the AC and DC global electric circuits (GECs) to the large eruption of the Hunga Tonga-Hunga Ha'apai (HT-HH) volcano on 15 January 2022 are discussed. The AC-related investigation is based on Schumann resonance (SR) measurements from six stations on four continents. The DC-related investigation utilizes atmospheric electric field (potential gradient, PG) measurements from six recording stations in Europe and the USA. According to data from the GLD360 and WWLLN lightning detection networks, the peak lightning stroke rate, 83/s, was dominated by negative polarity lightning, but the distributions of positive and negative lightning discharges in latitude and longitude around the volcano differed. A global intensification of SR is apparent in connection with the enhanced lightning activity caused by the eruption. SR data-based results confirm that the lightning activity in the eruption dominated the naturally occurring global activity for a period of about 1 hr. The highly localized increase in lightning activity over HT-HH was a unique point source of SR excitation. PG measurements suggest that impulse-like charging of the DC GEC, by ~15%, via negative cloud-to-ground lightning strokes took place twice during the eruption. A time constant of 7 or 8 min has been inferred for near-surface PG changes due to these enhancements. This could be the first direct measurement of the time constant of the GEC near the Earth's surface, as well as the first observation of the direct charging of the DC GEC by a unique atmospheric electrified source.
Dynamic, multi-input gene regulatory networks (GRNs) are ubiquitous in nature. Multilayer CRISPR-based genetic circuits hold great promise for building GRNs akin to those found in naturally occurring biological systems. We develop an approach for creating high-performing activatable promoters that can be assembled into deep, wide, and multi-input CRISPR-activation and -interference (CRISPRa/i) GRNs. By integrating sequence-based design and in vivo screening, we engineer activatable promoters that achieve up to 1,000-fold dynamic range in an Escherichia coli-based cell-free system. These components enable CRISPRa GRNs that are six layers deep and four branches wide. We show the generalizability of the promoter engineering workflow by improving the dynamic range of the light-dependent EL222 optogenetic system from 6-fold to 34-fold. Additionally, high dynamic range promoters enable CRISPRa systems mediated by small molecules and protein–protein interactions. We apply these tools to build input-responsive CRISPRa/i GRNs, including feedback loops, logic gates, multilayer cascades, and dynamic pulse modulators. Our work provides a generalizable approach for the design of high dynamic range activatable promoters and enables classes of gene regulatory functions in cell-free systems.
Non-equilibrium plasma discharges in spark gaps have been an increasingly studied method for alleviating cycle to cycle variation in lean and dilute combustion environments. However, ignition models that account for streamer propagation, cathode fall, and transmission line amplification over nanosecond time scales have so far not been developed. The present study develops such a model, with emphasis on the energy delivered from circuit to cylinder. Here, key pieces of the relevant physics and chemistry are summarized, simplified, and systematically coupled to one another. The set of parameters is limited to a handful of key observables and modeled using Modelica. Results show non-trivial behavior in the energy delivery characteristics of such discharges with important implications for ignition.
Here, we consider the Bose–Hubbard model in two and three spatial dimensions and numerically compute the quantum circuit complexity of the ground state in the Mott insulator and superfluid phases using a mean field approximation with additional quadratic fluctuations. After mapping to a qubit system, the result is given by the complexity associated with a Bogoliubov transformation applied to the reference state taken to be the mean field ground state. In particular, the complexity has peaks at the O(2) critical points where the system can be described by a relativistic quantum field theory. Given that we use a Gaussian approximation, near criticality the numerical results agree with a free field theory calculation. To go beyond the Gaussian approximation we use general scaling arguments that imply that, as we approach the critical point t → t c , there is a non-analytic behavior in the complexity c 2 (t) of the form |c 2 (t) – c 2 (t c )| ~ |t – t c | νd , up to possible logarithmic corrections. Here d is the number of spatial dimensions and ν is the usual critical exponent for the correlation length ξ ~ |t – t c | –ν . As a check, for d = 2 this agrees with the numerical computation if we use the Gaussian critical exponent $v=\frac{1}{2}$. Finally, using AdS/CFT methods, we study higher dimensional examples and confirm this scaling argument with non-Gaussian exponent ν for strongly interacting theories that have a gravity dual.
We explore the utility of qutrits and qubits for simulating the flavor dynamics of dense neutrino systems. The evolution of such systems impacts some important astrophysical processes, such as core-collapse supernovae and the nucleosynthesis of heavy nuclei. Many-body simulations require classical resources beyond current computing capabilities for physically relevant system sizes. Quantum computers are therefore a promising candidate to efficiently simulate the many-body dynamics of collective neutrino oscillations. Previous quantum simulation efforts have primarily focused on properties of the two-flavor approximation due to their direct mapping to qubits. Furthermore, we present new quantum circuits for simulating three-flavor neutrino systems on qutrit- and qubit-based platforms, and demonstrate their feasibility by simulating systems of two, four, and eight neutrinos on IBM and Quantinuum quantum computers.
This article introduces a 4 kV/120 A solid-state dc circuit breaker (DCCB) based on discrete SiC mosfets. The DCCB is designed in a five-layer tower structure. Each layer consists of a circular main conduction branch and an attached gate driver. There are two primary benefits of the proposed DCCB. First, it reduces conduction loss with multiple devices in parallel. Second, it achieves an ultrafast response speed with SiC mosfets. Moreover, the gate drivers of the DCCB are powered by a domino inductive power transfer (IPT) system. It achieves the load-independent constant-voltage output characteristics, which means the outputs are immune to load variations. Additionally, an IPT system prototype is implemented to test the power transfer performance. At 500-kHz frequency, the total output power reaches 15.73 W, which is sufficient to power on five gate drivers, with a peak transfer efficiency of 75.4%. The IPT system is tested to power a 4 kV/120 A DCCB prototype. It validates that the DCCB is effective to turn off 120 A current within 3.5 μs.
Paralleled dies in a power module could have instability issues during high current switching transients. Here, the instability is caused by the differential-mode oscillation among paralleled MOSFETs. Conventional analyses of paralleled MOSFETs’ stability are normally limited to a single operating point, which ignores the influences of the switching trajectory and nonlinear device parameters on stability. This article reveals that the switching trajectory can significantly influence parallel stability. The analysis is improved by solving eigenvalues of state-space modeling system matrices of all operating points that the switching trajectory goes through considering nonlinear device parameters. Higher voltage and current stresses result in greater real parts of complex eigenvalues, which explains why the paralleled MOSFETs are more unstable with higher voltage and current stresses. To improve stability in solid-state circuit breaker applications, we propose a method to manipulate the switching trajectory to avoid the unstable region where the conventional hard switching trajectory normally goes through. Experimental results show that the turn- off current capability can be increased from ~five times of rated current with the gate oscillation using the conventional turn- off trajectory to ~ten times of rated current without the gate oscillation using the optimal turn- off trajectory.
This letter proposes a novel single passive gate driver solution based on passive devices to control series-connected power semiconductor devices for dc circuit breaker (DCCB) applications. The transient suppression devices (e.g., metal oxide varistors) are utilized to achieve natural voltage balancing among the series devices, while providing the discharge path of the gate capacitor of the upper devices. Here, the proposed method is very simple, cost effective and more compact compared with conventional voltage balancing method-based DCCBs. Besides, gate voltage oscillation during the voltage recovery process is mitigated by the addition of an extra gate capacitor. Simulation and experimental results are provided to verify the effectiveness of proposed method.