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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction

Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diode is potential for applications of portable UV detectors without driving power.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Exchange bias effect in epitaxial La{sub 0.67}Ca{sub 0.33}MnO{sub 3}/SrMnO{sub 3} thin film structure

Bilayers consisting of La{sub 0.67}Ca{sub 0.33}MnO{sub 3} (LCMO) and SrMnO{sub 3} (SMO) have been prepared by pulsed-laser deposition on SrTiO{sub 3} (001) substrates. Unconventional magnetic coupling was found after cooling in a small field. The LCMO/SMO bilayers exhibit an exchange bias field of 209 Oe, which vanishes as the temperature rises above 90 K. A small magnetization has been found above the Curie temperature of the pure LCMO thin films. Spin-cluster-like antiferromagnetic (AFM)/ferromagnetic (FM) clusters have been deduced to exist at the interface due to the competing types of magnetic order at the interface. The magnetic relaxation is found to follow a double-exponential equation and a slow relaxation process is observed due to the strong exchange coupling between AFM/FM clusters and the LCMO layer. We speculate that the short-range high-temperature FM order of the Mn{sup 3+} and Mn{sup 4+} moments above the Curie temperature at the interface gives rise to the magnetic regions that pin the FM LCMO layer as the temperature decreases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Tunable exchange bias-like effect in patterned hard-soft two-dimensional lateral composites with perpendicular magnetic anisotropy

Patterned hard-soft 2D magnetic lateral composites have been fabricated by e-beam lithography plus dry etching techniques on sputter-deposited NdCo{sub 5} thin films with perpendicular magnetic anisotropy. Their magnetic behavior is strongly thickness dependent due to the interplay between out-of-plane anisotropy and magnetostatic energy. Thus, the spatial modulation of thicknesses leads to an exchange coupled system with hard/soft magnetic regions in which rotatable anisotropy of the thicker elements provides an extra tool to design the global magnetic behavior of the patterned lateral composite. Kerr microscopy studies (domain imaging and magneto-optical Kerr effect magnetometry) reveal that the resulting hysteresis loops exhibit a tunable exchange bias-like shift that can be switched on/off by the applied magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ferroic characterizations, phase transformation, and internal bias field in 0.75Pb(Fe{sub 2/3}W{sub 1/3})O{sub 3}–0.25PbTiO{sub 3} multiferroic ceramic

The complex perovskite of 0.75Pb(Fe{sub 2/3}W{sub 1/3})O{sub 3}–0.25PbTiO{sub 3} (0.75PFW-0.25PT) ceramic was prepared by the conventional oxide mixing method. The detailed microstructure of 0.75PFW-0.25PT ceramic was investigated. At room temperature, the TEM analysis reveals that only cubic structure (nonpolar) exists, which is different from the phase coexistence of cubic (66%) and tetragonal (34%) structure revealed by XRD. A mechanism dominated by a temperature rise due to electron-beam irradiation has been proposed. The XPS measurement confirms the mixed balance state of Fe{sup 2+} and Fe{sup 3+} in the as-prepared 0.75PFW-0.25PT specimen, which facilitates the formation of the defect dipoles with oxygen vacancies, in turn resulting in the internal-bias field (E{sub i}) phenomenon. The appearance of weak magnetic interactions is believed relating to the presence of noncompensated magnetic moments in Fe-rich islands. These results provide key information for understanding the composition, defect, ferroelectric, and ferromagnetic properties in 0.75PFW-0.25PT ceramic.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Temperature and bias-voltage dependence of atomic-layer-deposited HfO{sub 2}-based magnetic tunnel junctions

Magnetic tunnel junctions with HfO{sub 2} tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Tip-contact related low-bias negative differential resistance and rectifying effects in benzene–porphyrin–benzene molecular junctions

The electronic transport properties of benzene–porphyrin–benzene (BPB) molecules coupled to gold (Au) electrodes were investigated. By successively removing the front-end Au atoms, several BPB junctions with different molecule-electrode contact symmetries were constructed. The calculated current–voltage (I–V) curves depended strongly on the contact configurations between the BPB molecules and the Au electrodes. In particular, a significant low-voltage negative differential resistance effect appeared at −0.3 V in the junctions with pyramidal electrodes on both sides. Along with the breaking of this tip-contact symmetry, the low-bias negative differential resistance effect gradually disappeared. This tip-contact may be ideal for use in the design of future molecular devices because of its similarity with experimental processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors are investigated. The gate leakage current decreases significantly upon removing the SiN layer and no clear critical voltage for the sudden degradation of the gate leakage current can be observed in the reverse-bias step-stress experiments. Gate-lag measurements reveal the decrease of the fast-state surface traps and the increase of slow-state traps after the passivation layer removal. It is postulated that consistent surface charging relieves the electric field peak on the gate edge, thus the inverse piezoelectric effect is shielded.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Griffiths phase, spin-phonon coupling, and exchange bias effect in double perovskite Pr{sub 2}CoMnO{sub 6}

The ceramic Pr{sub 2}CoMnO{sub 6} of double perovskite structure is prepared by a solid-state reaction and the magnetic properties, phonon behaviors are studied in detail. Two ferromagnetic transitions at T{sub C1} ∼ 172 K and T{sub C2} ∼ 140 K are observed in the temperature-dependent magnetization curves, respectively. Furthermore, a detail analysis on the magnetic susceptibility reveals that a short-range ferromagnetic clustered state exists above T{sub C1}, which can be well described as the Griffiths phase with a well-defined Griffiths temperature T{sub G} ∼ 210 K. The presence of the B-site antisite defects is considered to contribute to the observed Griffiths singularity. Temperature-dependent Raman scattering experiment reveals an obvious softening of the phonon mode involving stretching vibrations of the (Co/Mn)O{sub 6} octahedra in FM temperature regions, indicating a close correlation between magnetism and lattice in Pr{sub 2}CoMnO{sub 6}. On the other hand, it is found that the phonon softening extends up to T{sub G}, which further confirms the preformation of the short-range ferromagnetic clusters up to T{sub G}. Moreover, the field-cooling magnetic hysteresis loop reveals that exchange bias phenomena is present, which is supposed to origin from the exchange coupling between Co/Mn ordered ferromagnetic phases with antiferromagnetic antiphase boundaries caused by the partially Co/Mn antisite disorders. These findings give a systematic understanding on the magnetic interaction in Pr{sub 2}CoMnO{sub 6} which is closely related to the lattice and atomic distribution, and add special interest for application of this material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Exchange bias effect in Bi{sub 2}Fe{sub 3}AlO{sub 9} ceramics

The exchange bias (EB) effect is observed in Bi{sub 2}Fe{sub 3}AlO{sub 9} polycrystalline ceramics. The EB field (H{sub EB}), vertical magnetization shift, and coercive field show a strong dependence on the cooling fields. When a larger applied field is used to measure the hysteresis loop, the EB effect is suppressed. The induced spin-glass-like phase via Al{sup 3+} doping is responsible for the EB effect below the spin-glass temperature (T{sub SG}) of ∼25 K. Moreover, the H{sub EB} varies nonmonotonically with temperature above T{sub SG}, which is interpreted using a random field model with the exchange coupling between ferromagnetic clusters and an antiferromagnetic phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

How the “main condition” of phase stability can explain the effect of the velocity deviation of secondary electrons in DC-biased single-sided multipactors

In this work, a “main condition” for phase stability has been employed to investigate the effects of the velocity deviation of the electrons in DC-biased single-sided multipactors (MPs). In a previous study [M. Mostajeran, Phys. Plasmas 21, 053108 (2014)], a stability equation was derived, where the secondary electron was assumed to have zero initial velocity and the phase deviation from the resonant phase was considered. In this work, both deviations in phase and velocity from the resonant condition are taken into account, assuming nonzero initial velocity for the secondary electrons. Using the main condition for stability, it is shown that MP discharge can rise in situations, where large velocity deviations from initial velocity and large phase deviations from resonant phase exist. This is contrary to what can be predicted on the basis of the “simple stability condition.” This result is further confirmed by numerical simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Positive exchange bias observed in Pt-inserted Cr{sub 2}O{sub 3}/Co exchange coupled bilayers

We investigated the effect of Pt insertion on a Cr{sub 2}O{sub 3}/Co exchange coupling system. The perpendicular exchange bias μ{sub 0}H{sub ex} decreased with increasing Pt insertion layer thickness, and we observed positive μ{sub 0}H{sub ex} for samples with relatively thick Pt insertion layers. We also examined the cooling field μ{sub 0}H{sub fc} dependence of μ{sub 0}H{sub ex} for the samples. At small μ{sub 0}H{sub fc}, all samples exhibited negative μ{sub 0}H{sub ex}. With increasing μ{sub 0}H{sub fc}, a shift of μ{sub 0}H{sub ex} from negative to positive was observed. In the past, similar behaviors were observed for FeF{sub 2}/Fe systems exhibiting positive μ{sub 0}H{sub ex}. In addition, the μ{sub 0}H{sub fc} dependence of μ{sub 0}H{sub ex} was well fitted by an equation taking into account the Zeeman energy at the surface of an antiferromagnet as well as an antiferromagnetic exchange coupling. The results strongly suggest that (1) Cr{sub 2}O{sub 3} surface spin is affected by the external magnetic field and (2) the coupling at the Cr{sub 2}O{sub 3}/Pt/Co interface is antiferromagnetic.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Development of a broadband reflective T-filter for voltage biasing high-Q superconducting microwave cavities

We present the design of a reflective stop-band filter based on quasi-lumped elements that can be utilized to introduce large dc and low-frequency voltage biases into a low-loss superconducting coplanar waveguide (CPW) cavity. Transmission measurements of the filter are seen to be in good agreement with simulations and demonstrate insertion losses greater than 20 dB in the range of 3–10 GHz. Moreover, transmission measurements of the CPW's fundamental mode demonstrate that loaded quality factors exceeding 10{sup 5} can be achieved with this design for dc voltages as large as 20 V and for the cavity operated in the single-photon regime. This makes the design suitable for use in a number of applications including qubit-coupled mechanical systems and circuit QED.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

A new configurational bias scheme for sampling supramolecular structures

We present a new simulation scheme which allows an efficient sampling of reconfigurable supramolecular structures made of polymeric constructs functionalized by reactive binding sites. The algorithm is based on the configurational bias scheme of Siepmann and Frenkel and is powered by the possibility of changing the topology of the supramolecular network by a non-local Monte Carlo algorithm. Such a plan is accomplished by a multi-scale modelling that merges coarse-grained simulations, describing the typical polymer conformations, with experimental results accounting for free energy terms involved in the reactions of the active sites. We test the new algorithm for a system of DNA coated colloids for which we compute the hybridisation free energy cost associated to the binding of tethered single stranded DNAs terminated by short sequences of complementary nucleotides. In order to demonstrate the versatility of our method, we also consider polymers functionalized by receptors that bind a surface decorated by ligands. In particular, we compute the density of states of adsorbed polymers as a function of the number of ligand–receptor complexes formed. Such a quantity can be used to study the conformational properties of adsorbed polymers useful when engineering adsorption with tailored properties. We successfully compare the results with the predictions of a mean field theory. We believe that the proposed method will be a useful tool to investigate supramolecular structures resulting from direct interactions between functionalized polymers for which efficient numerical methodologies of investigation are still lacking.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Self-biased large magnetoelectric coupling in co-sintered Bi{sub 0.5}Na{sub 0.5}TiO{sub 3} based piezoelectric and CoFe{sub 2}O{sub 4} based magnetostrictive bilayered composite

In this work, magnetoelectric properties of a co-sintered bilayered composite of non-lead based piezoelectric 0.97(Bi{sub 0.5}Na{sub 0.5}TiO{sub 3})–0.03(K{sub 0.47}Na{sub 0.47}Li{sub 0.06}Nb{sub 0.74}Sb{sub 0.06}Ta{sub 0.2}O{sub 3}) and magnetostrictive Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} are presented. Similar optimal sintering conditions of the individual components lead to a very clean interface as evidenced in the scanning electron microscopy, angle dispersive X-ray diffraction, and energy-dispersive X-ray (EDX) results. Clean interface results in strong intimate mechanical coupling between both components and causes a maximum transfer of induced strain, leading to a large magnetoelectric coupling ∼142 mV/cm·Oe measured in longitudinally magnetized-transversely polarized configuration (L-T mode). Remnant polarization ∼32 μC/cm{sup 2}, remnant magnetization ∼0.50 emu/g, and sufficiently high self biased magnetoelectricity ∼135 mV/cm Oe (L-T mode) were observed for this composite.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Assisted extraction of the energy level spacings and lever arms in direct current bias measurements of one-dimensional quantum wires, using an image recognition routine

A multiplexer technique is used to individually measure an array of 256 split gates on a single GaAs/AlGaAs heterostructure. This results in the generation of large volumes of data, which requires the development of automated data analysis routines. An algorithm is developed to find the spacing between discrete energy levels, which form due to transverse confinement from the split gate. The lever arm, which relates split gate voltage to energy, is also found from the measured data. This reduces the time spent on the analysis. Comparison with estimates obtained visually shows that the algorithm returns reliable results for subband spacing of split gates measured at 1.4 K. The routine is also used to assess direct current bias spectroscopy measurements at lower temperatures (50 mK). This technique is versatile and can be extended to other types of measurements. For example, it is used to extract the magnetic field at which Zeeman-split 1D subbands cross one another.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

BiasMDP: Carrier lifetime characterization technique with applied bias voltage

A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗