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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Manipulating Spin–Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure via Interface Engineering

Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of 2D van der Waals (vdW) materials. Herein, the observation of spin-phonon coupling in the otherwise non-magnetic TI Bi 2 Te 3 is reported, due to the proximity of FePS 3 (an antiferromagnet (AFM), T N ≈ 120 K), in a vdW heterostructure framework. Temperature-dependent Raman spectroscopic studies reveal deviation from the usual phonon anharmonicity originated from spin-lattice coupling at the Bi 2 Te 3 /FePS 3 interface at/below 60 K in the peak position (self-energy) and linewidth (lifetime) of the characteristic phonon modes of Bi 2 Te 3 (106 and 138 cm –1 ) in the stacked heterostructure. The Ginzburg-Landau (GL) formalism, where the respective phonon frequencies of Bi 2 Te 3 couple to phonons of similar frequencies of FePS 3 in the AFM phase, is adopted to understand the origin of the hybrid magneto-elastic modes. At the same time, the reduction of characteristic TN of FePS 3 from 120 K in isolated flakes to 65 K in the heterostructure, possibly due to the interfacial strain, which leads to smaller Fe-S-Fe bond angles as corroborated by computational studies using density functional theory (DFT). Besides, inserting hexagonal boron nitride within Bi 2 Te 3 /FePS 3 stacking regains the anharmonicity in Bi 2 Te 3 . As a result, controlling interfacial spin-phonon coupling in stacked heterostructure can have potential application in surface code spin logic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A Thorough Characterization of the Tellurocyanate Anion

Tellurocyanate, [TeCN] − , is the heaviest group 16 congener of the cyanate anion, [OCN] − . Due to the relative instability of the C─Te bond, tellurocyanate chemistry has seen only scarce attention. Here, we present the facile synthesis and thorough characterization of [K@crypt-222][TeCN]. The anion is essentially linear with interatomic distances C─N = 1.150(6)Å and C─Te = 2.051(4)Å, thus approximating a C≡N triple bond and for C─Te a bond order between 1 and 2. Fully 13 C and 15 N labeled [Te 13 C 15 N] − allowed for the extraction of chemical shifts and all possible coupling constants ( 13 C = 77.8 ppm, 15 N = 285.7 ppm, 125 Te = −566 ppm, 1 J 13C-15N = 8 Hz, 1 J 13C-125Te = 748 Hz, 2 J1 5N-125Te = 55 Hz), which were also determined independently by quantum chemical calculations. In the series [ChCN] − (Ch = O─Te), [TeCN] − shows the strongest spin-orbit coupling (SOC) induced heavy-atom effect on the light-atom shielding (SO-HALA-effect). In contrast, 15 N shifts are also well described without considering relativistic effects and/or SOC. Negative-ion photoelectron spectroscopy was used to extract the electron affinity (EA = 3.034 eV) and spin-orbit splitting (3807 cm −1 ) of [TeCN] • . These values continue the trends of falling EA and rising SOC in the series [ChCN] • .

Bonding analysis↗
DOE OSTI2021

MnP Films with Desired Magnetic, Magnetocaloric, and Thermoelectric Properties for a Perspective Magneto-Thermo-Electric Cooling Device

A new magneto-thermo-electric cooling device (MTECD) comprising a central magnetocaloric (MC) material (e.g., Gd) sandwiched by two thermoelectric (TE) materials (e.g., MnP) is proposed. The presence of the TE materials in the MTECD guides the heat flow direction and enhances heat pulsation. Here in this case, the usage of a ferromagnetic TE material that combines large TE with small MC properties within a similar temperature region can enhance the magnetic flux density and heat exchange efficiency. Herein, it is shown that MnP nanorod-structured films with desired magnetic, MC, and TE properties are very promising for use in MTECDs. The films are grown on Si substrates at 300, 400, and 500 °C using molecular beam epitaxy. The 400 °C sample shows a desired TE and MC combination. A large power factor of 24.06 μW m -1 K -2 is achieved at room temperature. In this temperature region, the film exhibits a small MC effect (-ΔS M ≈0.64 J kg -1 K and ΔT ad ≈0.3 K at μ 0 H = 2 T) but ferromagnetism that gives rise to the enhanced MC effect of the central MC material. These properties can enable the MTECD to operate at high frequency.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-performance and stable AgSbTe 2 -based thermoelectric materials for near room temperature applications

AgSbTe 2 -based ternary chalcogenides show excellent thermoelectric performance at low- and middle-temperature ranges, yet their practical applications are greatly limited by their intrinsic poor thermodynamic stability. In this work, we demonstrate that AgSbTe 2 -based ternary chalcogenides can be stabilized for service below their decomposition threshold. A series of Ag x Sb 2-x Te 3-x (x = 1.0, 0.9, 0.8 and 0.7) samples have been prepared by the melt-quenching method. Among them, phase pure Ag 0.9 Sb 1.1 Te 2.1 is verified by comprehensive structural characterizations from macroscale by X-ray diffraction to microscale by energy-dispersive spectroscopy and then to sub-nanometer scale by atom probe tomography. This composition is further chosen for the stability investigation. The decomposition threshold of Ag 0.9 Sb 1.1 Te 2.1 appears around 473K. Below this temperature, the chemical compositions and thermoelectric properties are barely changed even after 720 h annealing at 473 K. The figure-of-merit (zT) value of Ag 0.9 Sb 1.1 Te 2.1 below the decomposition threshold is very competitive for real applications even compared with Bi 2 Te 3 -based alloys. The average zT of Ag 0.9 Sb 1.1 Te 2.1 at 300–473 K reaches 0.84, which is higher than most other thermoelectric materials in a similar temperature range, promising applications in miniaturized refrigeration and power generation near room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Enhanced thermoelectric performance of PbSe-graphene nanocomposite manufactured with acoustic cavitation induced defects

An order of magnitude rise in the thermoelectric (TE) performance of the PbSe, a scalable and easy-to-manufacture TE material, has been achieved by incorporating reduced graphene oxide (Gr) nanoplatelets in a PbSe/PbSeO 3 heterostructure formed by acoustic cavitation-assisted oxidation. The fabricated Gr/PbSe/PbSeO 3 nanocomposites exhibit high TE performance with an exceptionally high Seebeck coefficient coupled with low thermal conductivity. The variation in the Seebeck coefficient has been attributed to a reduction in charge carrier mobility due to the ferroelectric polarization effect. Furthermore, the increase in electrical resistivity is minimized by adding graphene. At an optimal weight fraction (0.2 wt%), graphene nano-inclusions lead to superior Seebeck coefficient values as high as ~2000 μV/K at ~500 K, providing high overall TE performance. This study shows substantial changes in the TE properties of PbSe through the incorporation of graphene and PbSeO 3 . The understanding and methodology developed in this study can be exploited for the scalable manufacturing of high-performance TE materials.

Structure-property correlations↗
DOE OSTI2025

Thermally Stable Ruthenium Contact for Robust p‑Type Tellurium Transistors

Tellurium (Te) is attractive for p-channel transistors due to its high hole mobility. Despite having a low thermal budget suitable for back-end-of-line (BEOL) monolithic integration, the practical realization of Te transistors is hindered by its thermal stability. In this work, we investigate thermal stability for Te thin films grown via scalable thermal evaporation. Our findings identify ruthenium as a more thermally stable contact for p-type Te transistors, capable of withstanding temperatures up to 250 °C. Ruthenium exhibits significantly lower diffusivity in Te compared to other contact metals commonly used such as nickel and palladium. Using the transfer-length method, we measured a contact resistance of 1.25 kΩ·μm at the ruthenium-tellurium interface. Additionally, the incorporation of high-κ ZrO2 encapsulation not only suppresses the sublimation of the Te channel at elevated temperatures but also serves as the gate dielectric in top-gate devices operating at 1 V, achieving an on/off current ratio of 105.

Rahman, I K M Reaz↗
DOE OSTI2025

Spectroscopic evidence of intra-unit-cell charge redistribution in a charge-neutral magnetic topological insulator

The magnetic topological insulator MnBi 6 Te 10 has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects. The next important task for realizing the QAHE is to tune the chemical potential into the energy gap formed by the broken time-reversal symmetry. Here we reveal an intra-unit-cell charge redistribution even when the overall doping suggests a near-charge-neutral condition. By performing time- and angle-resolved photoemission spectroscopy (trARPES) on the optimally 18% Sb-doped MnBi 6 Te 10 , we observe transient surface photovoltage (SPV) effects on both the MnBi 2 Te 4 and single-Bi 2 Te 3 terminations. Furthermore, we observe a time-dependent splitting of the band structure indicating multiple SPV shifts with different magnitudes. This observation suggests that adjacent plateaus with nominally the same terminating layer exhibit a strong intra-unit-cell charge redistribution, resulting in spontaneous electrical polarization. This is consistent with static micro-ARPES measurements revealing significant doping deviations from the charge-neutral configuration. Our findings underscore the challenges of engineering the family of Mn-Bi-Te materials to realize QAHE purely through chemical doping. Achieving the desired topological quantum phase requires both a uniform carrier doping and a ferromagnetic ground state. Furthermore, the light-induced polarization within each unit cell of ferromagnetic Mn(Bi 0.82 Sb 0.18 ) 6 Te 10 may open new possibilities for optoelectronic and spintronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Nitrogen p-type doping in polycrystalline zinc selenide telluride films

Nitrogen-doped zinc selenide telluride (N:ZnSe x Te 1−x ) is of interest because it is one of the widest-gap II–VI semiconductors that can still be doped p-type with reasonably high hole concentrations. We sputter deposit N:ZnSe x Te 1−x films, varying Se/(Se + Te), or x, from 0 to 0.7, N 2 flow rate from 0.25 to 0.75 sccm, and substrate temperature from 250 to 370 °C. Increasing x from 0 to 0.39 at the optimal temperature of 370 °C and N 2 flow rate of 0.5 sccm leads to 1.3 atomic % nitrogen incorporation and wurtzite phase stabilization. Such doping and alloying increases hole concentration from 3 × 10 18 cm −3 to 3 × 10 19 cm −3 , although mobility drops from 0.4 to 0.02 cm 2 V −1 s −1 . Our sputtered N:ZnSe 0.38 Te 0.62 has an absorption onset 0.1 eV greater than the ZnTe value of 1.87 eV. Increasing x from 0 to 0.51 enhances transmittance by moving absorption onset from 1.87 to 2.11 eV with diminished band gap bowing likely due to disorder, and increases the work function from 5.12 to 5.42 eV. This combination of tunable properties makes sputtered N:ZnSe x Te 1−x desirable for transparent p-type contacts in polycrystalline Cd(Se,Te) optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

First-principles calculation of lattice distortion, electronic structure, and bonding properties of GeTe-based and PbSe-based high-entropy chalcogenides

The massive amount of wasted heat energy from industry has pushed the development of thermoelectric (TE) materials that directly convert heat into electricity to a new level of concern. Recently, multicomponent alloys such as GeTe-based and PbSe-based high-entropy (HE) chalcogenides have attracted a great deal of attention due to their potential application as TE materials. The nature of the interatomic bonding, lattice distortion (LD), and the electronic structure in this class of materials is not fully understood. Herein, we report a comprehensive computational investigation of nine GeTe-based HE alloys with eight metallic elements (Ag, Pb, Sb, Bi, Cu, Cd, Mn, and Sn) with large supercells of 1080 atoms each; seven PbSe-based HE solid solutions: Pb0.99−ySb0.012SnySe1−2xTexSx (x = 0.1, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, with y = 0) with supercells of 1000 atoms each; and five Pb0.99−ySb0.012SnySe1−2xTexSx (y = 0.05, 0.1, 0.15, 0.2, 0.25 with x = 0.25) solid solutions with supercells of 1000 atoms each. All these HE models are theoretically investigated for the first time. The electronic structure, interatomic bonding, charge transfer, and lattice distortion (LD) are investigated by first-principles calculations based on density functional theory. Multicomponent HE alloys can cause a significant LD, which affects their mechanical, thermal, and TE properties. The calculations for the GeTe-based HE chalcogenides showed that they are semiconductors with a narrow bandgap, except for m8, which has a semi-metallic characteristic, and this makes them good candidates for TE applications. For most of these models, the Fermi level shifts upward and locates deeply in the conduction bands, resulting in the enhancement of the electrical conductivity (σ). The bonding properties showed that most bonds in m5 are more dispersed, indicating highest LD and lower lattice thermal conductivity. For PbSe-based HE solid solutions, the LD calculations showed that the models Pb0.99Sb0.012Se0.5Te0.25S0.25 and Pb0.89Sb0.012Sn0.1Se0.5Te0.25S0.25 have the higher LD, and thus a lower lattice thermal conductivity. Such investigations are in high demand since it enables us to design new HE chalcogenides for TE applications. We use the novel concept of total bond order density as a single quantum mechanical metric to characterize the internal cohesion of these HE alloys and correlate with calculated properties, especially the mechanical properties. This work provides a solid database for HE chalcogenides and a road map for many potential applications. Moreover, the computational procedure we developed can be used to design new HE chalcogenides for specific TE applications.

Physics↗
DOE OSTI2021

Evolution of ELMs, pedestal profiles and fluctuations in the inter-ELM period in NBI and ECH dominated discharges in DIII-D

In DIII-D, it has been observed that ELM frequency decreases by 40% and ELM spacing becomes more regular in time when heating is changed from pure neutral beam injection (NBI) to predominantly electron cyclotron heating (ECH) in ITER Similar Shape plasmas. In comparison with pure the NBI discharges, pedestal fluctuations in magnetics and density increase in the ECH dominated discharges. Recovery of the pedestal profiles like electron density (ne), temperature (Te) and pressure (pe) shows marked differences for these two heating schemes. Average profiles in the last 30% of the ELM cycle shows higher Te, lower ne, and similar pe at the pedestal top for the ECH discharge when compared to the NBI discharge. Here, the gradient of Te (∇Te) is also steeper at the pedestal in the ECH discharge. Magnetic fluctuations show 3 distinct modes in 13~116 kHz in the ECH discharges only. ne fluctuations show two modes evolving in the inter-ELM period of the ECH discharge, a low frequency (400 kHz) quasi-coherent mode (LFQC) and high frequency (~2 MHz) broadband (HFB) fluctuations. Evolution of these modes has marked correspondence with the inter-ELM ∇Te recovery. A sharp decrease in the Dα baseline is observed whenever the LFQC weakens and the HFB grows, prior to each large ELM. Transport coefficients obtained from TRANSP shows that MTM and/or TEM are plausible candidates for the observed fluctuations. Linear gyrofluid simulation (TGLF) corroborates this characterization. TGLF shows that the linear growth rate of the most dominant mode peaks at ion-scale (kθρs ~ 0.4) at the pedestal steep gradient and the frequency is in the electron diamagnetic direction. It is proposed that increased fluctuations in the ECH dominated case, due to increased ∇Te, caused an increase in fluctuation-driven transport in the pedestal and slowed the pedestal recovery between ELMs, leading to a reduction in the ELM frequency.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

The role of electron-scale turbulence in the JET tokamak: experiments and modelling

Dedicated electron heat transport experiments have been carried out in L- and H-mode Deuterium plasmas of the JET-ILW tokamak to identify the amount of electron heat carried by electron-scale electron temperature gradient (ETG) modes. Ion cyclotron resonance heating at different positions has been used to probe the response of the electron temperature inverse gradient length R/L Te to changes in electron heat flux qe, while different amounts of neutral beam heating allowed to scan the ratio of ion to electron temperature T e /T i , which is a key parameter for the onset of ETGs. Results indicate a steepening of the normalized qe vs R/L Te curve above R/LT e ~ 8 for T e /T i ≤ 1, suggestive of the ETG onset. Ion-scale gyro-kinetic (GK) simulations match the ion heat flux and the low-R/L Te part of the qe curve, but do not reproduce such steepening at high R/L Te . Multi-scale GK simulations covering both ion and electron scales and including one impurity bundling light and heavy species indicate an ETG contribution only for R/L Te values larger than the experimental ones. Sensitivity studies of such result are difficult to achieve due to limitation in numerical resources. The quasi-linear TGLF model has been used for sensitivity studies. With the same bundled impurity as the GK multi-scale, TGLF shows the qe steepening at much larger R/L Te values than in experiment, but when using the real mix of light impurities neglecting the heavy impurities, TGLF gets closer to the experimental results. Profile simulations with TGLF including both light and heavy impurities show over-prediction of T e profiles and in some cases also of density, but good T i predictions, confirming issues with the model electron stiffness for these plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Understanding palladium–tellurium cluster formation on WTe2: From a kinetically hindered distribution to thermodynamically controlled monodispersity

Abstract A fundamental understanding of the transition metal dichalcogenide (TMDC)–metal interface is critical for their utilization in a broad range of applications. We investigate how the deposition of palladium (Pd), as a model metal, on WTe2(001), leads to the assembly of Pd into clusters and nanoparticles. Using X-ray photoemission spectroscopy, scanning tunneling microscopy imaging, and ab initio simulations, we find that Pd nucleation is driven by the interaction with and the availability of mobile excess tellurium (Te) leading to the formation of Pd-Te clusters at room temperature. Surprisingly, the nucleation of Pd-Te clusters is not affected by intrinsic surface defects, even at elevated temperatures. Upon annealing, the Pd-Te nanoclusters adopt an identical nanostructure and are stable up to ∼523 K. Density functional theory calculations provide a foundation for our understanding of the mobility of Pd and Te atoms, preferential nucleation of Pd-Te clusters, and the origin of their annealing-induced monodispersity. These results highlight the role the excess chalcogenide atoms may play in the metal deposition process. More broadly, the discoveries of synthetic pathways yielding thermally robust monodispersed nanostructures on TMDCs are critical to the manufacturing of novel quantum and microelectronics devices and catalytically active nano-alloy centers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

In 2 O 3 -Ga 2 O 3 Alloys as Potential Buffer Layers in CdTe Thin-Film Solar Cells

The efficiency of state-of-the-art Cd Te solar cells remains limited by the relatively low open-circuit voltage (V OC ). Improving the front interface is key towards realizing a higher V OC after achieving the necessary bulk carrier density and lifetime. Recent efforts in identifying buffer layers beyond Cd S have focused on Mg x Zn 1-x O, which offers tunability of the band offsets, but often suffers from high interfacial defect densities. Ga 2 O 3 -based buffer layers demonstrate tremendous improvements in interfacial defect passivation in crystalline silicon and dye-sensitized solar cells, leading to record high V OC , yet remain largely unexplored in Cd Te-based devices. Here, we perform hybrid density-functional-theory calculations to investigate pure Ga 2 O 3 and InGaO 3 alloys as a window layer in Cd Te photovoltaics. We report calculated band offsets for several pairs of solid-solid interfaces comprising transparent conducting oxide (TCO) and Cd Te heterojunctions. The results support a large conduction band offset spike of 0.67 eV for the Cd Te/Ga 2 O 3 (100) interface, while the offset is reduced to 0.18 eV for the InGaO 3 alloy and matches closely with the preferred optimum value of 0.2 eV. Device-level modeling tests of Cd Te solar cells integrating our results indicate that the highest efficiency is achieved with InGaO 3 acting both as a buffer layer and TCO. Finally, our results suggest that alloys of In 2 O 3 and Ga 2 O 3 may be attractive alternatives to Mg x Zn 1-x O for tailoring optimal conduction-band offsets of the buffer and TCO layers in high-efficiency Cd Te thin-film solar cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Equity in Transactive Energy Systems

Transactive energy (TE) research primarily focuses on efficient and reliable operation of the electricity grid by using economic or market-based constructs to incorporate significant amounts of responsive, demand-side assets. This research examines the literature to evaluate if the design of TE demonstrations incorporates microeconomic principles of equity and fairness. We also consider the extent to which the design and implementation of TE affects energy inequities, and how these inequities could be addressed in future research with specific equity valuation metrics. The design of TE systems can impact energy equity across several dimensions and we provide recommendations for incorporating microeconomic principles of equity and fairness in TE system architecture as well as metrics for improving equitable outcomes in TE system design, implementation, and performance.

Energy, Transactive Energy, Economics↗
DOE OSTI2021

Mapping the combustion modes of a dual-fuel compression ignition engine

Compression-ignition (CI) engines can produce higher thermal efficiency (TE) and thus lower carbon dioxide (CO 2 ) emissions than spark-ignition (SI) engines. Unfortunately, the overall fuel economy of CI engine vehicles is limited by their emissions of nitrogen oxides (NO x ) and soot, which must be mitigated with costly, resource- and energy-intensive aftertreatment. NO x and soot could also be mitigated by adding premixed gasoline to complement the conventional, non-premixed direct injection (DI) of diesel fuel in CI engines. Several such “dual-fuel” combustion modes have been introduced in recent years, but these modes are usually studied individually at discrete conditions. This paper introduces a mapping system for dual-fuel CI modes that links together several previously studied modes across a continuous two-dimensional diagram. This system includes the conventional diesel combustion (CDC) and conventional dual-fuel (CDF) modes; the well-explored advanced combustion modes of HCCI, RCCI, PCCI, and PPCI; and a previously discovered but relatively unexplored combustion mode that is herein titled “Piston-split Dual-Fuel Combustion” or PDFC. Tests show that dual-fuel CI engines can simultaneously increase TE and lower NO x and/or soot emissions at high loads through the use of Partial HCCI (PHCCI). At low loads, PHCCI is not possible, but either PDFC or RCCI can be used to further improve NO x and/or soot emissions, albeit at slightly lower TE. These results lead to a “partial dual-fuel” multi-mode strategy of PHCCI at high loads and CDC at low loads, linked together by PDFC. Drive cycle simulations show that this strategy, when tuned to balance NO x and soot reductions, can reduce engine-out CO 2 emissions by about 1% while reducing NO x and soot by about 20% each with respect to CDC. This increases emissions of unburnt hydrocarbons (UHC), still in a treatable range (2.0 g/kWh) but five times as high as CDC, requiring changes in aftertreatment strategy.

Engineering↗
DOE OSTI2020

Materials Data on Sc6FeTe2 by Materials Project

Sc6FeTe2 crystallizes in the hexagonal P-62m space group. The structure is three-dimensional. there are two inequivalent Sc sites. In the first Sc site, Sc is bonded in a 4-coordinate geometry to two equivalent Fe and two equivalent Te atoms. Both Sc–Fe bond lengths are 2.62 Å. Both Sc–Te bond lengths are 3.04 Å. In the second Sc site, Sc is bonded in a 5-coordinate geometry to one Fe and four equivalent Te atoms. The Sc–Fe bond length is 2.96 Å. All Sc–Te bond lengths are 3.07 Å. Fe is bonded in a 9-coordinate geometry to nine Sc atoms. Te is bonded in a 9-coordinate geometry to nine Sc atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sc6NiTe2 by Materials Project

Sc6NiTe2 crystallizes in the hexagonal P-62m space group. The structure is three-dimensional. there are two inequivalent Sc sites. In the first Sc site, Sc is bonded in a 4-coordinate geometry to two equivalent Ni and two equivalent Te atoms. Both Sc–Ni bond lengths are 2.63 Å. Both Sc–Te bond lengths are 3.03 Å. In the second Sc site, Sc is bonded in a 5-coordinate geometry to one Ni and four equivalent Te atoms. The Sc–Ni bond length is 3.05 Å. All Sc–Te bond lengths are 3.04 Å. Ni is bonded in a 9-coordinate geometry to nine Sc atoms. Te is bonded in a 9-coordinate geometry to nine Sc atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Dy6FeTe2 by Materials Project

Dy6FeTe2 crystallizes in the hexagonal P-62m space group. The structure is three-dimensional. there are two inequivalent Dy sites. In the first Dy site, Dy is bonded in a 5-coordinate geometry to one Fe and four equivalent Te atoms. The Dy–Fe bond length is 3.31 Å. All Dy–Te bond lengths are 3.23 Å. In the second Dy site, Dy is bonded in a 4-coordinate geometry to two equivalent Fe and two equivalent Te atoms. Both Dy–Fe bond lengths are 2.79 Å. Both Dy–Te bond lengths are 3.26 Å. Fe is bonded in a 9-coordinate geometry to nine Dy atoms. Te is bonded in a 9-coordinate geometry to nine Dy atoms.

36 MATERIALS SCIENCE↗