Electron and field interactions with thin films and surfaces Final report
Electron and field interactions with thin films and surfaces
Juretschke, H. J.↗
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Development of GaAs and GaAs/1-x/P/x/ thin-film bipolar transistors Final report
Development of GaAs and GaAs/1-xPx thin film bipolar transistors
Dean, R. H.↗
Ion-beam deposition of thin films of diamondlike carbon
Ion beam deposition of insulating carbon thin films on room temperature substrates, considering transparency, index of refraction, insulating capacity, glass scratching ability, etc
Aisenberg, S.↗
Holographic thin film analyzer
A system for the analysis and measurement of thin films in which the light output of a laser is split into two beams is discribed. The first beam is focused to illuminate the entire area of a photographic plate and the second beam is colummated and directed through a relatively small portion of the photographic plate onto the sample with the film to be observed. The surface of the sample is positioned at a slight angle with respect to a plane normal to the second beam and the light reflected from the sample arrives back at the photographic plate in a region other than through which the second beam originally passes. By making two successive exposures during the deposition of material on the surface of the sample, holograms are recorded on the photographic plate. The plate is then developed and interference lines of the hologram provide a measurement of the film or material deposited between exposure.
Williams, J. R.↗
Determining the refractive index and thickness of thin films from prism coupler measurements
A simple method of determining thin film parameters from mode indices measured using a prism coupler is described. The problem is reduced to doing two least squares straight line fits through measured mode indices vs effective mode number. The slope and y intercept of the line are simply related to the thickness and refractive index of film, respectively. The approach takes into account the correlation between as well as the uncertainty in the individual measurements from all sources of error to give precise error tolerances on the best fit values. Due to the precision of the tolerances, anisotropic films can be identified and characterized.
Kirsch, S. T.↗
Computer simulation of thin film nucleation and growth
Some of the processes involved in thin film nucleation and growth were simulated by means of a digital computer. The main conclusions drawn from the simulation results are (1) Because of the random nature of the processes involved, a large variation in results is obtained. (2) Upon impingement, clusters are formed up to a coverage of ca. 0.2, and from there on growth of existing clusters, rather than formation of new ones, takes place. (3) Surface migration is responsible for the formation of most of the clusters at coverages smaller than 0.1, whereas at higher coverages most clusters are formed upon impingement. (4) Surface migration accelerates the growth and causes reduction in cluster density. (5) Reevaporation slows the growth and reduces the cluster density dramatically.
Salik, J.↗
Thin films of the Bi2Sr2Ca2Cu3O(x) superconductor
Using RF sputtering technique, thin films of near single phase Bi2Sr2Ca2Cu3O(x) were successfully prepared on SrTiO3(100), MgO(100), and LaAlO3(012) substrates. Zero resistance of these films occurred in the range of 90-105 K.
Mei, YU↗
Preliminary investigation of thin film polymers exposed to low Earth orbit
Preliminary results of thin film polymers exposed to low-Earth orbit aboard the Long Duration Exposure Facility (LDEF) are discussed. Dynamic testing of a 0.92/0.92 mil. polyester laminate film indicated that the modulus loss of the exposed specimens may be very small. When the storage modulus of the exposed specimen was compared to the storage modulus of a control specimen over a temperature range of minus 150 degrees to 100 degrees, there was very little change. Fourier Transform Spectroscopy performed on the same exposed material indicated crosslinking of the polyethylene, which was verified by an increase in the storage modulus above the glass transition temperature. Optical microscopy of the sample showed micrometeoroid strikes and contamination in spots by what is thought to be silicon outgassed from a nearby experiment.
Strganac, Thomas↗
A Novel K-Band Tunable Microstrip Bandpass Filter Using a Thin Film HTS/Ferroelectric/ Dielectric Configuration
We report on YBCO/strontium titanate (STO) thin film K-band tunable bandpass filters on lanthanum aluminate substrates. The 2 pole filters were designed for a center frequency of 19 GHz and 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO (epsilon-rSTO). Center frequency shifts greater than 2 GHz were obtained at a 400V bipolar dc bias at temperatures below 77K, with minimum degradation in the insertion loss of the filters.
Subramanyam, G.↗
Optical Properties of Semiconductor-Metal Composite Thin Films in the Infrared Region
Germanium:Silver (Ge:Ag) composite thin films having different concentrations of Ag, ranging from 7% to 40% have been prepared by dc co-sputtering of Ge an Ag and the films' surface morphology and optical properties have been characterized using transmission electron microscopy (TEM) and infrared spectrophotometry. It is seen that while the films containing lower concentrations of Ag have island-like morphology (i.e. Ag particles distributed in a Ge matrix), the higher metallic concentration films tend to have symmetric distribution of Ag and Ge.
Films Germanium Silver↗
Thin-Film Selective Emitter
Direct conversion of thermal energy into electrical energy using a photovoltaic cell is called thermophotovoltaic energy conversion. One way to make this an efficient process is to have the thermal energy source be an efficient selective emitter of radiation. The emission must be near the band-gap energy of the photovoltaic cell. One possible method to achieve an efficient selective emitter is the use of a thin film of rare-earth oxides. The determination of the efficiency of such an emitter requires analysis of the spectral emittance of the thin film including scattering and reflectance at the vacuum-film and film-substrate interfaces. Emitter efficiencies (power emitted in emission band/total emitted power) in the range 0.35-0.7 are predicted. There is an optimum optical depth to obtain maximum efficiency. High emitter efficiencies are attained only for low (less than 0.05) substrate emittance values, both with and without scattering. The low substrate emittance required for high efficiency limits the choice of substrate materials to highly reflective metals or high-transmission materials such as sapphire.
Chubb, Donald L.↗
Manipulating the metal-to-insulator transition and magnetic properties in manganite thin films via epitaxial strain
Strain engineering of epitaxial transition metal oxide heterostructures offers an intriguing opportunity to control electronic structures by modifying the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, we demonstrate that the electronic structure, magnetic and transport properties of La 0.9 Ba 0.1 MnO 3 thin films can be effectively controlled by epitaxial strain. Spectroscopic studies and first-principles calculations reveal that the orbital occupancy in Mn eg orbitals can be switched from the d 3z 2 -r 2 orbital to the d x 2 -y 2 orbital by varying the strain from compressive to tensile. Further, the change of orbital occupancy associated with Mn 3d-O 2p hybridization leads to dramatic modulation of the magnetic and electronic properties of strained La 0.9 Ba 0.1 MnO 3 thin films. Under moderate tensile strain, an emergent ferromagnetic insulating state with an enhanced ferromagnetic Curie temperature of 215 K is achieved. These findings not only deepen our understanding of electronic structures, magnetic and transport properties in the La 0.9 Ba 0.1 MnO 3 system, but also demonstrate the use of epitaxial strain as an effective knob to tune the electronic structures and related physical properties for potential spintronic device applications.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Growth and Characterization of Epitaxial FeWO 4 Thin Films with Controlled Oxygen Stoichiometry
Here, we report the growth of single-phase epitaxial FeWO 4 thin films, using plasma-assisted molecular beam epitaxy, and investigate structural, optical, and electronic properties. The FeWO 4 films grow in (100) orientation on c-plane sapphire (0001) substrates and exhibit 3 rotational twin variants where FeWO 4 [001] is aligned to sapphire [100] equivalent in-plane directions. X-ray diffraction measurements indicate that the epitaxial FeWO 4 (100) structure is optimized when 80-100 W of rf power is applied to an atomic oxygen source during growth, yielding films with minimal strain and impurity phases or other orientations. In films grown with 120 W of rf power, FeWO 4 crystallites develop inhomogeneous and homogeneous strains and are potentially contaminated with Fe 3+ oxide phase impurities. In films grown with 60 W of rf power, FeWO 4 crystallites do not form fully epitaxial layers. X-ray photoelectron spectroscopy indicates that the structural changes are correlated with the Fe 3+ /Fe 2+ oxidation state ratio increasing from 0.6-1.4 with rf power from 60-120 W. X-ray fluorescence spectroscopy indicates that the Fe/W composition ratio is also increasing from 1.1-1.8 with rf power from 60-120 W. Ultraviolet and visible optical absorption spectra indicate a 1.8 ± 0.1 eV band gap with an additional interband absorption feature at 3.1 ± 0.1 eV in the 80-100 W films, with similar onsets observed in the 60 W films. In the 120 W films, the higher lying transition is shifted to 2.7 ± 0.1 eV due to the Fe 3+ enrichment. Electrical resistivity decreases over 2 orders of magnitude with oxidation from 10 4 -10 5 Ω cm in 60 W films to 120 ± 10 Ω cm in 120 W films. Thermopower measurements show p-type to n-type conductivity conversion when oxidation states shift from Fe 2+ majority in the 100 W films to Fe 3+ majority in the 120 W films. We conclude that electron polaron hopping driven by Fe 3+ is a dominant transport mechanism and a source of n-type conductivity in overoxidized FeWO 4 films.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Effect of correlated oxide electrodes on disorder pinning and thermal roughening of ferroelectric domain walls in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films
We report the competing effects of disorder pinning and thermal roughening on ferroelectric domain walls as a function of temperature in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films deposited on (001) SrTiO 3 substrates buffered by three types of correlated oxide electrodes, La 0.67 Sr 0.33 MnO 3 , LaNiO 3 , and SrIrO 3 . Piezo-response force microscopy studies show that the 50 nm PbZr 0.2 Ti 0.8 O 3 films are uniformly polarized in the as-grown states, with the patterned domain structures persisting above 700 °C. For all three types of films, the domain wall roughness is dominated by 2D random bond disorder at room temperature, and transitions to 1D thermal roughening upon heating. The roughness exponent ζ increases progressively from 0.3 to 0.5 within a temperature window that depends on the bottom conducting oxide type, from which we extracted the distribution of disorder pinning energy. Lastly, we discuss the possible origins of the disorder pinning and the effect of the correlated oxide electrodes on the energy landscape of DW motion.
36 MATERIALS SCIENCE↗
Study of thin film large area photovoltaic solar energy converter First quarterly report, 25 Oct. 1965 - 24 Jan. 1966
Cadmium sulfide thin film photovoltaic cell for large area solar energy converter
ENERGY CONVERTER↗
Superconductivity in Ruddlesden–Popper nickelates: a review of recent progress, focusing on thin films
The discovery of superconductivity with Tc ∼ 80 K in the nickelate Ruddlesden-Popper bilayer La3Ni2O7 at high pressure has opened a new platform for unconventional superconductivity, followed by the subsequent observation of superconductivity in trilayer La4Ni3O10, also at high pressure. Remarkably, ambient-pressure superconductivity was also observed recently in La3Ni2O7 ultra-thin films when grown on substrates that provide compressive strain. This discovery significantly extends the type of experimental techniques that can be used in nickelates, previously limited due to the high-pressure constraint. Discussing the similarities and differences among these nickel oxides will provide new insights into understanding the mechanism of high-Tc superconductivity in correlated electron systems. In this paper, we review the experimental and theoretical progress on Ruddlesden–Popper nickelates, with emphasis on thin films, and discuss future perspectives and research directions.
Zhang, Yang [ORNL] (ORCID:0000000336235883)↗
Numerical design considerations for vapor transport deposition of metal-halide perovskite thin films
While metal-halide perovskites (MHPs) offer high efficiency and potential application in single junction and tandem solar cells, challenges remain in translating solution-based methods to commercial-scale production. Vapor transport deposition (VTD) offers advantages such as precise control over film composition and purity, as well as the possibility of achieving high thin film deposition rates for scale-up. In this work, a numerical model is developed to simulate the deposition process, analyzing the impact of parameters including source material temperature, carrier gas and dilution gas flow rates, and chamber pressure to optimize deposition rates and film uniformity. Geometrical parameters, such as throw distance, are also found to significantly affect rate and uniformity. Furthermore, the modeling results presented here offer valuable insight for improving the scalability of VTD for the processing of metal-halide perovskites.
Chemical vapor deposition↗
Nanoscale visualization of the thermally driven evolution of antiferromagnetic domains in FeTe thin films
Antiferromagnetic order, being a ground state of a number of exotic quantum materials, is of immense interest both from the fundamental physics perspective and for driving potential technological applications. For a complete understanding of antiferromagnetism in materials, nanoscale visualization of antiferromagnetic domains, domain walls, and their robustness to external perturbations is highly desirable. Here, we synthesize antiferromagnetic FeTe thin films using molecular-beam epitaxy. We visualize local antiferromagnetic ordering and domain formation using spin-polarized scanning tunneling microscopy. From the atomically resolved scanning tunneling microscopy topographs, we calculate local structural distortions to find a high correlation with the distribution of the antiferromagnetic order. This is consistent with the monoclinic structure in the antiferromagnetic state. Interestingly, we observe a substantial domain-wall change by small temperature variations, unexpected for the low-temperature changes used compared to the much higher antiferromagnetic ordering temperature of FeTe. This is in contrast to electronic nematic domains in the cousin FeSe multilayer films, where we find no electronic or structural change within the same temperature range. Further, our experiments provide the atomic-scale imaging of perturbation-driven magnetic domain evolution simultaneous with the ensuing structural response of the system. The results reveal surprising thermally driven modulations of antiferromagnetic domains in FeTe thin films well below the Néel temperature.
36 MATERIALS SCIENCE↗