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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Long-time simulations for fixed input states on quantum hardware

Publicly accessible quantum computers open the exciting possibility of experimental dynamical quantum simulations. While rapidly improving, current devices have short coherence times, restricting the viable circuit depth. Despite these limitations, we demonstrate long-time, high fidelity simulations on current hardware. Specifically, we simulate an XY-model spin chain on Rigetti and IBM quantum computers, maintaining a fidelity over 0.9 for 150 times longer than is possible using the iterated Trotter method. Our simulations use an algorithm we call fixed state Variational Fast Forwarding (fsVFF). Recent work has shown an approximate diagonalization of a short time evolution unitary allows a fixed-depth simulation. fsVFF substantially reduces the required resources by only diagonalizing the energy subspace spanned by the initial state, rather than over the total Hilbert space. We further demonstrate the viability of fsVFF through large numerical simulations, and provide an analysis of the noise resilience and scaling of simulation errors.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2011

High-Efficiency Ka-Band Waveguide Two-Way Asymmetric Power Combiner

NASA is planning a number of Space Exploration, Earth Observation and Space Science missions where Ka-band solid-state power amplifiers (SSPAs) could have a role. Monolithic microwave integrated circuit (MMIC) based SSPAs with output powers on the order of 10 W at Ka-band frequencies would be adequate to satisfy the data transmission rate requirements at the distances involved. MMICs are a type of integrated circuit fabricated on a GaAs wafer, which operates at micro wave frequencies and performs the function of signal amplification. The highest power Ka-band (31.8 to 32.3 GHz) SSPA to have flown in space had an output power of 2.6 W with an overall efficiency of 14.3 percent. This SSPA was built around discrete GaAs pHEMT (high electron mobility transistor) devices and flew aboard the Deep Space One spacecraft. State-of-the-art GaAs pHEMT-based MMIC power amplifiers (PAs) can deliver RF power at Ka-band frequencies anywhere from 3 W with a power added efficiency (PAE) of 32 percent to 6 W with a PAE of 26 percent. However, to achieve power levels higher than 6 W, the output of several MMIC PAs would need to be combined using a high-efficiency power combiner. Conventional binary waveguide power combiners, based on short-slot and magic-T circuits, require MMIC PAs with identical amplitude and phase characteristics for high combining efficiency. However, due to manufacturing process variations, the output powers of the MMIC PAs tend to be unequal, and hence the need to develop unequal power combiners. A two-way asymmetric magic-T based power combiner for MMIC power amplifiers, which can take in unequal inputs, has been successfully designed, fabricated, and characterized over NASA s Deep Space Network (DSN) frequency range of 31.8 to 32.3 GHz. The figure is a transparent view of the a sym - metric combiner that shows the 4-port configuration and the internal structure. The rod, post, and iris are positioned by design to achieve the desired asymmetric power ratio, phase equality, and port isolation. Although the combiner was designed for an input power ratio of 2:1, it can be custom-designed for any arbitrary power ratio and frequency range. The manufactured prototype combiner was precision machined from aluminum and is less than 2 in.3 (32.8 cm3). Previously investigated rectangular waveguide unequal power combiners were based on shunt/series coupling slots, E-plane septums, or H-plane T-junctions. All the prior art unequal power combiners operated at or below X-band (10 GHz) frequencies and were primarily used in the feed network of antenna arrays. The only reported asymmetric magic-T was developed as a 2:1 power divider for operation at a much lower frequency, around 500 MHz. The measured power ratio when tested as a power divider was very close to 2 and the phase balance was within 2.6, resulting in near ideal performance. When tested as a combiner using two MMIC SSPAs with a 2:1 power output ratio, an efficiency greater than 90 percent was demonstrated over the 500 MHz DSN frequency range. The return loss at the combiner output port (1) was greater than 18 dB and the input port (2 and 3) isolation was greater than 22 dB. The results show the asymmetric combiner to be a good candidate for high-efficiency power combining of two or more SSPAs needed to achieve the 6 to 10 W required by space communications systems of future NASA missions.

Wintucky, E. G.↗
NASA NTRS1972

Magnetic circuitry mutual coupling probe

Development of magnetic probe for nondestructive testing of multilayer printed circuit boards to determine existence of opens or shorts is reported. Components of probe are described and procedures for operation are discussed. Two illustrations are provided to show magnetic circuits and principles of operation.

Anthony, P. L.↗
DOE OSTI2022

Constant-depth circuits for dynamic simulations of materials on quantum computers

Abstract Dynamic simulation of materials is a promising application for near-term quantum computers. Current algorithms for Hamiltonian simulation, however, produce circuits that grow in depth with increasing simulation time, limiting feasible simulations to short-time dynamics. Here, we present a method for generating circuits that are constant in depth with increasing simulation time for a specific subset of one-dimensional (1D) materials Hamiltonians, thereby enabling simulations out to arbitrarily long times. Furthermore, by removing the effective limit on the number of feasibly simulatable time-steps, the constant-depth circuits enable Trotter error to be made negligibly small by allowing simulations to be broken into arbitrarily many time-steps. For an N -spin system, the constant-depth circuit contains only $\mathcal {O}(N^{2})$ O ( N 2 ) CNOT gates. Such compact circuits enable us to successfully execute long-time dynamic simulation of ubiquitous models, such as the transverse field Ising and XY models, on current quantum hardware for systems of up to 5 qubits without the need for complex error mitigation techniques. Aside from enabling long-time dynamic simulations with minimal Trotter error for a specific subset of 1D Hamiltonians, our constant-depth circuits can advance materials simulations on quantum computers more broadly in a number of indirect ways.

Materials simulation↗
DOE OSTI2020

Quantum Mechanical Evaluation of CZTS Properties for Photovoltaic Applications

As a quaternary semiconductor, CZTS (Cu 2 ZnSnS 4 ) shows promise as a thin-film solar cell material. The constituent elements in CZTS are abundant and non-toxic, and CZTS has an ideal band gap (~1.5 eV) for solar cell applications, which produces a large absorption coefficient. Unfortunately, the low efficiencies and difficulties in synthesizing the desired crystallographic phase (kesterite) and the associated formation of antisite defects limit its deployment. Using theoretical and computational tools, we investigated these current limitations, explored strategies to resolve these issues, and developed design guidelines to improve the efficiency of CZTS-based sunlight absorbers. We first sought to understand the challenges associated with synthesizing the kesterite phase and proposed ways to favor kesterite growth, thus adding to the understanding of CZTS photovoltaics. We also analyzed the major limitations at the atomic scale lowering the efficiency of CZTS: the low open-circuit voltage (V oc ) and the short carrier lifetime, thus addressing the technical effectiveness of CZTS photovoltaics. We believe the latter is due to Shockley-Read-Hall (SRH) recombination centers associated with point defects. We also studied the electronic structure of interfaces and defects introducing such recombination centers, and explored doping strategies to reduce SRH recombination. Ultimately, these efforts will benefit the public by contributing to the development of cheap and efficient solar energy conversion technologies made from abundant, non-toxic materials.

14 SOLAR ENERGY↗
NASA NTRS1991

Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

Wu, Jiin C.↗
NASA NTRS1982

Impact-Energized Transmitter

Impact-induced strain in piezoelectric ceramic could power a short-range transmitter. Proposed impact-energized radio transmission would eliminate the need for external power sources for batteries, which are often short lived and impractical to replace under operating conditions. Piezoelectric ceramic attached to impact head supplies energy to drive resonant circuit and antenna. Receiver tuned to resonant frequency receives short pulse.

Broussard, P. H. J.↗
DOE OSTI2024

Constant-Depth Preparation of Matrix Product States with Adaptive Quantum Circuits

Adaptive quantum circuits, which combine local unitary gates, midcircuit measurements, and feedforward operations, have recently emerged as a promising avenue for efficient state preparation, particularly on near-term quantum devices limited to shallow-depth circuits. Matrix product states (MPS) comprise a significant class of many-body entangled states, efficiently describing the ground states of one-dimensional gapped local Hamiltonians and finding applications in a number of recent quantum algorithms. Recently, it has been shown that the Affleck-Kennedy-Lieb-Tasaki state—a paradigmatic example of an MPS—can be exactly prepared with an adaptive quantum circuit of constant depth, an impossible feat with local unitary gates alone due to its nonzero correlation length [Smith , PRX Quantum 4, 020315 (2023)]. In this work, we broaden the scope of this approach and demonstrate that a diverse class of MPS can be exactly prepared using constant-depth adaptive quantum circuits, outperforming theoretically optimal preparation with unitary circuits. We show that this class includes short- and long-ranged entangled MPS, symmetry-protected topological (SPT) and symmetry-broken states, MPS with finite Abelian, non-Abelian, and continuous symmetries, resource states for MBQC, and families of states with tunable correlation length. Moreover, we illustrate the utility of our framework for designing constant-depth sampling protocols, such as for random MPS or for generating MPS in a particular SPT phase. We present sufficient conditions for particular MPS to be preparable in constant time, with global on-site symmetry playing a pivotal role. Altogether, this work demonstrates the immense promise of adaptive quantum circuits for efficiently preparing many-body entangled states and provides explicit algorithms that outperform known protocols to prepare an essential class of states. Published by the American Physical Society 2024

Smith, Kevin C. (ORCID:0000000223971518)↗
DOE OSTI2023

Hybrid-Magnon Quantum Devices: Strategies and Approaches

Hybrid magnonics offers novel paths towards quantum information by utilizing the unique advantages of magnon excitations. We review two strategies of hybrid magnonics for advancing quantum computing, i.e., multi-magnon entanglement and nonreciprocal magnon transduction. We also present our efforts on low-damping magnetic materials, short-wavelength magnon transduction, and nanowire superconducting circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗
NASA NTRS1990

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Landis, Geoffrey A.↗
NASA NTRS2000

Investigation of Fully Three-Dimensional Helical RF Field Effects on TWT Beam/Circuit Interaction

A fully three-dimensional (3D), time-dependent, helical traveling wave-tube (TWT) interaction model has been developed using the electromagnetic particle-in-cell (PIC) code MAFIA. The model includes a short section of helical slow-wave circuit with excitation fed by RF input/output couplers, and electron beam contained by periodic permanent magnet (PPM) focusing. All components of the model are simulated in three dimensions allowing the effects of the fully 3D helical fields on RF circuit/beam interaction to be investigated for the first time. The development of the interaction model is presented, and predicted TWT performance using 2.5D and 3D models is compared to investigate the effect of conventional approximations used in TWT analyses.

Kory, Carol L.↗
NASA NTRS2001

Accurate Time-Dependent Traveling-Wave Tube Model Developed for Computational Bit-Error-Rate Testing

The phenomenal growth of the satellite communications industry has created a large demand for traveling-wave tubes (TWT's) operating with unprecedented specifications requiring the design and production of many novel devices in record time. To achieve this, the TWT industry heavily relies on computational modeling. However, the TWT industry's computational modeling capabilities need to be improved because there are often discrepancies between measured TWT data and that predicted by conventional two-dimensional helical TWT interaction codes. This limits the analysis and design of novel devices or TWT's with parameters differing from what is conventionally manufactured. In addition, the inaccuracy of current computational tools limits achievable TWT performance because optimized designs require highly accurate models. To address these concerns, a fully three-dimensional, time-dependent, helical TWT interaction model was developed using the electromagnetic particle-in-cell code MAFIA (Solution of MAxwell's equations by the Finite-Integration-Algorithm). The model includes a short section of helical slow-wave circuit with excitation fed by radiofrequency input/output couplers, and an electron beam contained by periodic permanent magnet focusing. A cutaway view of several turns of the three-dimensional helical slow-wave circuit with input/output couplers is shown. This has been shown to be more accurate than conventionally used two-dimensional models. The growth of the communications industry has also imposed a demand for increased data rates for the transmission of large volumes of data. To achieve increased data rates, complex modulation and multiple access techniques are employed requiring minimum distortion of the signal as it is passed through the TWT. Thus, intersymbol interference (ISI) becomes a major consideration, as well as suspected causes such as reflections within the TWT. To experimentally investigate effects of the physical TWT on ISI would be prohibitively expensive, as it would require manufacturing numerous amplifiers, in addition to acquiring the required digital hardware. As an alternative, the time-domain TWT interaction model developed here provides the capability to establish a computational test bench where ISI or bit error rate can be simulated as a function of TWT operating parameters and component geometries. Intermodulation products, harmonic generation, and backward waves can also be monitored with the model for similar correlations. The advancements in computational capabilities and corresponding potential improvements in TWT performance may prove to be the enabling technologies for realizing unprecedented data rates for near real time transmission of the increasingly larger volumes of data demanded by planned commercial and Government satellite communications applications. This work is in support of the Cross Enterprise Technology Development Program in Headquarters' Advanced Technology & Mission Studies Division and the Air Force Office of Scientific Research Small Business Technology Transfer programs.

Kory, Carol L.↗
NASA NTRS1992

An alternate method for achieving temperature control in the -130 C to 75 C range

Thermal vacuum testing often requires temperature control of chamber shrouds and heat exchangers within the -130 C to 75 C range. There are two conventional methods which are normally employed to achieve control through this intermediate temperature range: (1) single-pass flow where control is achieved by alternately pulsing hot gaseous nitrogen (GN2) and cold LN2 into the feed line to yield the setpoint temperature; and (2) closed-loop circulation where control is achieved by either electrically heating or LN2 cooling the circulating GN2 to yield the setpoint temperature. A third method, using a mass flow ratio controller along with modulating control valves on GN2 and LN2 lines, provides excellent control but equipment for this method is expensive and cost-prohibitive for all but long-term continuous processes. The single-pass method provides marginal control and can result in unexpected overcooling of the test article from even a short pulse of LN2. The closed-loop circulation method provides excellent control but requires an expensive blower capable of operating at elevated pressures and cryogenic temperatures. Where precise control is needed (plus or minus 2 C), single-pass flow systems typically have not provided the precision required, primarily because of overcooling temperature excursions. Where several individual circuits are to be controlled at different temperatures, the use of expensive cryogenic blowers for each circuit is also cost-prohibitive, especially for short duration of one-of-a-kind tests. At JPL, a variant of the single-pass method was developed that was shown to provide precise temperature control in the -130 C to 75 C range while exhibiting minimal setpoint overshoot during temperature transitions. This alternate method uses a commercially available temperature controller along with a GN2/LN2 mixer to dampen the amplitude of cold temperature spikes caused by LN2 pulsing. The design of the GN2/LN2 mixer, the overall control system configuration, the operational procedure, and the prototype system test results are described.

Johnson, Kenneth R.↗
DOE OSTI2024

Fast pseudorandom quantum state generators via inflationary quantum gates

Abstract We propose a mechanism for reaching pseudorandom quantum states, computationally indistinguishable from Haar random, with shallow log-ndepth quantum circuits, wherenis the number of qudits. We argue that$$\log n$$ log n depth 2-qubit-gate-based generic random quantum circuits that are claimed to provide a lower bound on the speed of information scrambling, cannot produce computationally pseudorandom quantum states. This conclusion is connected with the presence of polynomial (inn) tails in the stay probability of short Pauli strings that survive evolution through such shallow circuits. We show, however, that stay-probability-tails can be eliminated and pseudorandom quantum states can be accomplished with shallow$$\log n$$ log n depth circuits built from a special universal family of “inflationary” quantum (IQ) gates. We prove that IQ-gates cannot be implemented with 2-qubit gates, but can be realized either as a subset of 2-qudit-gates inU(d 2 ) withd ≥ 3 anddprime, or as special 3-qubit gates.

Physics↗
DOE OSTI2024

Finite-Time Teleportation Phase Transition in Random Quantum Circuits

How long does it take to entangle two distant qubits in a quantum circuit evolved by generic unitary dynamics? Here, we show that if the time evolution is followed by measurements of all but two infinitely separated test qubits, then the entanglement between them can undergo a phase transition and become nonzero at a finite critical time t c . The fidelity of teleporting a quantum state from an input qubit to an infinitely distant output qubit shows the same critical onset. Specifically, these finite-time transitions occur in short-range interacting two-dimensional random unitary circuits and in sufficiently long-range interacting one-dimensional circuits. The phase transition is understood by mapping the random continuous-time evolution to a finite-temperature thermal state of an effective spin Hamiltonian, where the inverse temperature equals the evolution time in the circuit. In this framework, the entanglement between two distant qubits at times t > t c corresponds to the emergence of long-range ferromagnetic spin correlations below the critical temperature. We verify these predictions using numerical simulation of Clifford circuits and propose potential realizations in existing platforms for quantum simulation.

36 MATERIALS SCIENCE↗
NASA NTRS2004

Printed Electronic Devices in Human Spaceflight

The space environment requires robust sensing, control, and automation, whether in support of human spaceflight or of robotic exploration. Spaceflight embodies the known extremes of temperature, radiation, shock, vibration, and static loads, and demands high reliability at the lowest possible mass. Because printed electronic circuits fulfill all these requirements, printed circuit technology and the exploration of space have been closely coupled throughout their short histories. In this presentation, we will explore the space (and space launch) environments as drivers of printed circuit design, a brief history of NASA's use of printed electronic circuits, and we will examine future requirements for such circuits in our continued exploration of space.

Bacon, John B.↗
NASA NTRS1974

Binary-selectable detector holdoff circuit

High-speed switching circuit protects detectors from sudden, extremely-intense backscattered radiation that results from short-range atmospheric dust layers, or low-level clouds, entering laser/radar field of view. Function of circuit is to provide computer-controlled switching of photodiode detector, preamplifier power-supply voltages, in approximately 10 nanoseconds.

Kadrmas, K. A.↗