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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

We have fabricated Fe{sub 3}O{sub 4}/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p{sup ++}) semiconducting nature of Fe{sub 3}O{sub 4}, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Conversion efficiency improvement of inverted CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cells with room temperature sputtered ZnO by adding the C{sub 60} interlayer

We have demonstrated the performance of inverted CH{sub 3}NH{sub 3}PbI{sub 3} perovskite-based solar cells (SCs) with a room temperature (RT) sputtered ZnO electron transport layer by adding fullerene (C{sub 60}) interlayer. ZnO exhibits a better matched conduction band level with perovskite and Al work function and around energy offset of 2.2 eV between highest occupied molecular orbital level of CH{sub 3}NH{sub 3}PbI{sub 3} perovskite and valance band level of ZnO. However, the CH{sub 3}NH{sub 3}PbI{sub 3} perovskite layer will be damaged during direct RT sputtering deposition of ZnO. Therefore, the C{sub 60} interlayer having matched conduction band level with ZnO and CH{sub 3}NH{sub 3}PbI{sub 3} perovskite added between the CH{sub 3}NH{sub 3}PbI{sub 3} perovskite and RT sputtered ZnO layers for protection prevents sputtering damages on the CH{sub 3}NH{sub 3}PbI{sub 3} perovskite layer. The short-circuit current density (J{sub SC}, 19.41 mA/cm{sup 2}) and open circuit voltage (V{sub OC}, 0.91 V) of the SCs with glass/ITO/poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS)/perovskite/C{sub 60}/RT sputtered ZnO/Al structure is higher than the J{sub SC} (16.23 mA/cm{sup 2}) and V{sub OC} (0.90 V) of the reference SC with glass/ITO/PEDOT:PSS/perovskite/C{sub 60}/bathocuproine (BCP)/Al structure. Although the SCs with the former structure has a lower fill factor (FF%) than the SCs with the latter structure, its conversion efficiency η% (10.93%) is higher than that (10.6%) of the latter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Room temperature magnetoelectric coupling in BaTi{sub 1−x}Cr{sub x}O{sub 3} multiferroic thin films

We report on room temperature (RT) magnetoelectric coupling in tetragonal BaTi{sub 1−x}Cr{sub x}O{sub 3} thin film multiferroics (BTCO) sputter deposited on (100) SrTiO{sub 3} (where x = 0.005, 0.01, 0.02, and 0.03). As-deposited thin films are vacuum annealed by electron beam rapid thermal annealing technique. 50 nm thick BTCO with “x = 0.01” shows RT ferromagnetic and ferroelectric response with saturation magnetic moment of 1120 emu/cc and polarization of 14.7 microcoulomb/cm{sup 2}. Piezoresponse/magnetic force microscope images shows RT magnetoelectric coupling in BTCO with “x = 0.01,” which is confirmed using magnetocapacitance measurement where an increase in capacitance from 17.5 pF to 18.4 pF is observed with an applied magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq{sub 3}-based organic light-emitting diodes at room temperature

The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq{sub 3}) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq{sub 3} system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

We report the measurement of diffusive electronic spin transport characteristics in an epitaxial wurtzite GaN lateral spin valve at room temperature. Hanle spin precession and non-local spin accumulation measurements have been performed with the spin valves fabricated with FeCo/MgO spin contacts. Electron spin relaxation length and spin-flip lifetime of 176 nm and 37 ps, respectively, are derived from analysis of results obtained from four-terminal Hanle spin precession measurements at 300 K. The role of dislocations and defects in bulk GaN has also been examined in the context of electronic spin relaxation dynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Pyridine-2,6-diyl dinitroxides as room-temperature triplet ligands

We have proposed tert-butyl 2-pyridyl nitroxide radicals as a promising paramagnetic chelating ligand, where the direct radical-metal bond leads to strong magnetic interaction. We successfully synthesized and isolated PyBN derivatives (pyridine-2,6-diyl bis(tert-butyl nitroxides)). The molecular and crystal structures of the target biradicals, MesPyBN, AntPyBN and tBuOPyBN were determined from the X-ray crystal structure analysis, which possess mesityl, 9-anthryl and tert-butoxy groups at the 5-position of the pyridine ring, respectively. The ground triplet state was characterized by means of SQUID susceptometry for each compound. On heating, the χ{sub m}T values of all the PyBN derivatives increased and reached a plateau at ca. 1.0 cm{sup 3} K mol{sup −1} at 300 K. It implies that biradicals behaved as triplet molecules even at room temperature, or 2J/k{sub B} >> 300 K. From the decay monitored in solution electron-spin resonance spectroscopy, MesPyBN was the most persistent, while tBuOPyBN was the most reactive, of the three.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission

We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6% lattice mismatch between GaAs and GaP in the Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6 × 10{sup 10} per cm{sup −2} and multimodal size distribution. The luminescence spectra show two peaks in the range of 1.7 and 2.1 eV. The samples with larger quantum dots have red emission and show less thermal quenching compared with the samples with smaller QDs. The large QDs luminescence up to room temperature. We attribute the high energy emission to indirect carrier recombination in the thin quantum wells or small strained quantum dots, whereas the low energy red emission is due to the direct electron-hole recombination in the relaxed quantum dots.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High-speed, room-temperature quantum cascade detectors at 4.3 μm

We present high-speed, room-temperature operated 4.3 μm quantum cascade detectors. The devices are processed as square mesas with 50 Ω coplanar access line and air-bridge connector. The high frequency features are explored using microwave rectification technique and a RLC circuit model. The -3 dB cutoff frequency is experimentally 9 GHz and 4 GHz for 20×20 μm{sup 2} and 50×50 μm{sup 2} detectors, respectively. The equivalent circuit analysis shows that a second order filter feature governs the devices. Higher cutoff frequency can be achieved by eliminate the parasitics further.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Magnetism in transition metal-substituted germanane: A search for room temperature spintronic devices

Using first-principles calculations, we investigated the geometric structure, binding energy, and magnetic behavior of monolayer germanane substitutional doped with transition metals. Our work demonstrates that germanane with single vacancy forms strong bonds with all studied impurity atoms. Magnetism is observed for Ti, V, Cr, Mn, Fe, and Ni doping. Doping of Ti and Mn atoms results in half-metallic properties, while doping of Cr results in dilute magnetic semiconducting state. We estimate a Curie temperature of about 735 K for Mn-substituted system in the mean-field approximation at impurity concentration 5.56%. Furthermore, when increasing the impurity concentration to 12.5%, Curie temperatures of Ti and Mn-substituted systems are 290 and 1120 K, respectively. Our studies demonstrate the potential of Ti and Mn-substituted germanane for room temperature spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Enhanced and selective ammonia sensing of reduced graphene oxide based chemo resistive sensor at room temperature

The reduced graphene oxide thin films were fabricated by using the spin coating method. The reduced graphene oxide samples were characterised by Raman studies to obtain corresponding D and G bands at 1360 and 1590 cm{sup −1} respectively. Fourier transform infra-red (FTIR) spectra consists of peak corresponds to sp{sup 2} hybridisation of carbon atoms at 1560 cm{sup −1}. The reduced graphene oxide based chemoresistive sensor exhibited a p-type semiconductor behaviour in ambient conditions and showed good sensitivity to different concentration of ammonia from 25 ppm to 500 ppm and excellent selectivity at room temperature. The sensor displays selectivity to several hazardous vapours such as methanol, ethanol, acetone and hydrazine hydrate. The sensor demonstrated a sensitivity of 9.8 at 25 ppm concentration of ammonia with response time of 163 seconds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Room temperature electrical properties of solution derived p-type Cu{sub 2}ZnSnS{sub 4} thin films

Electrical properties of solution processed Cu{sub 2}ZnSnS{sub 4} (CZTS) compound semiconductor thin film structures on molybdenum (Mo) coated glass substrates are investigated using Mott-Schottky and Impedance spectroscopy measurements at room temperature. These measurements are carried out in sodium sulfate (Na{sub 2}SO{sub 4}) electrolytic medium at pH ~ 9.5. The inversion/depletion/accumulation regions are clearly observed in CZTS semiconductor −Na{sub 2}SO{sub 4} electrolyte interface and measured flat band potential is ~ −0.27 V for CZTS thin film electrode. The positive slope of the depletion region confirms the intrinsic p-type characteristics of CZTS thinfilms with ~ 2.5× 10{sup 19} holes/m{sup 3}. The high frequency impedance measurements showed ~ 30 Ohm electrolyte resistance for the investigated configuration.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffraction peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Remarkable photocurrent in heterojunctions of n-La{sub 0.9}Hf{sub 0.1}MnO{sub 3}/i-SrTiO{sub 3}/p-Si at room temperature

Controllable manipulation for electrical transport in manganite-based heterojunctions have been desired and studied all the time due to their promising applications in electronic and spintronic devices. We report heterojunctions composed by n-type La{sub 0.9}Hf{sub 0.1}MnO{sub 3} and p-type Si with a SrTiO{sub 3} interlayer. The junctions reveal the formation of n-i-p junction in a wide temperature range of 20–300 K. Under illumination of 630 nm light, remarkable photocurrent has been observed. The photosensitivity (I{sub S}), defined as the ratio of photocurrent to dark current, reaches over 1200% under −3 V bias and illumination of red light with 10 mW cm{sup −2} at room temperature. Even light power density is as low as 0.2 mW cm{sup −2}, I{sub S} is still over 200% under −1.5 V bias. The injection of photo-carriers could be responsible for the observed phenomenon. Such manipulative features by light illumination and bias should be of great potential for functional light sensors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Room temperature ferromagnetism and luminescent behavior of Ni doped ZnO nanoparticles prepared by coprecipitation method

The samples of Zn{sub 1-x}Ni{sub x}O (x= 0.00 and 0.05) were prepared using coprecipitation method and annealed at different temperatures. The effect of Ni ion substitution on the structural and optical properties has been studied using X-ray Diffraction, UV-Visible, Photoluminescence and Magnetic measurements. XRD measurements demonstrate that all the prepared samples are wurtzite polycrystalline single phase in nature, ruling out the presence of any secondary phase formation. Ultraviolet visible measurements showed a decrease in band gap with the increase in annealing temperature and doping concentration. The PL data shows the red shift in all the samples and luminescence quenching with Ni doping. Compared to undoped ZnO, Ni doped ZnO showed room temperature ferromagnetism.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Room temperature neutron diffraction and magnetic studies of multiferroic Pb{sub 0.9}Bi{sub 0.1}Fe{sub 0.55}Nb{sub 0.45}O{sub 3} solid solution

The Pb{sub 0.9}Bi{sub 0.1}Fe{sub 0.55}Nb{sub 0.45}O{sub 3} (PBFNO) solid solution was synthesized by single step solid state reaction method and the optimized parameters are 700°C for 2hr (calcination) and 800°C for 3hr (sintering). The formation of desired material was confirmed using X-Ray Diffraction (XRD) and Neutron Diffraction (ND) studies. The structural and magnetic properties of the sintered pellets were investigated at room temperature (RT) through XRD, ND and Magnetic (M-H) studies. The structural analysis was carried out by Rietveld refinement through the Full Prof program. Rietveld refined XRD and ND patterns confirms the monoclinic structure with Cm space group and obtained cell parameters from the ND data are a = 5.651(2) Å, b = 5.658(2) Å, c = 4.005(1) Å and α = 90°, β = 89.98(1)°, γ = 90°. RT M-H curve studies have been carried out. It shows the clear opening of hysteresis (M–H) loop, is evidenced as the existence of weak ferromagnetism at RT. The M-H data shows existence weak ferromagnetism embedded in an antiferromagnetic matrix structure. The dielectric constant with frequency shows the formation of barrier layers at the grain and grain boundary interfaces gives rise to interfacial space charge polarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Room temperature optically detected magnetic resonance (photoluminescence detected magnetic resonance) of radical ion pairs induced by vacuum ultraviolet in thin polymeric films

A setup for recording optically detected electron paramagnetic resonance spectra of radical ions involved in geminate recombination and generated by vacuum ultraviolet is described. The setup allows registration of EPR spectra from short-lived radical ions in polymeric films at room temperature by recombination fluorescence modulated by a resonance microwave field.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Ge metal-oxide-semiconductor field effect transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗