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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots

The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved. Here, we fabricate 3 × 3 arrays of single/few-dopant quantum dots with finite disorder and demonstrate tuning of the electron ensemble using gates and probe the many-body states using quantum transport measurements. By controlling the lattice constants, we tune the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from metallic to Mott insulating behavior. We simulate thermally activated hopping and Hubbard band formation using increased temperatures. As atomically precise fabrication continues to improve, these results enable a new class of engineered artificial lattices to simulate interactive fermionic models.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Coherent versus incoherent sequential quantum measurements

We compare a trade-off between knowledge and decoherence for the incoherent and coherent partial sequential compatible measurements on single-qubit systems. The individual partial measurement nondestructively monitors basis states of the system by single-qubit meter. For the same decoherence caused by this unbiased measurement, the individual coherent measurement gives more knowledge than the incoherent one. For identical sequential coherent measurements, knowledge accumulated not additively increases more slowly than for the incoherent measurements. The overall knowledge can be accumulated using an adaptive measurement strategy on the meters if the single-qubit coherence of meters is kept. On the other hand, preservation of the mutual qubit coherence between the meters necessary for the collective measurement strategy is not required. A loss of single-qubit coherence degrades the coherent measurements back to the incoherent ones. Since the decoherence caused by the measurement process is a quadratic function of knowledge extracted by the individual measurement, Zeno-like behavior can be observed for repetitive weak compatible measurements. This unconditional universal effect does not depend on any dynamics of the qubit and it is a direct consequence of optimally controlled sequential evolution of quantum information.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/In{sub x}Al{sub y}Ga{sub z}As/GaAs quantum wells

The optical and structural properties of In{sub 0.15}Ga{sub 0.85}As/In{sub x}Al{sub y}Ga{sub z}As/GaAs quantum wells with embedded InAs quantum dots (QDs) were investigated by the photoluminescence (PL), its temperature dependence, X-ray diffraction (XRD), and high resolution (HR-XRD) methods in dependence on the composition of capping In{sub x}Al{sub y}Ga{sub z}As layers. Three types of capping layers (Al{sub 0.3}Ga{sub 0.7}As, Al{sub 0.10}Ga{sub 0.75}In{sub 0.15}As, and Al{sub 0.40}Ga{sub 0.45}In{sub 0.15}As) have been used and their impact on PL parameters has been compared. Temperature dependences of PL peak positions in QDs have been analyzed in the range of 10–500 K and to compare with the temperature shrinkage of band gap in the bulk InAs crystal. This permits to investigate the QD material composition and the efficiency of Ga(Al)/In inter diffusion in dependence on the type of In{sub x}Al{sub y}Ga{sub z}As capping layers. XRD and HR-XRD used to control the composition of quantum well layers. It is shown that QD material composition is closer to InAs in the structure with the Al{sub 0.40}Ga{sub 0.45}In{sub 0.15}As capping layer and for this structure the emission 1.3 μm is detected at 300 K. The thermal decay of the integrated PL intensity has been studied as well. It is revealed the fast 10{sup 2}-fold thermal decay of the integrated PL intensity in the structure with the Al{sub 0.10}Ga{sub 0.75}In{sub 0.15}As capping layer in comparison with 10-fold decay in other structures. Finally, the reasons of PL spectrum transformation and the mechanism of PL thermal decay for different capping layers have been analyzed and discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Investigation of modified uni-traveling carrier photodiode for cryogenic microwave photonic links

Quantum devices present the potential for unparalleled computing and communications capabilities; however, the cryogenic temperatures required to successfully control and read out many qubit platforms can prove to be very challenging to scale. Recently, there has emerged an interest in using microwave photonics to deliver control signals down to ultracold stages via optical fiber, thereby reducing thermal load and facilitating dense wavelength multiplexing. Photodetectors can then convert this optical energy to electrical signals for qubit control. The fidelity of the quantum operations of interest therefore depend heavily upon the characteristics of the photodiode, yet experimental demonstrations of fiber-coupled photodetection systems at low temperatures are relatively few in number, leaving important open questions regarding how specific detectors may perform in real-world cryogenic settings. In this work, we examine a highly linear modified uni-traveling carrier photodiode (MUTC-PD) under C-band illumination (1530–1565 nm) at three temperature regimes (300 K, 80 K, and ∼4 K) and multiple bias conditions. Our findings of reduced responsivity but preserved bandwidth are consistent with previous studies, while our saturation tests suggest a variety of potential applications for MUTC-PDs in cryogenic microwave photonics with and without electrical bias. Overall, our results should provide a valuable foundation for the continued and expanding use of this detector technology in quantum information processing.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

Silicon Quantum Dots with Counted Antimony Donor Implants

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Singh, Meenakshi↗
DOE OSTI2024

Creation of color centers in diamond by recoil implantation through dielectric films

The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Further, recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as “recoil implantation.” Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable properties after annealing.

42 ENGINEERING↗
DOE OSTI2022

Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator

Quantum anomalous Hall phases arising from the inverted band topology in magnetically doped topological insulators have emerged as an important subject of research for quantization at zero magnetic fields. Though necessary for practical implementation, sophisticated electrical control of molecular beam epitaxy (MBE)-grown quantum anomalous Hall matter have been stymied by growth and fabrication challenges. Here, in this study, a novel procedure is demonstrated, employing a combination of thin-film deposition and 2D material stacking techniques, to create dual-gated devices of the MBE-grown quantum anomalous Hall insulator, Cr-doped (Bi,Sb) 2 Te 3 . In these devices, orthogonal control over the field-induced charge density and the electric displacement field is demonstrated. A thorough examination of material responses to tuning along each control axis is presented, realizing magnetic property control along the former and a novel capability to manipulate the surface exchange gap along the latter. Through electrically addressing the exchange gap, the capabilities to either strengthen the quantum anomalous Hall state or suppress it entirely and drive a topological phase transition to a trivial state are demonstrated. The experimental result is explained using first principle theoretical calculations, and establishes a practical route for in situ control of quantum anomalous Hall states and topology.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Three-photon states in nonlinear crystal superlattices

It has been a longstanding goal in quantum optics to realize controllable sources generating joint multiphoton states, particularly photon triplet with arbitrary spectral characteristics. We demonstrate that such sources can be realized via cascaded parametric down-conversion (PDC) in superlattice structures of nonlinear and linear segments. We consider a scheme that involves two parametric processes--{omega}{sub 0{yields}{omega}1}+{omega}{sub 2}, {omega}{sub 2{yields}{omega}1}+{omega}{sub 1} under pulsed pump--and investigate the spontaneous creation of a photon triplet as well as the generation of high-intensity mode in intracavity three-photon splitting. We show the preparation of Greenberger-Horne-Zeilinger polarization-entangled states in cascaded type-II and type-I PDC in the framework of considering the dual-grid structure that involves two periodically poled crystals. We demonstrate the method of compensation of the dispersive effects in nonlinear segments by appropriately chosen linear dispersive segments of superlattice for preparation of the heralded joint states of two polarized photons. In the case of intracavity three-photon splitting, we concentrate on the investigation of photon-number distributions, third-order photon-number correlation function, as well as the Wigner functions. These quantities are observed both for short interaction time intervals and the over-transient regime, when dissipative effects are essential.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Novel spin-orbit coupling driven emergent states in iridate-based heterostructures

Recent years have seen many examples of how the strong spin-orbit coupling present in iridates can stabilize new emergent states that are difficult or impossible to realize in more conventional materials. In this review we outline a representative set of studies detailing how heterostructures based on Ruddlesden-Popper (RP) iridates can be used to access yet more novel physics. Beginning with a short synopsis of iridate thin film growth, the effects of the heterostructure morphology on the RP iridates including Sr 2 IrO 4 and SrIrO 3 are discussed. Example studies explore the effects of epitaxial strain, laser-excitation to access transient states, topological semimetallicity in SrIrO 3 , 2D magnetism in artificial RP iridates, and interfacial magnetic coupling between iridate and neighboring layers. Taken together, these works show the fantastic potential for controlled engineering of novel quantum phenomena in iridate heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Controllable synthesis, growth mechanism and optical properties of the ZnSe quantum dots and nanoparticles with different crystalline phases

Graphical abstract: The ZnSe quantum dots (3.5 nm) with the wurtzite structure exhibited a strong near band-edge emission (NBE) peak centered at 422 nm. The zinc blende ZnSe nanoparticles (21 nm) exhibited near-band-edge luminescence peak centered at 472 nm. Highlights: ► The results of TEM showed that the ZnSe quantum dots were about 3.5 nm. ► The ZnSe quantum dots exhibited a near band-edge emission peak centered at 422 nm. ► The ZnSe nanoparticles exhibited near-band-edge luminescence peak centered at 472 nm. - Abstract: ZnSe precursors were prepared by a solvothermal method at 180 °C without any surface-active agents. ZnSe quantum dots and nanoparticles were obtained by annealing the precursors at 300 °C for 2 h in argon atmosphere. The ZnSe quantum dots were about 3.5 nm, while the ZnSe nanoparticles were about 21 nm, as observed using TEM. The growth mechanisms for the two samples were discussed; this proved that the high coordination ability of ethylenediamine to zinc played an important role in the final phase of the products. The ZnSe quantum dots with the wurtzite structure exhibited a strong near band-edge emission (NBE) peak centered at 422 nm, which was blue-shifted in comparison to that of the bulk ZnSe, which was mainly caused by the quantum confinement effect. However, the zinc blende ZnSe nanoparticles exhibited a near-band-edge luminescence peak centered at 472 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Catalytic resonance theory for the kinetic signatures of multiple wavelength photocatalysis

Multi-step surface chemistry promoted with one or two wavelengths of light exhibited distinct kinetic signatures indicative of the light-adsorbate interactions and the number of photon-sensitive elementary steps. In this work, kinetic Monte Carlo simulations identified the kinetic response of general surface mechanisms to variation in the per-site photon flux of one or two wavelengths of incident light. Photocatalytic rates were described via a non-dimensional photon flux, identifying multiple kinetic regimes with unique degrees of rate control. Under photon-controlled kinetic conditions, maximum quantum yield and turnover frequency were obtained under constant illumination, while pulsing of one or more light sources was shown to exhibit slower rates and less efficient photocatalytic promotion due to the inherent dynamic nature of light, which comprises a stream of photons. Simulations provided distinct kinetic signatures in catalytic rates and Arrhenius kinetics for specific light-surface-adsorbate interactions corresponding to photocatalytic promotion of specific steps in surface chemistry.

catalytic resonance↗
DOE OSTI2021

Preparation of Ultrathin Gold Films with Subatomic Surface Roughness

Nanoscale device fabrication requires control over film growth at the atomic scale. Growth conditions must be tuned in consideration of interface parameters like chemical bonding, surface free energy, and lattice matching. In metals, electronic properties may also be utilized for control of physical parameters. Quantum size effects can induce metals to spontaneously form specific shapes and sizes according to their electronic structure. Unfortunately, such electronic growth is generally known only for a few systems and is typically only stable under cryogenic conditions. In this work, we explore a recently discovered class of electronic growth systems in which metal films are grown upon the relatively inert surfaces of van der Waals crystals. In this class of materials, the electronic growth is highly stable at room temperature and actually requires higher temperature annealing to achieve proper equilibrium. We work with the Au/MoS 2 system, which shows excellent stability and can readily form discrete and atomically flat nanostructures. Here, we show how the electronic growth modes facilitate the formation of atomically flat films with nanometer scale thickness. Here, the surface roughness of these films was found to be less than a single atom over several square microns, creating nearly perfect surfaces for studies of self-assembled monolayers or other applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Dimensional Control of Octahedral Tilt in SrRuO 3 via Infinite-Layered Oxides

Manipulation of octahedral distortion at atomic scale is an effective means to tune the ground states of functional oxides. Previous work demonstrates that strain and film thickness are variable parameters to modify the octahedral parameters. However, selective control of bonding geometry by structural propagation from adjacent layers is rarely studied. Here we propose a new route to tune the ferromagnetism in SrRuO 3 (SRO) ultrathin layers by oxygen coordination of adjacent SrCuO 2 (SCO) layers. The infinite-layered CuO 2 exhibits a structural transformation from “planar-type” to “chain-type” with reduced film thickness. Two orientations dramatically modify the polyhedral connectivity at the interface, thus altering the octahedral distortion of SRO. The local structural variation changes the spin state of Ru and orbital hybridization strength, leading to a significant change in the magnetoresistance and anomalous Hall resistivity. Furthermore, these findings could launch investigations into adaptive control of functionalities in quantum oxide heterostructures using oxygen coordination.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2013

Semiclassical Monte-Carlo approach for modelling non-adiabatic dynamics in extended molecules

Modelling of non-adiabatic dynamics in extended molecular systems and solids is a next frontier of atomistic electronic structure theory. The underlying numerical algorithms should operate only with a few quantities (that can be efficiently obtained from quantum chemistry), provide a controlled approximation (which can be systematically improved) and capture important phenomena such as branching (multiple products), detailed balance and evolution of electronic coherences. Here we propose a new algorithm based on Monte-Carlo sampling of classical trajectories, which satisfies the above requirements and provides a general framework for existing surface hopping methods for non-adiabatic dynamics simulations. In particular, our algorithm can be viewed as a post-processing technique for analysing numerical results obtained from the conventional surface hopping approaches. Presented numerical tests for several model problems demonstrate efficiency and accuracy of the new method.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Optical control of integer and fractional Chern insulators

Optical control of topology, particularly in the presence of electron correlations, is an interesting topic with broad scientific and technological impact. Twisted MoTe 2 bilayer (tMoTe 2 ) is a zero-field fractional Chern insulator (FCI), exhibiting the fractionally quantized anomalous Hall effect. As the chirality of the edge states and sign of the Chern number are determined by the underlying ferromagnetic polarization, manipulation of ferromagnetism would realize control of the Chern insulator (CI)/FCI states. Here, in this work, we demonstrate control of ferromagnetic polarization, and thus the CI and FCI states, by circularly polarized optical pumping in tMoTe 2 . At low excitation power, we achieve on-demand preparation of ferromagnetic polarization by optical training, that is, electrically tuning the system from non-ferromagnetic to desirable ferromagnetic states under helicity-selective optical pumping. With increased excitation power, we further realize direct optical switching of ferromagnetic polarization at a temperature far below the Curie temperature. Both optical training and direct switching are most effective near CI and FCI states, which we attribute to a gap-enhanced valley polarization of optically pumped holes. The magnetization can be dynamically switched by modulating the helicity of optical excitation. Spatially resolved measurements further demonstrate optical writing of ferromagnetic, and thus CI (or FCI) domains. Our work realizes precise optical control of a topological quantum many-body system with potential applications in topological spintronics, quantum memories and creation of exotic edge states by programmable patterning of integer and fractionally quantized anomalous Hall domains.

ferromagnetism↗
DOE OSTI2014

Magnetic field control of the intraband optical absorption in two-dimensional quantum rings

Linear and nonlinear optical absorption coefficients of the two-dimensional semiconductor ring in the perpendicular magnetic field B are calculated within independent electron approximation. Characteristic feature of the energy spectrum are crossings of the levels with adjacent nonpositive magnetic quantum numbers as the intensity B changes. It is shown that the absorption coefficient of the associated optical transition is drastically decreased at the fields corresponding to the crossing. Proposed model of the Volcano disc allows to get simple mathematical analytical results, which provide clear physical interpretation. An interplay between positive linear and intensity-dependent negative cubic absorption coefficients is discussed; in particular, critical light intensity at which additional resonances appear in the total absorption dependence on the light frequency is calculated as a function of the magnetic field and levels' broadening.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

An FPGA-based instrumentation platform for use at deep cryogenic temperatures

We describe the operation of a cryogenic instrumentation platform incorporating commercially available field-programmable gate arrays (FPGAs). The functionality of the FPGAs at temperatures approaching 4 K enables signal routing, multiplexing, and complex digital signal processing in close proximity to cooled devices or detectors within the cryostat. The performance of the FPGAs in a cryogenic environment is evaluated, including clock speed, error rates, and power consumption. Although constructed for the purpose of controlling and reading out quantum computing devices with low latency, the instrument is generic enough to be of broad use in a range of cryogenic applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗