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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Threshold for plasma phase transition of aluminum single crystal induced by hypervelocity impact

Molecular dynamics method is used to study the threshold for plasma phase transition of aluminum single crystal induced by hypervelocity impact. Two effective simulation methods, piston-driven method and multi-scale shock technique, are used to simulate the shock wave. The simulation results from the two methods agree well with the experimental data, indicating that the shock wave velocity is linearly dependent on the particle velocity. The atom is considered to be ionized if the increase of its internal energy is larger than the first ionization energy. The critical impact velocity for plasma phase transition is about 13.0 km/s, corresponding to the threshold of pressure and temperature which is about 220 GPa and 11.0 × 10{sup 3 }K on the shock Hugoniot, respectively.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effects of laser fluence on silicon modification by four-beam laser interference

This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm{sup 2}, 495 mJ/cm{sup 2}, and 637 mJ/cm{sup 2}, the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7–9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Dynamic actuation of single-crystal diamond nanobeams

We show the dielectrophoretic actuation of single-crystal diamond nanomechanical devices. Gradient radio-frequency electromagnetic forces are used to achieve actuation of both cantilever and doubly clamped beam structures, with operation frequencies ranging from a few MHz to ∼50 MHz. Frequency tuning and parametric actuation are also studied.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Deformation microstructure and positive temperature dependence of flow stress in Ni{sub 3}Ge

Single crystalline specimens of Ni{sub 3}Ge were compressed along [0 0 1] at different temperatures. Temperature dependence of the critical resolved shear stress (τ{sub 0}(T)) has been obtained. Detailed measurements at cryogen temperatures (4.2-77 K temperature interval) showed that the increase of the yield stress with temperature starts at liquid helium temperature. The values of the apparent activation volume (V*) have been obtained as a result of stress relaxation tests repeated along the stress-strain curve at different stress levels at seven temperatures (77, 293, 373, 473, 573, 673, 773 K). Transmission electron microscopy (TEM) methods were used to analyze the evolution of dislocation structure with temperature and strain. The measurements of the straight dislocations fraction determined as δ = ρ{sub sd} / ρ, (ρ{sub sd} is the straight dislocation density, ρ is a total dislocation density) have been performed. The experimental data obtained in different tests in Ni{sub 3}Ge confirm two-stage nature of the positive temperature dependence of the flow stress of alloys with the L1{sub 2} structure. The model of thermal strengthening considering two different types of mechanisms, first acting at low temperatures and second at high has been proposed. Using this model the temperature dependence of the critical resolved shear stress has been approximated and the activation parameters of thermal strengthening of Ni{sub 3}Ge have been obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Laws of evolution of slip trace pattern and its parameters with deformation in [1.8.12] – single crystals of Ni{sub 3}Fe alloy

The slip trace pattern of Ni{sub 3}Fe alloy single crystals with the short range order oriented for a single slip were investigated on replica at different stages of deformation using the transmission diffraction electron microscopy method. The connection of staging with the formation of slip trace pattern and the change of its parameters were established. The number of local areas where two or more slip systems work is increased with the change of stages. In these conditions the character of slip localization in the primary slip system is changed from the packets to the homogeneous distribution. The distributions of the distances between slip traces and the shear power in slip traces were plotted. The correlation between the average value of the shear power in the primary slip traces and the average distance between them was revealed in this work. It was established that the rates of the average value growth of the relative local shear and the shear power in the slip traces reach the largest values at the transition stage.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Atomically layer-by-layer diffusion of oxygen/hydrogen in highly epitaxial PrBaCo{sub 2}O{sub 5.5+δ} thin films

Single-crystalline epitaxial thin films of PrBaCo{sub 2}O{sub 5.5+δ} (PrBCO) were prepared, and their resistance R(t) under a switching flow of oxidizing and reducing gases were measured as a function of the gas flow time t in the temperature range of 200–800 °C. During the oxidation cycle under O{sub 2}, the PrBCO films exhibit fast oscillations in their dR(t)/dt vs. t plots, which reflect the oxidation processes, Co{sup 2+}/Co{sup 3+} → Co{sup 3+} and Co{sup 3+} → Co{sup 3+}/Co{sup 4+}, that the Co atoms of PrBCO undergo. Each oscillation consists of two peaks, with larger and smaller peaks representing the oxygen/hydrogen diffusion through the (BaO)(CoO{sub 2})(PrO)(CoO{sub 2}) layers of PrBCO via the oxygen-vacancy-exchange mechanism. This finding paves a significant avenue for cathode materials operating in low-temperature solid-oxide-fuel-cell devices and for chemical sensors with wide range of operating temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Excimer laser assisted re-oxidation of BaTiO{sub 3} thin films on Ni metal foils

Excimer laser assisted re-oxidation for reduced, crystallized BaTiO{sub 3} thin films on Ni-foils was investigated. It was found that the BaTiO{sub 3} can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO{sub x} interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV{sub rms} excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO{sub 3} thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO{sub x} formation between the BaTiO{sub 3} and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001]{sub C} and [111]{sub C} BaTiO{sub 3} single crystals indicate that the re-oxidation of BaTiO{sub 3} single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Low temperature magnetic properties and spin dynamics in single crystals of Cr{sub 8}Zn antiferromagnetic molecular rings

A detailed experimental investigation of the effects giving rise to the magnetic energy level structure in the vicinity of the level crossing (LC) at low temperature is reported for the open antiferromagnetic molecular ring Cr{sub 8}Zn. The study is conducted by means of thermodynamic techniques (torque magnetometry, magnetization and specific heat measurements) and microscopic techniques (nuclear magnetic resonance line width, nuclear spin lattice, and spin-spin relaxation measurements). The experimental results are shown to be in excellent agreement with theoretical calculations based on a minimal spin model Hamiltonian, which includes a Dzyaloshinskii-Moriya interaction. The first ground state level crossing at μ{sub 0}H{sub c1} = 2.15 T is found to be an almost true LC while the second LC at μ{sub 0}H{sub c2} = 6.95 T has an anti-crossing gap of Δ{sub 12} = 0.19 K. In addition, both NMR and specific heat measurements show the presence of a level anti-crossing between excited states at μ{sub 0}H = 4.5 T as predicted by the theory. In all cases, the fit of the experimental data is improved by introducing a distribution of the isotropic exchange couplings (J), i.e., using a J strain model. The peaks at the first and second LCs in the nuclear spin-lattice relaxation rate are dominated by inelastic scattering and a value of Γ ∼ 10{sup 10} rad/s is inferred for the life time broadening of the excited state of the open ring, due to spin phonon interaction. A loss of NMR signal (wipe-out effect) is observed for the first time at LC and is explained by the enhancement of the spin-spin relaxation rate due to the inelastic scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Ferroelastic twin structures in epitaxial WO{sub 3} thin films

Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO{sub 3} single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic 〈100〉 axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic 〈110〉 axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ∼0.6 and ∼0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Crystal structure determination of Efavirenz

Needle-shaped single crystals of the title compound, C{sub 14}H{sub 9}ClF{sub 3}NO{sub 2}, were obtained from a co-crystallization experiment of Efavirenz with maleic acid in a (1:1) ratio, using methanol as solvent. Crystal structure determination at room temperature revealed a significant anisotropy of the lattice expansion compared to the previously reported low-temperature structure. In both low- and room temperature structures the cyclopropylethynyl fragment in one of the asymmetric unit molecules is disordered. While at low-temperature only one C atom exhibits positional disorder, at room temperature the disorder is present for two C atoms of the cyclopropane ring.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO{sub 2} films

We propose a simple method based on the combination of Hall and Seebeck measurements to estimate the thickness of a carrier system within a semiconductor film. As an example, this method can distinguish “bulk” carriers, with homogeneous depth distribution, from “sheet” carriers, that are accumulated within a thin layer. The thickness of the carrier system is calculated as the ratio of the integral sheet carrier concentration, extracted from Hall measurements, to the volume carrier concentration, derived from the measured Seebeck coefficient of the same sample. For rutile SnO{sub 2}, the necessary relation of Seebeck coefficient to volume electron concentration in the range of 3 × 10{sup 17} to 3 × 10{sup 20 }cm{sup −3} has been experimentally obtained from a set of single crystalline thin films doped with varying Sb-doping concentrations and unintentionally doped bulk samples, and is given as a “calibration curve.” Using this calibration curve, our method demonstrates the presence of interface electrons in homogeneously deep-acceptor (In) doped SnO{sub 2} films on sapphire substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Compact turnkey focussing neutron guide system for inelastic scattering investigations

We demonstrate the performance of a compact neutron guide module which boosts the intensity in inelastic neutron scattering experiments by approximately a factor of 40. The module consists of two housings containing truly curved elliptic focussing guide elements, positioned before and after the sample. The advantage of the module lies in the ease with which it may be reproducibly mounted on a spectrometer within a few hours, on the same timescale as conventional sample environments. It is particularly well suited for samples with a volume of a few mm{sup 3}, thus enabling the investigation of materials which to date would have been considered prohibitively small or samples exposed to extreme environments, where there are space constraints. We benchmark the excellent performance of the module by measurements of the structural and magnetic excitations in single crystals of model systems. In particular, we report the phonon dispersion in the simple element lead. We also determine the magnon dispersion in the spinel ZnCr{sub 2}Se{sub 4} (V = 12.5 mm{sup 3}), where strong magnetic diffuse scattering at low temperatures evolves into distinct helical order.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

P-type conductivity in annealed strontium titanate

Hall-effect measurements indicate p-type conductivity in bulk, single-crystal strontium titanate (SrTiO{sub 3}, or STO) samples that were annealed at 1200°C. Room-temperature mobilities above 100 cm{sup 2}/V s were measured, an order of magnitude higher than those for electrons (5-10 cm{sup 2}/V s). Average hole densities were in the 10{sup 9}-10{sup 10} cm{sup −3} range, consistent with a deep acceptor.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate

Metal organic chemical vapor deposition of InGaAs/InP multi-quantum-well in nanoscale V-grooved trenches on Si (001) substrate was studied using the aspect ratio trapping method. A high quality GaAs/InP buffer layer with two convex (111) B facets was selectively grown to promote the highly uniform, single-crystal ridge InP/InGaAs multi-quantum-well structure growth. Material quality was confirmed by transmission electron microscopy and room temperature micro-photoluminescence measurements. This approach shows great promise for the fabrication of photonics devices and nanolasers on Si substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Nonlinear magnetoelectric effect and magnetostriction in piezoelectric CsCuCl{sub 3} in paramagnetic and antiferromagnetic states

The direct nonlinear magnetoelectric (ME) effect and the magnetostriction of piezoelectric CsCuCl{sub 3} single crystals were comprehensively studied over a wide temperature range in stationary magnetic fields of up to 14 T. The direct nonlinear ME effect measurements were also performed in pulsed magnetic fields up to 31 T, at liquid helium temperature in the antiferromagnetic (AF) state for the crystallographic direction in which effect has the maximum value. The nonlinear ME effect was quadratic in the paramagnetic state for the whole range of magnetic fields. In the AF state the phase transition between different configurations of spins manifested itself as plateau-like peculiarity on the nonlinear ME effect. The nonlinear ME effect was saturated by the phase transition to the spin-saturated paramagnetic state. Two contributions to the nonlinear ME effects in CsCuCl{sub 3} were extracted from the experimental data: the intrinsic ME effect originated from the magnetoelectric interactions, and the extrinsic one, which resulted from a magnetostriction-induced piezoelectric effect.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗