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At least 1,099 records · Page 61

Methodology for measurement of fault latency in a digital avionic miniprocessor

Using a gate level emulation of a typical avionics miniprocessor, fault injection experiments were performed to (1) determine the time to detect a fault by comparison monitoring, (2) forecast a program's ability to detect faults and (3) validate the fault detection coverage of a typical self test program. To estimate time to detect, six programs ranging in complexity from 6 to 147 instructions, were emulated. Each program was executed repetitively in the presence of a single stuck at fault at a gate node or device pin. Detection was assumed to occur whenever the computed outputs differed from the corresponding outputs of the same program executed in a nonfaulted processor. Histograms of faults detected versus number of repetitions to detection were tabulated. Using a simple model of fault detection, which was based in an analog with the selection of balls in an urn, distributions of time to detect were computed and compared with those obtained empirically. A self test program of 2,000 executable instructions was designed expressly for the study. The only requirement imposed on the design was that it should achieve 95% coverage. The program was executed in the presence of a single stuck-at fault at a gate node on device pin. The proportion of detected faults are tabulated. In all experiments faults were selected at random over gate nodes or device pins.

Mcgough, J. C.↗

Ka-band Ga-As FET noise receiver/device development

The development of technology for a 30 GHz low noise receiver utilizing GaAs FET devices exclusively is discussed. This program required single and dual-gate FET devices, low noise FET amplifiers, dual-gate FET mixers, and FET oscillators operating at Ka-band frequencies. A 0.25 micrometer gate FET device, developed with a minimum noise figure of 3.3 dB at 29 GHz and an associated gain of 7.4 dB, was used to fabricate a 3-stage amplifier with a minimum noise figure and associated gain of 4.4 dB and 17 dB, respectively. The 1-dB gain bandwidth of this amplifier extended from below 26.5 GHz to 30.5 GHz. A dual-gate mixer with a 2 dB conversion loss and a minimum noise figure of 10 dB at 29 GHz as well as a dielectric resonator stabilized FET oscillator at 25 GHz for the receiver L0. From these components, a hybrid microwave integrated circuit receiver was constructed which demonstrates a minimum single-side band noise figure of 4.6 dB at 29 GHz with a conversion gain of 17 dB. The output power at the 1-dB gain compression point was -5 dBm.

Schellenberg, J. M.↗

The 30-GHz monolithic receive module

Key requirements for a 30 GHz GaAs monolithic receive module for spaceborne communication antenna feed array applications include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five-bit phase shifter, and a maximum power consumption of 250 mW. The RF designs for each of the four submodules (low noise amplifier, some gain control, phase shifter, and RF to IF sub-module) are presented. Except for the phase shifter, high frequency, low noise FETs with sub-half micron gate lengths are employed in the submodules. For the gain control, a two stage dual gate FET amplifier is used. The phase shifter is of the passive switched line type and consists of 5-bits. It uses relatively large gate width FETs (with zero drain to source bias) as the switching elements. A 20 GHz local oscillator buffer amplifier, a FET compatible balanced mixer, and a 5-8 GHz IF amplifier constitute the RF/IF sub-module. Phase shifter fabrication using ion implantation and a self-aligned gate technique is described. Preliminary RF results obtained on such phase shifters are included.

Sokolov, V.↗

Brushless DC motor control system responsive to control signals generated by a computer or the like

A control system for a brushless DC motor responsive to digital control signals is disclosed. The motor includes a multiphase wound stator and a permanent magnet rotor. The motor is arranged so that each phase winding, when energized from a DC source, will drive the rotor through a predetermined angular position or step. A commutation signal generator responsive to the shaft position provides a commutation signal for each winding. A programmable control signal generator such as a computer or microprocessor produces individual digital control signals for each phase winding. The control signals and commutation signals associated with each winding are applied to an AND gate for that phase winding. Each gate controls a switch connected in series with the associated phase winding and the DC source so that each phase winding is energized only when the commutation signal and the control signal associated with that phase winding are present. The motor shaft may be advanced one step at a time to a desired position by applying a predetermined number of control signals in the proper sequence to the AND gates and the torque generated by the motor be regulated by applying a separate control signal and each AND gate which is pulse width modulated to control the total time that each switch connects its associated winding to the DC source during each commutation period.

Packard, D. T.↗

Flash technology for charge-coupled-device imaging in the ultraviolet

The introduction of the flash gate has made possible the fabrication of backside-illuminated CCDs with high sensitivity and stability throughout a wide range of ultraviolet and visible wavelengths (100 to 5000 A). It had been determined previously that the characteristics of the oxide layer beneath the gate are critical to the ultimate achievable CCD performance. However, by creating an improved oxide layer in conjunction with the flash gate, it is now possible to consistently produce CCDs with near-ideal UV performance. In this paper recent results and related background theory that optimize the flash gate specifically for application in the UV are presented.

Janesick, James R.↗

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Source record↗

Low power consumption current transducer

A low power consumption current transducer utilizes a saturable core reactor which includes a pair of opposed gate windings and a control winding. The control winding of the saturable reactor is arranged to receive the current to be measured. A square wave generator is connected to the gate winding of the transformer connected across the square wave generator and the secondary connected in series with the gate windings of the reactor. A full wave rectifier is connected to the gate windings and a resistor is connected across the rectifier to provide a DC voltage to cross it representative of the current flow through the control winding. A DC power supply is provided to supply power to the square wave voltage source. A diode is connected between each end of the primary winding of the transformer and one polarity of the DC power supply to commutate the reactive current resulting from the counter emf generated in the reactor back to the DC supply to eliminate potentially damaging reactive voltage spikes which would otherwise appear at the output of the square wave generator and conserve energy.

W T McLyman↗

Ion-implanted high microwave power indium phosphide transistors

Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.

Biedenbender, Michael D.↗

GaAs CCD readout for engineered bandgap detectors

GaAs and related heterostructure charge-coupled devices (CCDs) for detector array readout multiplexer applications are described. Features of resistive-gate CCDs are compared with capacitive-gate CCDs for this application. Design examples of GaAs CCD readouts for linear and two-dimensional detector arrays with different detection methods and signal coupling schemes are described. Recent progress in two-dimensional electron gas (2DEG) Al(0.3)Ga(0.7)As/GaAs resistive-gate CCDs is also presented. The 2DEG resistive-gate CCD conventional buried-channel GaAs CCD.

Song, J.-I.↗

Indium gallium arsenide microwave power transistors

Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.

Johnson, Gregory A.↗

Efficient design of CMOS TSC checkers

This paper considers the design of an efficient, robustly testable, CMOS Totally Self-Checking (TSC) Checker for k-out-of-2k codes. Most existing implementations use primitive gates and assume the single stuck-at fault model. The self-testing property has been found to fail for CMOS TSC checkers under the stuck-open fault model due to timing skews and arbitrary delays in the circuit. A new four level design using CMOS primitive gates (NAND, NOR, INVERTERS) is presented. This design retains its properties under the stuck-open fault model. Additionally, this method offers an impressive reduction (greater than 70 percent) in gate count, gate inputs, and test set size when compared to the existing method. This implementation is easily realizable and is based on Anderson's technique. A thorough comparative study has been made on the proposed implementation and Kundu's implementation and the results indicate that the proposed one is better than Kundu's in all respects for k-out-of-2k codes.

Biddappa, Anita↗

Space Station Freedom NiH2 cell testing program

Testing for the Space Station Freedom Nickel Hydrogen Cell Test Program began in 1990 at Crave Division, Naval Surface Warfare Center. The program has included receipt inspection, random vibration, acceptance, characterization, and life cycle testing of Ni-H2 cells in accordance with the NASA LeRC Interagency Order C-31001-J. A total of 400 Ni-H2 cells have been received at NAVSURFWARCENDIV Crane from three separate manufacturers; Yardney Technical Products (Yardney), Eagle Picher Industries (Eagle Picher), and Gates Energy Products (Gates). Of those, 308 cells distributed among 39 packs have undergone life cycle testing under a test regime simulating low earth orbit conditions. As of 30 September 1993, there are 252 cells assembled into 32 packs still on life cycle test. Since the beginning of the program, failed cells have been detected in all phases of testing. The failures include the following; seven 65 AmpHr and 81 AmpHr Yardney cells were found to be leaking KOH on receipt, one 65 AmpHr Eagle Picher cell failed the acceptance test, one 65 AmpHr Gates cell failed during the characterization test, and six 65 AmpHr Gates cells failed the random vibration test. Of the 39 life cycle packs, testing on seven packs, 56 cells, has been suspended because of low end of discharge voltages. All of the failed life cycle packs were cycled at 60% depth of discharge.

Moore, Bruce↗

Ku-band high efficiency GaAs MMIC power amplifiers

The development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.

Tserng, H. Q.↗

Locating Anomalies in Complex Data Sets Using Visualization and Simulation

The research goals are to create a simulation framework that can accept any combination of models written at the gate or behavioral level. The framework provides the ability to fault simulate and create scenarios of experiments using concurrent simulation. In order to meet these goals we have had to fulfill the following requirements. The ability to accept models written in VHDL, Verilog or the C languages. The ability to propagate faults through any model type. The ability to create experiment scenarios efficiently without generating every possible combination of variables. The ability to accept adversity of fault models beyond the single stuck-at model. Major development has been done to develop a parser that can accept models written in various languages. This work has generated considerable attention from other universities and industry for its flexibility and usefulness. The parser uses LEXX and YACC to parse Verilog and C. We have also utilized our industrial partnership with Alternative System's Inc. to import vhdl into our simulator. For multilevel simulation, we needed to modify the simulator architecture to accept models that contained multiple outputs. This enabled us to accept behavioral components. The next major accomplishment was the addition of "functional fault models". Functional fault models change the behavior of a gate or model. For example, a bridging fault can make an OR gate behave like an AND gate. This has applications beyond fault simulation. This modeling flexibility will make the simulator more useful for doing verification and model comparison. For instance, two or more versions of an ALU can be comparatively simulated in a single execution. The results will show where and how the models differed so that the performance and correctness of the models may be evaluated. A considerable amount of time has been dedicated to validating the simulator performance on larger models provided by industry and other universities.

Panetta, Karen↗

2D Quantum Transport Modeling in Nanoscale MOSFETs

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on an equal footing. Electron bandstructure is treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are consistent with 1D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller leakage current than the longer gate length device without a significant trade-off in on-current.

Svizhenko, Alexei↗

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗

Proton Transport

The transport of protons across membranes is an essential process for both bioenergetics of modern cells and the origins of cellular life. All living systems make use of proton gradients across cell walls to convert environmental energy into a high-energy chemical compound, adenosine triphosphate (ATP), synthesized from adenosine diphosphate. ATP, in turn, is used as a source of energy to drive many cellular reactions. The ubiquity of this process in biology suggests that even the earliest cellular systems were relying on proton gradient for harvesting environmental energy needed to support their survival and growth. In contemporary cells, proton transfer is assisted by large, complex proteins embedded in membranes. The issue addressed in this Study was: how the same process can be accomplished with the aid of similar but much simpler molecules that could have existed in the protobiological milieu? The model system used in the study contained a bilayer membrane made of phospholipid, dimyristoylphosphatidylcholine (DMPC) which is a good model of the biological membranes forming cellular boundaries. Both sides of the bilayer were surrounded by water which simulated the environment inside and outside the cell. Embedded in the membrane was a fragment of the Influenza-A M$_2$ protein and enough sodium counterions to maintain system neutrality. This protein has been shown to exhibit remarkably high rates of proton transport and, therefore, is an excellent model to study the formation of proton gradients across membranes. The Influenza M$_2$ protein is 97 amino acids in length, but a fragment 25 amino acids long. which contains a transmembrane domain of 19 amino acids flanked by three amino acids on each side. is sufficient to transport protons. Four identical protein fragments, each folded into a helix, aggregate to form small channels spanning the membrane. Protons are conducted through a narrow pore in the middle of the channel in response to applied voltage. This channel is large enough to contain water molecules. and is normally filled with water. In analogy to the mechanism of proton transfer in some other channels, it has been postulated that protons are translocated along the network of water molecules filling the pore of the channel. This mechanism, however, must involve an additional important step because the channel contains four histidine amino acid residues, one from each of the helices, which are sufficiently large to occlude the pore and interrupt the water network. The histidine residues ensure channel selectivity by blocking transport of small ions, such as sodium or potassium. They have been also implicated in gating protons due to the ability of each histidine to become positively charged by accepting an additional proton. Two mechanisms of gating have been proposed. In one mechanism, all four histidines acquire an additional proton and, due to repulsion between their positive charges, move away from one another, thus opening the channel. The alternative mechanism relies of the ability of protons to move between different atoms in a molecule (tautomerization). Thus, a proton is captured on one side of the gate while another proton is released from the opposite side, and the molecule returns to the initial state through tautomerization. The simulations were designed to test these two mechanisms. Large-scale, atomic-level molecular dynamics simulations of the channel with the histidine residues in different protonation states revealed that all intermediate states of the system involved in the tautomerization mechanism are structurally stable and the arrangement of water molecules in the channel is conducive to the proton transport. In contrast, in the four-protonated state, postulated to exist in the gate-opening mechanism, the electrostatic repulsion between the histidine residues appears to be so large that the channel loses its structural integrity and one helix moves away from the remaining three. Additional information is contained within the original extended abstract.

Pohorille, Andrew↗

Computer-aided design of a proton pump

The use of transmembrane proton gradients in energy transduction is an almost universal feature of life on earth. These proton gradients are established and maintained by specialized assemblies of proteins which actively pump protons across membranes. One broad class of proton pumps uses captured light energy to drive the proton pumping. Our goal is to elucidate the minimum structural requirements of a light-driven proton-pump. There are two basic components to a simple light-driven proton pump: a source of photo-generated protons and a "gate-keeper" which prevents these protons from reattaching themselves to their source. A wide variety of molecules in the membrane, even as simple as polycyclic aromatic hydrocarbons, are capable of releasing protons when illuminated. Our work is therefore focused on the design of the "gate-keeper." Our initial model involves a pair of proton acceptors, coupled to each other by a transient water bridge, and supported in the membrane by a small bundle of peptide helices. Upon illumination, the proton source transfers its proton to the:- first acceptor of the gate-keeper. While the reverse reaction is highly probable, all that is needed to ensure irreversibility is a nonvanishing probability that the proton will be transferred to the second acceptor across a transient water bridge. Back transfer of the proton to the first acceptor, and thence to the proton source, is impeded by the free energy required to move the proton uphill towards the. proton source and by the disruption of the transient water bridge. As a prototypical water-bridged proton transfer system, we are studying the transfer of a proton across a water bridge from a formic acid to a formate anion. With a pK(sub alpha), of 3.7. formic acid is a good model for the acidic amino acids glutamate and aspartate which are good candidates for gate-keeper proton acceptors. Simulations of proton transfer reactions in a membrane are complicated by the quantum mechanical nature of the process breaking and forming chemical bonds.

New, Michael H.↗